DE69408791D1 - Variables induktives Element - Google Patents

Variables induktives Element

Info

Publication number
DE69408791D1
DE69408791D1 DE69408791T DE69408791T DE69408791D1 DE 69408791 D1 DE69408791 D1 DE 69408791D1 DE 69408791 T DE69408791 T DE 69408791T DE 69408791 T DE69408791 T DE 69408791T DE 69408791 D1 DE69408791 D1 DE 69408791D1
Authority
DE
Germany
Prior art keywords
inductive element
variable inductive
variable
inductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69408791T
Other languages
English (en)
Other versions
DE69408791T2 (de
Inventor
Takeshi Ikeda
Susumu Okamura
Akira Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NSC Co Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP31127693A external-priority patent/JP3318086B2/ja
Priority claimed from JP19721094A external-priority patent/JP3563113B2/ja
Application filed by Individual filed Critical Individual
Application granted granted Critical
Publication of DE69408791D1 publication Critical patent/DE69408791D1/de
Publication of DE69408791T2 publication Critical patent/DE69408791T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F5/00—Coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F2017/0086—Printed inductances on semiconductor substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F21/00—Variable inductances or transformers of the signal type
    • H01F21/12—Variable inductances or transformers of the signal type discontinuously variable, e.g. tapped
    • H01F2021/125—Printed variable inductor with taps, e.g. for VCO

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
DE69408791T 1993-11-17 1994-11-16 Variables induktives Element Expired - Fee Related DE69408791T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31127693A JP3318086B2 (ja) 1993-11-17 1993-11-17 インダクタンス可変素子
JP19721094A JP3563113B2 (ja) 1994-07-29 1994-07-29 インダクタンス可変素子

Publications (2)

Publication Number Publication Date
DE69408791D1 true DE69408791D1 (de) 1998-04-09
DE69408791T2 DE69408791T2 (de) 1998-10-22

Family

ID=26510236

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69408791T Expired - Fee Related DE69408791T2 (de) 1993-11-17 1994-11-16 Variables induktives Element

Country Status (6)

Country Link
US (1) US5629553A (de)
EP (1) EP0654802B1 (de)
KR (1) KR100316220B1 (de)
DE (1) DE69408791T2 (de)
HK (1) HK1007860A1 (de)
TW (1) TW262595B (de)

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US6377155B1 (en) 1995-10-10 2002-04-23 Georgia Tech Research Corp. Microfabricated electromagnetic system and method for forming electromagnets in microfabricated devices
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US5936299A (en) * 1997-03-13 1999-08-10 International Business Machines Corporation Substrate contact for integrated spiral inductors
US6127908A (en) * 1997-11-17 2000-10-03 Massachusetts Institute Of Technology Microelectro-mechanical system actuator device and reconfigurable circuits utilizing same
JP4080582B2 (ja) * 1997-12-22 2008-04-23 株式会社東芝 半導体集積回路装置
US6159817A (en) * 1998-05-07 2000-12-12 Electro-Films Incorporated Multi-tap thin film inductor
US6885275B1 (en) 1998-11-12 2005-04-26 Broadcom Corporation Multi-track integrated spiral inductor
US6240622B1 (en) * 1999-07-09 2001-06-05 Micron Technology, Inc. Integrated circuit inductors
US6320480B1 (en) * 1999-10-26 2001-11-20 Trw Inc. Wideband low-loss variable delay line and phase shifter
DE19963290B4 (de) * 1999-12-27 2011-07-21 Tridonic Gmbh & Co Kg Planare Induktivität
GB0004885D0 (en) 2000-03-01 2000-04-19 Alstom Improvements in and relating to filers and filter components
DE10047214A1 (de) * 2000-09-23 2002-04-11 Philips Corp Intellectual Pty Schaltungsanordnung
US6714113B1 (en) 2000-11-14 2004-03-30 International Business Machines Corporation Inductor for integrated circuits
JP3634305B2 (ja) * 2001-12-14 2005-03-30 三菱電機株式会社 積層インダクタンス素子
DE10162263A1 (de) * 2001-12-18 2003-07-10 Infineon Technologies Ag Induktives Bauteil
EP1514285B1 (de) * 2002-06-05 2011-08-10 Nxp B.V. Elektronische vorrichtung und impedanzanpassungsverfahren dafür
JP3754406B2 (ja) 2002-09-13 2006-03-15 富士通株式会社 可変インダクタおよびそのインダクタンス調整方法
US7264419B2 (en) * 2003-03-19 2007-09-04 Applied Process Technology, Inc. System and method for remediating contaminated soil and groundwater in situ
SE526360C2 (sv) 2004-01-09 2005-08-30 Infineon Technologies Ag Monolitiskt integrerad krets
JP2006156913A (ja) * 2004-12-01 2006-06-15 Ricoh Co Ltd プリント配線基板
KR100579136B1 (ko) * 2004-12-16 2006-05-12 한국전자통신연구원 가변 인덕턴스를 갖는 트랜스포머
KR100697278B1 (ko) * 2005-01-27 2007-03-20 삼성전자주식회사 저항소자를 가지는 반도체 집적회로
US8350657B2 (en) * 2005-06-30 2013-01-08 Derochemont L Pierre Power management module and method of manufacture
CN102255143B (zh) 2005-06-30 2014-08-20 L.皮尔·德罗什蒙 电子元件及制造方法
FI20055402A0 (fi) * 2005-07-11 2005-07-11 Nokia Corp Induktorilaite monikaistaista radiotaajuista toimintaa varten
KR100646939B1 (ko) * 2005-08-29 2006-11-23 삼성에스디아이 주식회사 박막트랜지스터 및 그 제조방법
JP4707056B2 (ja) * 2005-08-31 2011-06-22 富士通株式会社 集積型電子部品および集積型電子部品製造方法
KR100794796B1 (ko) * 2005-09-08 2008-01-15 삼성전자주식회사 가변 인덕터
KR100716848B1 (ko) * 2005-10-17 2007-05-09 주식회사 팬택앤큐리텔 가변 인덕턴스를 갖는 나선형 인덕터
EP1788626B1 (de) * 2005-11-17 2009-04-29 Seiko Epson Corporation Mehrlagenschaltung mit variablem Induktor sowie Verfahren zu ihrer Herstellung
US8633577B2 (en) * 2006-01-24 2014-01-21 Renesas Electronics Corporation Integrated circuit device
CN101188159B (zh) * 2006-11-24 2011-01-12 阎跃军 分段可调电感器
CN101765893B (zh) 2007-07-30 2012-10-10 株式会社村田制作所 片状线圈元器件
US8138876B2 (en) * 2008-01-29 2012-03-20 International Business Machines Corporation On-chip integrated voltage-controlled variable inductor, methods of making and tuning such variable inductors, and design structures integrating such variable inductors
KR100982037B1 (ko) * 2009-12-14 2010-09-13 주식회사 아나패스 신호 생성 장치
US20120025623A1 (en) * 2010-07-28 2012-02-02 Qualcomm Incorporated Multi-loop wireless power receive coil
DE102010039156A1 (de) * 2010-08-10 2012-02-16 Robert Bosch Gmbh Verfahren zum Herstellen einer elektrischen Schaltung und elektrische Schaltung
JP5767495B2 (ja) * 2011-03-29 2015-08-19 パナソニック株式会社 可変インダクタ及びこれを用いた半導体装置
DE102011076135A1 (de) * 2011-05-19 2012-11-22 Endress + Hauser Gmbh + Co. Kg Verfahren und Vorrichtung zur Kommunikation mittels eines Transformators
US8773231B2 (en) 2012-03-09 2014-07-08 Raytheon Company Multiphase power converters involving controllable inductors
US10269489B2 (en) 2013-03-15 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Programmable inductor
US9263961B2 (en) 2013-07-23 2016-02-16 Raytheon Company Wide input DC/DC resonant converter to control reactive power
JP6421484B2 (ja) * 2014-07-28 2018-11-14 Tdk株式会社 コイル部品、コイル部品複合体およびトランス、ならびに電源装置
DE102014220978A1 (de) * 2014-10-16 2016-04-21 Robert Bosch Gmbh Spulenanordnung zur induktiven Energieübertragung, induktive Energieübertragungsvorrichtung und Verfahren zum Herstellen einer Spulenanordnung zur induktiven Energieübertragung
US9698214B1 (en) * 2016-03-31 2017-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Capacitor structure of integrated circuit chip and method of fabricating the same
CN109196782A (zh) * 2016-05-20 2019-01-11 株式会社村田制作所 阻抗匹配电路、高频前端电路以及通信装置
KR101912287B1 (ko) * 2017-03-31 2018-10-29 삼성전기 주식회사 튜너블 인덕터 회로
CN110051938B (zh) * 2018-01-19 2024-05-31 重庆融海超声医学工程研究中心有限公司 超声换能器的阻抗匹配器、系统和超声换能器治疗设备
US12062859B2 (en) 2021-09-24 2024-08-13 Qualcomm Incorporated True time phase shifter for MM-wave radio

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JPS5690551A (en) * 1979-12-24 1981-07-22 Mitsubishi Electric Corp Inductor device for integrated circuit
JPS60124859A (ja) * 1983-12-09 1985-07-03 Nec Corp 多層配線構造
JPS62244160A (ja) * 1986-04-17 1987-10-24 Mitsubishi Electric Corp 半導体装置
GB2211987B (en) * 1987-10-30 1992-01-02 Plessey Co Plc Circuit arrangement including an inductor and a mesfet
DE3941323C2 (de) * 1988-12-14 1994-04-21 Fraunhofer Ges Forschung Halbleiterelement mit einer integrierten Induktivität und Verfahren zu seiner Herstellung
US5070317A (en) * 1989-01-17 1991-12-03 Bhagat Jayant K Miniature inductor for integrated circuits and devices
US4931753A (en) * 1989-01-17 1990-06-05 Ford Aerospace Corporation Coplanar waveguide time delay shifter
US4926292A (en) * 1989-08-09 1990-05-15 Avantek, Inc. Broadband printed spiral
JPH0461256A (ja) * 1990-06-28 1992-02-27 Mitsubishi Electric Corp 半導体集積回路
US5281932A (en) * 1991-04-04 1994-01-25 Ael Defense Corp. Multilayer magnetically coupled suspended stripline for impedance matching
KR940007461B1 (ko) * 1991-05-16 1994-08-18 금성일렉트론 주식회사 코일이 집적된 반도체 장치
CA2062710C (en) * 1991-05-31 1996-05-14 Nobuo Shiga Transformer for monolithic microwave integrated circuit

Also Published As

Publication number Publication date
KR950015422A (ko) 1995-06-16
HK1007860A1 (en) 1999-04-23
EP0654802B1 (de) 1998-03-04
DE69408791T2 (de) 1998-10-22
US5629553A (en) 1997-05-13
TW262595B (de) 1995-11-11
EP0654802A1 (de) 1995-05-24
KR100316220B1 (ko) 2002-04-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: NIIGATA SEIMITSU CO., LTD., JOUETSU, NIIGATA, JP

8327 Change in the person/name/address of the patent owner

Owner name: NIIGATA SEIMITSU CO., LTD., JOETSU, NIIGATA, JP

8339 Ceased/non-payment of the annual fee