BR8306207A - Aparelho para a manufatura de dispositivos fotovoltaicos e conjunto para depositar um material sobre um substrato a partir de um plasma excitado por energia de microondas - Google Patents
Aparelho para a manufatura de dispositivos fotovoltaicos e conjunto para depositar um material sobre um substrato a partir de um plasma excitado por energia de microondasInfo
- Publication number
- BR8306207A BR8306207A BR8306207A BR8306207A BR8306207A BR 8306207 A BR8306207 A BR 8306207A BR 8306207 A BR8306207 A BR 8306207A BR 8306207 A BR8306207 A BR 8306207A BR 8306207 A BR8306207 A BR 8306207A
- Authority
- BR
- Brazil
- Prior art keywords
- appliance
- manufacture
- substrate
- assembly
- microwave energy
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3325—Problems associated with coating large area
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/441,280 US4515107A (en) | 1982-11-12 | 1982-11-12 | Apparatus for the manufacture of photovoltaic devices |
Publications (1)
Publication Number | Publication Date |
---|---|
BR8306207A true BR8306207A (pt) | 1984-06-19 |
Family
ID=23752267
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR8306207A BR8306207A (pt) | 1982-11-12 | 1983-11-11 | Aparelho para a manufatura de dispositivos fotovoltaicos e conjunto para depositar um material sobre um substrato a partir de um plasma excitado por energia de microondas |
Country Status (10)
Country | Link |
---|---|
US (1) | US4515107A (pt) |
EP (1) | EP0109808B1 (pt) |
JP (1) | JPH0614513B2 (pt) |
KR (1) | KR910006675B1 (pt) |
AU (1) | AU560939B2 (pt) |
BR (1) | BR8306207A (pt) |
CA (1) | CA1212169A (pt) |
DE (1) | DE3373684D1 (pt) |
ES (1) | ES8600572A1 (pt) |
IN (1) | IN165522B (pt) |
Families Citing this family (75)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2550007A1 (en) * | 1983-07-29 | 1985-02-01 | Sanyo Electric Co | Method for producing a semiconducting film and photovoltaic device obtained by the method |
US4619729A (en) | 1984-02-14 | 1986-10-28 | Energy Conversion Devices, Inc. | Microwave method of making semiconductor members |
JPH0766911B2 (ja) * | 1985-11-18 | 1995-07-19 | 株式会社半導体エネルギー研究所 | 被膜形成方法 |
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
JP2654433B2 (ja) * | 1985-11-12 | 1997-09-17 | 株式会社 半導体エネルギー研究所 | 珪素半導体作製方法 |
DE3427057A1 (de) * | 1984-07-23 | 1986-01-23 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum |
US4566403A (en) * | 1985-01-30 | 1986-01-28 | Sovonics Solar Systems | Apparatus for microwave glow discharge deposition |
US6113701A (en) * | 1985-02-14 | 2000-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
US4664939A (en) * | 1985-04-01 | 1987-05-12 | Energy Conversion Devices, Inc. | Vertical semiconductor processor |
JPH0817159B2 (ja) * | 1985-08-15 | 1996-02-21 | キヤノン株式会社 | 堆積膜の形成方法 |
US6673722B1 (en) | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
US4837048A (en) * | 1985-10-24 | 1989-06-06 | Canon Kabushiki Kaisha | Method for forming a deposited film |
KR910003169B1 (ko) * | 1985-11-12 | 1991-05-20 | 가부시끼가이샤 한도다이 에네르기 겐뀨소 | 반도체 장치 제조 방법 및 장치 |
JPH0645885B2 (ja) * | 1985-12-16 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
JPH0645888B2 (ja) * | 1985-12-17 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
JPH0645890B2 (ja) * | 1985-12-18 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
JPS62142778A (ja) * | 1985-12-18 | 1987-06-26 | Canon Inc | 堆積膜形成法 |
US5160543A (en) * | 1985-12-20 | 1992-11-03 | Canon Kabushiki Kaisha | Device for forming a deposited film |
JPH0770485B2 (ja) * | 1985-12-20 | 1995-07-31 | キヤノン株式会社 | 光起電力素子の連続製造装置 |
JPH0651906B2 (ja) * | 1985-12-25 | 1994-07-06 | キヤノン株式会社 | 堆積膜形成法 |
JPH0770486B2 (ja) * | 1985-12-26 | 1995-07-31 | キヤノン株式会社 | 光起電力素子の連続製造装置 |
JPH0746729B2 (ja) * | 1985-12-26 | 1995-05-17 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
US4834023A (en) * | 1986-12-19 | 1989-05-30 | Canon Kabushiki Kaisha | Apparatus for forming deposited film |
US5130170A (en) * | 1989-06-28 | 1992-07-14 | Canon Kabushiki Kaisha | Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation |
US5114770A (en) * | 1989-06-28 | 1992-05-19 | Canon Kabushiki Kaisha | Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method |
EP0406690B1 (en) * | 1989-06-28 | 1997-03-12 | Canon Kabushiki Kaisha | Process for continuously forming a large area functional deposited film by microwave PCVD method and an apparatus suitable for practicing the same |
JPH05251356A (ja) * | 1991-11-06 | 1993-09-28 | Semiconductor Energy Lab Co Ltd | 被膜形成方法 |
JPH05304096A (ja) * | 1991-11-06 | 1993-11-16 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
US5476798A (en) * | 1992-06-29 | 1995-12-19 | United Solar Systems Corporation | Plasma deposition process with substrate temperature control |
EP0648373B1 (en) * | 1992-06-29 | 2002-01-30 | United Solar Systems Corporation | Microwave energized deposition process with substrate temperature control |
EP0931853B1 (en) * | 1992-11-13 | 2001-12-05 | Energy Conversion Devices, Inc. | Method of depositing barrier coatings by plasma assisted chemical vapour deposition |
FR2702119B1 (fr) * | 1993-02-25 | 1995-07-13 | Metal Process | Dispositif d'excitation d'un plasma à la résonance cyclotronique électronique par l'intermédiaire d'un applicateur filaire d'un champ micro-onde et d'un champ magnétique statique. |
JPH08232070A (ja) * | 1994-12-26 | 1996-09-10 | Canon Inc | 堆積膜形成装置及びそれに用いられる電極 |
US6159300A (en) | 1996-12-17 | 2000-12-12 | Canon Kabushiki Kaisha | Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device |
DE19722272A1 (de) * | 1997-05-28 | 1998-12-03 | Leybold Systems Gmbh | Vorrichtung zur Erzeugung von Plasma |
JP2000192244A (ja) * | 1998-10-16 | 2000-07-11 | Canon Inc | 堆積膜の形成装置及び形成方法 |
JP2003530487A (ja) * | 2000-04-12 | 2003-10-14 | アイクストロン、アーゲー | 少なくとも1つの高周波貫通端子を備えた反応室 |
US20120189846A1 (en) * | 2007-01-03 | 2012-07-26 | Lockheed Martin Corporation | Cnt-infused ceramic fiber materials and process therefor |
US8158217B2 (en) * | 2007-01-03 | 2012-04-17 | Applied Nanostructured Solutions, Llc | CNT-infused fiber and method therefor |
US9005755B2 (en) | 2007-01-03 | 2015-04-14 | Applied Nanostructured Solutions, Llc | CNS-infused carbon nanomaterials and process therefor |
US8951632B2 (en) | 2007-01-03 | 2015-02-10 | Applied Nanostructured Solutions, Llc | CNT-infused carbon fiber materials and process therefor |
US20100279569A1 (en) * | 2007-01-03 | 2010-11-04 | Lockheed Martin Corporation | Cnt-infused glass fiber materials and process therefor |
US8951631B2 (en) | 2007-01-03 | 2015-02-10 | Applied Nanostructured Solutions, Llc | CNT-infused metal fiber materials and process therefor |
US20090081383A1 (en) * | 2007-09-20 | 2009-03-26 | Lockheed Martin Corporation | Carbon Nanotube Infused Composites via Plasma Processing |
US20090081441A1 (en) * | 2007-09-20 | 2009-03-26 | Lockheed Martin Corporation | Fiber Tow Comprising Carbon-Nanotube-Infused Fibers |
CA2750484A1 (en) | 2009-02-17 | 2010-12-16 | Applied Nanostructured Solutions, Llc | Composites comprising carbon nanotubes on fiber |
EP2401416B1 (en) | 2009-02-27 | 2021-03-17 | Applied NanoStructured Solutions, LLC | Low temperature carbon nanotube growth using gas-preheat method |
US20100227134A1 (en) | 2009-03-03 | 2010-09-09 | Lockheed Martin Corporation | Method for the prevention of nanoparticle agglomeration at high temperatures |
AU2010235123A1 (en) * | 2009-04-10 | 2011-10-06 | Applied Nanostructured Solutions Llc | Apparatus and method for the production of carbon nanotubes on a continuously moving substrate |
US20100260998A1 (en) * | 2009-04-10 | 2010-10-14 | Lockheed Martin Corporation | Fiber sizing comprising nanoparticles |
WO2010144183A1 (en) | 2009-04-24 | 2010-12-16 | Lockheed Martin Corporation | Cnt-based signature control material |
US9111658B2 (en) | 2009-04-24 | 2015-08-18 | Applied Nanostructured Solutions, Llc | CNS-shielded wires |
KR101696207B1 (ko) | 2009-04-27 | 2017-01-13 | 어플라이드 나노스트럭처드 솔루션스, 엘엘씨. | 복합 구조물 제빙을 위한 cnt계 저항 가열 |
KR20120005470A (ko) * | 2009-04-30 | 2012-01-16 | 어플라이드 나노스트럭처드 솔루션스, 엘엘씨. | 탄소 나노튜브 합성 방법 및 시스템 |
JP5823393B2 (ja) * | 2009-08-03 | 2015-11-25 | アプライド ナノストラクチャード ソリューションズ リミテッド ライアビリティー カンパニーApplied Nanostructuredsolutions, Llc | 複合繊維へのナノ粒子の組み込み |
EP2496739A4 (en) * | 2009-11-02 | 2014-07-02 | Applied Nanostructured Sols | CNT-FOUNDED ARAMID FIBER MATERIALS AND METHOD THEREFOR |
DE102009044496B4 (de) | 2009-11-11 | 2023-11-02 | Muegge Gmbh | Vorrichtung zur Erzeugung von Plasma mittels Mikrowellen |
WO2011126518A2 (en) | 2009-11-23 | 2011-10-13 | Applied Nanostructured Solutions, Llc | Cnt-tailored composite air-based structures |
KR20120117978A (ko) * | 2009-11-23 | 2012-10-25 | 어플라이드 나노스트럭처드 솔루션스, 엘엘씨. | 카본 나노튜브-주입된 섬유 재료를 포함하는 세라믹 복합재료 및 이의 제조방법 |
EP2513250A4 (en) | 2009-12-14 | 2015-05-27 | Applied Nanostructured Sols | FIRE-RESISTANT COMPOSITE MATERIALS AND ARTICLES WITH CARBON NANOTUBES-INFUNDED FIBER MATERIALS |
US9167736B2 (en) | 2010-01-15 | 2015-10-20 | Applied Nanostructured Solutions, Llc | CNT-infused fiber as a self shielding wire for enhanced power transmission line |
CA2785803A1 (en) | 2010-02-02 | 2011-11-24 | Applied Nanostructured Solutions, Llc | Carbon nanotube-infused fiber materials containing parallel-aligned carbon nanotubes, methods for production thereof, and composite materials derived therefrom |
WO2011109485A1 (en) | 2010-03-02 | 2011-09-09 | Applied Nanostructured Solutions,Llc | Electrical devices containing carbon nanotube-infused fibers and methods for production thereof |
KR101787645B1 (ko) | 2010-03-02 | 2017-10-23 | 어플라이드 나노스트럭처드 솔루션스, 엘엘씨. | 카본 나노튜브-주입된 전극 재료를 포함하는 나선형 권선 전기 장치 및 이의 제조를 위한 방법 및 장치 |
US8780526B2 (en) | 2010-06-15 | 2014-07-15 | Applied Nanostructured Solutions, Llc | Electrical devices containing carbon nanotube-infused fibers and methods for production thereof |
US9017854B2 (en) | 2010-08-30 | 2015-04-28 | Applied Nanostructured Solutions, Llc | Structural energy storage assemblies and methods for production thereof |
AU2011302314A1 (en) | 2010-09-14 | 2013-02-28 | Applied Nanostructured Solutions, Llc | Glass substrates having carbon nanotubes grown thereon and methods for production thereof |
WO2012040004A1 (en) | 2010-09-22 | 2012-03-29 | Applied Nanostructured Solutions, Llc | Carbon fiber substrates having carbon nanotubes grown thereon and processes for production thereof |
CA2782976A1 (en) | 2010-09-23 | 2012-03-29 | Applied Nanostructured Solutions, Llc | Cnt-infused fiber as a self shielding wire for enhanced power transmission line |
US9085464B2 (en) | 2012-03-07 | 2015-07-21 | Applied Nanostructured Solutions, Llc | Resistance measurement system and method of using the same |
US9093599B2 (en) * | 2013-07-26 | 2015-07-28 | First Solar, Inc. | Vapor deposition apparatus for continuous deposition of multiple thin film layers on a substrate |
US11019715B2 (en) * | 2018-07-13 | 2021-05-25 | Mks Instruments, Inc. | Plasma source having a dielectric plasma chamber with improved plasma resistance |
WO2020078557A1 (en) * | 2018-10-18 | 2020-04-23 | Applied Materials, Inc. | Deposition apparatus, system and method for depositing a material on a substrate |
JP7161254B2 (ja) * | 2020-02-28 | 2022-10-26 | 国立大学法人東海国立大学機構 | 加工方法、加工装置およびプログラム |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE863522C (de) * | 1945-04-15 | 1953-01-19 | Telefunken Gmbh | Vorrichtung zur Regelung der Strahlungsdaempfung eines Hohlrohr-schlitzstrahlers |
US3114652A (en) * | 1960-04-15 | 1963-12-17 | Alloyd Corp | Vapor deposition process |
US3471672A (en) * | 1967-04-28 | 1969-10-07 | Varian Associates | Slotted waveguide applicator |
US3939798A (en) * | 1974-12-19 | 1976-02-24 | Texas Instruments Incorporated | Optical thin film coater |
JPS6011404B2 (ja) * | 1975-11-01 | 1985-03-26 | 住友電気工業株式会社 | 無線結合用同軸ケーブル |
JPS53110378A (en) * | 1977-03-09 | 1978-09-27 | Hitachi Ltd | Plasma carrying device |
US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
DE2812523A1 (de) * | 1978-03-22 | 1979-09-27 | Kabel Metallwerke Ghh | Abstrahlendes koaxiales hochfrequenz-kabel |
GB2033355B (en) * | 1978-09-07 | 1982-05-06 | Standard Telephones Cables Ltd | Semiconductor processing |
JPS5578524A (en) * | 1978-12-10 | 1980-06-13 | Shunpei Yamazaki | Manufacture of semiconductor device |
FR2410803A1 (fr) * | 1979-03-16 | 1979-06-29 | Cim Lambda | Dispositif pour le traitement thermique ou thermochimique, en continu, d'objets, par emission de micro-ondes |
JPS55131175A (en) * | 1979-03-30 | 1980-10-11 | Toshiba Corp | Surface treatment apparatus with microwave plasma |
US4363828A (en) * | 1979-12-12 | 1982-12-14 | International Business Machines Corp. | Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas |
CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
US4410558A (en) * | 1980-05-19 | 1983-10-18 | Energy Conversion Devices, Inc. | Continuous amorphous solar cell production system |
US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
US4379181A (en) * | 1981-03-16 | 1983-04-05 | Energy Conversion Devices, Inc. | Method for plasma deposition of amorphous materials |
JPS5719567A (en) * | 1981-05-22 | 1982-02-01 | Hiroshi Adachi | Ice making vessel |
US4438723A (en) * | 1981-09-28 | 1984-03-27 | Energy Conversion Devices, Inc. | Multiple chamber deposition and isolation system and method |
FR2514033B1 (fr) * | 1981-10-02 | 1985-09-27 | Henaff Louis | Installation pour le depot de couches minces en grande surface en phase vapeur reactive par plasma |
-
1982
- 1982-11-12 US US06/441,280 patent/US4515107A/en not_active Expired - Lifetime
-
1983
- 1983-11-07 IN IN738/DEL/83A patent/IN165522B/en unknown
- 1983-11-08 AU AU21075/83A patent/AU560939B2/en not_active Ceased
- 1983-11-09 CA CA000440843A patent/CA1212169A/en not_active Expired
- 1983-11-10 ES ES527158A patent/ES8600572A1/es not_active Expired
- 1983-11-10 EP EP83306868A patent/EP0109808B1/en not_active Expired
- 1983-11-10 DE DE8383306868T patent/DE3373684D1/de not_active Expired
- 1983-11-11 JP JP58212316A patent/JPH0614513B2/ja not_active Expired - Lifetime
- 1983-11-11 KR KR1019830005345A patent/KR910006675B1/ko not_active IP Right Cessation
- 1983-11-11 BR BR8306207A patent/BR8306207A/pt unknown
Also Published As
Publication number | Publication date |
---|---|
JPH0614513B2 (ja) | 1994-02-23 |
KR910006675B1 (ko) | 1991-08-30 |
EP0109808A3 (en) | 1984-07-11 |
CA1212169A (en) | 1986-09-30 |
AU560939B2 (en) | 1987-04-30 |
DE3373684D1 (en) | 1987-10-22 |
KR840006726A (ko) | 1984-12-01 |
AU2107583A (en) | 1984-05-17 |
EP0109808B1 (en) | 1987-09-16 |
ES527158A0 (es) | 1985-10-01 |
EP0109808A2 (en) | 1984-05-30 |
IN165522B (pt) | 1989-11-04 |
ES8600572A1 (es) | 1985-10-01 |
US4515107A (en) | 1985-05-07 |
JPS59100516A (ja) | 1984-06-09 |
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