FR2694133B1 - Cellule solaire a film mince et procede de production d'une telle cellule, ainsi qu'un procede d'attaque, un dispositif d'attaque automatique et un procede pour produire un dispositif semi-conducteur. - Google Patents

Cellule solaire a film mince et procede de production d'une telle cellule, ainsi qu'un procede d'attaque, un dispositif d'attaque automatique et un procede pour produire un dispositif semi-conducteur.

Info

Publication number
FR2694133B1
FR2694133B1 FR9308966A FR9308966A FR2694133B1 FR 2694133 B1 FR2694133 B1 FR 2694133B1 FR 9308966 A FR9308966 A FR 9308966A FR 9308966 A FR9308966 A FR 9308966A FR 2694133 B1 FR2694133 B1 FR 2694133B1
Authority
FR
France
Prior art keywords
producing
cell
thin film
well
film solar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9308966A
Other languages
English (en)
Other versions
FR2694133A1 (fr
Inventor
Yoshinori Matsuno
Hideo Aomoto
Satoshi Arimoto
Hiroaki Morikawa
Hajime Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2694133A1 publication Critical patent/FR2694133A1/fr
Application granted granted Critical
Publication of FR2694133B1 publication Critical patent/FR2694133B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
FR9308966A 1992-07-22 1993-07-21 Cellule solaire a film mince et procede de production d'une telle cellule, ainsi qu'un procede d'attaque, un dispositif d'attaque automatique et un procede pour produire un dispositif semi-conducteur. Expired - Fee Related FR2694133B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP21723792 1992-07-22
JP5032351A JPH0690014A (ja) 1992-07-22 1993-02-23 薄型太陽電池及びその製造方法，エッチング方法及び自動エッチング装置，並びに半導体装置の製造方法

Publications (2)

Publication Number Publication Date
FR2694133A1 FR2694133A1 (fr) 1994-01-28
FR2694133B1 true FR2694133B1 (fr) 1997-10-03

Family

ID=26370904

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9308966A Expired - Fee Related FR2694133B1 (fr) 1992-07-22 1993-07-21 Cellule solaire a film mince et procede de production d'une telle cellule, ainsi qu'un procede d'attaque, un dispositif d'attaque automatique et un procede pour produire un dispositif semi-conducteur.

Country Status (4)

Country Link
US (3) US5397400A (fr)
JP (1) JPH0690014A (fr)
DE (1) DE4324647C2 (fr)
FR (1) FR2694133B1 (fr)

