GB1448600A - Semiconductor etching - Google Patents
Semiconductor etchingInfo
- Publication number
- GB1448600A GB1448600A GB5651773A GB5651773A GB1448600A GB 1448600 A GB1448600 A GB 1448600A GB 5651773 A GB5651773 A GB 5651773A GB 5651773 A GB5651773 A GB 5651773A GB 1448600 A GB1448600 A GB 1448600A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- etching
- conductor
- layer
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 title abstract 5
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000003486 chemical etching Methods 0.000 abstract 1
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 1
- 238000005286 illumination Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 238000012544 monitoring process Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3063—Electrolytic etching
- H01L21/30635—Electrolytic etching of AIIIBV compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
1448600 Semi-conductor device manufacture STANDARD TELEPHONES & CABLES Ltd 6 Dec 1973 56517/73 Heading H1K A method of etching an N-type layer 11, Fig. 1, of a semi-conductor body to expose underlying P-type material 13 includes exposing the etching face to intensity-modulated light during a chemical etching process in an electrolytic cell and monitoring current through the cell, the voltage applied to the cell being less than the band gap of the semi-conductor. The method is used to fabricate a GaAs photocathode, P-type substrate 12 being first electrochemically etched to expose the layer 11 and form a supporting rim 16 (Fig. 2, not shown). Layer 11 is then chemically etched in a bubble chamber, Fig. 3, a lamp 43 providing pulsating illumination at 1 Hertz to generate electron-hole pairs at the etching face. A decrease in fluctuations in the current flowing between the semi-conductor body as anode and a cathode 46, as measured by a recorder 49, signifies that the P-type material is exposed and etching is terminated. The bubble chamber may be temperature-stabilized by a water jacket 40, bubble action being provided by nitrogen gas via porous plug 41. The etchant 39 is a mixture of H 2 SO 4 and H 2 O 2 .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5651773A GB1448600A (en) | 1973-12-06 | 1973-12-06 | Semiconductor etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB5651773A GB1448600A (en) | 1973-12-06 | 1973-12-06 | Semiconductor etching |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1448600A true GB1448600A (en) | 1976-09-08 |
Family
ID=10476824
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB5651773A Expired GB1448600A (en) | 1973-12-06 | 1973-12-06 | Semiconductor etching |
Country Status (1)
Country | Link |
---|---|
GB (1) | GB1448600A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2429492A1 (en) * | 1978-06-20 | 1980-01-18 | Matsushita Electric Ind Co Ltd | METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTORS BY ANODIC OXIDATION |
EP0103443A2 (en) * | 1982-09-10 | 1984-03-21 | Western Electric Company, Incorporated | Process for fabricating an optical device |
-
1973
- 1973-12-06 GB GB5651773A patent/GB1448600A/en not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2429492A1 (en) * | 1978-06-20 | 1980-01-18 | Matsushita Electric Ind Co Ltd | METHOD AND DEVICE FOR MANUFACTURING SEMICONDUCTORS BY ANODIC OXIDATION |
EP0103443A2 (en) * | 1982-09-10 | 1984-03-21 | Western Electric Company, Incorporated | Process for fabricating an optical device |
EP0103443A3 (en) * | 1982-09-10 | 1985-01-09 | Western Electric Company, Incorporated | Process for fabricating an optical device |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |