ES551302A0 - Transistor con efecto de campo por barrera schottky metal-semiconductor (mesfet) - Google Patents

Transistor con efecto de campo por barrera schottky metal-semiconductor (mesfet)

Info

Publication number
ES551302A0
ES551302A0 ES551302A ES551302A ES551302A0 ES 551302 A0 ES551302 A0 ES 551302A0 ES 551302 A ES551302 A ES 551302A ES 551302 A ES551302 A ES 551302A ES 551302 A0 ES551302 A0 ES 551302A0
Authority
ES
Spain
Prior art keywords
mesfet
field effect
effect transistor
schottky metal
semiconductor barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES551302A
Other languages
English (en)
Other versions
ES8800788A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telettra Laboratori di Telefonia Elettronica e Radio SpA
Telettra SpA
Original Assignee
Telettra Telefonia Elettronica e Radio SpA
Telettra Laboratori di Telefonia Elettronica e Radio SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telettra Telefonia Elettronica e Radio SpA, Telettra Laboratori di Telefonia Elettronica e Radio SpA filed Critical Telettra Telefonia Elettronica e Radio SpA
Publication of ES551302A0 publication Critical patent/ES551302A0/es
Publication of ES8800788A1 publication Critical patent/ES8800788A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4821—Bridge structure with air gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes
    • H01L29/475—Schottky barrier electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/142—Semiconductor-metal-semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
ES551302A 1985-01-28 1986-01-28 Transistor con efecto de campo por barrera schottky metal-semiconductor (mesfet) Expired ES8800788A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT19262/85A IT1184723B (it) 1985-01-28 1985-01-28 Transistore mesfet con strato d'aria tra le connessioni dell'elettrodo di gate al supporto e relativo procedimento difabbricazione

Publications (2)

Publication Number Publication Date
ES551302A0 true ES551302A0 (es) 1987-11-16
ES8800788A1 ES8800788A1 (es) 1987-11-16

Family

ID=11156212

Family Applications (2)

Application Number Title Priority Date Filing Date
ES551302A Expired ES8800788A1 (es) 1985-01-28 1986-01-28 Transistor con efecto de campo por barrera schottky metal-semiconductor (mesfet)
ES557632A Expired ES8801062A1 (es) 1985-01-28 1987-07-16 Procedimiento para la fabricacion de transistores con efecto de campo por barrera schotky metal-semiconductor (mesfet)

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES557632A Expired ES8801062A1 (es) 1985-01-28 1987-07-16 Procedimiento para la fabricacion de transistores con efecto de campo por barrera schotky metal-semiconductor (mesfet)

Country Status (6)

Country Link
US (2) US4807002A (es)
EP (1) EP0203225A3 (es)
JP (1) JP2543849B2 (es)
CA (1) CA1266132A (es)
ES (2) ES8800788A1 (es)
IT (1) IT1184723B (es)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5191402A (en) * 1986-10-27 1993-03-02 Seiko Epson Corporation Semiconductor device having an inter-layer insulating film disposed between two wiring layers
US5612557A (en) * 1986-10-27 1997-03-18 Seiko Epson Corporation Semiconductor device having an inter-layer insulating film disposed between two wiring layers
KR920007787B1 (ko) * 1987-06-09 1992-09-17 세이꼬 엡슨 가부시끼가이샤 반도체 장치 및 그 제조방법
JPS6481343A (en) * 1987-09-24 1989-03-27 Nec Corp Manufacture of integrated circuit
FR2633454B1 (fr) * 1988-06-24 1992-01-17 Thomson Hybrides Microondes Dispositif d'accrochage de poutre sur un composant semiconducteur et son procede de fabrication
US5164339A (en) * 1988-09-30 1992-11-17 Siemens-Bendix Automotive Electronics L.P. Fabrication of oxynitride frontside microstructures
JPH0355852A (ja) * 1989-07-25 1991-03-11 Sony Corp 半導体装置の製造方法
JPH0824133B2 (ja) * 1989-08-31 1996-03-06 三菱電機株式会社 半導体装置及びその製造方法
US5019877A (en) * 1989-08-31 1991-05-28 Mitsubishi Denki Kabushiki Kaisha Field effect transistor
JP2856778B2 (ja) * 1989-09-07 1999-02-10 株式会社東芝 半導体装置の配線構造
JPH088306B2 (ja) * 1990-03-07 1996-01-29 株式会社東芝 半導体装置
US5145438A (en) * 1991-07-15 1992-09-08 Xerox Corporation Method of manufacturing a planar microelectronic device
JP3019884B2 (ja) * 1991-09-05 2000-03-13 松下電器産業株式会社 半導体装置およびその製造方法
US5345999A (en) * 1993-03-17 1994-09-13 Applied Materials, Inc. Method and apparatus for cooling semiconductor wafers
US5461003A (en) * 1994-05-27 1995-10-24 Texas Instruments Incorporated Multilevel interconnect structure with air gaps formed between metal leads
JP3359780B2 (ja) * 1995-04-12 2002-12-24 三菱電機株式会社 配線装置
JPH09298295A (ja) * 1996-05-02 1997-11-18 Honda Motor Co Ltd 高電子移動度トランジスタ及びその製造方法
JP3499103B2 (ja) * 1997-02-21 2004-02-23 三菱電機株式会社 半導体装置
US5856217A (en) * 1997-04-10 1999-01-05 Hughes Electronics Corporation Modulation-doped field-effect transistors and fabrication processes
US6201283B1 (en) * 1999-09-08 2001-03-13 Trw Inc. Field effect transistor with double sided airbridge
US7081470B2 (en) * 2001-01-31 2006-07-25 H. Lundbeck A/S Use of GALR3 receptor antagonists for the treatment of depression and/or anxiety and compounds useful in such methods
JP2010205837A (ja) * 2009-03-02 2010-09-16 Mitsubishi Electric Corp 電界効果型トランジスタ及びその製造方法
JP5716737B2 (ja) * 2010-03-01 2015-05-13 富士通株式会社 化合物半導体装置及びその製造方法
JP2013182992A (ja) * 2012-03-01 2013-09-12 Toshiba Corp 半導体装置
JP2013183062A (ja) * 2012-03-02 2013-09-12 Toshiba Corp 半導体装置
CN105633144B (zh) * 2015-06-26 2019-09-24 苏州能讯高能半导体有限公司 一种半导体器件及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3647585A (en) * 1969-05-23 1972-03-07 Bell Telephone Labor Inc Method of eliminating pinhole shorts in an air-isolated crossover
US3925880A (en) * 1971-04-29 1975-12-16 Signetics Corp Semiconductor assembly with beam lead construction and method
US3737743A (en) * 1971-12-23 1973-06-05 Gen Electric High power microwave field effect transistor
CA1027257A (en) * 1974-10-29 1978-02-28 James A. Benjamin Overlay metallization field effect transistor
US4054484A (en) * 1975-10-23 1977-10-18 Bell Telephone Laboratories, Incorporated Method of forming crossover connections
US4213840A (en) * 1978-11-13 1980-07-22 Avantek, Inc. Low-resistance, fine-line semiconductor device and the method for its manufacture
JPS56133876A (en) * 1980-03-24 1981-10-20 Nippon Telegr & Teleph Corp <Ntt> Manufacture of junction type field effect semiconductor device
JPS5726471A (en) * 1980-07-24 1982-02-12 Fujitsu Ltd Semiconductor device
JPS57132367A (en) * 1981-02-09 1982-08-16 Nippon Telegr & Teleph Corp <Ntt> Manufacture of schottky barrier gate type field-effect transistor
JPS5892277A (ja) * 1981-11-28 1983-06-01 Mitsubishi Electric Corp 電界効果トランジスタの製造方法
JPS5976437A (ja) * 1982-10-26 1984-05-01 Fujitsu Ltd 半導体装置
JPS6180869A (ja) * 1984-09-27 1986-04-24 Nec Corp 半導体装置の製造方法
JPS62115877A (ja) * 1985-11-15 1987-05-27 Fujitsu Ltd 接合型電界効果トランジスタ、およびその製造方法

Also Published As

Publication number Publication date
EP0203225A3 (en) 1987-05-13
ES8801062A1 (es) 1987-12-01
CA1266132A (en) 1990-02-20
JPS61181170A (ja) 1986-08-13
IT8519262A0 (it) 1985-01-28
JP2543849B2 (ja) 1996-10-16
US4871687A (en) 1989-10-03
IT1184723B (it) 1987-10-28
ES557632A0 (es) 1987-12-01
US4807002A (en) 1989-02-21
EP0203225A2 (en) 1986-12-03
ES8800788A1 (es) 1987-11-16

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