GB2089565B - Transistors - Google Patents
TransistorsInfo
- Publication number
- GB2089565B GB2089565B GB8137161A GB8137161A GB2089565B GB 2089565 B GB2089565 B GB 2089565B GB 8137161 A GB8137161 A GB 8137161A GB 8137161 A GB8137161 A GB 8137161A GB 2089565 B GB2089565 B GB 2089565B
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8137161A GB2089565B (en) | 1980-12-12 | 1981-12-09 | Transistors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB8039987 | 1980-12-12 | ||
GB8137161A GB2089565B (en) | 1980-12-12 | 1981-12-09 | Transistors |
Publications (2)
Publication Number | Publication Date |
---|---|
GB2089565A GB2089565A (en) | 1982-06-23 |
GB2089565B true GB2089565B (en) | 1985-02-20 |
Family
ID=26277837
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8137161A Expired GB2089565B (en) | 1980-12-12 | 1981-12-09 | Transistors |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB2089565B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5141881A (en) * | 1989-04-20 | 1992-08-25 | Sanyo Electric Co., Ltd. | Method for manufacturing a semiconductor integrated circuit |
US7791170B2 (en) * | 2006-07-10 | 2010-09-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a deep junction for electrical crosstalk reduction of an image sensor |
-
1981
- 1981-12-09 GB GB8137161A patent/GB2089565B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB2089565A (en) | 1982-06-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19921209 |