JP6753364B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6753364B2 JP6753364B2 JP2017121516A JP2017121516A JP6753364B2 JP 6753364 B2 JP6753364 B2 JP 6753364B2 JP 2017121516 A JP2017121516 A JP 2017121516A JP 2017121516 A JP2017121516 A JP 2017121516A JP 6753364 B2 JP6753364 B2 JP 6753364B2
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- 239000004065 semiconductor Substances 0.000 title claims description 96
- 239000000758 substrate Substances 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 7
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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Description
図1は、実施の形態1に係る半導体装置100の断面図である。半導体装置100は、放熱金属板10を備える。放熱金属板10の上には絶縁基板12が設けられる。放熱金属板10と絶縁基板12は、放熱金属板10と絶縁基板12とが一体化されたベース板であっても良い。このベース板は、例えば樹脂絶縁層と銅板とを備える。また、絶縁基板12は、例えばアルミナまたは窒化アルミのようなセラミック材で形成されても良い。
図5は実施の形態2に係るバネ端子230の斜視図である。本実施の形態ではバネ端子230の構造が実施の形態1と異なる。第2接続部232は、くびれ構造を有する。くびれ構造には、第2接続部232の長手方向に沿った両側の側面にそれぞれ設けられた複数の切り欠き236が設けられる。第2接続部232には6つの切り欠き236が設けられる。
図7は実施の形態3に係るバネ端子330の斜視図である。本実施の形態では複数の切り欠き336の各々の構造が実施の形態2と異なる。第2接続部332は、くびれ構造を有する。くびれ構造には、第2接続部332の長手方向に沿った両側の側面にそれぞれ設けられた複数の切り欠き336が設けられる。第2接続部332には6つの切り欠き336が設けられる。
図9は実施の形態4に係るバネ端子430の斜視図である。本実施の形態ではバネ端子430の構造が実施の形態1と異なる。第2接続部432は、くびれ構造を有する。くびれ構造には、第2接続部432の長手方向に沿った両側の側面にそれぞれ設けられた複数の切り欠き436が設けられる。第2接続部432には2つの切り欠き436が設けられる。
図11は、実施の形態5に係る半導体装置500の断面図である。半導体装置500はケース520を備える。また、半導体装置500はバネ端子530を備える。バネ端子530は第1接続部531を備える。バネ端子530の第1接続部531は、ケース520の側面522に沿って、ケース520の上面523に向かって伸びる。
図15は、実施の形態6に係る半導体装置600の断面図である。本実施の形態ではバネ端子630の構造が実施の形態5と異なる。バネ端子630は第1接続部631を備える。第1接続部631は水平部631aを備える。水平部631aは、平板状であり、y軸方向に伸びる。水平部631aは、台座部521の上面に設けられる。水平部631aは側面522に沿って設けられる。
また、垂直部631bは、側面522に沿って、台座部521からケース520の上面523に向かって伸びる。
Claims (13)
- 半導体素子と、
前記半導体素子を取り囲むケースと、
前記ケースの側面に沿って前記ケースの上面まで伸びる第1接続部と、前記ケースの上面に設けられた第2接続部と、を有するバネ端子と、
前記第2接続部の上に設けられた制御基板と、
を備え、
前記第1接続部は、前記ケースに固定され、前記半導体素子と接続され、
前記第2接続部は、前記第1接続部の前記ケースの上面側の端部と接続された第1端部と、前記第1端部と反対側の第2端部と、を有し、平板状であり、前記第1端部を支点として弾性力を有し、
前記第2端部は前記制御基板と弾性力を持って接触し、
前記第2接続部は、長手方向に沿った側面に切り欠きが設けられたくびれ構造を有することを特徴とする半導体装置。 - 前記第2端部と前記制御基板とは接合されていないことを特徴とする請求項1に記載の半導体装置。
- 前記第2端部には、前記ケースの上面と反対側に突出し、先端が丸まった凸部が設けられ、
前記凸部と前記制御基板とが接触することを特徴とする請求項1または2に記載の半導体装置。 - 前記くびれ構造には、前記第2接続部の前記長手方向に沿った両側の側面にそれぞれ設けられた複数の切り欠きが設けられることを特徴とする請求項1〜3の何れか1項に記載の半導体装置。
- 前記複数の切り欠きのうち前記両側の側面の一方に設けられた切り欠きと、前記複数の切り欠きのうち前記両側の側面の他方に設けられた切り欠きとは、前記長手方向の位置がずれていることを特徴とする請求項4に記載の半導体装置。
- 前記複数の切り欠きの各々は曲面を有することを特徴とする請求項4または5に記載の半導体装置。
- 前記複数の切り欠きの各々は、前記第1端部と前記第2端部との間に渡って設けられた曲面を有することを特徴とする請求項4に記載の半導体装置。
- 半導体素子と、
前記半導体素子を取り囲むケースと、
前記ケースの側面に沿って前記ケースの上面に向かって伸びる第1接続部と、前記ケースの上面に設けられた第2接続部と、前記第1接続部と前記第2接続部との間に設けられた弾性部と、を有するバネ端子と、
前記第2接続部の上に設けられた制御基板と、
を備え、
前記第1接続部は、前記ケースに固定され、前記半導体素子と接続され、
前記第2接続部は、前記弾性部と接続された第1端部と、前記第1端部と反対側の第2端部と、を有し、平板状であり、
前記第2端部は前記弾性部の弾性力により前記制御基板と接触し、
前記第2接続部は、前記ケースの上面に対して垂直な方向から見た幅が、前記ケースの上面に対して垂直な方向の幅よりも小さいことを特徴とする半導体装置。 - 前記第2端部と前記制御基板とは接合されていないことを特徴とする請求項8に記載の半導体装置。
- 前記弾性部の前記ケースの上面に対して垂直な方向の幅は、前記第2接続部の前記ケースの上面に対して垂直な方向の幅よりも小さいことを特徴とする請求項8または9に記載の半導体装置。
- 前記弾性部は、前記第2接続部と反対側に突出するようにU字型に湾曲していることを特徴とする請求項8または9に記載の半導体装置。
- 前記第2端部には、前記ケースの上面と反対側に突出した凸部が設けられ、
前記凸部と前記制御基板とが接触することを特徴とする請求項8〜11の何れか1項に記載の半導体装置。 - 前記制御基板の上に設けられたフタをさらに備え、
前記フタが、前記制御基板と前記第2接続部とを、上方から前記ケースの上面に向かって押さえつけることで、前記第2端部は前記制御基板と弾性力を持って接触することを特徴とする請求項1〜12の何れか1項に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2017121516A JP6753364B2 (ja) | 2017-06-21 | 2017-06-21 | 半導体装置 |
US15/857,931 US10468372B2 (en) | 2017-06-21 | 2017-12-29 | Semiconductor apparatus |
DE102018204473.2A DE102018204473B4 (de) | 2017-06-21 | 2018-03-23 | Halbleitervorrichtung |
CN201810642931.XA CN109103146B (zh) | 2017-06-21 | 2018-06-21 | 半导体装置 |
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JP2017121516A JP6753364B2 (ja) | 2017-06-21 | 2017-06-21 | 半導体装置 |
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JP2019009183A JP2019009183A (ja) | 2019-01-17 |
JP2019009183A5 JP2019009183A5 (ja) | 2019-06-27 |
JP6753364B2 true JP6753364B2 (ja) | 2020-09-09 |
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JP7014012B2 (ja) * | 2018-03-30 | 2022-02-01 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法および電力変換装置 |
JP7244339B2 (ja) | 2019-04-19 | 2023-03-22 | 株式会社三社電機製作所 | 半導体モジュール用外部端子 |
DE102020104723A1 (de) | 2020-02-24 | 2021-08-26 | Semikron Elektronik Gmbh & Co. Kg | Leistungselektronisches Submodul zur Montage auf einer Kühleinrichtung |
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JPH0612795B2 (ja) * | 1989-11-07 | 1994-02-16 | 株式会社日立製作所 | マルチチップモジュールの冷却構造 |
DE4418426B4 (de) * | 1993-09-08 | 2007-08-02 | Mitsubishi Denki K.K. | Halbleiterleistungsmodul und Verfahren zur Herstellung des Halbleiterleistungsmoduls |
JPH0982854A (ja) | 1995-09-20 | 1997-03-28 | Sumitomo Metal Ind Ltd | 電子部品用パッケージ |
JP2000183276A (ja) * | 1998-12-15 | 2000-06-30 | Mitsubishi Electric Corp | 半導体パワーモジュール |
JP2000307056A (ja) | 1999-04-22 | 2000-11-02 | Mitsubishi Electric Corp | 車載用半導体装置 |
JP3501685B2 (ja) * | 1999-06-04 | 2004-03-02 | 三菱電機株式会社 | 電力変換装置 |
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CN109103146A (zh) | 2018-12-28 |
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