JPS57132367A - Manufacture of schottky barrier gate type field-effect transistor - Google Patents

Manufacture of schottky barrier gate type field-effect transistor

Info

Publication number
JPS57132367A
JPS57132367A JP1792581A JP1792581A JPS57132367A JP S57132367 A JPS57132367 A JP S57132367A JP 1792581 A JP1792581 A JP 1792581A JP 1792581 A JP1792581 A JP 1792581A JP S57132367 A JPS57132367 A JP S57132367A
Authority
JP
Japan
Prior art keywords
layer
metal
rectilinear
manufacture
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1792581A
Other languages
Japanese (ja)
Other versions
JPS6214109B2 (en
Inventor
Yasunobu Ishii
Masao Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP1792581A priority Critical patent/JPS57132367A/en
Publication of JPS57132367A publication Critical patent/JPS57132367A/en
Publication of JPS6214109B2 publication Critical patent/JPS6214109B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To enable to simplify the manufacture of a highly accurate transistor by a method wherein a rectangle-sectioned insulating layer is formed on a semiconductor layer, and a metal layer is deposited on the above diagonally from the upper direction usig a rectilinear coating method. CONSTITUTION:An N type semiconductor layer 11 is formed on a semiinsulating substrate 10, and on this layer 11, the rectangle-sectioned insulating layer 13 is formed in such a manner that the layer 11 will be divided into two parts of regions 14 and 15 when looked at from above. Then, a metal layer 16 is formed on the region 14 and a metal layer 17 is formed on the region 15 by coating the metal which will have ohmic contact with the layer 11 using a rectilinear deposition process to be applied from above. Subsequently, after insulating films 19 and 20 have been formed, using a rectilinear depositing method, in such a manner that they are covering the layers 16 and 17, metal layers 21 and 23 are formed by depositing the metal which is Schottky-contacted to the layer 11, on layers 19 and 20 using the rectilinear depositing method.
JP1792581A 1981-02-09 1981-02-09 Manufacture of schottky barrier gate type field-effect transistor Granted JPS57132367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1792581A JPS57132367A (en) 1981-02-09 1981-02-09 Manufacture of schottky barrier gate type field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1792581A JPS57132367A (en) 1981-02-09 1981-02-09 Manufacture of schottky barrier gate type field-effect transistor

Publications (2)

Publication Number Publication Date
JPS57132367A true JPS57132367A (en) 1982-08-16
JPS6214109B2 JPS6214109B2 (en) 1987-03-31

Family

ID=11957338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1792581A Granted JPS57132367A (en) 1981-02-09 1981-02-09 Manufacture of schottky barrier gate type field-effect transistor

Country Status (1)

Country Link
JP (1) JPS57132367A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0203225A2 (en) * 1985-01-28 1986-12-03 TELETTRA Telefonia Elettronica e Radio S.p.A. MESFET transistor with air layer between the connections of the gate electrode and the substrate and the respective fabrication process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0203225A2 (en) * 1985-01-28 1986-12-03 TELETTRA Telefonia Elettronica e Radio S.p.A. MESFET transistor with air layer between the connections of the gate electrode and the substrate and the respective fabrication process

Also Published As

Publication number Publication date
JPS6214109B2 (en) 1987-03-31

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