Families Citing this family (123)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3417008B2 (ja) * 1993-11-04 2003-06-16 株式会社デンソー 半導体ウエハのエッチング方法
DE69435205D1 (de) * 1993-12-14 2009-05-28 Spectrolab Inc Dünne Halbleitervorrichtung und Herstellungsverfahren
JP3169497B2 (ja) * 1993-12-24 2001-05-28 三菱電機株式会社 太陽電池の製造方法
ATE313857T1 (de) * 1995-05-19 2006-01-15 Heidenhain Gmbh Dr Johannes Strahlungsempfindliches detektorelement
JP3202649B2 (ja) * 1997-04-17 2001-08-27 日本電気株式会社 反射防止膜形成用材料およびこれを用いた半導体装置の製造方法
US5956571A (en) * 1997-05-02 1999-09-21 Yang; Mei-Hua Solar battery with thin film type of single crystal silicon
EP0933822A3 (fr) * 1998-01-20 1999-12-15 Sharp Kabushiki Kaisha Substrat pour former un composant semi-conducteur à couches minces et à résistance mécanique élevée et méthode pour produire un composant semi-conducteur à couches minces et à résistance mécanique élevée
JP3672436B2 (ja) 1998-05-19 2005-07-20 シャープ株式会社 太陽電池セルの製造方法
WO2000007249A1 (fr) * 1998-07-27 2000-02-10 Citizen Watch Co., Ltd. Cellule solaire, procede de production et masque de photolithographie permettant de fabriquer ladite cellule solaire
US6802364B1 (en) 1999-02-19 2004-10-12 Iowa State University Research Foundation, Inc. Method and means for miniaturization of binary-fluid heat and mass exchangers
US7066241B2 (en) * 1999-02-19 2006-06-27 Iowa State Research Foundation Method and means for miniaturization of binary-fluid heat and mass exchangers
US6162702A (en) * 1999-06-17 2000-12-19 Intersil Corporation Self-supported ultra thin silicon wafer process
US6294725B1 (en) 2000-03-31 2001-09-25 Trw Inc. Wireless solar cell array electrical interconnection scheme
DE10016972A1 (de) * 2000-04-06 2001-10-25 Angew Solarenergie Ase Gmbh Solarzelle
FR2809534B1 (fr) * 2000-05-26 2005-01-14 Commissariat Energie Atomique Dispositif semiconducteur a injection electronique verticale et son procede de fabrication
US6657237B2 (en) 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
US6829442B2 (en) * 2000-12-19 2004-12-07 Lite Cycles, Inc. High speed optical receiver
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
DE10150040A1 (de) * 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
DE10313127B4 (de) * 2003-03-24 2006-10-12 Rena Sondermaschinen Gmbh Verfahren zur Behandlung von Substratoberflächen
JP4121928B2 (ja) * 2003-10-08 2008-07-23 シャープ株式会社 太陽電池の製造方法
US8399331B2 (en) 2007-10-06 2013-03-19 Solexel Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
US9508886B2 (en) 2007-10-06 2016-11-29 Solexel, Inc. Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam
US8420435B2 (en) * 2009-05-05 2013-04-16 Solexel, Inc. Ion implantation fabrication process for thin-film crystalline silicon solar cells
US7235736B1 (en) * 2006-03-18 2007-06-26 Solyndra, Inc. Monolithic integration of cylindrical solar cells
US20080302418A1 (en) * 2006-03-18 2008-12-11 Benyamin Buller Elongated Photovoltaic Devices in Casings
US20100326429A1 (en) * 2006-05-19 2010-12-30 Cumpston Brian H Hermetically sealed cylindrical solar cells
US20080047599A1 (en) * 2006-03-18 2008-02-28 Benyamin Buller Monolithic integration of nonplanar solar cells
US20100132765A1 (en) * 2006-05-19 2010-06-03 Cumpston Brian H Hermetically sealed solar cells
US20100300532A1 (en) * 2006-05-19 2010-12-02 Cumpston Brian H Hermetically sealed nonplanar solar cells
TW200814343A (en) * 2006-09-12 2008-03-16 Delta Electronics Inc Energy collecting system
TWI401810B (zh) * 2006-10-04 2013-07-11 Gigastorage Corp 太陽能電池
EP2079475A2 (fr) * 2006-10-06 2009-07-22 Solyndra, Inc. Appareil photovoltaïque étanche
US20080083449A1 (en) * 2006-10-06 2008-04-10 Solyndra, Inc., A Delaware Corporation Sealed photovoltaic apparatus
US8035028B2 (en) * 2006-10-09 2011-10-11 Solexel, Inc. Pyramidal three-dimensional thin-film solar cells
US7999174B2 (en) * 2006-10-09 2011-08-16 Solexel, Inc. Solar module structures and assembly methods for three-dimensional thin-film solar cells
US8035027B2 (en) * 2006-10-09 2011-10-11 Solexel, Inc. Solar module structures and assembly methods for pyramidal three-dimensional thin-film solar cells
US8193076B2 (en) 2006-10-09 2012-06-05 Solexel, Inc. Method for releasing a thin semiconductor substrate from a reusable template
US8293558B2 (en) * 2006-10-09 2012-10-23 Solexel, Inc. Method for releasing a thin-film substrate
US20100304521A1 (en) * 2006-10-09 2010-12-02 Solexel, Inc. Shadow Mask Methods For Manufacturing Three-Dimensional Thin-Film Solar Cells
US20080264477A1 (en) * 2006-10-09 2008-10-30 Soltaix, Inc. Methods for manufacturing three-dimensional thin-film solar cells
KR100900443B1 (ko) * 2006-11-20 2009-06-01 엘지전자 주식회사 태양전지 및 그의 제조방법
US20100066779A1 (en) 2006-11-28 2010-03-18 Hanan Gothait Method and system for nozzle compensation in non-contact material deposition
WO2009026240A1 (fr) * 2007-08-17 2009-02-26 Solexel, Inc. Procédé de revêtement, par transfert de liquide, de substrats 3d
US20100000602A1 (en) * 2007-12-11 2010-01-07 Evergreen Solar, Inc. Photovoltaic Cell with Efficient Finger and Tab Layout
CN101884113B (zh) * 2007-12-11 2012-12-05 长青太阳能股份有限公司 具有细的指状物的光电板和电池及其制造方法
DE102008033169A1 (de) * 2008-05-07 2009-11-12 Ersol Solar Energy Ag Verfahren zur Herstellung einer monokristallinen Solarzelle
US20100144080A1 (en) * 2008-06-02 2010-06-10 Solexel, Inc. Method and apparatus to transfer coat uneven surface
WO2009157879A1 (fr) * 2008-06-26 2009-12-30 National University Of Singapore Dispositif photovoltaïque
US8294026B2 (en) * 2008-11-13 2012-10-23 Solexel, Inc. High-efficiency thin-film solar cells
US8288195B2 (en) * 2008-11-13 2012-10-16 Solexel, Inc. Method for fabricating a three-dimensional thin-film semiconductor substrate from a template
WO2010063003A1 (fr) * 2008-11-26 2010-06-03 Solexel, Inc. Structures pyramidales tronquées pour des cellules solaires transparentes
KR101358340B1 (ko) 2008-11-30 2014-02-06 엑스제트 엘티디. 기판 상에 물질을 도포하는 방법 및 시스템
US8926803B2 (en) * 2009-01-15 2015-01-06 Solexel, Inc. Porous silicon electro-etching system and method
US9076642B2 (en) 2009-01-15 2015-07-07 Solexel, Inc. High-Throughput batch porous silicon manufacturing equipment design and processing methods
US8906218B2 (en) 2010-05-05 2014-12-09 Solexel, Inc. Apparatus and methods for uniformly forming porous semiconductor on a substrate
MY162405A (en) * 2009-02-06 2017-06-15 Solexel Inc Trench Formation Method For Releasing A Thin-Film Substrate From A Reusable Semiconductor Template
US20100206365A1 (en) * 2009-02-19 2010-08-19 Emcore Solar Power, Inc. Inverted Metamorphic Multijunction Solar Cells on Low Density Carriers
JP5185157B2 (ja) * 2009-02-25 2013-04-17 浜松ホトニクス株式会社 フォトダイオードの製造方法及びフォトダイオード
US8828517B2 (en) 2009-03-23 2014-09-09 Solexel, Inc. Structure and method for improving solar cell efficiency and mechanical strength
EP2419306B1 (fr) * 2009-04-14 2016-03-30 Solexel, Inc. Réacteur de dépôt chimique en phase vapeur (cvd) épitaxial à rendement élevé
US9099584B2 (en) * 2009-04-24 2015-08-04 Solexel, Inc. Integrated three-dimensional and planar metallization structure for thin film solar cells
EP2432027A4 (fr) * 2009-04-30 2017-06-28 Industry-University Cooperation Foundation Hanyang University Cellule solaire au silicium comprenant une couche de nanotubes de carbone
CN102460716B (zh) 2009-05-05 2015-03-25 速力斯公司 高生产率多孔半导体制造设备
US9318644B2 (en) 2009-05-05 2016-04-19 Solexel, Inc. Ion implantation and annealing for thin film crystalline solar cells
EP2432640B1 (fr) 2009-05-18 2024-04-03 Xjet Ltd. Procédé et dispositif pour une impression sur des substrats chauffés
US8445314B2 (en) * 2009-05-22 2013-05-21 Solexel, Inc. Method of creating reusable template for detachable thin film substrate
WO2010138976A1 (fr) * 2009-05-29 2010-12-02 Solexel, Inc. Substrat semi-conducteur tridimensionnel à couches minces avec trous de passage, et procédés pour sa fabrication
JP5410526B2 (ja) * 2009-07-22 2014-02-05 三菱電機株式会社 太陽電池セルの製造方法
US20110023952A1 (en) * 2009-07-30 2011-02-03 Evergreen Solar, Inc. Photovoltaic cell with semiconductor fingers
US8946839B1 (en) 2009-08-20 2015-02-03 Hrl Laboratories, Llc Reduced volume infrared detector
US7977637B1 (en) 2009-08-20 2011-07-12 Hrl Laboratories, Llc Honeycomb infrared detector
US7928389B1 (en) 2009-08-20 2011-04-19 Hrl Laboratories, Llc Wide bandwidth infrared detector and imager
US20110056548A1 (en) * 2009-09-09 2011-03-10 Li-Karn Wang Wafer-Based Solar Cell with Deeply Etched Structure
TWI458114B (zh) * 2009-09-09 2014-10-21 Big Sun Energy Technology Inc 太陽能電池之製造方法
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9673243B2 (en) 2009-09-17 2017-06-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US7955989B2 (en) * 2009-09-24 2011-06-07 Rohm And Haas Electronic Materials Llc Texturing semiconductor substrates
US20120180863A1 (en) * 2009-09-30 2012-07-19 Lg Innotek Co., Ltd. Solar cell apparatus and method of fabricating the same
EP2510550A4 (fr) 2009-12-09 2014-12-24 Solexel Inc Structures de cellules solaires photovoltaïques haut rendement à contacts sur la face arrière et procédés de fabrication utilisant des absorbeurs semi-conducteurs tridimensionnels
CN102844883B (zh) 2010-02-12 2016-01-20 速力斯公司 用于制造光电池和微电子器件的半导体衬底的双面可重复使用的模板
JP2013527598A (ja) * 2010-03-24 2013-06-27 サイオニクス、インク． 高められた電磁放射線検出を有するデバイス及び関連方法
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN102858547A (zh) 2010-05-02 2013-01-02 Xjet有限公司 带有自清洗、防沉积与除烟气装置的打印系统
KR101369282B1 (ko) 2010-06-09 2014-03-04 솔렉셀, 인크. 고생산성 박막 증착 방법 및 시스템
CN103081128B (zh) 2010-06-18 2016-11-02 西奥尼克斯公司 高速光敏设备及相关方法
