ES527158A0 - Un aparato para fabricar dispositivos fotovoltaicos del tipo que incluyen una pluralidad de peliculas - Google Patents

Un aparato para fabricar dispositivos fotovoltaicos del tipo que incluyen una pluralidad de peliculas

Info

Publication number
ES527158A0
ES527158A0 ES527158A ES527158A ES527158A0 ES 527158 A0 ES527158 A0 ES 527158A0 ES 527158 A ES527158 A ES 527158A ES 527158 A ES527158 A ES 527158A ES 527158 A0 ES527158 A0 ES 527158A0
Authority
ES
Spain
Prior art keywords
films
type including
photovoltaic devices
manufacture photovoltaic
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES527158A
Other languages
English (en)
Spanish (es)
Other versions
ES8600572A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES8600572A1 publication Critical patent/ES8600572A1/es
Publication of ES527158A0 publication Critical patent/ES527158A0/es
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3325—Problems associated with coating large area
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
ES527158A 1982-11-12 1983-11-10 Un aparato para fabricar dispositivos fotovoltaicos del tipo que incluyen una pluralidad de peliculas Granted ES527158A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/441,280 US4515107A (en) 1982-11-12 1982-11-12 Apparatus for the manufacture of photovoltaic devices

Publications (2)

Publication Number Publication Date
ES8600572A1 ES8600572A1 (es) 1985-10-01
ES527158A0 true ES527158A0 (es) 1985-10-01

Family

ID=23752267

Family Applications (1)

Application Number Title Priority Date Filing Date
ES527158A Granted ES527158A0 (es) 1982-11-12 1983-11-10 Un aparato para fabricar dispositivos fotovoltaicos del tipo que incluyen una pluralidad de peliculas

Country Status (10)

Country Link
US (1) US4515107A (en:Method)
EP (1) EP0109808B1 (en:Method)
JP (1) JPH0614513B2 (en:Method)
KR (1) KR910006675B1 (en:Method)
AU (1) AU560939B2 (en:Method)
BR (1) BR8306207A (en:Method)
CA (1) CA1212169A (en:Method)
DE (1) DE3373684D1 (en:Method)
ES (1) ES527158A0 (en:Method)
IN (1) IN165522B (en:Method)

Families Citing this family (77)

* Cited by examiner, † Cited by third party
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FR2550007A1 (en) * 1983-07-29 1985-02-01 Sanyo Electric Co Method for producing a semiconducting film and photovoltaic device obtained by the method
US4619729A (en) * 1984-02-14 1986-10-28 Energy Conversion Devices, Inc. Microwave method of making semiconductor members
JPH0766911B2 (ja) * 1985-11-18 1995-07-19 株式会社半導体エネルギー研究所 被膜形成方法
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
JP2654433B2 (ja) * 1985-11-12 1997-09-17 株式会社 半導体エネルギー研究所 珪素半導体作製方法
DE3427057A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
US4566403A (en) * 1985-01-30 1986-01-28 Sovonics Solar Systems Apparatus for microwave glow discharge deposition
US6113701A (en) 1985-02-14 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US4664939A (en) * 1985-04-01 1987-05-12 Energy Conversion Devices, Inc. Vertical semiconductor processor
JPH0817159B2 (ja) * 1985-08-15 1996-02-21 キヤノン株式会社 堆積膜の形成方法
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6673722B1 (en) 1985-10-14 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US4837048A (en) * 1985-10-24 1989-06-06 Canon Kabushiki Kaisha Method for forming a deposited film
KR910003169B1 (ko) * 1985-11-12 1991-05-20 가부시끼가이샤 한도다이 에네르기 겐뀨소 반도체 장치 제조 방법 및 장치
JPH0645885B2 (ja) * 1985-12-16 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH0645888B2 (ja) * 1985-12-17 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH0645890B2 (ja) * 1985-12-18 1994-06-15 キヤノン株式会社 堆積膜形成法
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US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
JPH0651906B2 (ja) * 1985-12-25 1994-07-06 キヤノン株式会社 堆積膜形成法
JPH0746729B2 (ja) * 1985-12-26 1995-05-17 キヤノン株式会社 薄膜トランジスタの製造方法
JPH0770486B2 (ja) * 1985-12-26 1995-07-31 キヤノン株式会社 光起電力素子の連続製造装置
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US5114770A (en) * 1989-06-28 1992-05-19 Canon Kabushiki Kaisha Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method
EP0406690B1 (en) * 1989-06-28 1997-03-12 Canon Kabushiki Kaisha Process for continuously forming a large area functional deposited film by microwave PCVD method and an apparatus suitable for practicing the same
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Also Published As

Publication number Publication date
JPH0614513B2 (ja) 1994-02-23
EP0109808A3 (en) 1984-07-11
ES8600572A1 (es) 1985-10-01
KR910006675B1 (ko) 1991-08-30
CA1212169A (en) 1986-09-30
DE3373684D1 (en) 1987-10-22
AU560939B2 (en) 1987-04-30
JPS59100516A (ja) 1984-06-09
IN165522B (en:Method) 1989-11-04
EP0109808B1 (en) 1987-09-16
US4515107A (en) 1985-05-07
KR840006726A (ko) 1984-12-01
AU2107583A (en) 1984-05-17
BR8306207A (pt) 1984-06-19
EP0109808A2 (en) 1984-05-30

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