CA1250511A - Technique for the growth of epitaxial compound semiconductor films - Google Patents

Technique for the growth of epitaxial compound semiconductor films

Info

Publication number
CA1250511A
CA1250511A CA000478159A CA478159A CA1250511A CA 1250511 A CA1250511 A CA 1250511A CA 000478159 A CA000478159 A CA 000478159A CA 478159 A CA478159 A CA 478159A CA 1250511 A CA1250511 A CA 1250511A
Authority
CA
Canada
Prior art keywords
gallium
compound
growth
vapor stream
arsenic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA000478159A
Other languages
English (en)
French (fr)
Inventor
Rajaram Bhat
Herbert M. Cox
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Iconectiv LLC
Original Assignee
Bell Communications Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bell Communications Research Inc filed Critical Bell Communications Research Inc
Application granted granted Critical
Publication of CA1250511A publication Critical patent/CA1250511A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA000478159A 1984-10-31 1985-04-02 Technique for the growth of epitaxial compound semiconductor films Expired CA1250511A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US66683184A 1984-10-31 1984-10-31
US666,831 1984-10-31

Publications (1)

Publication Number Publication Date
CA1250511A true CA1250511A (en) 1989-02-28

Family

ID=24675668

Family Applications (1)

Application Number Title Priority Date Filing Date
CA000478159A Expired CA1250511A (en) 1984-10-31 1985-04-02 Technique for the growth of epitaxial compound semiconductor films

Country Status (5)

Country Link
EP (1) EP0199736A1 (es)
JP (1) JPS62500695A (es)
CA (1) CA1250511A (es)
ES (1) ES8606523A1 (es)
WO (1) WO1986002776A1 (es)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4740606A (en) * 1986-07-01 1988-04-26 Morton Thiokol, Inc. Gallium hydride/trialkylamine adducts, and their use in deposition of III-V compound films
US4792467A (en) * 1987-08-17 1988-12-20 Morton Thiokol, Inc. Method for vapor phase deposition of gallium nitride film

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4007074A (en) * 1970-01-09 1977-02-08 Hitachi, Ltd. Method of making an epitaxial growth layer of GaAs1-x Px compound semiconductor

Also Published As

Publication number Publication date
JPS62500695A (ja) 1987-03-19
EP0199736A1 (en) 1986-11-05
WO1986002776A1 (en) 1986-05-09
ES8606523A1 (es) 1986-04-16
ES548358A0 (es) 1986-04-16

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