FR2462780A1 - Procede de fabrication d'une jonction p-n a tension de rupture elevee - Google Patents

Procede de fabrication d'une jonction p-n a tension de rupture elevee Download PDF

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Publication number
FR2462780A1
FR2462780A1 FR8016605A FR8016605A FR2462780A1 FR 2462780 A1 FR2462780 A1 FR 2462780A1 FR 8016605 A FR8016605 A FR 8016605A FR 8016605 A FR8016605 A FR 8016605A FR 2462780 A1 FR2462780 A1 FR 2462780A1
Authority
FR
France
Prior art keywords
impurity
stage
layer
substrate
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8016605A
Other languages
English (en)
French (fr)
Other versions
FR2462780B1 (enExample
Inventor
Jagir S Multani
Jagtar Sandhu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
Arris Technology Inc
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arris Technology Inc, General Instrument Corp filed Critical Arris Technology Inc
Publication of FR2462780A1 publication Critical patent/FR2462780A1/fr
Application granted granted Critical
Publication of FR2462780B1 publication Critical patent/FR2462780B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices

Landscapes

  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR8016605A 1979-08-01 1980-07-28 Procede de fabrication d'une jonction p-n a tension de rupture elevee Granted FR2462780A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6267679A 1979-08-01 1979-08-01

Publications (2)

Publication Number Publication Date
FR2462780A1 true FR2462780A1 (fr) 1981-02-13
FR2462780B1 FR2462780B1 (enExample) 1983-02-18

Family

ID=22044093

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8016605A Granted FR2462780A1 (fr) 1979-08-01 1980-07-28 Procede de fabrication d'une jonction p-n a tension de rupture elevee

Country Status (5)

Country Link
JP (1) JPS5623742A (enExample)
DE (1) DE3028185A1 (enExample)
FR (1) FR2462780A1 (enExample)
GB (1) GB2056168A (enExample)
IT (1) IT1145411B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369072A (en) * 1981-01-22 1983-01-18 International Business Machines Corp. Method for forming IGFET devices having improved drain voltage characteristics
JPS60117681A (ja) * 1983-11-29 1985-06-25 Mitsubishi Electric Corp 半導体装置
JPH063798B2 (ja) * 1985-02-06 1994-01-12 日本電気株式会社 半導体装置の製造方法
JPH01147829A (ja) * 1987-12-04 1989-06-09 Toshiba Corp 半導体装置の製造方法
JP2706460B2 (ja) * 1988-03-14 1998-01-28 富士通株式会社 イオン注入方法
JP4629809B2 (ja) * 1996-03-27 2011-02-09 クリー，インコーポレイテッド ＳｉＣの半導体層を有する半導体素子を製造する方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2148205A1 (enExample) * 1971-08-05 1973-03-11 Rca Corp
FR2216675A1 (enExample) * 1973-01-31 1974-08-30 Siemens Ag
DE2823967A1 (de) * 1977-06-09 1978-12-14 Tokyo Shibaura Electric Co Npn-transistor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IL40189A0 (en) * 1971-09-09 1972-10-29 Trusty J Method and apparatus for preparing and analyzing serum samples

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2148205A1 (enExample) * 1971-08-05 1973-03-11 Rca Corp
FR2216675A1 (enExample) * 1973-01-31 1974-08-30 Siemens Ag
DE2823967A1 (de) * 1977-06-09 1978-12-14 Tokyo Shibaura Electric Co Npn-transistor

Also Published As

Publication number Publication date
FR2462780B1 (enExample) 1983-02-18
JPS5623742A (en) 1981-03-06
IT1145411B (it) 1986-11-05
IT8049389A0 (it) 1980-07-31
DE3028185A1 (de) 1981-02-26
GB2056168A (en) 1981-03-11

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