FR2794580B1 - Onduleur - Google Patents

Onduleur

Info

Publication number
FR2794580B1
FR2794580B1 FR9916233A FR9916233A FR2794580B1 FR 2794580 B1 FR2794580 B1 FR 2794580B1 FR 9916233 A FR9916233 A FR 9916233A FR 9916233 A FR9916233 A FR 9916233A FR 2794580 B1 FR2794580 B1 FR 2794580B1
Authority
FR
France
Prior art keywords
smoothing
drive circuit
switching elements
mounting
capacitors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9916233A
Other languages
English (en)
Other versions
FR2794580A1 (fr
Inventor
Toshinori Yamane
Hirotoshi Maekawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2794580A1 publication Critical patent/FR2794580A1/fr
Application granted granted Critical
Publication of FR2794580B1 publication Critical patent/FR2794580B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/162—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits the devices being mounted on two or more different substrates
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Inverter Devices (AREA)
  • Combinations Of Printed Boards (AREA)
  • Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
FR9916233A 1999-06-04 1999-12-22 Onduleur Expired - Fee Related FR2794580B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15878499A JP3501685B2 (ja) 1999-06-04 1999-06-04 電力変換装置

Publications (2)

Publication Number Publication Date
FR2794580A1 FR2794580A1 (fr) 2000-12-08
FR2794580B1 true FR2794580B1 (fr) 2003-11-28

Family

ID=15679270

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9916233A Expired - Fee Related FR2794580B1 (fr) 1999-06-04 1999-12-22 Onduleur

Country Status (4)

Country Link
US (1) US6181590B1 (fr)
JP (1) JP3501685B2 (fr)
DE (1) DE19959171A1 (fr)
FR (1) FR2794580B1 (fr)

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* Cited by examiner, † Cited by third party
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JP2000307056A (ja) * 1999-04-22 2000-11-02 Mitsubishi Electric Corp 車載用半導体装置
JP2001041499A (ja) * 1999-08-02 2001-02-13 Toshiba Kyaria Kk インバータ制御装置およびその製造方法
JP3692906B2 (ja) * 2000-05-25 2005-09-07 日産自動車株式会社 電力配線構造及び半導体装置
JP4004715B2 (ja) * 2000-05-31 2007-11-07 三菱電機株式会社 パワーモジュール
JP4398593B2 (ja) * 2001-01-29 2010-01-13 本田技研工業株式会社 インバータ装置
JP3526291B2 (ja) * 2001-04-25 2004-05-10 三菱電機株式会社 コンデンサモジュールおよびそれを用いた半導体装置
JP3913108B2 (ja) * 2002-05-22 2007-05-09 松下電器産業株式会社 半導体集積回路装置の製造方法
WO2004105220A2 (fr) * 2003-05-16 2004-12-02 Ballard Power Systems Corporation Systeme de module de puissance
US7046535B2 (en) * 2003-12-17 2006-05-16 Ballard Power Systems Corporation Architecture for power modules such as power inverters
US7292451B2 (en) * 2003-12-17 2007-11-06 Siemens Vdo Automotive Corporation Architecture for power modules such as power inverters
US7289343B2 (en) * 2003-12-17 2007-10-30 Siemens Vdo Automotive Corporation Architecture for power modules such as power inverters
US7301755B2 (en) * 2003-12-17 2007-11-27 Siemens Vdo Automotive Corporation Architecture for power modules such as power inverters
JP4583122B2 (ja) * 2004-09-28 2010-11-17 三菱電機株式会社 半導体装置及びその製造方法
JP4661645B2 (ja) * 2005-03-23 2011-03-30 トヨタ自動車株式会社 パワー半導体モジュール
DE112007000366T5 (de) * 2006-02-17 2009-01-02 Kabushiki Kaisha Yaskawa Denki, Kitakyushu Leistungsumwandlungsvorrichtung mit Sammelschiene
WO2009051853A1 (fr) 2007-10-15 2009-04-23 And, Llc Systèmes pour énergie solaire hautement efficace
JP4452952B2 (ja) * 2007-06-20 2010-04-21 日立オートモティブシステムズ株式会社 電力変換装置
JP4452953B2 (ja) * 2007-08-09 2010-04-21 日立オートモティブシステムズ株式会社 電力変換装置
US7919953B2 (en) * 2007-10-23 2011-04-05 Ampt, Llc Solar power capacitor alternative switch circuitry system for enhanced capacitor life
JP5099433B2 (ja) * 2008-02-21 2012-12-19 アイシン・エィ・ダブリュ株式会社 駆動装置制御ユニット
JP4597202B2 (ja) * 2008-03-07 2010-12-15 株式会社日立製作所 電力変換装置
JP5080321B2 (ja) * 2008-03-11 2012-11-21 日本インター株式会社 パワーモジュール
JP2009229133A (ja) * 2008-03-19 2009-10-08 Sanyo Electric Co Ltd 集積回路、半導体装置、電気機器
WO2010042124A1 (fr) * 2008-10-10 2010-04-15 Ampt, Llc Nouveaux circuits à énergie solaire et procédés d'alimentation électrique
WO2010120315A1 (fr) 2009-04-17 2010-10-21 Ampt, Llc Procédés et appareil pour le fonctionnement adaptatif de systèmes à énergie solaire
US9466737B2 (en) 2009-10-19 2016-10-11 Ampt, Llc Solar panel string converter topology
WO2011057609A2 (fr) 2009-11-12 2011-05-19 Conti Temic Microelectronic Gmbh Circuit de commande pour un dispositif d'entraînement électrique et dispositif d'entraînement électrique muni d'un tel circuit de commande
WO2011113403A2 (fr) * 2010-03-19 2011-09-22 Conti Temic Microelectronic Gmbh Circuit de convertisseur de moteur pour un moteur d'entraînement électrique et dispositif d'entraînement électrique équipé d'un circuit de convertisseur de moteur de ce type
JP5177711B2 (ja) 2010-05-21 2013-04-10 株式会社デンソー 電動装置
JP5201171B2 (ja) 2010-05-21 2013-06-05 株式会社デンソー 半導体モジュール、および、それを用いた駆動装置
JP5067679B2 (ja) 2010-05-21 2012-11-07 株式会社デンソー 半導体モジュール、および、それを用いた駆動装置
US8482904B2 (en) * 2010-05-25 2013-07-09 Lear Corporation Power module with current sensing
EP2403323B1 (fr) * 2010-06-21 2013-05-01 Danaher Motion Stockholm AB Entraînement de moteur de type inverseur
US8878483B2 (en) 2011-01-14 2014-11-04 Lear Corporation Electronics unit with current sensing
JP5862163B2 (ja) * 2011-09-28 2016-02-16 日産自動車株式会社 電力変換装置
CN104081646A (zh) * 2012-01-31 2014-10-01 株式会社安川电机 电力变换装置和用于制造电力变换装置的方法
EP2824815B1 (fr) * 2012-03-05 2020-09-16 Fuji Electric Co., Ltd. Dispositif de conversion de puissance
JP2014093792A (ja) * 2012-10-31 2014-05-19 Sumitomo Wiring Syst Ltd 車載用電子制御ユニット
US9397497B2 (en) 2013-03-15 2016-07-19 Ampt, Llc High efficiency interleaved solar power supply system
JP5853998B2 (ja) 2013-06-12 2016-02-09 株式会社デンソー 電力変換装置
JP6504832B2 (ja) 2014-01-28 2019-04-24 ゼネラル・エレクトリック・カンパニイ 統合された取り付けおよび冷却の装置、電子装置、および車両
US10073512B2 (en) 2014-11-19 2018-09-11 General Electric Company System and method for full range control of dual active bridge
DE102015209058A1 (de) * 2015-05-18 2016-11-24 Zf Friedrichshafen Ag Mehrfunktionale Hochstromleiterplatte
JP6488996B2 (ja) * 2015-11-27 2019-03-27 株式会社デンソー 電力変換装置
JP6753364B2 (ja) * 2017-06-21 2020-09-09 三菱電機株式会社 半導体装置
JP6523394B2 (ja) * 2017-09-21 2019-05-29 本田技研工業株式会社 電動車両のハーネス配策構造
AT521100A1 (de) * 2018-04-13 2019-10-15 Ceracap Engel Kg Wechselrichter mit Zwischenkreis
DE112018007612T5 (de) * 2018-05-14 2021-02-04 Mitsubishi Electric Corporation Leistungsumwandlungsvorrichtung
JP6935851B2 (ja) * 2018-08-20 2021-09-15 株式会社村田製作所 電力変換回路モジュール
JP7151361B2 (ja) * 2018-10-15 2022-10-12 富士電機株式会社 半導体装置
JP7303087B2 (ja) * 2019-10-15 2023-07-04 ファナック株式会社 平滑コンデンサ部及びスナバコンデンサを有するモータ駆動装置
JP6979997B2 (ja) * 2019-12-04 2021-12-15 三菱電機株式会社 電力用半導体装置
JP7367227B2 (ja) * 2020-08-18 2023-10-23 東芝キヤリア株式会社 モータ駆動装置
JP6999777B1 (ja) 2020-11-05 2022-01-19 三菱電機株式会社 電力変換装置
EP4027494B1 (fr) 2021-01-08 2023-11-08 Taiga Motors Inc. Unité d'entraînement pour véhicule électrique
DE102022202828A1 (de) 2022-03-23 2023-09-28 Magna powertrain gmbh & co kg Stromrichter mit einer Kühlvorrichtung und Verfahren zum Kühlen eines Stromrichters

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JPH0669312B2 (ja) * 1985-09-20 1994-08-31 株式会社日立製作所 インバ−タ装置
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JP2725952B2 (ja) * 1992-06-30 1998-03-11 三菱電機株式会社 半導体パワーモジュール
JP2903950B2 (ja) * 1993-06-22 1999-06-14 株式会社日立製作所 電力変換装置
US5617308A (en) * 1994-11-10 1997-04-01 Otis Elevator Company Noise-immune, clamped, resonant link inverter
DE19546421C1 (de) * 1995-12-12 1996-10-24 Siemens Ag Batterieankoppelvorrichtung
WO1998004029A1 (fr) * 1996-07-22 1998-01-29 Hydro-Quebec Module de conversion de puissance a faible inductance d'interconnexion parasite, destine a convertir une tension cc en une tension ca, et procede associe
JPH10304680A (ja) 1997-04-25 1998-11-13 Toyota Motor Corp 電力変換装置

Also Published As

Publication number Publication date
US6181590B1 (en) 2001-01-30
DE19959171A1 (de) 2000-12-07
JP3501685B2 (ja) 2004-03-02
JP2000350474A (ja) 2000-12-15
FR2794580A1 (fr) 2000-12-08

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Legal Events

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Year of fee payment: 17

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Effective date: 20190905