GB2129214B - Bipolar transistors - Google Patents
Bipolar transistorsInfo
- Publication number
- GB2129214B GB2129214B GB08326835A GB8326835A GB2129214B GB 2129214 B GB2129214 B GB 2129214B GB 08326835 A GB08326835 A GB 08326835A GB 8326835 A GB8326835 A GB 8326835A GB 2129214 B GB2129214 B GB 2129214B
- Authority
- GB
- United Kingdom
- Prior art keywords
- bipolar transistors
- bipolar
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7325—Vertical transistors having an emitter-base junction leaving at a main surface and a base-collector junction leaving at a peripheral surface of the body, e.g. mesa planar transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB08326835A GB2129214B (en) | 1982-10-15 | 1983-10-07 | Bipolar transistors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8229584 | 1982-10-15 | ||
GB08326835A GB2129214B (en) | 1982-10-15 | 1983-10-07 | Bipolar transistors |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8326835D0 GB8326835D0 (en) | 1983-11-09 |
GB2129214A GB2129214A (en) | 1984-05-10 |
GB2129214B true GB2129214B (en) | 1986-04-03 |
Family
ID=26284151
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08326835A Expired GB2129214B (en) | 1982-10-15 | 1983-10-07 | Bipolar transistors |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2129214B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0611053B2 (en) * | 1984-12-20 | 1994-02-09 | 三菱電機株式会社 | Method for manufacturing semiconductor device |
US5328859A (en) * | 1993-01-04 | 1994-07-12 | Xerox Corporation | Method of making high voltage PNP bipolar transistor in CMOS |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1153495A (en) * | 1966-07-25 | 1969-05-29 | Associated Semiconductor Mft | Improvements in and relating to Semiconductor Devices |
JPS5852339B2 (en) * | 1979-03-20 | 1983-11-22 | 富士通株式会社 | Manufacturing method of semiconductor device |
-
1983
- 1983-10-07 GB GB08326835A patent/GB2129214B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2129214A (en) | 1984-05-10 |
GB8326835D0 (en) | 1983-11-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |