CA1212169A - Apparatus for the manufacture of photovoltaic devices - Google Patents
Apparatus for the manufacture of photovoltaic devicesInfo
- Publication number
- CA1212169A CA1212169A CA000440843A CA440843A CA1212169A CA 1212169 A CA1212169 A CA 1212169A CA 000440843 A CA000440843 A CA 000440843A CA 440843 A CA440843 A CA 440843A CA 1212169 A CA1212169 A CA 1212169A
- Authority
- CA
- Canada
- Prior art keywords
- antenna
- microwave energy
- substrate
- outer sheath
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000151 deposition Methods 0.000 claims abstract description 99
- 230000008021 deposition Effects 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 65
- 239000000463 material Substances 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 34
- 239000004020 conductor Substances 0.000 claims abstract description 17
- 239000007789 gas Substances 0.000 claims description 32
- 238000006243 chemical reaction Methods 0.000 claims description 11
- 238000001816 cooling Methods 0.000 claims description 10
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 230000008774 maternal effect Effects 0.000 claims 2
- 210000004027 cell Anatomy 0.000 description 30
- 239000000956 alloy Substances 0.000 description 26
- 229910045601 alloy Inorganic materials 0.000 description 25
- 238000000034 method Methods 0.000 description 19
- 210000002381 plasma Anatomy 0.000 description 15
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 5
- 238000010924 continuous production Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000010943 off-gassing Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32733—Means for moving the material to be treated
- H01J37/32752—Means for moving the material to be treated for moving the material across the discharge
- H01J37/32761—Continuous moving
- H01J37/3277—Continuous moving of continuous material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
- H10F71/107—Continuous treatment of the devices, e.g. roll-to roll processes or multi-chamber deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
- H01J2237/3325—Problems associated with coating large area
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US441,280 | 1982-11-12 | ||
| US06/441,280 US4515107A (en) | 1982-11-12 | 1982-11-12 | Apparatus for the manufacture of photovoltaic devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1212169A true CA1212169A (en) | 1986-09-30 |
Family
ID=23752267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000440843A Expired CA1212169A (en) | 1982-11-12 | 1983-11-09 | Apparatus for the manufacture of photovoltaic devices |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US4515107A (en:Method) |
| EP (1) | EP0109808B1 (en:Method) |
| JP (1) | JPH0614513B2 (en:Method) |
| KR (1) | KR910006675B1 (en:Method) |
| AU (1) | AU560939B2 (en:Method) |
| BR (1) | BR8306207A (en:Method) |
| CA (1) | CA1212169A (en:Method) |
| DE (1) | DE3373684D1 (en:Method) |
| ES (1) | ES527158A0 (en:Method) |
| IN (1) | IN165522B (en:Method) |
Families Citing this family (77)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2550007A1 (en) * | 1983-07-29 | 1985-02-01 | Sanyo Electric Co | Method for producing a semiconducting film and photovoltaic device obtained by the method |
| US4619729A (en) * | 1984-02-14 | 1986-10-28 | Energy Conversion Devices, Inc. | Microwave method of making semiconductor members |
| JPH0766911B2 (ja) * | 1985-11-18 | 1995-07-19 | 株式会社半導体エネルギー研究所 | 被膜形成方法 |
| US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
| JP2654433B2 (ja) * | 1985-11-12 | 1997-09-17 | 株式会社 半導体エネルギー研究所 | 珪素半導体作製方法 |
| DE3427057A1 (de) * | 1984-07-23 | 1986-01-23 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum |
| US4566403A (en) * | 1985-01-30 | 1986-01-28 | Sovonics Solar Systems | Apparatus for microwave glow discharge deposition |
| US6113701A (en) | 1985-02-14 | 2000-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
| US4664939A (en) * | 1985-04-01 | 1987-05-12 | Energy Conversion Devices, Inc. | Vertical semiconductor processor |
| JPH0817159B2 (ja) * | 1985-08-15 | 1996-02-21 | キヤノン株式会社 | 堆積膜の形成方法 |
| US6230650B1 (en) | 1985-10-14 | 2001-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
| US6673722B1 (en) | 1985-10-14 | 2004-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Microwave enhanced CVD system under magnetic field |
| US4837048A (en) * | 1985-10-24 | 1989-06-06 | Canon Kabushiki Kaisha | Method for forming a deposited film |
| KR910003169B1 (ko) * | 1985-11-12 | 1991-05-20 | 가부시끼가이샤 한도다이 에네르기 겐뀨소 | 반도체 장치 제조 방법 및 장치 |
| JPH0645885B2 (ja) * | 1985-12-16 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
| JPH0645888B2 (ja) * | 1985-12-17 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
| JPH0645890B2 (ja) * | 1985-12-18 | 1994-06-15 | キヤノン株式会社 | 堆積膜形成法 |
| JPS62142778A (ja) * | 1985-12-18 | 1987-06-26 | Canon Inc | 堆積膜形成法 |
| JPH0770485B2 (ja) * | 1985-12-20 | 1995-07-31 | キヤノン株式会社 | 光起電力素子の連続製造装置 |
| US5160543A (en) * | 1985-12-20 | 1992-11-03 | Canon Kabushiki Kaisha | Device for forming a deposited film |
| JPH0651906B2 (ja) * | 1985-12-25 | 1994-07-06 | キヤノン株式会社 | 堆積膜形成法 |
| JPH0746729B2 (ja) * | 1985-12-26 | 1995-05-17 | キヤノン株式会社 | 薄膜トランジスタの製造方法 |
| JPH0770486B2 (ja) * | 1985-12-26 | 1995-07-31 | キヤノン株式会社 | 光起電力素子の連続製造装置 |
| US4834023A (en) * | 1986-12-19 | 1989-05-30 | Canon Kabushiki Kaisha | Apparatus for forming deposited film |
| JPH0176027U (en:Method) * | 1987-11-08 | 1989-05-23 | ||
| US5114770A (en) * | 1989-06-28 | 1992-05-19 | Canon Kabushiki Kaisha | Method for continuously forming functional deposited films with a large area by a microwave plasma cvd method |
| EP0406690B1 (en) * | 1989-06-28 | 1997-03-12 | Canon Kabushiki Kaisha | Process for continuously forming a large area functional deposited film by microwave PCVD method and an apparatus suitable for practicing the same |
| US5130170A (en) * | 1989-06-28 | 1992-07-14 | Canon Kabushiki Kaisha | Microwave pcvd method for continuously forming a large area functional deposited film using a curved moving substrate web with microwave energy with a directivity in one direction perpendicular to the direction of microwave propagation |
| JPH05304096A (ja) * | 1991-11-06 | 1993-11-16 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPH05251356A (ja) * | 1991-11-06 | 1993-09-28 | Semiconductor Energy Lab Co Ltd | 被膜形成方法 |
| US5476798A (en) * | 1992-06-29 | 1995-12-19 | United Solar Systems Corporation | Plasma deposition process with substrate temperature control |
| ATE212750T1 (de) * | 1992-06-29 | 2002-02-15 | United Solar Systems Corp | Mikrowellengespeistes abscheideverfahren mit regelung der substrattemperatur. |
| EP0931853B1 (en) * | 1992-11-13 | 2001-12-05 | Energy Conversion Devices, Inc. | Method of depositing barrier coatings by plasma assisted chemical vapour deposition |
| FR2702119B1 (fr) * | 1993-02-25 | 1995-07-13 | Metal Process | Dispositif d'excitation d'un plasma à la résonance cyclotronique électronique par l'intermédiaire d'un applicateur filaire d'un champ micro-onde et d'un champ magnétique statique. |
| JPH08232070A (ja) * | 1994-12-26 | 1996-09-10 | Canon Inc | 堆積膜形成装置及びそれに用いられる電極 |
| US6159300A (en) | 1996-12-17 | 2000-12-12 | Canon Kabushiki Kaisha | Apparatus for forming non-single-crystal semiconductor thin film, method for forming non-single-crystal semiconductor thin film, and method for producing photovoltaic device |
| DE19722272A1 (de) * | 1997-05-28 | 1998-12-03 | Leybold Systems Gmbh | Vorrichtung zur Erzeugung von Plasma |
| EP1001449A1 (en) * | 1998-10-16 | 2000-05-17 | Canon Kabushiki Kaisha | Deposited film forming system and process |
| JP2003530487A (ja) * | 2000-04-12 | 2003-10-14 | アイクストロン、アーゲー | 少なくとも１つの高周波貫通端子を備えた反応室 |
| US9005755B2 (en) | 2007-01-03 | 2015-04-14 | Applied Nanostructured Solutions, Llc | CNS-infused carbon nanomaterials and process therefor |
| US8951632B2 (en) * | 2007-01-03 | 2015-02-10 | Applied Nanostructured Solutions, Llc | CNT-infused carbon fiber materials and process therefor |
| US20120189846A1 (en) * | 2007-01-03 | 2012-07-26 | Lockheed Martin Corporation | Cnt-infused ceramic fiber materials and process therefor |
| US20100279569A1 (en) * | 2007-01-03 | 2010-11-04 | Lockheed Martin Corporation | Cnt-infused glass fiber materials and process therefor |
| US8158217B2 (en) * | 2007-01-03 | 2012-04-17 | Applied Nanostructured Solutions, Llc | CNT-infused fiber and method therefor |
| US8951631B2 (en) | 2007-01-03 | 2015-02-10 | Applied Nanostructured Solutions, Llc | CNT-infused metal fiber materials and process therefor |
| US20090081383A1 (en) * | 2007-09-20 | 2009-03-26 | Lockheed Martin Corporation | Carbon Nanotube Infused Composites via Plasma Processing |
| US20090081441A1 (en) * | 2007-09-20 | 2009-03-26 | Lockheed Martin Corporation | Fiber Tow Comprising Carbon-Nanotube-Infused Fibers |
| WO2010144161A2 (en) | 2009-02-17 | 2010-12-16 | Lockheed Martin Corporation | Composites comprising carbon nanotubes on fiber |
| BRPI1008131A2 (pt) | 2009-02-27 | 2016-03-08 | Applied Nanostructured Sols | "crescimento de nanotubo de carbono de baixa temperatura usando método de preaquecimento de gás". |
| US20100224129A1 (en) * | 2009-03-03 | 2010-09-09 | Lockheed Martin Corporation | System and method for surface treatment and barrier coating of fibers for in situ cnt growth |
| US20100260998A1 (en) * | 2009-04-10 | 2010-10-14 | Lockheed Martin Corporation | Fiber sizing comprising nanoparticles |
| AU2010235123A1 (en) * | 2009-04-10 | 2011-10-06 | Applied Nanostructured Solutions Llc | Apparatus and method for the production of carbon nanotubes on a continuously moving substrate |
| JP2012525012A (ja) * | 2009-04-24 | 2012-10-18 | アプライド ナノストラクチャード ソリューションズ リミテッド ライアビリティー カンパニー | Ｃｎｔ浸出ｅｍｉ遮蔽複合材料及びコーティング |
| US9111658B2 (en) | 2009-04-24 | 2015-08-18 | Applied Nanostructured Solutions, Llc | CNS-shielded wires |
| KR101696207B1 (ko) | 2009-04-27 | 2017-01-13 | 어플라이드 나노스트럭처드 솔루션스, 엘엘씨. | 복합 구조물 제빙을 위한 ｃｎｔ계 저항 가열 |
| CA2760447A1 (en) * | 2009-04-30 | 2010-11-04 | Applied Nanostructured Solutions, Llc | Method and system for close proximity catalysis for carbon nanotube synthesis |
| CA2765460A1 (en) * | 2009-08-03 | 2011-02-10 | Applied Nanostructured Solutions, Llc | Incorporation of nanoparticles in composite fibers |
| US20110171469A1 (en) * | 2009-11-02 | 2011-07-14 | Applied Nanostructured Solutions, Llc | Cnt-infused aramid fiber materials and process therefor |
| DE102009044496B4 (de) * | 2009-11-11 | 2023-11-02 | Muegge Gmbh | Vorrichtung zur Erzeugung von Plasma mittels Mikrowellen |
| KR20120120172A (ko) * | 2009-11-23 | 2012-11-01 | 어플라이드 나노스트럭처드 솔루션스, 엘엘씨. | Ｃｎｔ 맞춤형 복합재 해상 기반의 구조체 |
| CA2775619A1 (en) * | 2009-11-23 | 2011-05-26 | Applied Nanostructured Solutions, Llc | Ceramic composite materials containing carbon nanotube-infused fiber materials and methods for production thereof |
| BR112012012979A2 (pt) | 2009-12-14 | 2019-09-24 | Applied Nanostructured Sols | materias compostos resistentes à chama e artigos contendo materiais de fibra infundidos de nanotubo de carbono. |
| US9167736B2 (en) | 2010-01-15 | 2015-10-20 | Applied Nanostructured Solutions, Llc | CNT-infused fiber as a self shielding wire for enhanced power transmission line |
| WO2011146151A2 (en) | 2010-02-02 | 2011-11-24 | Applied Nanostructured Solutions, Llc | Fiber containing parallel-aligned carbon nanotubes |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE863522C (de) * | 1945-04-15 | 1953-01-19 | Telefunken Gmbh | Vorrichtung zur Regelung der Strahlungsdaempfung eines Hohlrohr-schlitzstrahlers |
| US3114652A (en) * | 1960-04-15 | 1963-12-17 | Alloyd Corp | Vapor deposition process |
| US3471672A (en) * | 1967-04-28 | 1969-10-07 | Varian Associates | Slotted waveguide applicator |
| US3939798A (en) * | 1974-12-19 | 1976-02-24 | Texas Instruments Incorporated | Optical thin film coater |
| JPS6011404B2 (ja) * | 1975-11-01 | 1985-03-26 | 住友電気工業株式会社 | 無線結合用同軸ケーブル |
| JPS53110378A (en) * | 1977-03-09 | 1978-09-27 | Hitachi Ltd | Plasma carrying device |
| US4226898A (en) * | 1978-03-16 | 1980-10-07 | Energy Conversion Devices, Inc. | Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process |
| DE2812523A1 (de) * | 1978-03-22 | 1979-09-27 | Kabel Metallwerke Ghh | Abstrahlendes koaxiales hochfrequenz-kabel |
| GB2033355B (en) * | 1978-09-07 | 1982-05-06 | Standard Telephones Cables Ltd | Semiconductor processing |
| JPS5578524A (en) * | 1978-12-10 | 1980-06-13 | Shunpei Yamazaki | Manufacture of semiconductor device |
| FR2410803A1 (fr) * | 1979-03-16 | 1979-06-29 | Cim Lambda | Dispositif pour le traitement thermique ou thermochimique, en continu, d'objets, par emission de micro-ondes |
| JPS55131175A (en) * | 1979-03-30 | 1980-10-11 | Toshiba Corp | Surface treatment apparatus with microwave plasma |
| US4363828A (en) * | 1979-12-12 | 1982-12-14 | International Business Machines Corp. | Method for depositing silicon films and related materials by a glow discharge in a disiland or higher order silane gas |
| CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
| US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
| US4410558A (en) * | 1980-05-19 | 1983-10-18 | Energy Conversion Devices, Inc. | Continuous amorphous solar cell production system |
| US4379181A (en) * | 1981-03-16 | 1983-04-05 | Energy Conversion Devices, Inc. | Method for plasma deposition of amorphous materials |
| JPS5719567A (en) * | 1981-05-22 | 1982-02-01 | Hiroshi Adachi | Ice making vessel |
| US4438723A (en) * | 1981-09-28 | 1984-03-27 | Energy Conversion Devices, Inc. | Multiple chamber deposition and isolation system and method |
| FR2514033B1 (fr) * | 1981-10-02 | 1985-09-27 | Henaff Louis | Installation pour le depot de couches minces en grande surface en phase vapeur reactive par plasma |
-
1982
- 1982-11-12 US US06/441,280 patent/US4515107A/en not_active Expired - Lifetime
-
1983
- 1983-11-07 IN IN738/DEL/83A patent/IN165522B/en unknown
- 1983-11-08 AU AU21075/83A patent/AU560939B2/en not_active Ceased
- 1983-11-09 CA CA000440843A patent/CA1212169A/en not_active Expired
- 1983-11-10 ES ES527158A patent/ES527158A0/es active Granted
- 1983-11-10 DE DE8383306868T patent/DE3373684D1/de not_active Expired
- 1983-11-10 EP EP83306868A patent/EP0109808B1/en not_active Expired
- 1983-11-11 KR KR1019830005345A patent/KR910006675B1/ko not_active Expired
- 1983-11-11 JP JP58212316A patent/JPH0614513B2/ja not_active Expired - Lifetime
- 1983-11-11 BR BR8306207A patent/BR8306207A/pt unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0614513B2 (ja) | 1994-02-23 |
| EP0109808A3 (en) | 1984-07-11 |
| ES8600572A1 (es) | 1985-10-01 |
| KR910006675B1 (ko) | 1991-08-30 |
| ES527158A0 (es) | 1985-10-01 |
| DE3373684D1 (en) | 1987-10-22 |
| AU560939B2 (en) | 1987-04-30 |
| JPS59100516A (ja) | 1984-06-09 |
| IN165522B (en:Method) | 1989-11-04 |
| EP0109808B1 (en) | 1987-09-16 |
| US4515107A (en) | 1985-05-07 |
| KR840006726A (ko) | 1984-12-01 |
| AU2107583A (en) | 1984-05-17 |
| BR8306207A (pt) | 1984-06-19 |
| EP0109808A2 (en) | 1984-05-30 |
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