GB1428302A - Production of doped zones in semiconductor bodies - Google Patents
Production of doped zones in semiconductor bodiesInfo
- Publication number
- GB1428302A GB1428302A GB248774A GB248774A GB1428302A GB 1428302 A GB1428302 A GB 1428302A GB 248774 A GB248774 A GB 248774A GB 248774 A GB248774 A GB 248774A GB 1428302 A GB1428302 A GB 1428302A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- conductivity type
- production
- semiconductor bodies
- doped zones
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Photovoltaic Devices (AREA)
- Thyristors (AREA)
Abstract
1428302 Semi-conductor devices SIEMENS AG 18 Jan 1974 [31 Jan 1973] 02487/74 Heading H1K A process for the production of a doped zone 4 of one conductivity type in a semiconductor body 1 of the opposite conductivity type, comprises forming a first region 2 of said one conductivity type in a surface 6 of the body 1 by diffusion or alloying, and thereafter forming a second region 3 of said one conductivity type extending further into the body 1 by ion implantation. The doping concentration in the region 2 is between 5-10<SP>19</SP> and 10<SP>20</SP> cm.<SP>-3</SP> and that in the region 3 is at most 10<SP>19</SP> cm.<SP>-3</SP>. The dopant may be boron or phosphorus.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19732304647 DE2304647C2 (en) | 1973-01-31 | 1973-01-31 | Method for producing a doped zone in a semiconductor body |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1428302A true GB1428302A (en) | 1976-03-17 |
Family
ID=5870476
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB248774A Expired GB1428302A (en) | 1973-01-31 | 1974-01-18 | Production of doped zones in semiconductor bodies |
Country Status (5)
Country | Link |
---|---|
DE (1) | DE2304647C2 (en) |
FR (1) | FR2216675B1 (en) |
GB (1) | GB1428302A (en) |
IT (1) | IT1006157B (en) |
NL (1) | NL7400646A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2056168A (en) * | 1979-08-01 | 1981-03-11 | Gen Instrument Corp | Method of fabricating P-N junction with high breakdown voltage |
DE3017313A1 (en) * | 1980-05-06 | 1981-11-12 | Siemens AG, 1000 Berlin und 8000 München | THYRISTOR WITH HIGH BLOCKING VOLTAGE AND METHOD FOR THE PRODUCTION THEREOF |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3197710A (en) * | 1963-05-31 | 1965-07-27 | Westinghouse Electric Corp | Complementary transistor structure |
-
1973
- 1973-01-31 DE DE19732304647 patent/DE2304647C2/en not_active Expired
-
1974
- 1974-01-17 NL NL7400646A patent/NL7400646A/xx unknown
- 1974-01-18 GB GB248774A patent/GB1428302A/en not_active Expired
- 1974-01-25 IT IT1980374A patent/IT1006157B/en active
- 1974-01-30 FR FR7403136A patent/FR2216675B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IT1006157B (en) | 1976-09-30 |
FR2216675B1 (en) | 1978-11-10 |
NL7400646A (en) | 1974-08-02 |
DE2304647C2 (en) | 1984-06-28 |
DE2304647A1 (en) | 1974-08-01 |
FR2216675A1 (en) | 1974-08-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |