HK1007860A1 - Variable inductance element - Google Patents

Variable inductance element Download PDF

Info

Publication number
HK1007860A1
HK1007860A1 HK98106853A HK98106853A HK1007860A1 HK 1007860 A1 HK1007860 A1 HK 1007860A1 HK 98106853 A HK98106853 A HK 98106853A HK 98106853 A HK98106853 A HK 98106853A HK 1007860 A1 HK1007860 A1 HK 1007860A1
Authority
HK
Hong Kong
Prior art keywords
switch
inductor conductor
variable inductance
inductance element
inductor
Prior art date
Application number
HK98106853A
Other languages
German (de)
English (en)
French (fr)
Chinese (zh)
Other versions
HK1007860B (en
Inventor
Ikeda Takeshi
Okamura Susumu
Okamoto Akira
Original Assignee
Niigata Seimitsu Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP31127693A external-priority patent/JP3318086B2/ja
Priority claimed from JP19721094A external-priority patent/JP3563113B2/ja
Application filed by Niigata Seimitsu Co., Ltd. filed Critical Niigata Seimitsu Co., Ltd.
Publication of HK1007860B publication Critical patent/HK1007860B/en
Publication of HK1007860A1 publication Critical patent/HK1007860A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/006—Details of transformers or inductances, in general with special arrangement or spacing of turns of the winding(s), e.g. to produce desired self-resonance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/06—Mounting, supporting or suspending transformers, reactors or choke coils not being of the signal type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type
    • H01F17/0006—Printed inductances
    • H01F2017/0086—Printed inductances on semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H01F2021/125—Printed variable inductor with taps, e.g. for VCO

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
HK98106853A 1993-11-17 1998-06-26 Variable inductance element HK1007860A1 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP31127693A JP3318086B2 (ja) 1993-11-17 1993-11-17 インダクタンス可変素子
JP311276/93 1993-11-17
JP19721094A JP3563113B2 (ja) 1994-07-29 1994-07-29 インダクタンス可変素子
JP197210/94 1994-07-29

Publications (2)

Publication Number Publication Date
HK1007860B HK1007860B (en) 1999-04-23
HK1007860A1 true HK1007860A1 (en) 1999-04-23

Family

ID=26510236

Family Applications (1)

Application Number Title Priority Date Filing Date
HK98106853A HK1007860A1 (en) 1993-11-17 1998-06-26 Variable inductance element

Country Status (6)

Country Link
US (1) US5629553A (cs)
EP (1) EP0654802B1 (cs)
KR (1) KR100316220B1 (cs)
DE (1) DE69408791T2 (cs)
HK (1) HK1007860A1 (cs)
TW (1) TW262595B (cs)

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US6714113B1 (en) 2000-11-14 2004-03-30 International Business Machines Corporation Inductor for integrated circuits
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DE10162263A1 (de) * 2001-12-18 2003-07-10 Infineon Technologies Ag Induktives Bauteil
US7586387B2 (en) * 2002-06-05 2009-09-08 Nxp B.V. Electronic device and method of matching the impedance thereof
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JP2006156913A (ja) * 2004-12-01 2006-06-15 Ricoh Co Ltd プリント配線基板
KR100579136B1 (ko) * 2004-12-16 2006-05-12 한국전자통신연구원 가변 인덕턴스를 갖는 트랜스포머
KR100697278B1 (ko) * 2005-01-27 2007-03-20 삼성전자주식회사 저항소자를 가지는 반도체 집적회로
US8350657B2 (en) * 2005-06-30 2013-01-08 Derochemont L Pierre Power management module and method of manufacture
US8715839B2 (en) 2005-06-30 2014-05-06 L. Pierre de Rochemont Electrical components and method of manufacture
FI20055402A0 (fi) * 2005-07-11 2005-07-11 Nokia Corp Induktorilaite monikaistaista radiotaajuista toimintaa varten
KR100646939B1 (ko) * 2005-08-29 2006-11-23 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조방법
JP4707056B2 (ja) * 2005-08-31 2011-06-22 富士通株式会社 集積型電子部品および集積型電子部品製造方法
KR100794796B1 (ko) * 2005-09-08 2008-01-15 삼성전자주식회사 가변 인덕터
KR100716848B1 (ko) * 2005-10-17 2007-05-09 주식회사 팬택앤큐리텔 가변 인덕턴스를 갖는 나선형 인덕터
EP1788626B1 (en) * 2005-11-17 2009-04-29 Seiko Epson Corporation Multilayer circuit with variable inductor, and method of manufacturing it
WO2007086278A1 (ja) * 2006-01-24 2007-08-02 Nec Corporation 集積回路装置
CN101188159B (zh) * 2006-11-24 2011-01-12 阎跃军 分段可调电感器
WO2009016937A1 (ja) * 2007-07-30 2009-02-05 Murata Manufacturing Co., Ltd. チップ型コイル部品
US8138876B2 (en) * 2008-01-29 2012-03-20 International Business Machines Corporation On-chip integrated voltage-controlled variable inductor, methods of making and tuning such variable inductors, and design structures integrating such variable inductors
KR100982037B1 (ko) * 2009-12-14 2010-09-13 주식회사 아나패스 신호 생성 장치
US20120025623A1 (en) * 2010-07-28 2012-02-02 Qualcomm Incorporated Multi-loop wireless power receive coil
DE102010039156A1 (de) * 2010-08-10 2012-02-16 Robert Bosch Gmbh Verfahren zum Herstellen einer elektrischen Schaltung und elektrische Schaltung
JP5767495B2 (ja) * 2011-03-29 2015-08-19 パナソニック株式会社 可変インダクタ及びこれを用いた半導体装置
DE102011076135A1 (de) * 2011-05-19 2012-11-22 Endress + Hauser Gmbh + Co. Kg Verfahren und Vorrichtung zur Kommunikation mittels eines Transformators
US8773231B2 (en) 2012-03-09 2014-07-08 Raytheon Company Multiphase power converters involving controllable inductors
US10269489B2 (en) * 2013-03-15 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Programmable inductor
US9263961B2 (en) 2013-07-23 2016-02-16 Raytheon Company Wide input DC/DC resonant converter to control reactive power
JP6421484B2 (ja) * 2014-07-28 2018-11-14 Tdk株式会社 コイル部品、コイル部品複合体およびトランス、ならびに電源装置
DE102014220978A1 (de) * 2014-10-16 2016-04-21 Robert Bosch Gmbh Spulenanordnung zur induktiven Energieübertragung, induktive Energieübertragungsvorrichtung und Verfahren zum Herstellen einer Spulenanordnung zur induktiven Energieübertragung
US9698214B1 (en) * 2016-03-31 2017-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Capacitor structure of integrated circuit chip and method of fabricating the same
WO2017199690A1 (ja) * 2016-05-20 2017-11-23 株式会社村田製作所 インピーダンス整合回路、高周波フロントエンド回路および通信装置
KR101912287B1 (ko) * 2017-03-31 2018-10-29 삼성전기 주식회사 튜너블 인덕터 회로
CN110051938B (zh) * 2018-01-19 2024-05-31 重庆融海超声医学工程研究中心有限公司 超声换能器的阻抗匹配器、系统和超声换能器治疗设备
US12062859B2 (en) * 2021-09-24 2024-08-13 Qualcomm Incorporated True time phase shifter for MM-wave radio

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Also Published As

Publication number Publication date
EP0654802B1 (en) 1998-03-04
DE69408791T2 (de) 1998-10-22
KR950015422A (ko) 1995-06-16
DE69408791D1 (de) 1998-04-09
US5629553A (en) 1997-05-13
KR100316220B1 (ko) 2002-04-24
TW262595B (cs) 1995-11-11
EP0654802A1 (en) 1995-05-24

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Legal Events

Date Code Title Description
PF Patent in force
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20061116