US9991407B1 (en) * 2010-06-22 2018-06-05 Banpil Photonics Inc. Process for creating high efficiency photovoltaic cells
CN103097141A (zh) 2010-07-22 2013-05-08 迅捷有限公司 打印头喷嘴评价
EP2601687A4 (fr) 2010-08-05 2018-03-07 Solexel, Inc. Renforcement de plan arrière et interconnexions pour cellules solaires
JP5477220B2 (ja) * 2010-08-05 2014-04-23 信越化学工業株式会社 太陽電池及びその製造方法
WO2012024676A2 (fr) * 2010-08-20 2012-02-23 First Solar, Inc. Module photovoltaïque anti-réfléchissant
KR100997111B1 (ko) * 2010-08-25 2010-11-30 엘지전자 주식회사 태양 전지
US9085829B2 (en) 2010-08-31 2015-07-21 International Business Machines Corporation Electrodeposition of thin-film cells containing non-toxic elements
KR101733055B1 (ko) * 2010-09-06 2017-05-24 엘지전자 주식회사 태양 전지 모듈
JP5933883B2 (ja) 2010-10-18 2016-06-15 エックスジェット エルティーディー． インクジェットヘッドの保管及びクリーニング
TWI452621B (zh) * 2010-11-01 2014-09-11 Univ Nat Cheng Kung Separation method of epitaxial element
KR101729745B1 (ko) * 2011-01-05 2017-04-24 엘지전자 주식회사 태양전지 및 이의 제조 방법
JP5645734B2 (ja) * 2011-03-31 2014-12-24 京セラ株式会社 太陽電池素子
EP2710639A4 (fr) 2011-05-20 2015-11-25 Solexel Inc Polarisation de surface avant auto-activée pour une pile solaire
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
KR20120137821A (ko) 2011-06-13 2012-12-24 엘지전자 주식회사 태양전지
EP2732402A2 (fr) 2011-07-13 2014-05-21 Sionyx, Inc. Dispositifs de prise d'images biométriques et procédés associés
CN103094411A (zh) * 2011-11-01 2013-05-08 智盛全球股份有限公司 复合式太阳能电池的多晶硅基板的制作方法
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
WO2013179282A1 (fr) * 2012-05-28 2013-12-05 Xjet Ltd. Structure conductrice d'électricité de cellule solaire et procédé
JP5919567B2 (ja) * 2012-05-31 2016-05-18 パナソニックＩｐマネジメント株式会社 テクスチャサイズの測定装置、太陽電池の製造システム、及び太陽電池の製造方法
JP5781488B2 (ja) * 2012-11-07 2015-09-24 シャープ株式会社 結晶太陽電池セルおよび結晶太陽電池セルの製造方法
JP6273583B2 (ja) * 2012-11-30 2018-02-07 パナソニックＩｐマネジメント株式会社 太陽電池
JP6466346B2 (ja) 2013-02-15 2019-02-06 サイオニクス、エルエルシー アンチブルーミング特性を有するハイダイナミックレンジｃｍｏｓ画像センサおよび関連づけられた方法
US9490292B1 (en) 2013-03-15 2016-11-08 Hrl Laboratories, Llc Dual-band detector array
US10903261B1 (en) 2013-03-15 2021-01-26 Hrl Laboratories, Llc Triple output, dual-band detector
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
WO2014209421A1 (fr) 2013-06-29 2014-12-31 Sionyx, Inc. Régions texturées formées de tranchées peu profondes et procédés associés.
CN105849208A (zh) 2013-10-17 2016-08-10 Xjet有限公司 用于3d喷墨打印的碳化钨/钴油墨组合物
JP5920421B2 (ja) * 2014-08-21 2016-05-18 信越化学工業株式会社 太陽電池モジュールの製造方法
JP2016086117A (ja) * 2014-10-28 2016-05-19 株式会社東芝 太陽電池、太陽電池パネル及び太陽電池フィルム
KR20160068338A (ko) * 2014-12-05 2016-06-15 현대자동차주식회사 차량용 차체 일체형 태양전지
KR102600379B1 (ko) * 2015-12-21 2023-11-10 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지와 그 제조 방법
KR102526398B1 (ko) * 2016-01-12 2023-04-27 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 태양 전지 및 이의 제조 방법
US10020331B1 (en) 2016-07-21 2018-07-10 Hrl Laboratories, Llc Dual-band lateral-effect position sensor
JP6986418B2 (ja) * 2017-11-07 2021-12-22 株式会社カネカ 積層型光電変換装置および積層型光電変換装置モジュールの製造方法
EP3782206A4 (fr) * 2018-04-16 2021-05-19 Sunpower Corporation Cellules solaires ayant des jonctions rétractées à partir de bords clivés

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2115305C2 (de) * 1971-03-30 1982-09-30 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Solarzelle aus einem Halbleiterkörper
DE2359511C2 (de) * 1973-11-29 1987-03-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zum lokalisierten Ätzen von Gräben in Siliciumkristallen
US3961997A (en) * 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4131488A (en) * 1975-12-31 1978-12-26 Motorola, Inc. Method of semiconductor solar energy device fabrication
US4128680A (en) * 1977-06-03 1978-12-05 Honeywell Inc. Silicon coated ceramic substrate with improvements for making electrical contact to the interface surface of the silicon
DE2754652A1 (de) * 1977-12-08 1979-06-13 Ibm Deutschland Verfahren zum herstellen von silicium-photoelementen
US4208240A (en) * 1979-01-26 1980-06-17 Gould Inc. Method and apparatus for controlling plasma etching
US4224520A (en) * 1979-07-13 1980-09-23 The United States Of America As Represented By The Secretary Of The Navy Room temperature two color infrared detector
US4251285A (en) * 1979-08-14 1981-02-17 Westinghouse Electric Corp. Diffusion of dopant from optical coating and single step formation of PN junction in silicon solar cell and coating thereon
US4416053A (en) * 1980-03-24 1983-11-22 Hughes Aircraft Company Method of fabricating gallium arsenide burris FET structure for optical detection
JPS56134782A (en) * 1980-03-25 1981-10-21 Mitsubishi Electric Corp Solar cell
JPS5785270A (en) * 1980-11-17 1982-05-27 Mitsubishi Electric Corp Solar cell
US4498225A (en) * 1981-05-06 1985-02-12 The United States Of America As Represented By The Secretary Of The Army Method of forming variable sensitivity transmission mode negative electron affinity photocathode
JPS59214267A (ja) * 1983-05-20 1984-12-04 Toshiba Corp 半導体圧力変換器の製造方法
DE3528087C2 (de) * 1984-08-06 1995-02-09 Showa Aluminum Corp Substrat für Solarzellen aus amorphem Silicium
FR2579832B1 (fr) * 1985-03-26 1987-11-06 Centre Nat Etd Spatiales Procede d'allegement de cellules solaires et cellules ainsi obtenues
JPS61247090A (ja) * 1985-04-24 1986-11-04 日本ペイント株式会社 半田スル−ホ−ルを有する回路板の製造方法
JPS62171167A (ja) * 1986-01-23 1987-07-28 Mitsubishi Electric Corp 太陽電池の製造方法
JPS635576A (ja) * 1986-06-25 1988-01-11 Mitsubishi Electric Corp 太陽電池
US4725559A (en) * 1986-10-23 1988-02-16 Chevron Research Company Process for the fabrication of a gallium arsenide grating solar cell
JPS63196082A (ja) * 1987-02-10 1988-08-15 Toa Nenryo Kogyo Kk 太陽電池の製造方法
US4773945A (en) * 1987-09-14 1988-09-27 Ga Technologies, Inc. Solar cell with low infra-red absorption and method of manufacture
DE3741036A1 (de) * 1987-12-03 1989-06-15 Fraunhofer Ges Forschung Mikromechanischer beschleunigungsmesser
US5057163A (en) * 1988-05-04 1991-10-15 Astropower, Inc. Deposited-silicon film solar cell
JPH0249474A (ja) * 1988-05-25 1990-02-19 Tonen Corp 太陽電池及びその製造方法
JPH0290644A (ja) * 1988-09-28 1990-03-30 Nec Corp 半導体装置の製造方法
JPH02244681A (ja) * 1989-03-15 1990-09-28 Mitsubishi Electric Corp 太陽電池
JPH0334583A (ja) * 1989-06-30 1991-02-14 Sharp Corp 半導体装置
JPH0397274A (ja) * 1989-09-11 1991-04-23 Sharp Corp 太陽電池の製造方法
US4961821A (en) * 1989-11-22 1990-10-09 Xerox Corporation Ode through holes and butt edges without edge dicing
JPH0795602B2 (ja) * 1989-12-01 1995-10-11 三菱電機株式会社 太陽電池及びその製造方法
FR2656738B1 (fr) * 1989-12-29 1995-03-17 Telemecanique Procede pour fabriquer un dispositif semiconducteur, dispositif et composant semiconducteur obtenus par le procede.
JP2536677B2 (ja) * 1990-08-01 1996-09-18 三菱電機株式会社 太陽電池の製造方法
JPH04274374A (ja) * 1991-02-28 1992-09-30 Mitsubishi Electric Corp 太陽電池及びその製造方法
FR2684801B1 (fr) * 1991-12-06 1997-01-24 Picogiga Sa Procede de realisation de composants semiconducteurs, notamment sur gaas ou inp, avec recuperation du substrat par voie chimique.
US5261970A (en) * 1992-04-08 1993-11-16 Sverdrup Technology, Inc. Optoelectronic and photovoltaic devices with low-reflectance surfaces
EP0573921A3 (en) * 1992-06-12 1994-09-28 Seiko Instr Inc Semiconductor device having a semiconductor film of low oxygen concentration
JP3242452B2 (ja) * 1992-06-19 2001-12-25 三菱電機株式会社 薄膜太陽電池の製造方法
JPH0653538A (ja) * 1992-07-28 1994-02-25 Toshiba Corp 半導体受光素子
JP3360919B2 (ja) * 1993-06-11 2003-01-07 三菱電機株式会社 薄膜太陽電池の製造方法，及び薄膜太陽電池
JP3169497B2 (ja) * 1993-12-24 2001-05-28 三菱電機株式会社 太陽電池の製造方法
US5584941A (en) * 1994-03-22 1996-12-17 Canon Kabushiki Kaisha Solar cell and production process therefor
JP3578539B2 (ja) * 1996-02-08 2004-10-20 三菱電機株式会社 太陽電池の製造方法および太陽電池構造

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US5472885A (en) 1995-12-05
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US5397400A (en) 1995-03-14
DE4324647A1 (de) 1994-01-27

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