TW262595B - - Google Patents

Info

Publication number
TW262595B
TW262595B TW083110490A TW83110490A TW262595B TW 262595 B TW262595 B TW 262595B TW 083110490 A TW083110490 A TW 083110490A TW 83110490 A TW83110490 A TW 83110490A TW 262595 B TW262595 B TW 262595B
Authority
TW
Taiwan
Application number
TW083110490A
Original Assignee
Ikeda Takeshi
Okamura Susumu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP31127693A external-priority patent/JP3318086B2/ja
Priority claimed from JP19721094A external-priority patent/JP3563113B2/ja
Application filed by Ikeda Takeshi, Okamura Susumu filed Critical Ikeda Takeshi
Application granted granted Critical
Publication of TW262595B publication Critical patent/TW262595B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F5/00—Coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/0086—Printed inductances on semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H01F2021/125—Printed variable inductor with taps, e.g. for VCO
TW083110490A 1993-11-17 1994-11-14 TW262595B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31127693A JP3318086B2 (ja) 1993-11-17 1993-11-17 インダクタンス可変素子
JP19721094A JP3563113B2 (ja) 1994-07-29 1994-07-29 インダクタンス可変素子

Publications (1)

Publication Number Publication Date
TW262595B true TW262595B (zh) 1995-11-11

Family

ID=26510236

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083110490A TW262595B (zh) 1993-11-17 1994-11-14

Country Status (6)

Country Link
US (1) US5629553A (zh)
EP (1) EP0654802B1 (zh)
KR (1) KR100316220B1 (zh)
DE (1) DE69408791T2 (zh)
HK (1) HK1007860A1 (zh)
TW (1) TW262595B (zh)

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US5936299A (en) * 1997-03-13 1999-08-10 International Business Machines Corporation Substrate contact for integrated spiral inductors
US6127908A (en) * 1997-11-17 2000-10-03 Massachusetts Institute Of Technology Microelectro-mechanical system actuator device and reconfigurable circuits utilizing same
JP4080582B2 (ja) * 1997-12-22 2008-04-23 株式会社東芝 半導体集積回路装置
US6159817A (en) * 1998-05-07 2000-12-12 Electro-Films Incorporated Multi-tap thin film inductor
US6885275B1 (en) * 1998-11-12 2005-04-26 Broadcom Corporation Multi-track integrated spiral inductor
US6240622B1 (en) * 1999-07-09 2001-06-05 Micron Technology, Inc. Integrated circuit inductors
US6320480B1 (en) * 1999-10-26 2001-11-20 Trw Inc. Wideband low-loss variable delay line and phase shifter
DE19963290B4 (de) * 1999-12-27 2011-07-21 Tridonic Gmbh & Co Kg Planare Induktivität
GB0004885D0 (en) 2000-03-01 2000-04-19 Alstom Improvements in and relating to filers and filter components
DE10047214A1 (de) * 2000-09-23 2002-04-11 Philips Corp Intellectual Pty Schaltungsanordnung
US6714113B1 (en) 2000-11-14 2004-03-30 International Business Machines Corporation Inductor for integrated circuits
JP3634305B2 (ja) * 2001-12-14 2005-03-30 三菱電機株式会社 積層インダクタンス素子
DE10162263A1 (de) * 2001-12-18 2003-07-10 Infineon Technologies Ag Induktives Bauteil
JP4188316B2 (ja) * 2002-06-05 2008-11-26 エヌエックスピー ビー ヴィ 電子デバイスおよびそのインピーダンス整合方法
JP3754406B2 (ja) 2002-09-13 2006-03-15 富士通株式会社 可変インダクタおよびそのインダクタンス調整方法
US7264419B2 (en) * 2003-03-19 2007-09-04 Applied Process Technology, Inc. System and method for remediating contaminated soil and groundwater in situ
SE526360C2 (sv) * 2004-01-09 2005-08-30 Infineon Technologies Ag Monolitiskt integrerad krets
JP2006156913A (ja) * 2004-12-01 2006-06-15 Ricoh Co Ltd プリント配線基板
KR100579136B1 (ko) * 2004-12-16 2006-05-12 한국전자통신연구원 가변 인덕턴스를 갖는 트랜스포머
KR100697278B1 (ko) * 2005-01-27 2007-03-20 삼성전자주식회사 저항소자를 가지는 반도체 집적회로
CN102255143B (zh) 2005-06-30 2014-08-20 L.皮尔·德罗什蒙 电子元件及制造方法
US8350657B2 (en) * 2005-06-30 2013-01-08 Derochemont L Pierre Power management module and method of manufacture
FI20055402A0 (fi) * 2005-07-11 2005-07-11 Nokia Corp Induktorilaite monikaistaista radiotaajuista toimintaa varten
KR100646939B1 (ko) * 2005-08-29 2006-11-23 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조방법
JP4707056B2 (ja) * 2005-08-31 2011-06-22 富士通株式会社 集積型電子部品および集積型電子部品製造方法
KR100794796B1 (ko) * 2005-09-08 2008-01-15 삼성전자주식회사 가변 인덕터
KR100716848B1 (ko) * 2005-10-17 2007-05-09 주식회사 팬택앤큐리텔 가변 인덕턴스를 갖는 나선형 인덕터
EP1788626B1 (en) * 2005-11-17 2009-04-29 Seiko Epson Corporation Multilayer circuit with variable inductor, and method of manufacturing it
US8633577B2 (en) * 2006-01-24 2014-01-21 Renesas Electronics Corporation Integrated circuit device
CN101188159B (zh) * 2006-11-24 2011-01-12 阎跃军 分段可调电感器
JPWO2009016937A1 (ja) * 2007-07-30 2010-10-14 株式会社村田製作所 チップ型コイル部品
US8138876B2 (en) * 2008-01-29 2012-03-20 International Business Machines Corporation On-chip integrated voltage-controlled variable inductor, methods of making and tuning such variable inductors, and design structures integrating such variable inductors
KR100982037B1 (ko) * 2009-12-14 2010-09-13 주식회사 아나패스 신호 생성 장치
US20120025623A1 (en) * 2010-07-28 2012-02-02 Qualcomm Incorporated Multi-loop wireless power receive coil
DE102010039156A1 (de) * 2010-08-10 2012-02-16 Robert Bosch Gmbh Verfahren zum Herstellen einer elektrischen Schaltung und elektrische Schaltung
JP5767495B2 (ja) * 2011-03-29 2015-08-19 パナソニック株式会社 可変インダクタ及びこれを用いた半導体装置
DE102011076135A1 (de) * 2011-05-19 2012-11-22 Endress + Hauser Gmbh + Co. Kg Verfahren und Vorrichtung zur Kommunikation mittels eines Transformators
US8773231B2 (en) 2012-03-09 2014-07-08 Raytheon Company Multiphase power converters involving controllable inductors
US10269489B2 (en) 2013-03-15 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Programmable inductor
US9263961B2 (en) 2013-07-23 2016-02-16 Raytheon Company Wide input DC/DC resonant converter to control reactive power
JP6421484B2 (ja) * 2014-07-28 2018-11-14 Tdk株式会社 コイル部品、コイル部品複合体およびトランス、ならびに電源装置
DE102014220978A1 (de) * 2014-10-16 2016-04-21 Robert Bosch Gmbh Spulenanordnung zur induktiven Energieübertragung, induktive Energieübertragungsvorrichtung und Verfahren zum Herstellen einer Spulenanordnung zur induktiven Energieübertragung
US9698214B1 (en) * 2016-03-31 2017-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Capacitor structure of integrated circuit chip and method of fabricating the same
CN109196782A (zh) * 2016-05-20 2019-01-11 株式会社村田制作所 阻抗匹配电路、高频前端电路以及通信装置
KR101912287B1 (ko) * 2017-03-31 2018-10-29 삼성전기 주식회사 튜너블 인덕터 회로
US20230100894A1 (en) * 2021-09-24 2023-03-30 Qualcomm Incorporated True time phase shifter for mm-wave radio

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JPS60124859A (ja) * 1983-12-09 1985-07-03 Nec Corp 多層配線構造
JPS62244160A (ja) * 1986-04-17 1987-10-24 Mitsubishi Electric Corp 半導体装置
GB2211987B (en) * 1987-10-30 1992-01-02 Plessey Co Plc Circuit arrangement including an inductor and a mesfet
DE3941323C2 (de) * 1988-12-14 1994-04-21 Fraunhofer Ges Forschung Halbleiterelement mit einer integrierten Induktivität und Verfahren zu seiner Herstellung
US5070317A (en) * 1989-01-17 1991-12-03 Bhagat Jayant K Miniature inductor for integrated circuits and devices
US4931753A (en) * 1989-01-17 1990-06-05 Ford Aerospace Corporation Coplanar waveguide time delay shifter
US4926292A (en) * 1989-08-09 1990-05-15 Avantek, Inc. Broadband printed spiral
JPH0461256A (ja) * 1990-06-28 1992-02-27 Mitsubishi Electric Corp 半導体集積回路
US5281932A (en) * 1991-04-04 1994-01-25 Ael Defense Corp. Multilayer magnetically coupled suspended stripline for impedance matching
KR940007461B1 (ko) * 1991-05-16 1994-08-18 금성일렉트론 주식회사 코일이 집적된 반도체 장치
CA2062710C (en) * 1991-05-31 1996-05-14 Nobuo Shiga Transformer for monolithic microwave integrated circuit

Also Published As

Publication number Publication date
KR100316220B1 (ko) 2002-04-24
KR950015422A (ko) 1995-06-16
HK1007860A1 (en) 1999-04-23
DE69408791T2 (de) 1998-10-22
DE69408791D1 (de) 1998-04-09
EP0654802B1 (en) 1998-03-04
US5629553A (en) 1997-05-13
EP0654802A1 (en) 1995-05-24

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