NL7400646A - - Google Patents

Info

Publication number
NL7400646A
NL7400646A NL7400646A NL7400646A NL7400646A NL 7400646 A NL7400646 A NL 7400646A NL 7400646 A NL7400646 A NL 7400646A NL 7400646 A NL7400646 A NL 7400646A NL 7400646 A NL7400646 A NL 7400646A
Authority
NL
Netherlands
Application number
NL7400646A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7400646A publication Critical patent/NL7400646A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
NL7400646A 1973-01-31 1974-01-17 NL7400646A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2304647A DE2304647C2 (de) 1973-01-31 1973-01-31 Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper

Publications (1)

Publication Number Publication Date
NL7400646A true NL7400646A (enExample) 1974-08-02

Family

ID=5870476

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7400646A NL7400646A (enExample) 1973-01-31 1974-01-17

Country Status (5)

Country Link
DE (1) DE2304647C2 (enExample)
FR (1) FR2216675B1 (enExample)
GB (1) GB1428302A (enExample)
IT (1) IT1006157B (enExample)
NL (1) NL7400646A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2056168A (en) * 1979-08-01 1981-03-11 Gen Instrument Corp Method of fabricating P-N junction with high breakdown voltage
DE3017313A1 (de) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Thyristor mit hoher blockierspannung und verfahren zu seiner herstellung

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3197710A (en) * 1963-05-31 1965-07-27 Westinghouse Electric Corp Complementary transistor structure

Also Published As

Publication number Publication date
DE2304647A1 (de) 1974-08-01
IT1006157B (it) 1976-09-30
FR2216675A1 (enExample) 1974-08-30
DE2304647C2 (de) 1984-06-28
FR2216675B1 (enExample) 1978-11-10
GB1428302A (en) 1976-03-17

Similar Documents

Publication Publication Date Title
AR201758A1 (enExample)
AU465372B2 (enExample)
AR201235Q (enExample)
AR201231Q (enExample)
AU465453B2 (enExample)
AU471343B2 (enExample)
AU465434B2 (enExample)
AU450229B2 (enExample)
AR201229Q (enExample)
AU466283B2 (enExample)
AR199451A1 (enExample)
FR2216675B1 (enExample)
AU477823B2 (enExample)
AR195311A1 (enExample)
AR195948A1 (enExample)
AU461342B2 (enExample)
AU447540B2 (enExample)
AR197627A1 (enExample)
AR210729A1 (enExample)
AR201432A1 (enExample)
AR196382A1 (enExample)
AR200885A1 (enExample)
AR200256A1 (enExample)
AR193950A1 (enExample)
AU477824B2 (enExample)