KR840006726A - 광전장치 제조장치 및 증착용 어셈블리 - Google Patents

광전장치 제조장치 및 증착용 어셈블리 Download PDF

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KR840006726A
KR840006726A KR1019830005345A KR830005345A KR840006726A KR 840006726 A KR840006726 A KR 840006726A KR 1019830005345 A KR1019830005345 A KR 1019830005345A KR 830005345 A KR830005345 A KR 830005345A KR 840006726 A KR840006726 A KR 840006726A
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deposition
microwave energy
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deposition chambers
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포니어 유진 (외 1)
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원본미기재
에너지 컨버젼 디바이스 인코포레티드
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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    • H01J2237/3325—Problems associated with coating large area
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    • Y02E10/00—Energy generation through renewable energy sources
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract

내용없음

Description

광전장치 제조장치 및 증착용 어셈블리
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 다수의 p-i-n형 셀을 포함하는 텐뎀형(tendem) 혹은 종속형 광전장치에 대한 부분적 단면도.
제2도는 광전장치의 연속적인 제조에 이용되는 다중 글로우 방전실 증착 시스템에 대한 선도,
제3도는 부분적으로 절단된 마이크로파 글로우 방전증착 어셈블리에 대한 투시도.

Claims (15)

  1. 기판상에 증착된 다수의 반도체 물질층을 포함하는 형태의 광전장치의 제조장치로서, 상기 기판이 각각의 증착실(28), (30), (32)를 통과하여 진행될 때 상기 각각의 증착실(28), (30), (32)이 상기 기판(11)상에 반도체 물질로 구성된 반도체 물질층(16a), (16b), (16c), (18a), (18b), (18c), (20a), (20b), (20c) 가운데 하나를 각각 증착시키도록 배치되는 다수의 증착실(28), (30), (32)과, 마이크로파 에너지원(38)과 상기 마이크로파 에너지를 하나 이상의 상기 증착실에 결합시키는 결합 수단(64), (90), (110)과, 상기 하나 이상의 증착실 내에서 마이크로파 에너지에 의해 활성화된 글로우방전으로 인한 플라스마를 이용하여 상기 반도체 물질층을 상기 기판상에 증착시키기 위하여 상기 하나 이상의 증착실내에 마이크로파 에너지에 의한 글로우방전식 플라스마를 형성하는 상기 하나 이상의 증착실내에 하나 이상의 반도체 함유 혼합물을 내포하는 반응기체 이입수단(36)을 구비하는 것을 특징으로 하는 광전장치 제조장치.
  2. 제1항에 있어서, 기판물질 구성원(11a)과, 상기 기판물질을 상기 증착실(28), (30), (32)을 통하여 연속적으로 진행시키는 수단(11b)을 구비하는 것을 특징으로 하는 광전장치 제조장치.
  3. 제1항에 있어서, 상기 결합수단은 상기 하나이상의 증착실(28), (30), (32)내에 포함된 안테나(64), (90), (110)를 구비하는 것을 특징으로 하는 광전장치 제조장치.
  4. 제3항에 있어서, 상기 안테나(64), (90), (110)는 상기 하나이의 증착실(28), (30), (32)내에 마이크로파 에너지에 의해 활성화되는 글로우 방전식의 무형 플라스마 형성수단(100), (120), (122)을 구비하는 것을 특징으로 하는 광전장치 제조장치.
  5. 제4항에 있어서, 상기 안테나(64), (90), (110)는 전도성 물질로 형성된 외부 의장(92), (112)과, 상기 외부 외장 내에 있으면서 상기 외부 외장으로부터 전기적으로 삽입되는 내부 도체 (94), (114)와 상기 외부 외장내의 슬로트(100), (120), (122)를 구비하는 것을 특징으로 광전장치 제조장치.
  6. 제1항에 있어서, 상기 각각의 증착실(28), (30), (32)에 마이크로파 에너지를 결합시키는 수단(64), (90), (110)과 상기 각각의 증착실 내에서 마이크로파 에너지에 의해 활성화되는 글로우 방전식 플라스마를 이용하여 상기 기판(11)상에 반도체 물질층(16a), (16b), (16c), (18a), (18b), (18c), (20a), (20b), (20c)을 증착시키는 상기 각각의 증착실(28), (30), (32)을 구비하는 것을 특징으로 하는 광전장치 제조장치.
  7. 마이크로파 에너지에 의해 활성화되는 플라스마를 이용하여 기판상에 증착물질을 증착시키는 어셈블리로서, 증착실(28), (30), (32)과, 마이크로파 에너지원(38)과, 전도성 물질로 형성된 외부 외장(92), (112)과 상기 외부 외장 내에서 연장되고 이 외장으로부터 전기적으로 삽입되는 내부 도체(94), (114)와 상기 외부 의장내의 슬로트(100), (120), (122)를 포함하는 안테나로서 상기 증착실 내로 연장되고 상기 마이크로파 에너지원에 결합되는 안테나(64), (90), (110)를 구비하는 것을 특징으로 하는 증착용 어셈블리.
  8. 제1항이나 제7항중 어느 한항에 있어서, 상기 외부 의장(92), (112)은 상기 외부 외장을 따라서 길이 방향으로 연장되는 것을 특징으로 하는 증착용 어셈블리.
  9. 제1항이나 제7항중 어느 한 항에 있어서, 상기 슬로트(100), (120), (122) 폭의 규격은 상기 마이크로파 파장의 길이보다 짧은 것을 특징으로 하는 광전장치 제조장치.
  10. 제1항이나 제7항중 어느 한 항에 있어서, 상기 슬로트(100), (120), (122)는 상기 마이크로파 공급원(38)의 마이크로파 주파수 길이에 대해 약 1/2 파장의 길이를 구비하는 것을 특징으로 증착용 어셈블리.
  11. 제1항이나 제7항에 있어서, 삽입 물질(96), (116)은 상기 외부 외장(92), (112)의 내부를 채우고 상기 내부 도체 (94), (114)와 상기 외부 외경의 내부 표면을 근접하게 접촉하는 것을 특징으로 하는 증착용 어셈블리.
  12. 제1항이나 제7항에 있어서, 냉각 수단(170)은 상기 안테나(64), (90), (110)를 냉각시키는 것을 특징으로 증착용 어셈블리.
  13. 제12항에 있어서, 상기 냉각수단(170)은 상기 안테나 외부 의장(92), (112)과 접촉하는 열전도성 물질로 구성된 수열에 의한 냉각 블록(172)을 구비하는 것을 특징으로 증착용 어셈블리.
  14. 제13항에 있어서, 열 전도 관(178)은 상기 블럭(172)과 접촉하고, 상기 블럭 및 상기 외부 외장(92), (112)을 수열냉각 시키기 위해 열 전도관(178)을 통하여 물을 통과시키는데 사용되는 것을 특징으로 하는 증착용 어셈블리.
  15. 제7항에 있어서, 상기 증착실(28), (30), (32)은 상기 안테나(64), (90), (110)가 통과하여 연장되도록 규격지워진 개구를 구비하여, 상기 어셈블리(50)는 안테나 관통 공급수단(130)을 구비하는데 이 관통공급 수단(130)은 상기 증착실 벽의 개구와 함께 정렬되는 축방향 통로(140)와 환상 플랜지(142) 및 내부 표면을 구비하는 고정부로서 상기 증착실 벽에 고정되도록 이용된 고정부(132)와, 상기 안테나가 통과하도록 통로(140) 및 고리형 부재(144)가 규격지워진 상태에서 상기 플랜지와 대응하고 있는 상기 통로내에 수납되도록 규격지워진 고리형 부재(144)와, 상기 안테나에 대해 진공 봉입관통 공급부를 제공하기 위해 상기 고리형 부재로 하여금 상기 안테나 외장(92), (112)의 외부표면 및 상기 통로의 내부표면과 함께 맞물려 내의 방향으로 봉입되도록 고리형 부재 어 압력을 가하는 압력 인가수단(148), (156)을 구비하는 것을 특징으로 하는 증착용 어셈블리.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830005345A 1982-11-12 1983-11-11 광전장치제조장치및증착용어셈블리 KR910006675B1 (ko)

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US441,280 1982-11-12
US441280 1982-11-12
US06/441,280 US4515107A (en) 1982-11-12 1982-11-12 Apparatus for the manufacture of photovoltaic devices

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JPH0614513B2 (ja) 1994-02-23
IN165522B (ko) 1989-11-04
BR8306207A (pt) 1984-06-19
JPS59100516A (ja) 1984-06-09
EP0109808A2 (en) 1984-05-30
AU2107583A (en) 1984-05-17
US4515107A (en) 1985-05-07
EP0109808B1 (en) 1987-09-16
DE3373684D1 (en) 1987-10-22
ES8600572A1 (es) 1985-10-01
CA1212169A (en) 1986-09-30
AU560939B2 (en) 1987-04-30
EP0109808A3 (en) 1984-07-11
ES527158A0 (es) 1985-10-01
KR910006675B1 (ko) 1991-08-30

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