MX159162A - Camara mejorada de deposicion por descarga luminiscente para producir pilas fotovoltaicas depositando campas sucesivas de un material semiconductor sobre un substrato - Google Patents

Camara mejorada de deposicion por descarga luminiscente para producir pilas fotovoltaicas depositando campas sucesivas de un material semiconductor sobre un substrato

Info

Publication number
MX159162A
MX159162A MX199201A MX19920183A MX159162A MX 159162 A MX159162 A MX 159162A MX 199201 A MX199201 A MX 199201A MX 19920183 A MX19920183 A MX 19920183A MX 159162 A MX159162 A MX 159162A
Authority
MX
Mexico
Prior art keywords
substrate
deposition chamber
successive layers
semiconductive material
improved lighting
Prior art date
Application number
MX199201A
Other languages
English (en)
Inventor
Prem Nath
Kevin Richard Hoffman
Timothy Dean Laarman
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of MX159162A publication Critical patent/MX159162A/es

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45506—Turbulent flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Photovoltaic Devices (AREA)
MX199201A 1982-10-27 1983-10-25 Camara mejorada de deposicion por descarga luminiscente para producir pilas fotovoltaicas depositando campas sucesivas de un material semiconductor sobre un substrato MX159162A (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/437,075 US4462333A (en) 1982-10-27 1982-10-27 Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus

Publications (1)

Publication Number Publication Date
MX159162A true MX159162A (es) 1989-04-26

Family

ID=23734960

Family Applications (1)

Application Number Title Priority Date Filing Date
MX199201A MX159162A (es) 1982-10-27 1983-10-25 Camara mejorada de deposicion por descarga luminiscente para producir pilas fotovoltaicas depositando campas sucesivas de un material semiconductor sobre un substrato

Country Status (10)

Country Link
US (1) US4462333A (es)
EP (1) EP0107510A3 (es)
JP (1) JPH0642451B2 (es)
KR (1) KR840006565A (es)
AU (1) AU2061083A (es)
BR (1) BR8305910A (es)
CA (1) CA1212356A (es)
ES (1) ES8407249A1 (es)
IN (1) IN160670B (es)
MX (1) MX159162A (es)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4513684A (en) * 1982-12-22 1985-04-30 Energy Conversion Devices, Inc. Upstream cathode assembly
US4504526A (en) * 1983-09-26 1985-03-12 Libbey-Owens-Ford Company Apparatus and method for producing a laminar flow of constant velocity fluid along a substrate
JPS60155676A (ja) * 1984-01-24 1985-08-15 Canon Inc プラズマcvd装置
DE3427057A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
CN86104429A (zh) * 1985-07-05 1987-01-07 西屋电气公司 溅射镀膜设备的靶中阴极和接地屏蔽极的配置
DE4031770A1 (de) * 1990-10-06 1992-04-09 Leybold Ag Vorrichtung zur vermeidung von staubbildung
US5224441A (en) * 1991-09-27 1993-07-06 The Boc Group, Inc. Apparatus for rapid plasma treatments and method
GB2264957B (en) * 1992-03-12 1995-09-20 Bell Communications Res Deflected flow in a chemical vapor deposition cell
US6066826A (en) * 1998-03-16 2000-05-23 Yializis; Angelo Apparatus for plasma treatment of moving webs
JP4651072B2 (ja) 2001-05-31 2011-03-16 キヤノン株式会社 堆積膜形成方法、および堆積膜形成装置
US20070048456A1 (en) * 2004-09-14 2007-03-01 Keshner Marvin S Plasma enhanced chemical vapor deposition apparatus and method
EP1799879A1 (en) * 2004-09-14 2007-06-27 OptiSolar Inc. Plasma enhanced chemical vapor deposition apparatus and method
WO2006053218A2 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Pressure control system in a photovoltaic substrate deposition
WO2006053128A2 (en) * 2004-11-10 2006-05-18 Daystar Technologies, Inc. Pallet based system for forming thin-film solar cells
US20080139003A1 (en) * 2006-10-26 2008-06-12 Shahid Pirzada Barrier coating deposition for thin film devices using plasma enhanced chemical vapor deposition process
CN104040023B (zh) * 2012-01-16 2016-04-13 株式会社爱发科 成膜装置
TWI551725B (zh) * 2012-05-22 2016-10-01 隔板式沉積裝置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE760041A (fr) * 1970-01-02 1971-05-17 Ibm Procede et appareil de transfert de masse gazeuse
US4033287A (en) * 1976-01-22 1977-07-05 Bell Telephone Laboratories, Incorporated Radial flow reactor including glow discharge limiting shield
JPS5326442U (es) * 1976-08-12 1978-03-06
US4269137A (en) * 1979-03-19 1981-05-26 Xerox Corporation Pretreatment of substrates prior to thin film deposition
US4262631A (en) * 1979-10-01 1981-04-21 Kubacki Ronald M Thin film deposition apparatus using an RF glow discharge
JPS5675565A (en) * 1979-11-20 1981-06-22 Sumitomo Electric Ind Ltd Manufacturing method of thin film
US4410558A (en) * 1980-05-19 1983-10-18 Energy Conversion Devices, Inc. Continuous amorphous solar cell production system
US4369730A (en) * 1981-03-16 1983-01-25 Energy Conversion Devices, Inc. Cathode for generating a plasma
DE3272239D1 (en) * 1981-03-16 1986-09-04 Energy Conversion Devices Inc Apparatus including improved cathode for continuous deposition of amorphous material

Also Published As

Publication number Publication date
JPS59121828A (ja) 1984-07-14
ES526769A0 (es) 1984-08-16
ES8407249A1 (es) 1984-08-16
AU2061083A (en) 1984-05-03
US4462333A (en) 1984-07-31
BR8305910A (pt) 1984-06-05
IN160670B (es) 1987-07-25
KR840006565A (ko) 1984-11-30
EP0107510A3 (en) 1986-01-29
EP0107510A2 (en) 1984-05-02
CA1212356A (en) 1986-10-07
JPH0642451B2 (ja) 1994-06-01

Similar Documents

Publication Publication Date Title
BR8306207A (pt) Aparelho para a manufatura de dispositivos fotovoltaicos e conjunto para depositar um material sobre um substrato a partir de um plasma excitado por energia de microondas
GB2119168B (en) Forming crystallized semiconductor layers
MX158917A (es) Procedimiento para el revestimiento de un substrato
ES531596A0 (es) Un dispositivo fotovoltaico formado de multiples zonas de aleaciones de semiconductor depositadas sobre un sustrato
IL58488A0 (en) Deposition of a film of controlled composition on a substrate
IL62937A (en) Method of growing a layer of the ternary alloy cadmium mercury telluride onto a substrate
DE2967291D1 (en) Process for the deposition of a thin-film pattern on a substrate
BR8305910A (pt) Aperfeicoamento em uma camara de deposicao por descarga luminosa para a deposicao de camadas semi- condutoras sobre um substrato
FR2605647B1 (fr) Procede de depot en phase vapeur par flash thermique d'une couche isolante sur un substrat en materiau iii-v, application a la fabrication d'une structure mis
DE3371801D1 (en) A substrate for manufacturing single crystal thin films
JPS53112056A (en) Gas discharging panel of self shift type
GB2127438B (en) Depositing a film onto a substrate by electron-beam evaporation
BR8307045A (pt) Aperfeicoamento em aparelho de deposicao a descarga luminescente,aperfeicoamento em aparelho apropriado para depositar material semicondutor sobre um substrato,processo de depositar uma camada semicondutora uniforme atraves da inteira superficie de um substrato,e,processo para a deposicao a alta velocidade de material semicondutor amorfo em aparelhos de deposicao
JPS5423386A (en) Manufacture of semiconductor device
JPS55115372A (en) Photovoltaic device
JPS57184255A (en) Solar cell
RO89167A (ro) Procedeu pentru acoperirea prin electroforeza a unui substrat bun conducator de electricitate
JPS51147986A (en) Semiconductor light emission device
JPS5210686A (en) Sun cell for clock
JPS51123588A (en) Manufacturing method of thin film solar battery
ES542603A0 (es) Un procedimiento de desintegracion catodica para depositar una pelicula semiconductora amorfa sobre un sustrato
JPS52141595A (en) Thin film luminous element
JPS51137387A (en) Manufacturing method for a semiconductor
JPS534469A (en) Semiconductor device
JPS56142687A (en) Manufacture of photoelectric converter