KR840006565A - 글로방전 침착연소실 - Google Patents

글로방전 침착연소실 Download PDF

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KR840006565A
KR840006565A KR1019830005094A KR830005094A KR840006565A KR 840006565 A KR840006565 A KR 840006565A KR 1019830005094 A KR1019830005094 A KR 1019830005094A KR 830005094 A KR830005094 A KR 830005094A KR 840006565 A KR840006565 A KR 840006565A
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substrate
cathode
combustion chamber
deposition
chamber
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KR1019830005094A
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2) 프램나스(외
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원본미기재
에너지 컨버젼 디바이스 인코포레이티드
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Publication of KR840006565A publication Critical patent/KR840006565A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45506—Turbulent flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Fluid Mechanics (AREA)
  • Photovoltaic Devices (AREA)

Abstract

내용 없음

Description

글로방전 침착연소실
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 셀의 각층이 반도체 합금으로 형성되는 다수의 p-i-n형 셀을 구비하는 탄뎀광전지 장치의 절단면도.
제2도는 제1도에 도시한 셀과 같은 광전지장치를 연속적으로 생산하는데 사용하기 위해 적용된 다중 글로방전 연소실 침착시스템의 선도.
제3도는 본 발명에 의한 처리가스 주입, 제한과 배출시스템을 도시하는 침착 연소실에 있는 캐소드 영역의 확대 절단 투시도.

Claims (7)

  1. 연소실이 기판, 기판으로부터 간격지워진 캐소드, 캐소드와 기판 사이에 침착 연소실 영역으로 처리가스를 주입하기 위한 수단, 기판층 표면 양단에 처리가스 유동흐름을 이룰 수 있는 주입수단, 과처리가스를 플라즈마로 분리하도록 캐소드를 에너지화하기 위한 수단을 내장하며, 기판상에 반도체층을 침착시키기 위해 적용된 고립글로 방전 침착 연소실로서, 기판(11)의 층표면 양단에 흐르는 처리 가스중에 집중된 희박과 압축으로 된 영역을 줄이는데 적용되어 기판상에 처리가스 흐름 패턴형성을 실제적으로 방지하기 위한 수단(70)을 구비하는 것을 특징으로 하는 글로방전 침착연소실.
  2. 제1항에 의한 장치로서, 감쇠수단이 층기판(11) 표면과 접촉하기 전에 처리가스가 지정되는 엇갈린 차폐플레이트(54a-5c)를 내장하는 차폐다기관(52)을 구비하는 것을 특징으로 하는 글로방전 침착연소실.
  3. 제2항에 의한 장치로서, 처리가스 주입수단이 차폐된 다기관(52)의 연소실내에 하우스된 개구도면(36)을 구비하는 것을 특징으로 하는 글로방전 침착연소실.
  4. 연소실이 적어도 한 개의 캐소드, 캐소드로부터 간격지워 제거된 기판, 캐소드의 상하 측면으로 정해진 캐소드 영역, 처리가스를 침착연소실로 주입시키기 위한 수단, 캐소드 영역으로부터 처리가스의 자유로운 흐름을 나타내기 위해 캐소드 영역을 적어도 부분적으로 둘러싸는 실드수단, 적어도 한 개의 캐소드를 에너지화하여 처리가스를 플라즈마로 분리하는 수단, 과 사용되지 않는 처리가스와 무침착된 플라즈마를 배출시키기 위한 수단을 내장하며, 상대적으로 큰 영역인 기판상에 반도체층을 침착시키는데 적용된 고립글로방전 침착연소실로서, 대향된 플랜지(52a-64a)를 내장하는 실드수단, 기판(11) 넓이보다 더 큰 플랜지 사이의 거리를 구비하여 기판이 실드수단 플랜지 아래의 침착연소실(28)의 캐소드영역을 통해 이동하여 전체 기판 수평넓이가 반도체 재료를 침착하기 위해 노출되는 것을 특징으로 하는 글로방전 침착연소실.
  5. 제4항에 장치로서, 플랜지(52a-64a)가 침착연소실(28)을 통과하는 기판(11)평면 상부에 실제적으로 병렬로 놓이는 것을 특징으로 하는 글로방전 침착연소실.
  6. 제5항에 의한 장치로서, 침착연소실(28)이 플랜지(52a-64a)쪽으로 기판을 추진시키는데 적용된 유인수단을 내장하는 것을 특징으로 하는 글로방전 침착연소실.
  7. 제6항에 의한 장치로서, 유인수단이 플랜지(52a-64a)에 의해 지지된 다수의 간격지워진 자석(50)인 것을 특징으로 하는 글로방전 침착연소실.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019830005094A 1982-10-27 1983-10-27 글로방전 침착연소실 KR840006565A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US437075 1982-10-27
US06/437,075 US4462333A (en) 1982-10-27 1982-10-27 Process gas introduction, confinement and evacuation system for glow discharge deposition apparatus

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KR840006565A true KR840006565A (ko) 1984-11-30

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US (1) US4462333A (ko)
EP (1) EP0107510A3 (ko)
JP (1) JPH0642451B2 (ko)
KR (1) KR840006565A (ko)
AU (1) AU2061083A (ko)
BR (1) BR8305910A (ko)
CA (1) CA1212356A (ko)
ES (1) ES526769A0 (ko)
IN (1) IN160670B (ko)
MX (1) MX159162A (ko)

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JPS60155676A (ja) * 1984-01-24 1985-08-15 Canon Inc プラズマｃｖｄ装置
DE3427057A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
CN86104429A (zh) * 1985-07-05 1987-01-07 西屋电气公司 溅射镀膜设备的靶中阴极和接地屏蔽极的配置
DE4031770A1 (de) * 1990-10-06 1992-04-09 Leybold Ag Vorrichtung zur vermeidung von staubbildung
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GB2264957B (en) * 1992-03-12 1995-09-20 Bell Communications Res Deflected flow in a chemical vapor deposition cell
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JP4651072B2 (ja) 2001-05-31 2011-03-16 キヤノン株式会社 堆積膜形成方法、および堆積膜形成装置
CA2553122A1 (en) * 2004-09-14 2006-03-23 Gen 3 Solar, Inc. Plasma enhanced chemical vapor deposition apparatus and method
US20070048456A1 (en) * 2004-09-14 2007-03-01 Keshner Marvin S Plasma enhanced chemical vapor deposition apparatus and method
US20060096536A1 (en) * 2004-11-10 2006-05-11 Daystar Technologies, Inc. Pressure control system in a photovoltaic substrate deposition apparatus
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US20080139003A1 (en) * 2006-10-26 2008-06-12 Shahid Pirzada Barrier coating deposition for thin film devices using plasma enhanced chemical vapor deposition process
JP5931091B2 (ja) * 2012-01-16 2016-06-08 株式会社アルバック 成膜装置
TWI551725B (zh) * 2012-05-22 2016-10-01 隔板式沉積裝置

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BR8305910A (pt) 1984-06-05
ES8407249A1 (es) 1984-08-16
ES526769A0 (es) 1984-08-16
AU2061083A (en) 1984-05-03
CA1212356A (en) 1986-10-07
US4462333A (en) 1984-07-31
EP0107510A2 (en) 1984-05-02
EP0107510A3 (en) 1986-01-29
JPH0642451B2 (ja) 1994-06-01
MX159162A (es) 1989-04-26
IN160670B (ko) 1987-07-25
JPS59121828A (ja) 1984-07-14

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