JPS56134782A - Solar cell - Google Patents

Solar cell

Info

Publication number
JPS56134782A
JPS56134782A JP3980080A JP3980080A JPS56134782A JP S56134782 A JPS56134782 A JP S56134782A JP 3980080 A JP3980080 A JP 3980080A JP 3980080 A JP3980080 A JP 3980080A JP S56134782 A JPS56134782 A JP S56134782A
Authority
JP
Japan
Prior art keywords
parts
regard
weight
light incident
mechanical strength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3980080A
Other languages
Japanese (ja)
Inventor
Saburo Takamiya
Susumu Yoshida
Kotaro Mitsui
Takao Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP3980080A priority Critical patent/JPS56134782A/en
Publication of JPS56134782A publication Critical patent/JPS56134782A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To decrease the weight by making the bottom region opposite to the light incident surface thin with beam shaped parts being remained with regard to the active region of a semiconductor substrate. CONSTITUTION:With regard to a PN junction 3 of a GaAs substrate 1, thin parts 11 and thick parts 12 are provided in the region opposite to the light incident surface 7. If the area ratio between the parts 11 and 12 is adequately selected, the mechanical strength can be freely controlled, and the weight can be decreased without loosing the easiness in handling and mechanical strength.
JP3980080A 1980-03-25 1980-03-25 Solar cell Pending JPS56134782A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3980080A JPS56134782A (en) 1980-03-25 1980-03-25 Solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3980080A JPS56134782A (en) 1980-03-25 1980-03-25 Solar cell

Publications (1)

Publication Number Publication Date
JPS56134782A true JPS56134782A (en) 1981-10-21

Family

ID=12563023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3980080A Pending JPS56134782A (en) 1980-03-25 1980-03-25 Solar cell

Country Status (1)

Country Link
JP (1) JPS56134782A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4324647A1 (en) * 1992-07-22 1994-01-27 Mitsubishi Electric Corp Thin-film solar cell comprising thin photoelectric conversion layer, carrier structure and contact electrode - uses less highly pure semiconductor material so reducing cell cost
EP0768720A3 (en) * 1995-10-10 1998-07-01 Spectrolab, Inc. Solar cell with integrated bypass diode and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4324647A1 (en) * 1992-07-22 1994-01-27 Mitsubishi Electric Corp Thin-film solar cell comprising thin photoelectric conversion layer, carrier structure and contact electrode - uses less highly pure semiconductor material so reducing cell cost
DE4324647C2 (en) * 1992-07-22 2000-03-02 Mitsubishi Electric Corp Thin film solar cell and manufacturing process therefor
EP0768720A3 (en) * 1995-10-10 1998-07-01 Spectrolab, Inc. Solar cell with integrated bypass diode and method

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