GB1428302A - Production of doped zones in semiconductor bodies - Google Patents

Production of doped zones in semiconductor bodies

Info

Publication number
GB1428302A
GB1428302A GB248774A GB248774A GB1428302A GB 1428302 A GB1428302 A GB 1428302A GB 248774 A GB248774 A GB 248774A GB 248774 A GB248774 A GB 248774A GB 1428302 A GB1428302 A GB 1428302A
Authority
GB
United Kingdom
Prior art keywords
region
conductivity type
production
semiconductor bodies
doped zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB248774A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1428302A publication Critical patent/GB1428302A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)
  • Photovoltaic Devices (AREA)
GB248774A 1973-01-31 1974-01-18 Production of doped zones in semiconductor bodies Expired GB1428302A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2304647A DE2304647C2 (de) 1973-01-31 1973-01-31 Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper

Publications (1)

Publication Number Publication Date
GB1428302A true GB1428302A (en) 1976-03-17

Family

ID=5870476

Family Applications (1)

Application Number Title Priority Date Filing Date
GB248774A Expired GB1428302A (en) 1973-01-31 1974-01-18 Production of doped zones in semiconductor bodies

Country Status (5)

Country Link
DE (1) DE2304647C2 (enExample)
FR (1) FR2216675B1 (enExample)
GB (1) GB1428302A (enExample)
IT (1) IT1006157B (enExample)
NL (1) NL7400646A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2056168A (en) * 1979-08-01 1981-03-11 Gen Instrument Corp Method of fabricating P-N junction with high breakdown voltage
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3197710A (en) * 1963-05-31 1965-07-27 Westinghouse Electric Corp Complementary transistor structure

Also Published As

Publication number Publication date
DE2304647A1 (de) 1974-08-01
IT1006157B (it) 1976-09-30
FR2216675A1 (enExample) 1974-08-30
DE2304647C2 (de) 1984-06-28
NL7400646A (enExample) 1974-08-02
FR2216675B1 (enExample) 1978-11-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee