FR2216675A1 - - Google Patents
Info
- Publication number
- FR2216675A1 FR2216675A1 FR7403136A FR7403136A FR2216675A1 FR 2216675 A1 FR2216675 A1 FR 2216675A1 FR 7403136 A FR7403136 A FR 7403136A FR 7403136 A FR7403136 A FR 7403136A FR 2216675 A1 FR2216675 A1 FR 2216675A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2304647A DE2304647C2 (de) | 1973-01-31 | 1973-01-31 | Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2216675A1 true FR2216675A1 (enExample) | 1974-08-30 |
| FR2216675B1 FR2216675B1 (enExample) | 1978-11-10 |
Family
ID=5870476
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7403136A Expired FR2216675B1 (enExample) | 1973-01-31 | 1974-01-30 |
Country Status (5)
| Country | Link |
|---|---|
| DE (1) | DE2304647C2 (enExample) |
| FR (1) | FR2216675B1 (enExample) |
| GB (1) | GB1428302A (enExample) |
| IT (1) | IT1006157B (enExample) |
| NL (1) | NL7400646A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2462780A1 (fr) * | 1979-08-01 | 1981-02-13 | Gen Instrument Corp | Procede de fabrication d'une jonction p-n a tension de rupture elevee |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3017313A1 (de) * | 1980-05-06 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3197710A (en) * | 1963-05-31 | 1965-07-27 | Westinghouse Electric Corp | Complementary transistor structure |
-
1973
- 1973-01-31 DE DE2304647A patent/DE2304647C2/de not_active Expired
-
1974
- 1974-01-17 NL NL7400646A patent/NL7400646A/xx unknown
- 1974-01-18 GB GB248774A patent/GB1428302A/en not_active Expired
- 1974-01-25 IT IT19803/74A patent/IT1006157B/it active
- 1974-01-30 FR FR7403136A patent/FR2216675B1/fr not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2462780A1 (fr) * | 1979-08-01 | 1981-02-13 | Gen Instrument Corp | Procede de fabrication d'une jonction p-n a tension de rupture elevee |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2304647A1 (de) | 1974-08-01 |
| IT1006157B (it) | 1976-09-30 |
| DE2304647C2 (de) | 1984-06-28 |
| NL7400646A (enExample) | 1974-08-02 |
| FR2216675B1 (enExample) | 1978-11-10 |
| GB1428302A (en) | 1976-03-17 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |