GB1428302A - Production of doped zones in semiconductor bodies - Google Patents

Production of doped zones in semiconductor bodies

Info

Publication number
GB1428302A
GB1428302A GB248774A GB248774A GB1428302A GB 1428302 A GB1428302 A GB 1428302A GB 248774 A GB248774 A GB 248774A GB 248774 A GB248774 A GB 248774A GB 1428302 A GB1428302 A GB 1428302A
Authority
GB
United Kingdom
Prior art keywords
region
conductivity type
production
semiconductor bodies
doped zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB248774A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of GB1428302A publication Critical patent/GB1428302A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Thyristors (AREA)

Abstract

1428302 Semi-conductor devices SIEMENS AG 18 Jan 1974 [31 Jan 1973] 02487/74 Heading H1K A process for the production of a doped zone 4 of one conductivity type in a semiconductor body 1 of the opposite conductivity type, comprises forming a first region 2 of said one conductivity type in a surface 6 of the body 1 by diffusion or alloying, and thereafter forming a second region 3 of said one conductivity type extending further into the body 1 by ion implantation. The doping concentration in the region 2 is between 5-10<SP>19</SP> and 10<SP>20</SP> cm.<SP>-3</SP> and that in the region 3 is at most 10<SP>19</SP> cm.<SP>-3</SP>. The dopant may be boron or phosphorus.
GB248774A 1973-01-31 1974-01-18 Production of doped zones in semiconductor bodies Expired GB1428302A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19732304647 DE2304647C2 (en) 1973-01-31 1973-01-31 Method for producing a doped zone in a semiconductor body

Publications (1)

Publication Number Publication Date
GB1428302A true GB1428302A (en) 1976-03-17

Family

ID=5870476

Family Applications (1)

Application Number Title Priority Date Filing Date
GB248774A Expired GB1428302A (en) 1973-01-31 1974-01-18 Production of doped zones in semiconductor bodies

Country Status (5)

Country Link
DE (1) DE2304647C2 (en)
FR (1) FR2216675B1 (en)
GB (1) GB1428302A (en)
IT (1) IT1006157B (en)
NL (1) NL7400646A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2056168A (en) * 1979-08-01 1981-03-11 Gen Instrument Corp Method of fabricating P-N junction with high breakdown voltage
DE3017313A1 (en) * 1980-05-06 1981-11-12 Siemens AG, 1000 Berlin und 8000 München THYRISTOR WITH HIGH BLOCKING VOLTAGE AND METHOD FOR THE PRODUCTION THEREOF

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3197710A (en) * 1963-05-31 1965-07-27 Westinghouse Electric Corp Complementary transistor structure

Also Published As

Publication number Publication date
IT1006157B (en) 1976-09-30
FR2216675B1 (en) 1978-11-10
NL7400646A (en) 1974-08-02
DE2304647C2 (en) 1984-06-28
DE2304647A1 (en) 1974-08-01
FR2216675A1 (en) 1974-08-30

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee