KR850003062A - 글로우 방전에 의한 반도체층 퇴적 방법 - Google Patents

글로우 방전에 의한 반도체층 퇴적 방법 Download PDF

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KR850003062A
KR850003062A KR1019840006659A KR840006659A KR850003062A KR 850003062 A KR850003062 A KR 850003062A KR 1019840006659 A KR1019840006659 A KR 1019840006659A KR 840006659 A KR840006659 A KR 840006659A KR 850003062 A KR850003062 A KR 850003062A
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South Korea
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conductive layer
segment
axis
positive axis
positive
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KR1019840006659A
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KR930002577B1 (ko
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하나크 죠셉존
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글렌 에이취. 브루수틀
알. 씨. 에이 코오포레이숀
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Publication of KR850003062A publication Critical patent/KR850003062A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

내용 없음

Description

글로우 방전에 의한 반도체층 퇴적 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 및 제2도는 본 발명에 사용된 서로 다른 두기판의 투시도. 제3도는 본 발명에 사용된 퇴적 장치의 횡단면도.

Claims (10)

  1. 절연 기판 표면위에 전기전도층을 퇴적하는 단계와, 양광주 축에 평행하는 방향으로 전기전도층이 놓이도록 상기 기판을 챔버내에 위치시키는 단계를 포함하는 글로우 방전의 양광주에서 개스로 비결정질 반도체 물질층을 퇴적시키는 방법에 있어서, 분리선 간에 전기적으로 절연된 세그멘트를 다수 만들기 위해 전기전도층을 분할하는 단계와, 상기 전기전도층의 하면을 양광주의 축에 평행하는 방향으로 놓고 세그멘트들간의 분리선 축이 양광주 축에 수직하는 방향으로 놓이도록 상기 기판을 챔버내에 위치 시키는 단계를 구비하는 것을 특징으로 하는 비결정질 반도체 물질층의 퇴적 방법.
  2. 제1항에 있어서, 양광주 축을 따른 플라즈마 포텐셜 경도에 의해 분할되는 분리석들간의 세그멘트폭은 양광주 축을 따른 전기전도층위의 관련 플라즈마 포덴셜의 최대허용 차값 이하인 것을 특징으로 하는 비결정질 반도체 물질의 퇴적 방법.
  3. 제2항에 있어서, 상기 취대 허용차는 대략 15볼트인 것을 특징으로 하는 비결정질 반도체 물질의 퇴적 방법.
  4. 제3항에 있어서, 세그멘트 폭은 대략 3.85cm 이하인 것을 특징으로 하는 비결정질 반도체 물질의 퇴적방법.
  5. 제4항에 있어서, 세그멘트 폭은 대략 0.25 내지 1.5cm 범위내에 있는 것을 특징으로 하는 비결정질 반도체 물지르이 퇴적 방법.
  6. 제5항에 있어서, 세크멘트의 폭은 대략 0.5cm인 것을 특징으로 하는 비결정질 반도체 물질의 퇴적 방법.
  7. 제2항에 있어서, 부-세그멘트를 형성하도록 세그멘트의 처음 분할 방향에 수직방향으로 세그멘트를 재차 분할하는 단계를 추가로 구비하는 것을 특징으로 하는 비결정질 반도체 물질의 퇴적 방법.
  8. 제7항에 있어서, 양광주 축에 수직인 플라즈마 포텐셜 경도에 의해 분할되는 부-분리선간의 부-세그맨트폭은 양광주축에 수직인 전기전도층위의 플라즈마 포텐셜의 최대 허용값 이하인 것을 특징으로 하는 비결정질 반드체 물질의 퇴적 방법.
  9. 제2항에 있어서, 개스는 실탄개스를 포함하는 것을 특징으로 하는 비결정질 반도체물질의 퇴적 방법.
  10. 제1항에 있어서, 기판을 반응기의 나머지 소자들과 전기적으로 절연시킬 수 있도록 위치시킨 것을 특징으로 하는 비결정질 반도체 물질의 퇴적 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019840006659A 1983-10-27 1984-10-26 글로우 방전에 의한 반도체층 퇴적 방법 KR930002577B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US546047 1983-10-27
US06/546,047 US4481230A (en) 1983-10-27 1983-10-27 Method of depositing a semiconductor layer from a glow discharge

Publications (2)

Publication Number Publication Date
KR850003062A true KR850003062A (ko) 1985-05-28
KR930002577B1 KR930002577B1 (ko) 1993-04-03

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KR1019840006659A KR930002577B1 (ko) 1983-10-27 1984-10-26 글로우 방전에 의한 반도체층 퇴적 방법

Country Status (4)

Country Link
US (1) US4481230A (ko)
JP (1) JPS60111419A (ko)
KR (1) KR930002577B1 (ko)
GB (1) GB2148947B (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066422A (ja) * 1983-09-21 1985-04-16 Kanegafuchi Chem Ind Co Ltd 半導体製造法
US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
US6786997B1 (en) 1984-11-26 2004-09-07 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus
JPH0752718B2 (ja) * 1984-11-26 1995-06-05 株式会社半導体エネルギー研究所 薄膜形成方法
JPS61198685A (ja) * 1985-02-27 1986-09-03 Kanegafuchi Chem Ind Co Ltd 半導体装置の製法
GB8927377D0 (en) * 1989-12-04 1990-01-31 Univ Edinburgh Improvements in and relating to amperometric assays
DE19581590T1 (de) * 1994-03-25 1997-04-17 Amoco Enron Solar Erhöhung eines Stabilitätsverhaltens von Vorrichtungen auf der Grundlage von amorphem Silizium, die durch Plasmaablagerung unter hochgradiger Wasserstoffverdünnung bei niedrigerer Temperatur hergestellt werden
US6320261B1 (en) 1998-04-21 2001-11-20 Micron Technology, Inc. High aspect ratio metallization structures for shallow junction devices, and methods of forming the same
US6121134A (en) * 1998-04-21 2000-09-19 Micron Technology, Inc. High aspect ratio metallization structures and processes for fabricating the same
US6077722A (en) * 1998-07-14 2000-06-20 Bp Solarex Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts
US20030044539A1 (en) * 2001-02-06 2003-03-06 Oswald Robert S. Process for producing photovoltaic devices
US7799612B2 (en) * 2007-06-25 2010-09-21 Spansion Llc Process applying die attach film to singulated die
JPWO2009020073A1 (ja) * 2007-08-06 2010-11-04 シャープ株式会社 薄膜光電変換モジュールの製造方法および製造装置
CN108447800B (zh) * 2018-01-31 2019-12-10 北京铂阳顶荣光伏科技有限公司 薄膜电池的制造方法

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Publication number Priority date Publication date Assignee Title
US4064521A (en) * 1975-07-28 1977-12-20 Rca Corporation Semiconductor device having a body of amorphous silicon
US4315096A (en) * 1980-07-25 1982-02-09 Eastman Kodak Company Integrated array of photovoltaic cells having minimized shorting losses
JPS5952835A (ja) * 1982-09-20 1984-03-27 Semiconductor Energy Lab Co Ltd プラズマ気相反応装置
JPS5996778A (ja) * 1982-11-24 1984-06-04 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法

Also Published As

Publication number Publication date
JPS60111419A (ja) 1985-06-17
JPH0533526B2 (ko) 1993-05-19
GB8426764D0 (en) 1984-11-28
US4481230A (en) 1984-11-06
GB2148947A (en) 1985-06-05
GB2148947B (en) 1987-02-04
KR930002577B1 (ko) 1993-04-03

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