DE3028185A1 - Verfahren zur erzeugung einer stoerstellenschicht - Google Patents
Verfahren zur erzeugung einer stoerstellenschichtInfo
- Publication number
- DE3028185A1 DE3028185A1 DE19803028185 DE3028185A DE3028185A1 DE 3028185 A1 DE3028185 A1 DE 3028185A1 DE 19803028185 DE19803028185 DE 19803028185 DE 3028185 A DE3028185 A DE 3028185A DE 3028185 A1 DE3028185 A1 DE 3028185A1
- Authority
- DE
- Germany
- Prior art keywords
- impurity
- substrate
- layer
- ions
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
- H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P30/00—Ion implantation into wafers, substrates or parts of devices
- H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
- H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
- H10P30/212—Through-implantation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
Landscapes
- Thyristors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6267679A | 1979-08-01 | 1979-08-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE3028185A1 true DE3028185A1 (de) | 1981-02-26 |
Family
ID=22044093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803028185 Ceased DE3028185A1 (de) | 1979-08-01 | 1980-07-25 | Verfahren zur erzeugung einer stoerstellenschicht |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5623742A (enExample) |
| DE (1) | DE3028185A1 (enExample) |
| FR (1) | FR2462780A1 (enExample) |
| GB (1) | GB2056168A (enExample) |
| IT (1) | IT1145411B (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3442644A1 (de) * | 1983-11-29 | 1985-06-05 | Mitsubishi Denki K.K., Tokio/Tokyo | Halbleiterbauteil |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4369072A (en) * | 1981-01-22 | 1983-01-18 | International Business Machines Corp. | Method for forming IGFET devices having improved drain voltage characteristics |
| JPH063798B2 (ja) * | 1985-02-06 | 1994-01-12 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH01147829A (ja) * | 1987-12-04 | 1989-06-09 | Toshiba Corp | 半導体装置の製造方法 |
| JP2706460B2 (ja) * | 1988-03-14 | 1998-01-28 | 富士通株式会社 | イオン注入方法 |
| JP4629809B2 (ja) * | 1996-03-27 | 2011-02-09 | クリー，インコーポレイテッド | ＳｉＣの半導体層を有する半導体素子を製造する方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IT956828B (it) * | 1971-08-05 | 1973-10-10 | Rca Corp | Processo per l ottenimento di regio ni diffuse a semiconduttore presen tanti un numero ridotto di difetti nel cristallo |
| IL40189A0 (en) * | 1971-09-09 | 1972-10-29 | Trusty J | Method and apparatus for preparing and analyzing serum samples |
| DE2304647C2 (de) * | 1973-01-31 | 1984-06-28 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper |
| JPS543479A (en) * | 1977-06-09 | 1979-01-11 | Toshiba Corp | Semiconductor device and its manufacture |
-
1980
- 1980-04-16 GB GB8012509A patent/GB2056168A/en not_active Withdrawn
- 1980-07-24 JP JP10062980A patent/JPS5623742A/ja active Pending
- 1980-07-25 DE DE19803028185 patent/DE3028185A1/de not_active Ceased
- 1980-07-28 FR FR8016605A patent/FR2462780A1/fr active Granted
- 1980-07-31 IT IT49389/80A patent/IT1145411B/it active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3442644A1 (de) * | 1983-11-29 | 1985-06-05 | Mitsubishi Denki K.K., Tokio/Tokyo | Halbleiterbauteil |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2462780B1 (enExample) | 1983-02-18 |
| FR2462780A1 (fr) | 1981-02-13 |
| JPS5623742A (en) | 1981-03-06 |
| IT1145411B (it) | 1986-11-05 |
| IT8049389A0 (it) | 1980-07-31 |
| GB2056168A (en) | 1981-03-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAP | Request for examination filed | ||
| OD | Request for examination | ||
| 8131 | Rejection |