GB2129214B - Bipolar transistors - Google Patents

Bipolar transistors

Info

Publication number
GB2129214B
GB2129214B GB08326835A GB8326835A GB2129214B GB 2129214 B GB2129214 B GB 2129214B GB 08326835 A GB08326835 A GB 08326835A GB 8326835 A GB8326835 A GB 8326835A GB 2129214 B GB2129214 B GB 2129214B
Authority
GB
United Kingdom
Prior art keywords
bipolar transistors
bipolar
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08326835A
Other versions
GB2129214A (en
GB8326835D0 (en
Inventor
Leslie William Kennedy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB08326835A priority Critical patent/GB2129214B/en
Publication of GB8326835D0 publication Critical patent/GB8326835D0/en
Publication of GB2129214A publication Critical patent/GB2129214A/en
Application granted granted Critical
Publication of GB2129214B publication Critical patent/GB2129214B/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors
    • H01L29/732Vertical transistors
    • H01L29/7325Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
GB08326835A 1982-10-15 1983-10-07 Bipolar transistors Expired GB2129214B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08326835A GB2129214B (en) 1982-10-15 1983-10-07 Bipolar transistors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB8229584 1982-10-15
GB08326835A GB2129214B (en) 1982-10-15 1983-10-07 Bipolar transistors

Publications (3)

Publication Number Publication Date
GB8326835D0 GB8326835D0 (en) 1983-11-09
GB2129214A GB2129214A (en) 1984-05-10
GB2129214B true GB2129214B (en) 1986-04-03

Family

ID=26284151

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08326835A Expired GB2129214B (en) 1982-10-15 1983-10-07 Bipolar transistors

Country Status (1)

Country Link
GB (1) GB2129214B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0611053B2 (en) * 1984-12-20 1994-02-09 三菱電機株式会社 Method for manufacturing semiconductor device
US5328859A (en) * 1993-01-04 1994-07-12 Xerox Corporation Method of making high voltage PNP bipolar transistor in CMOS

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1153495A (en) * 1966-07-25 1969-05-29 Associated Semiconductor Mft Improvements in and relating to Semiconductor Devices
JPS5852339B2 (en) * 1979-03-20 1983-11-22 富士通株式会社 Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
GB2129214A (en) 1984-05-10
GB8326835D0 (en) 1983-11-09

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee