GB1423183A - Complemenatry field effect transistors - Google Patents

Complemenatry field effect transistors

Info

Publication number
GB1423183A
GB1423183A GB4285673A GB4285673A GB1423183A GB 1423183 A GB1423183 A GB 1423183A GB 4285673 A GB4285673 A GB 4285673A GB 4285673 A GB4285673 A GB 4285673A GB 1423183 A GB1423183 A GB 1423183A
Authority
GB
United Kingdom
Prior art keywords
type
oxide
layer
silicon
effect transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4285673A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1423183A publication Critical patent/GB1423183A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Weting (AREA)
  • Formation Of Insulating Films (AREA)
GB4285673A 1972-11-01 1973-09-12 Complemenatry field effect transistors Expired GB1423183A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00302962A US3821781A (en) 1972-11-01 1972-11-01 Complementary field effect transistors having p doped silicon gates

Publications (1)

Publication Number Publication Date
GB1423183A true GB1423183A (en) 1976-01-28

Family

ID=23169988

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4285673A Expired GB1423183A (en) 1972-11-01 1973-09-12 Complemenatry field effect transistors

Country Status (14)

Country Link
US (1) US3821781A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (2) JPS5513431B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BE (1) BE805485A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
BR (1) BR7307671D0 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1061012A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH553482A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2352762C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES419843A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2204896B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1423183A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IL (1) IL43098A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1001557B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL182604C (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE389227B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2128401A (en) * 1982-09-24 1984-04-26 Hitachi Ltd Method of manufacturing semiconductor device

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US4016016A (en) * 1975-05-22 1977-04-05 Rca Corporation Method of simultaneously forming a polycrystalline silicon gate and a single crystal extension of said gate in silicon on sapphire MOS devices
JPS51147274A (en) * 1975-06-13 1976-12-17 Fujitsu Ltd Manufacturing process of integrated circuit
JPS51147982A (en) * 1975-06-13 1976-12-18 Nec Corp Integrated circuit
JPS5214381A (en) * 1975-07-25 1977-02-03 Hitachi Ltd Mis-type semiconductor device
JPS5267276A (en) * 1975-10-29 1977-06-03 Toshiba Corp Manufacture of semiconductor unit
US4035826A (en) * 1976-02-23 1977-07-12 Rca Corporation Reduction of parasitic bipolar effects in integrated circuits employing insulated gate field effect transistors via the use of low resistance substrate contacts extending through source region
JPS606105B2 (ja) * 1976-03-29 1985-02-15 三菱電機株式会社 絶縁ゲ−ト型電界効果トランジスタの製造方法
US4124807A (en) * 1976-09-14 1978-11-07 Solid State Scientific Inc. Bistable semiconductor flip-flop having a high resistance feedback
US4045259A (en) * 1976-10-26 1977-08-30 Harris Corporation Process for fabricating diffused complementary field effect transistors
US4157268A (en) * 1977-06-16 1979-06-05 International Business Machines Corporation Localized oxidation enhancement for an integrated injection logic circuit
JPS5413779A (en) * 1977-07-04 1979-02-01 Toshiba Corp Semiconductor integrated circuit device
JPS54110068U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1978-01-20 1979-08-02
US4559694A (en) * 1978-09-13 1985-12-24 Hitachi, Ltd. Method of manufacturing a reference voltage generator device
US4785341A (en) * 1979-06-29 1988-11-15 International Business Machines Corporation Interconnection of opposite conductivity type semiconductor regions
EP0024905B1 (en) * 1979-08-25 1985-01-16 Zaidan Hojin Handotai Kenkyu Shinkokai Insulated-gate field-effect transistor
US4295897B1 (en) * 1979-10-03 1997-09-09 Texas Instruments Inc Method of making cmos integrated circuit device
JPS5661139A (en) * 1979-10-25 1981-05-26 Seiko Epson Corp Manufacture of semiconductor device
JPS5663874A (en) * 1979-10-29 1981-05-30 Hitachi Metals Ltd Hard tool material
JPS5664465A (en) * 1979-10-29 1981-06-01 Seiko Epson Corp C-mos integrated circuit
US4684971A (en) * 1981-03-13 1987-08-04 American Telephone And Telegraph Company, At&T Bell Laboratories Ion implanted CMOS devices
DE3133468A1 (de) * 1981-08-25 1983-03-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen in siliziumgate-technologie
DE3133841A1 (de) * 1981-08-27 1983-03-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen
US4435896A (en) 1981-12-07 1984-03-13 Bell Telephone Laboratories, Incorporated Method for fabricating complementary field effect transistor devices
DE3149185A1 (de) * 1981-12-11 1983-06-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung benachbarter mit dotierstoffionen implantierter wannen bei der herstellung von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen
US4474624A (en) * 1982-07-12 1984-10-02 Intel Corporation Process for forming self-aligned complementary source/drain regions for MOS transistors
JPH0636425B2 (ja) * 1983-02-23 1994-05-11 テキサス インスツルメンツ インコ−ポレイテツド Ｃｍｏｓ装置の製造方法
JPS6024620U (ja) * 1983-07-27 1985-02-20 トヨタ自動車株式会社 自動車用ドアウエザストリップ
JPS5956758A (ja) * 1983-08-31 1984-04-02 Hitachi Ltd 電界効果半導体装置の製法
US5257095A (en) * 1985-12-04 1993-10-26 Advanced Micro Devices, Inc. Common geometry high voltage tolerant long channel and high speed short channel field effect transistors
EP0248266A3 (de) * 1986-06-06 1990-04-25 Siemens Aktiengesellschaft Logikschaltung mit einer Mehrzahl von zueinander komplementären Feldeffekttransistoren
EP0248267A3 (de) * 1986-06-06 1990-04-25 Siemens Aktiengesellschaft Monolithisch integrierte Schaltung mit zueinander parallelen Schaltungszweigen
US4707455A (en) * 1986-11-26 1987-11-17 General Electric Company Method of fabricating a twin tub CMOS device
US5060037A (en) * 1987-04-03 1991-10-22 Texas Instruments Incorporated Output buffer with enhanced electrostatic discharge protection
JPS63146A (ja) * 1987-06-12 1988-01-05 Seiko Epson Corp 半導体装置
JPS63147A (ja) * 1987-06-12 1988-01-05 Seiko Epson Corp 半導体装置
JPH01164062A (ja) * 1988-11-18 1989-06-28 Hitachi Ltd 半導体装置の製造方法
US5289027A (en) * 1988-12-09 1994-02-22 Hughes Aircraft Company Ultrathin submicron MOSFET with intrinsic channel
JPH02224269A (ja) * 1989-12-29 1990-09-06 Seiko Epson Corp 半導体装置
JP2572653B2 (ja) * 1989-12-29 1997-01-16 セイコーエプソン株式会社 半導体装置の製造方法
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7098479B1 (en) * 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7576360B2 (en) * 1990-12-25 2009-08-18 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device which comprises thin film transistors and method for manufacturing the same
JPH0575042A (ja) * 1992-03-05 1993-03-26 Seiko Epson Corp 半導体装置
KR0131741B1 (ko) * 1993-12-31 1998-04-15 김주용 반도체 기억장치 및 그 제조방법
WO1997032343A1 (en) * 1996-02-28 1997-09-04 Sierra Semiconductor Coporation High-precision, linear mos capacitor
US6172402B1 (en) * 1998-06-04 2001-01-09 Advanced Micro Devices Integrated circuit having transistors that include insulative punchthrough regions and method of formation

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US3646665A (en) * 1970-05-22 1972-03-07 Gen Electric Complementary mis-fet devices and method of fabrication
DE2058660B1 (de) * 1970-11-28 1972-06-08 Itt Ind Gmbh Deutsche Verfahren zum Herstellen einer monolithischen Festkoerperschaltung

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2128401A (en) * 1982-09-24 1984-04-26 Hitachi Ltd Method of manufacturing semiconductor device
US4549340A (en) * 1982-09-24 1985-10-29 Hitachi, Ltd. Method of making CMOS semiconductor device using specially positioned, retained masks, and product formed thereby

Also Published As

Publication number Publication date
CH553482A (de) 1974-08-30
SE389227B (sv) 1976-10-25
NL7314732A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-05-03
JPS5513431B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-04-09
DE2352762C2 (de) 1984-02-16
DE2352762A1 (de) 1974-05-16
IL43098A0 (en) 1973-11-28
ES419843A1 (es) 1976-04-01
NL182604B (nl) 1987-11-02
IT1001557B (it) 1976-04-30
US3821781A (en) 1974-06-28
JPS5533096A (en) 1980-03-08
CA1061012A (en) 1979-08-21
FR2204896B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1978-08-11
JPS5548460B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1980-12-05
IL43098A (en) 1976-04-30
BE805485A (fr) 1974-01-16
JPS4979189A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-07-31
FR2204896A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-05-24
NL182604C (nl) 1988-04-05
BR7307671D0 (pt) 1974-10-22

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years

Effective date: 19930911