ES548358A0 - Un metodo para el crecimiento de compuestos semiconductores epitaxicos de los grupos iii-v sobre un substrato. - Google Patents

Un metodo para el crecimiento de compuestos semiconductores epitaxicos de los grupos iii-v sobre un substrato.

Info

Publication number
ES548358A0
ES548358A0 ES548358A ES548358A ES548358A0 ES 548358 A0 ES548358 A0 ES 548358A0 ES 548358 A ES548358 A ES 548358A ES 548358 A ES548358 A ES 548358A ES 548358 A0 ES548358 A0 ES 548358A0
Authority
ES
Spain
Prior art keywords
epitaxic
growth
substrate
groups iii
semiconducting compounds
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES548358A
Other languages
English (en)
Other versions
ES8606523A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iconectiv LLC
Original Assignee
Bell Communications Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bell Communications Research Inc filed Critical Bell Communications Research Inc
Publication of ES548358A0 publication Critical patent/ES548358A0/es
Publication of ES8606523A1 publication Critical patent/ES8606523A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
ES548358A 1984-10-31 1985-10-30 Un metodo para el crecimiento de compuestos semiconductores epitaxicos de los grupos iii-v sobre un substrato. Expired ES8606523A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US66683184A 1984-10-31 1984-10-31

Publications (2)

Publication Number Publication Date
ES548358A0 true ES548358A0 (es) 1986-04-16
ES8606523A1 ES8606523A1 (es) 1986-04-16

Family

ID=24675668

Family Applications (1)

Application Number Title Priority Date Filing Date
ES548358A Expired ES8606523A1 (es) 1984-10-31 1985-10-30 Un metodo para el crecimiento de compuestos semiconductores epitaxicos de los grupos iii-v sobre un substrato.

Country Status (5)

Country Link
EP (1) EP0199736A1 (es)
JP (1) JPS62500695A (es)
CA (1) CA1250511A (es)
ES (1) ES8606523A1 (es)
WO (1) WO1986002776A1 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740606A (en) * 1986-07-01 1988-04-26 Morton Thiokol, Inc. Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films
US4792467A (en) * 1987-08-17 1988-12-20 Morton Thiokol, Inc. Method for vapor phase deposition of gallium nitride film

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2100692A1 (de) * 1970-01-09 1971-07-15 Hitachi Ltd Verfahren zum Herstellen einer epitaxisch gewachsenen Schicht eines GaAs tief 1 χ P tief χ Halbleitermaterial

Also Published As

Publication number Publication date
CA1250511A (en) 1989-02-28
EP0199736A1 (en) 1986-11-05
JPS62500695A (ja) 1987-03-19
ES8606523A1 (es) 1986-04-16
WO1986002776A1 (en) 1986-05-09

Similar Documents

Publication Publication Date Title
MX158917A (es) Procedimiento para el revestimiento de un substrato
ES507429A0 (es) Procedimiento mejorado para el recubrimiento por extrusion de un sustrato.
ES519670A0 (es) Un procedimiento mejorado para curar un revestimiento sobre un sustrato.
ES544297A0 (es) Procedimiento para preparar el compuesto 3-amino-3-deoxi-es-tanina
DE3688042D1 (de) Verfahren zur herstellung einer submikron-grabenstruktur auf einem halbleitenden substrat.
IT8349330A0 (it) Metodo per fabbricare un sostrato composito di semiconduttore su isolante, con profilo controllato perdensita' di difetti
ES550306A0 (es) Un procedimiento para la deposicion no electrolitica de cobre sobre un substrato.
ES554514A0 (es) Metodo para la obtencion de un material de estanqueidad apropiado para proteger un substrato.
DE3686453T2 (de) Verfahren zum herstellen einer duennen halbleiterschicht.
ES524991A0 (es) Un procedimiento para dotar de un sustrato de un revestimiento protector o decorativo a base de un beta-hidroxiuretano.
ES553945A0 (es) Procedimiento para fabricar tejas de hormigon por el metodo de extrusion.
DK261685D0 (da) Fremgangsmaade til fremstilling af optisk aktive, organiske forbindelser
DK152548C (da) Anlaeg til stabilisering af havbunden
MX162167A (es) Metodo mejorado para revestir un substrato con una pelicula de multiisocianato-fenolico
IT1150034B (it) Metodo per la formazione di strati di biossido di silicio su un substrato semiconduttore
ES541528A0 (es) Un procedimiento para adherir sustratos.
DE3578777D1 (de) Verfahren zur aluminium-dotierung einer halbleiteranordnung.
ES521273A0 (es) Procedimiento para el recubrimiento de cuero desdoblado.
ES522757A0 (es) "un procedimiento para preparar un compuesto organico de selenio"
AR240446A1 (es) Metodo para inhibir el crecimiento de algas.
NO862087L (no) Utstyr for utfoerelse av arbeid under toerre forhold paa en undervannskonstruksjon.
AR230443A1 (es) Procedimiento para aislar el compuesto(-)6a-10a-trans-1-hidroxi-3alquil c1-c10-6,6,9-trimetil-6a,7,8,10a-tetrahidrodibenzo(b,d)pirano de una mezcla sintetica cruda
ES544862A0 (es) Un metodo para preparar un compuesto de morfolinol
DE3668716D1 (de) Halbleitersubstratvorspannungsgenerator.
ES549876A0 (es) Perfeccionamientos en los sistemas para la realizacion de perforaciones circulares en el suelo.