ES525515A0 - Procedimiento para fabricar un dispositivo optico - Google Patents

Procedimiento para fabricar un dispositivo optico

Info

Publication number
ES525515A0
ES525515A0 ES525515A ES525515A ES525515A0 ES 525515 A0 ES525515 A0 ES 525515A0 ES 525515 A ES525515 A ES 525515A ES 525515 A ES525515 A ES 525515A ES 525515 A0 ES525515 A0 ES 525515A0
Authority
ES
Spain
Prior art keywords
procedure
manufacture
optical device
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES525515A
Other languages
English (en)
Other versions
ES8405999A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES525515A0 publication Critical patent/ES525515A0/es
Publication of ES8405999A1 publication Critical patent/ES8405999A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/465—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/14—Etching locally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H01L21/30635—Electrolytic etching of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
ES525515A 1982-09-10 1983-09-08 Procedimiento para fabricar un dispositivo optico Expired ES8405999A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/416,473 US4415414A (en) 1982-09-10 1982-09-10 Etching of optical surfaces

Publications (2)

Publication Number Publication Date
ES525515A0 true ES525515A0 (es) 1984-07-01
ES8405999A1 ES8405999A1 (es) 1984-07-01

Family

ID=23650120

Family Applications (1)

Application Number Title Priority Date Filing Date
ES525515A Expired ES8405999A1 (es) 1982-09-10 1983-09-08 Procedimiento para fabricar un dispositivo optico

Country Status (6)

Country Link
US (1) US4415414A (es)
EP (1) EP0103443B1 (es)
JP (1) JPS5972141A (es)
CA (1) CA1232568A (es)
DE (1) DE3378712D1 (es)
ES (1) ES8405999A1 (es)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4689125A (en) * 1982-09-10 1987-08-25 American Telephone & Telegraph Co., At&T Bell Labs Fabrication of cleaved semiconductor lasers
US4482443A (en) * 1983-12-30 1984-11-13 At&T Technologies Photoelectrochemical etching of n-type silicon
US4608138A (en) * 1984-02-16 1986-08-26 Mitsubishi Denki Kabushiki Kaisha Electrolytic method and apparatus
US4559116A (en) * 1984-07-09 1985-12-17 Minnesota Mining And Manufacturing Company Process of etching semiconductor electrodes
US4700210A (en) * 1984-11-21 1987-10-13 American Telephone And Telegraph Company, At&T Bell Laboratories Asymmetric chip design for LEDS
GB8429701D0 (en) * 1984-11-23 1985-01-03 British Telecomm Integrated optoelectronic devices
US4622114A (en) * 1984-12-20 1986-11-11 At&T Bell Laboratories Process of producing devices with photoelectrochemically produced gratings
US4613417A (en) * 1984-12-28 1986-09-23 At&T Bell Laboratories Semiconductor etching process
GB2181567B (en) * 1985-07-04 1989-01-11 Plessey Co Plc Infra-red fresnel lenses and methods of fabrication
GB2203892A (en) * 1987-04-24 1988-10-26 Philips Electronic Associated A method of etching a semiconductor body
AU614644B2 (en) * 1988-07-18 1991-09-05 Unisearch Limited Sculpted solar cell structures
US5053106A (en) * 1988-10-12 1991-10-01 Occidental Chemical Corporation Low friction, wear resistant plastic parts
CA2006597A1 (en) * 1988-12-26 1990-06-26 Kazuo Kogure Method for manufacturing compound semiconductor devices and a compound semiconductor device
JPH03270853A (ja) * 1990-03-20 1991-12-03 Toyo A Tec Kk 工具折損検知装置
JPH055349U (ja) * 1991-07-04 1993-01-26 三井精機工業株式会社 横型多軸ヘツド用刃具検査装置
US5277769A (en) * 1991-11-27 1994-01-11 The United States Of America As Represented By The Department Of Energy Electrochemical thinning of silicon
US5238530A (en) * 1992-04-20 1993-08-24 Texas Instruments Incorporated Anisotropic titanate etch
US5238529A (en) * 1992-04-20 1993-08-24 Texas Instruments Incorporated Anisotropic metal oxide etch
US5312516A (en) * 1992-04-20 1994-05-17 Texas Instruments Incorporated Anisotropic tantalum pentoxide etch
US5374330A (en) * 1992-04-20 1994-12-20 Texas Instruments Incorporated Anisotropic barium strontium titanate etch
US5338415A (en) * 1992-06-22 1994-08-16 The Regents Of The University Of California Method for detection of chemicals by reversible quenching of silicon photoluminescence
US5279702A (en) * 1992-09-30 1994-01-18 Texas Instruments Incorporated Anisotropic liquid phase photochemical copper etch
US5418114A (en) * 1992-09-30 1995-05-23 Texas Instruments Incorporated Anisotropic liquid phase photochemical mercury cadmium telluride etch
US5348627A (en) * 1993-05-12 1994-09-20 Georgia Tech Reserach Corporation Process and system for the photoelectrochemical etching of silicon in an anhydrous environment
AU6938598A (en) * 1997-03-27 1998-10-22 Corning Incorporated Surface figuring of optical surfaces of silicon carbide by photoelectrochemical etching
US6074546A (en) * 1997-08-21 2000-06-13 Rodel Holdings, Inc. Method for photoelectrochemical polishing of silicon wafers
WO2003023839A1 (en) * 2001-09-12 2003-03-20 Mass Consortium Corporation High throughput chemical analysis by improved desorption/ionization on silicon mass spectrometry
WO2007024019A1 (en) * 2005-08-26 2007-03-01 Matsushita Electric Works, Ltd. Process of making a semiconductor optical lens and a semiconductor optical lens fabricated thereby
EP1952109A1 (en) * 2005-11-25 2008-08-06 Matsushita Electric Works, Ltd. Infrared detection unit using a semiconductor optical lens
TWI419356B (zh) * 2008-03-05 2013-12-11 Univ Nat Taiwan 週期性結構之製作方法及發光元件之製作方法
CN103743613B (zh) * 2014-01-20 2015-11-11 厦门大学 一种光学元件刻蚀装置
KR101969401B1 (ko) * 2017-06-05 2019-04-16 아주대학교산학협력단 식각액 및 이를 이용하는 반도체 소자의 제조 방법

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3041258A (en) * 1960-06-24 1962-06-26 Thomas V Sikina Method of etching and etching solution for use therewith
US3728236A (en) * 1971-08-05 1973-04-17 Rca Corp Method of making semiconductor devices mounted on a heat sink
GB1448600A (en) * 1973-12-06 1976-09-08 Standard Telephones Cables Ltd Semiconductor etching
US3954523A (en) * 1975-04-14 1976-05-04 International Business Machines Corporation Process for fabricating devices having dielectric isolation utilizing anodic treatment and selective oxidation
US4283259A (en) * 1979-05-08 1981-08-11 International Business Machines Corporation Method for maskless chemical and electrochemical machining
US4351706A (en) * 1980-03-27 1982-09-28 International Business Machines Corporation Electrochemically eroding semiconductor device
JPS57141919A (en) * 1981-02-26 1982-09-02 Fujitsu Ltd Manufacture of semiconductor device
US4389291A (en) * 1981-06-19 1983-06-21 Bell Telephone Laboratories, Incorporated Photoelectrochemical processing of InP-type devices

Also Published As

Publication number Publication date
DE3378712D1 (en) 1989-01-19
CA1232568A (en) 1988-02-09
EP0103443A2 (en) 1984-03-21
US4415414A (en) 1983-11-15
JPS5972141A (ja) 1984-04-24
EP0103443A3 (en) 1985-01-09
JPH0227812B2 (es) 1990-06-20
EP0103443B1 (en) 1988-12-14
ES8405999A1 (es) 1984-07-01

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20041102