GB1448600A - Semiconductor etching - Google Patents

Semiconductor etching

Info

Publication number
GB1448600A
GB1448600A GB5651773A GB5651773A GB1448600A GB 1448600 A GB1448600 A GB 1448600A GB 5651773 A GB5651773 A GB 5651773A GB 5651773 A GB5651773 A GB 5651773A GB 1448600 A GB1448600 A GB 1448600A
Authority
GB
United Kingdom
Prior art keywords
semi
etching
conductor
layer
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5651773A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB5651773A priority Critical patent/GB1448600A/en
Publication of GB1448600A publication Critical patent/GB1448600A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H01L21/30635—Electrolytic etching of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)

Abstract

1448600 Semi-conductor device manufacture STANDARD TELEPHONES & CABLES Ltd 6 Dec 1973 56517/73 Heading H1K A method of etching an N-type layer 11, Fig. 1, of a semi-conductor body to expose underlying P-type material 13 includes exposing the etching face to intensity-modulated light during a chemical etching process in an electrolytic cell and monitoring current through the cell, the voltage applied to the cell being less than the band gap of the semi-conductor. The method is used to fabricate a GaAs photocathode, P-type substrate 12 being first electrochemically etched to expose the layer 11 and form a supporting rim 16 (Fig. 2, not shown). Layer 11 is then chemically etched in a bubble chamber, Fig. 3, a lamp 43 providing pulsating illumination at 1 Hertz to generate electron-hole pairs at the etching face. A decrease in fluctuations in the current flowing between the semi-conductor body as anode and a cathode 46, as measured by a recorder 49, signifies that the P-type material is exposed and etching is terminated. The bubble chamber may be temperature-stabilized by a water jacket 40, bubble action being provided by nitrogen gas via porous plug 41. The etchant 39 is a mixture of H 2 SO 4 and H 2 O 2 .
GB5651773A 1973-12-06 1973-12-06 Semiconductor etching Expired GB1448600A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB5651773A GB1448600A (en) 1973-12-06 1973-12-06 Semiconductor etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB5651773A GB1448600A (en) 1973-12-06 1973-12-06 Semiconductor etching

Publications (1)

Publication Number Publication Date
GB1448600A true GB1448600A (en) 1976-09-08

Family

ID=10476824

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5651773A Expired GB1448600A (en) 1973-12-06 1973-12-06 Semiconductor etching

Country Status (1)

Country Link
GB (1) GB1448600A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2429492A1 (en) * 1978-06-20 1980-01-18 Matsushita Electric Ind Co Ltd METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTORS BY ANODIC OXIDATION
EP0103443A2 (en) * 1982-09-10 1984-03-21 Western Electric Company, Incorporated Process for fabricating an optical device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2429492A1 (en) * 1978-06-20 1980-01-18 Matsushita Electric Ind Co Ltd METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTORS BY ANODIC OXIDATION
EP0103443A2 (en) * 1982-09-10 1984-03-21 Western Electric Company, Incorporated Process for fabricating an optical device
EP0103443A3 (en) * 1982-09-10 1985-01-09 Western Electric Company, Incorporated Process for fabricating an optical device

Similar Documents

Publication Publication Date Title
US4092445A (en) Process for forming porous semiconductor region using electrolyte without electrical source
US4414066A (en) Electrochemical photoetching of compound semiconductors
US3977018A (en) Passivation of mercury cadmium telluride semiconductor surfaces by anodic oxidation
JPS55102282A (en) Light emitting diode and method of fabricating the same
ES401785A1 (en) Method for producing electrical energy with consumable aluminum anode
US3271198A (en) Electrolytic semiconductor photocell
GB1448600A (en) Semiconductor etching
JPS51123779A (en) A hydrogen-oxygen drawing method using electrochemical photoelectric c ells
US3901745A (en) Gallium arsenide photocathode
FR2372247A2 (en) METHOD AND DEVICE FOR PHOTOELECTROLYSIS OF WATER BY SOLAR RADIATION
US4689125A (en) Fabrication of cleaved semiconductor lasers
Green et al. An Improved Method for the Electrochemical C‐V Profiling of Indium Phosphide
US3527682A (en) Process for electrolytically etching indium antimonide
US3419480A (en) Anodic oxidation
GB1431231A (en) Method of growing oxide layers on ii-v semiconductor compounds
JPS572519A (en) Manufacture of semiconductor device
JPS57192088A (en) Manufacture of light emitting diode
JPS5323869A (en) Hydrogen-generating apparatus by photoelectric conversion
JPS56103473A (en) Semiconductor device
GB1535061A (en) Gallium arsenide photocathode
Thrush A method for selective substrate removal from thin p-type gallium arsenide layers
SU823463A1 (en) Method of producing potassium peroxoborate
JPS54100666A (en) Selective anode oxidation method
JPS5443472A (en) Manufacture of semiconductor device
IE52185B1 (en) Fabricating integrated circuits

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee