IT1145411B - Procedimento di fabbricazione di giunzione p-n ad alta tensione di rottura - Google Patents

Procedimento di fabbricazione di giunzione p-n ad alta tensione di rottura

Info

Publication number
IT1145411B
IT1145411B IT49389/80A IT4938980A IT1145411B IT 1145411 B IT1145411 B IT 1145411B IT 49389/80 A IT49389/80 A IT 49389/80A IT 4938980 A IT4938980 A IT 4938980A IT 1145411 B IT1145411 B IT 1145411B
Authority
IT
Italy
Prior art keywords
manufacturing procedure
high breaking
breaking voltage
junction manufacturing
junction
Prior art date
Application number
IT49389/80A
Other languages
English (en)
Italian (it)
Other versions
IT8049389A0 (it
Inventor
Multani S Jagir
Dandhu Jagtar
Original Assignee
Gen Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Instrument Corp filed Critical Gen Instrument Corp
Publication of IT8049389A0 publication Critical patent/IT8049389A0/it
Application granted granted Critical
Publication of IT1145411B publication Critical patent/IT1145411B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
IT49389/80A 1979-08-01 1980-07-31 Procedimento di fabbricazione di giunzione p-n ad alta tensione di rottura IT1145411B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6267679A 1979-08-01 1979-08-01

Publications (2)

Publication Number Publication Date
IT8049389A0 IT8049389A0 (it) 1980-07-31
IT1145411B true IT1145411B (it) 1986-11-05

Family

ID=22044093

Family Applications (1)

Application Number Title Priority Date Filing Date
IT49389/80A IT1145411B (it) 1979-08-01 1980-07-31 Procedimento di fabbricazione di giunzione p-n ad alta tensione di rottura

Country Status (5)

Country Link
JP (1) JPS5623742A (enExample)
DE (1) DE3028185A1 (enExample)
FR (1) FR2462780A1 (enExample)
GB (1) GB2056168A (enExample)
IT (1) IT1145411B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369072A (en) * 1981-01-22 1983-01-18 International Business Machines Corp. Method for forming IGFET devices having improved drain voltage characteristics
JPS60117681A (ja) * 1983-11-29 1985-06-25 Mitsubishi Electric Corp 半導体装置
JPH063798B2 (ja) * 1985-02-06 1994-01-12 日本電気株式会社 半導体装置の製造方法
JPH01147829A (ja) * 1987-12-04 1989-06-09 Toshiba Corp 半導体装置の製造方法
JP2706460B2 (ja) * 1988-03-14 1998-01-28 富士通株式会社 イオン注入方法
JP4629809B2 (ja) * 1996-03-27 2011-02-09 クリー，インコーポレイテッド ＳｉＣの半導体層を有する半導体素子を製造する方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT956828B (it) * 1971-08-05 1973-10-10 Rca Corp Processo per l ottenimento di regio ni diffuse a semiconduttore presen tanti un numero ridotto di difetti nel cristallo
IL40189A0 (en) * 1971-09-09 1972-10-29 Trusty J Method and apparatus for preparing and analyzing serum samples
DE2304647C2 (de) * 1973-01-31 1984-06-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper
JPS543479A (en) * 1977-06-09 1979-01-11 Toshiba Corp Semiconductor device and its manufacture

Also Published As

Publication number Publication date
FR2462780B1 (enExample) 1983-02-18
FR2462780A1 (fr) 1981-02-13
JPS5623742A (en) 1981-03-06
IT8049389A0 (it) 1980-07-31
DE3028185A1 (de) 1981-02-26
GB2056168A (en) 1981-03-11

Similar Documents

Publication Publication Date Title
IT1132650B (it) Procedimento di fabbricazione di 5-idrossimetilfurfurolo
IT8222683A0 (it) Generatore di tensione diriferimento.
JPS52130291A (en) Low voltage breaking pn junction structure
IT1080247B (it) Procedimento multiplo migliorato di poliesterificazione
IT1140694B (it) Comparatore di tensione
IT7921361A0 (it) Alimentatore ad alta frequenza e ad alta tensione.
IT8025512A0 (it) Terminale per cavo ad alta tensione.
IT1111987B (it) Dispositivo generatore di tensione di riferimento
IT1145411B (it) Procedimento di fabbricazione di giunzione p-n ad alta tensione di rottura
IT1140622B (it) Dispositivo generatore di alta tensione
IT1098069B (it) Impianto di accensione con una distribuzione ad alta tensione meccanicamente non mossa
IT1084186B (it) Circuito di prova sintetica per interruttori elettrici ad alta tensione blindati
IT1135292B (it) Dispositivo semiconduttore ad alta tensione di scarica
IT1123638B (it) Elettrolizzatore ad alta tensione con perdite deboli
IT7819354A0 (it) Circuito di prova sintetico per interruttori di potenza ad alta tensione.
IT1059086B (it) Procedimento per la passivazione di dispositivi a semiconduttore di potenza ad alta tensione inversa
IT1066923B (it) Raddrizzatore ad alta tensione
IT1128021B (it) Stazione elettrica ad altissimatensione
IT1091020B (it) Generatore di tensione sinusoidale di potenza
FI771711A7 (fi) Anordning foer lyftning av flak foer vaordarbete i luften lyftkorg i lyftkran
IT1128493B (it) Dispositivo di manovra di un disgiuntore ad alta tensione
BR7700493A (pt) Processo para fabricar um isolamento para dispositivo de alta tensao
IT1096507B (it) Isolatore composito per alta tensione
DK67079A (da) Hoejspaendingsisolator
IT1078321B (it) Avvolgimento elettrico ad alta tensione

Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19970729