ES8600572A1 - Un aparato para fabricar dispositivos fotovoltaicos del tipo que incluyen una pluralidad de peliculas - Google Patents

Un aparato para fabricar dispositivos fotovoltaicos del tipo que incluyen una pluralidad de peliculas

Info

Publication number
ES8600572A1
ES8600572A1 ES527158A ES527158A ES8600572A1 ES 8600572 A1 ES8600572 A1 ES 8600572A1 ES 527158 A ES527158 A ES 527158A ES 527158 A ES527158 A ES 527158A ES 8600572 A1 ES8600572 A1 ES 8600572A1
Authority
ES
Spain
Prior art keywords
antenna
external lining
manufacture
camera
improved apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES527158A
Other languages
English (en)
Other versions
ES527158A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES527158A0 publication Critical patent/ES527158A0/es
Publication of ES8600572A1 publication Critical patent/ES8600572A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
    • H01J37/32761—Continuous moving
    • H01J37/3277—Continuous moving of continuous material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3325—Problems associated with coating large area
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

UN APARATO PARA DEPOSITAR UN MATERIAL SOBRE UN SUSTRATO DE UN PLASMA EXCITADO CON ENERGIA DE MICROONDAS.INCLUYE UNA CAMARA DE DEPOSICION, UNA FUENTE DE ENERGIA DE MICROONDAS Y UNA ANTENA QUE SE EXTIENDE HACIA LA CAMARA Y QUE SE ACOPLA CON LA FUENTE DE ENERGIA DE MICROONDAS. LA ANTENA INCLUYE UN FORRO EXTERNO FORMADO DE UN MATERIAL CONDUCTOR, UN CONDUCTOR INTERNO QUE SE EXTIENDE DENTRO Y AISLADO ELECTRICAMENTE DEL FORRO EXTERNO, Y UNA RANURA DENTRO DEL FORRO EXTERNO. EL APARATO INCLUYE TAMBIEN UN CONDUCTO DE ALIMENTACION PASANTE NUEVO Y MEJORADO PARA LA ANTENA QUE PERMITE QUE LA ANTENA SE EXTIENDA HACIA LA CAMARA MIENTRAS QUE ESTABLECE UN SELLO DE VACIO ENTRE LA CAMARA Y LA ANTENA.
ES527158A 1982-11-12 1983-11-10 Un aparato para fabricar dispositivos fotovoltaicos del tipo que incluyen una pluralidad de peliculas Expired ES8600572A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/441,280 US4515107A (en) 1982-11-12 1982-11-12 Apparatus for the manufacture of photovoltaic devices

Publications (2)

Publication Number Publication Date
ES527158A0 ES527158A0 (es) 1985-10-01
ES8600572A1 true ES8600572A1 (es) 1985-10-01

Family

ID=23752267

Family Applications (1)

Application Number Title Priority Date Filing Date
ES527158A Expired ES8600572A1 (es) 1982-11-12 1983-11-10 Un aparato para fabricar dispositivos fotovoltaicos del tipo que incluyen una pluralidad de peliculas

Country Status (10)

Country Link
US (1) US4515107A (es)
EP (1) EP0109808B1 (es)
JP (1) JPH0614513B2 (es)
KR (1) KR910006675B1 (es)
AU (1) AU560939B2 (es)
BR (1) BR8306207A (es)
CA (1) CA1212169A (es)
DE (1) DE3373684D1 (es)
ES (1) ES8600572A1 (es)
IN (1) IN165522B (es)

Families Citing this family (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2550007A1 (en) * 1983-07-29 1985-02-01 Sanyo Electric Co Method for producing a semiconducting film and photovoltaic device obtained by the method
US4619729A (en) 1984-02-14 1986-10-28 Energy Conversion Devices, Inc. Microwave method of making semiconductor members
JP2654433B2 (ja) * 1985-11-12 1997-09-17 株式会社 半導体エネルギー研究所 珪素半導体作製方法
JPH0766911B2 (ja) * 1985-11-18 1995-07-19 株式会社半導体エネルギー研究所 被膜形成方法
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
DE3427057A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
US4566403A (en) * 1985-01-30 1986-01-28 Sovonics Solar Systems Apparatus for microwave glow discharge deposition
US6113701A (en) * 1985-02-14 2000-09-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method, and system
US4664939A (en) * 1985-04-01 1987-05-12 Energy Conversion Devices, Inc. Vertical semiconductor processor
JPH0817159B2 (ja) * 1985-08-15 1996-02-21 キヤノン株式会社 堆積膜の形成方法
US6230650B1 (en) 1985-10-14 2001-05-15 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US6673722B1 (en) 1985-10-14 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Microwave enhanced CVD system under magnetic field
US4837048A (en) * 1985-10-24 1989-06-06 Canon Kabushiki Kaisha Method for forming a deposited film
KR910003169B1 (ko) * 1985-11-12 1991-05-20 가부시끼가이샤 한도다이 에네르기 겐뀨소 반도체 장치 제조 방법 및 장치
JPH0645885B2 (ja) * 1985-12-16 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH0645888B2 (ja) * 1985-12-17 1994-06-15 キヤノン株式会社 堆積膜形成法
JPS62142778A (ja) * 1985-12-18 1987-06-26 Canon Inc 堆積膜形成法
JPH0645890B2 (ja) * 1985-12-18 1994-06-15 キヤノン株式会社 堆積膜形成法
JPH0770485B2 (ja) * 1985-12-20 1995-07-31 キヤノン株式会社 光起電力素子の連続製造装置
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
JPH0651906B2 (ja) * 1985-12-25 1994-07-06 キヤノン株式会社 堆積膜形成法
JPH0770486B2 (ja) * 1985-12-26 1995-07-31 キヤノン株式会社 光起電力素子の連続製造装置
JPH0746729B2 (ja) * 1985-12-26 1995-05-17 キヤノン株式会社 薄膜トランジスタの製造方法
US4834023A (en) * 1986-12-19 1989-05-30 Canon Kabushiki Kaisha Apparatus for forming deposited film
US5130170A (en) * 1989-06-28 1992-07-14 Canon Kabushiki Kaisha Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation
EP0406690B1 (en) * 1989-06-28 1997-03-12 Canon Kabushiki Kaisha Process for continuously forming a large area functional deposited film by microwave PCVD method and an apparatus suitable for practicing the same
US5114770A (en) * 1989-06-28 1992-05-19 Canon Kabushiki Kaisha Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method
JPH05304096A (ja) * 1991-11-06 1993-11-16 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPH05251356A (ja) * 1991-11-06 1993-09-28 Semiconductor Energy Lab Co Ltd 被膜形成方法
US5476798A (en) * 1992-06-29 1995-12-19 United Solar Systems Corporation Plasma deposition process with substrate temperature control
AU4768793A (en) * 1992-06-29 1994-01-24 United Solar Systems Corporation Microwave energized deposition process with substrate temperature control
AU5598194A (en) * 1992-11-13 1994-06-08 Energy Conversion Devices Inc. Microwave apparatus for depositing thin films
FR2702119B1 (fr) * 1993-02-25 1995-07-13 Metal Process Dispositif d'excitation d'un plasma à la résonance cyclotronique électronique par l'intermédiaire d'un applicateur filaire d'un champ micro-onde et d'un champ magnétique statique.
JPH08232070A (ja) * 1994-12-26 1996-09-10 Canon Inc 堆積膜形成装置及びそれに用いられる電極
US6159300A (en) 1996-12-17 2000-12-12 Canon Kabushiki Kaisha Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device
DE19722272A1 (de) * 1997-05-28 1998-12-03 Leybold Systems Gmbh Vorrichtung zur Erzeugung von Plasma
EP1001449A1 (en) * 1998-10-16 2000-05-17 Canon Kabushiki Kaisha Deposited film forming system and process
WO2001078105A1 (de) * 2000-04-12 2001-10-18 Aixtron Ag Reaktionskammer mit wenigstens einer hf-durchführung
US20100279569A1 (en) * 2007-01-03 2010-11-04 Lockheed Martin Corporation Cnt-infused glass fiber materials and process therefor
US9005755B2 (en) 2007-01-03 2015-04-14 Applied Nanostructured Solutions, Llc CNS-infused carbon nanomaterials and process therefor
US8951632B2 (en) * 2007-01-03 2015-02-10 Applied Nanostructured Solutions, Llc CNT-infused carbon fiber materials and process therefor
US8951631B2 (en) 2007-01-03 2015-02-10 Applied Nanostructured Solutions, Llc CNT-infused metal fiber materials and process therefor
US20120189846A1 (en) * 2007-01-03 2012-07-26 Lockheed Martin Corporation Cnt-infused ceramic fiber materials and process therefor
US8158217B2 (en) * 2007-01-03 2012-04-17 Applied Nanostructured Solutions, Llc CNT-infused fiber and method therefor
US20090081441A1 (en) * 2007-09-20 2009-03-26 Lockheed Martin Corporation Fiber Tow Comprising Carbon-Nanotube-Infused Fibers
US20090081383A1 (en) * 2007-09-20 2009-03-26 Lockheed Martin Corporation Carbon Nanotube Infused Composites via Plasma Processing
US8585934B2 (en) 2009-02-17 2013-11-19 Applied Nanostructured Solutions, Llc Composites comprising carbon nanotubes on fiber
WO2010141130A1 (en) 2009-02-27 2010-12-09 Lockheed Martin Corporation Low temperature cnt growth using gas-preheat method
US20100224129A1 (en) * 2009-03-03 2010-09-09 Lockheed Martin Corporation System and method for surface treatment and barrier coating of fibers for in situ cnt growth
US20100260998A1 (en) * 2009-04-10 2010-10-14 Lockheed Martin Corporation Fiber sizing comprising nanoparticles
CN102388171B (zh) * 2009-04-10 2015-02-11 应用纳米结构方案公司 用于在连续移动的基底上生产碳纳米管的设备和方法
US9111658B2 (en) 2009-04-24 2015-08-18 Applied Nanostructured Solutions, Llc CNS-shielded wires
BRPI1016242A2 (pt) * 2009-04-24 2016-04-26 Applied Nanostructured Sols material de controle de assinatura baseado em cnt.
US8664573B2 (en) 2009-04-27 2014-03-04 Applied Nanostructured Solutions, Llc CNT-based resistive heating for deicing composite structures
BRPI1014624A2 (pt) * 2009-04-30 2016-04-05 Applied Nanostructured Sols método e sistema para catálise bem próxima para síntese de nanotubos de carbono
EP2461953A4 (en) * 2009-08-03 2014-05-07 Applied Nanostructured Sols USE OF NANOPARTICLES IN COMPOSITE FIBERS
EP2496739A4 (en) * 2009-11-02 2014-07-02 Applied Nanostructured Sols CNT-FOUNDED ARAMID FIBER MATERIALS AND METHOD THEREFOR
DE102009044496B4 (de) 2009-11-11 2023-11-02 Muegge Gmbh Vorrichtung zur Erzeugung von Plasma mittels Mikrowellen
BR112012010907A2 (pt) * 2009-11-23 2019-09-24 Applied Nanostructured Sols "materiais compósitos de cerâmica contendo materiais de fibra infundidos em nanotubo de carbono e métodos para a produção dos mesmos"
KR20120120172A (ko) * 2009-11-23 2012-11-01 어플라이드 나노스트럭처드 솔루션스, 엘엘씨. Ｃｎｔ 맞춤형 복합재 해상 기반의 구조체
AU2010353294B2 (en) 2009-12-14 2015-01-29 Applied Nanostructured Solutions, Llc Flame-resistant composite materials and articles containing carbon nanotube-infused fiber materials
US9167736B2 (en) 2010-01-15 2015-10-20 Applied Nanostructured Solutions, Llc CNT-infused fiber as a self shielding wire for enhanced power transmission line
US8999453B2 (en) 2010-02-02 2015-04-07 Applied Nanostructured Solutions, Llc Carbon nanotube-infused fiber materials containing parallel-aligned carbon nanotubes, methods for production thereof, and composite materials derived therefrom
US8787001B2 (en) 2010-03-02 2014-07-22 Applied Nanostructured Solutions, Llc Electrical devices containing carbon nanotube-infused fibers and methods for production thereof
CA2790205A1 (en) 2010-03-02 2011-09-09 Applied Nanostructured Solutions, Llc Spiral wound electrical devices containing carbon nanotube-infused electrode materials and methods and apparatuses for production thereof
US8780526B2 (en) 2010-06-15 2014-07-15 Applied Nanostructured Solutions, Llc Electrical devices containing carbon nanotube-infused fibers and methods for production thereof
US9017854B2 (en) 2010-08-30 2015-04-28 Applied Nanostructured Solutions, Llc Structural energy storage assemblies and methods for production thereof
JP2013540683A (ja) 2010-09-14 2013-11-07 アプライド ナノストラクチャード ソリューションズ リミテッド ライアビリティー カンパニー 成長したカーボン・ナノチューブを有するガラス基材及びその製造方法
AU2011305809A1 (en) 2010-09-22 2013-02-28 Applied Nanostructured Solutions, Llc Carbon fiber substrates having carbon nanotubes grown thereon and processes for production thereof
CA2782976A1 (en) 2010-09-23 2012-03-29 Applied Nanostructured Solutions, Llc Cnt-infused fiber as a self shielding wire for enhanced power transmission line
US9085464B2 (en) 2012-03-07 2015-07-21 Applied Nanostructured Solutions, Llc Resistance measurement system and method of using the same
US9093599B2 (en) 2013-07-26 2015-07-28 First Solar, Inc. Vapor deposition apparatus for continuous deposition of multiple thin film layers on a substrate
US11019715B2 (en) * 2018-07-13 2021-05-25 Mks Instruments, Inc. Plasma source having a dielectric plasma chamber with improved plasma resistance
WO2020078557A1 (en) * 2018-10-18 2020-04-23 Applied Materials, Inc. Deposition apparatus, system and method for depositing a material on a substrate
WO2021172065A1 (ja) * 2020-02-28 2021-09-02 国立大学法人東海国立大学機構 加工方法、加工装置、加工プログラムおよびエンドミル

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE863522C (de) * 1945-04-15 1953-01-19 Telefunken Gmbh Vorrichtung zur Regelung der Strahlungsdaempfung eines Hohlrohr-schlitzstrahlers
US3114652A (en) * 1960-04-15 1963-12-17 Alloyd Corp Vapor deposition process
US3471672A (en) * 1967-04-28 1969-10-07 Varian Associates Slotted waveguide applicator
US3939798A (en) * 1974-12-19 1976-02-24 Texas Instruments Incorporated Optical thin film coater
JPS6011404B2 (ja) * 1975-11-01 1985-03-26 住友電気工業株式会社 無線結合用同軸ケーブル
JPS53110378A (en) * 1977-03-09 1978-09-27 Hitachi Ltd Plasma carrying device
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
DE2812523A1 (de) * 1978-03-22 1979-09-27 Kabel Metallwerke Ghh Abstrahlendes koaxiales hochfrequenz-kabel
GB2033355B (en) * 1978-09-07 1982-05-06 Standard Telephones Cables Ltd Semiconductor processing
JPS5578524A (en) * 1978-12-10 1980-06-13 Shunpei Yamazaki Manufacture of semiconductor device
FR2410803A1 (fr) * 1979-03-16 1979-06-29 Cim Lambda Dispositif pour le traitement thermique ou thermochimique, en continu, d'objets, par emission de micro-ondes
JPS55131175A (en) * 1979-03-30 1980-10-11 Toshiba Corp Surface treatment apparatus with microwave plasma
US4363828A (en) * 1979-12-12 1982-12-14 International Business Machines Corp. Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
US4410558A (en) * 1980-05-19 1983-10-18 Energy Conversion Devices, Inc. Continuous amorphous solar cell production system
US4400409A (en) * 1980-05-19 1983-08-23 Energy Conversion Devices, Inc. Method of making p-doped silicon films
US4379181A (en) * 1981-03-16 1983-04-05 Energy Conversion Devices, Inc. Method for plasma deposition of amorphous materials
JPS5719567A (en) * 1981-05-22 1982-02-01 Hiroshi Adachi Ice making vessel
US4438723A (en) * 1981-09-28 1984-03-27 Energy Conversion Devices, Inc. Multiple chamber deposition and isolation system and method
FR2514033B1 (fr) * 1981-10-02 1985-09-27 Henaff Louis Installation pour le depot de couches minces en grande surface en phase vapeur reactive par plasma

Also Published As

Publication number Publication date
KR840006726A (ko) 1984-12-01
CA1212169A (en) 1986-09-30
EP0109808A3 (en) 1984-07-11
EP0109808A2 (en) 1984-05-30
JPH0614513B2 (ja) 1994-02-23
US4515107A (en) 1985-05-07
AU560939B2 (en) 1987-04-30
AU2107583A (en) 1984-05-17
DE3373684D1 (en) 1987-10-22
EP0109808B1 (en) 1987-09-16
IN165522B (es) 1989-11-04
ES527158A0 (es) 1985-10-01
JPS59100516A (ja) 1984-06-09
KR910006675B1 (ko) 1991-08-30
BR8306207A (pt) 1984-06-19

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