JPS5623742A - Method of manufactufacturing pn junction - Google Patents

Method of manufactufacturing pn junction

Info

Publication number
JPS5623742A
JPS5623742A JP10062980A JP10062980A JPS5623742A JP S5623742 A JPS5623742 A JP S5623742A JP 10062980 A JP10062980 A JP 10062980A JP 10062980 A JP10062980 A JP 10062980A JP S5623742 A JPS5623742 A JP S5623742A
Authority
JP
Japan
Prior art keywords
manufactufacturing
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10062980A
Other languages
English (en)
Japanese (ja)
Inventor
Esu Murutaani Jiyagiiru
Sandeyuu Jiyagutaaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Instrument Corp filed Critical General Instrument Corp
Publication of JPS5623742A publication Critical patent/JPS5623742A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H10P30/212—Through-implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices

Landscapes

  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP10062980A 1979-08-01 1980-07-24 Method of manufactufacturing pn junction Pending JPS5623742A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6267679A 1979-08-01 1979-08-01

Publications (1)

Publication Number Publication Date
JPS5623742A true JPS5623742A (en) 1981-03-06

Family

ID=22044093

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10062980A Pending JPS5623742A (en) 1979-08-01 1980-07-24 Method of manufactufacturing pn junction

Country Status (5)

Country Link
JP (1) JPS5623742A (enExample)
DE (1) DE3028185A1 (enExample)
FR (1) FR2462780A1 (enExample)
GB (1) GB2056168A (enExample)
IT (1) IT1145411B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181147A (ja) * 1985-02-06 1986-08-13 Nec Corp 半導体装置の製造方法
JP2000507396A (ja) * 1996-03-27 2000-06-13 エービービー リサーチ リミテッド ＳｉＣの半導体層を有する半導体素子およびそのような素子を作る方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369072A (en) * 1981-01-22 1983-01-18 International Business Machines Corp. Method for forming IGFET devices having improved drain voltage characteristics
JPS60117681A (ja) * 1983-11-29 1985-06-25 Mitsubishi Electric Corp 半導体装置
JPH01147829A (ja) * 1987-12-04 1989-06-09 Toshiba Corp 半導体装置の製造方法
JP2706460B2 (ja) * 1988-03-14 1998-01-28 富士通株式会社 イオン注入方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836986A (enExample) * 1971-09-09 1973-05-31

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT956828B (it) * 1971-08-05 1973-10-10 Rca Corp Processo per l ottenimento di regio ni diffuse a semiconduttore presen tanti un numero ridotto di difetti nel cristallo
DE2304647C2 (de) * 1973-01-31 1984-06-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper
JPS543479A (en) * 1977-06-09 1979-01-11 Toshiba Corp Semiconductor device and its manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4836986A (enExample) * 1971-09-09 1973-05-31

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61181147A (ja) * 1985-02-06 1986-08-13 Nec Corp 半導体装置の製造方法
JP2000507396A (ja) * 1996-03-27 2000-06-13 エービービー リサーチ リミテッド ＳｉＣの半導体層を有する半導体素子およびそのような素子を作る方法

Also Published As

Publication number Publication date
FR2462780B1 (enExample) 1983-02-18
FR2462780A1 (fr) 1981-02-13
IT1145411B (it) 1986-11-05
IT8049389A0 (it) 1980-07-31
DE3028185A1 (de) 1981-02-26
GB2056168A (en) 1981-03-11

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