ES2163135T3 - Disposicion de circuito para generar tensiones negativas. - Google Patents

Disposicion de circuito para generar tensiones negativas.

Info

Publication number
ES2163135T3
ES2163135T3 ES97909176T ES97909176T ES2163135T3 ES 2163135 T3 ES2163135 T3 ES 2163135T3 ES 97909176 T ES97909176 T ES 97909176T ES 97909176 T ES97909176 T ES 97909176T ES 2163135 T3 ES2163135 T3 ES 2163135T3
Authority
ES
Spain
Prior art keywords
terminal
transistor
circuit
negative voltages
generate negative
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES97909176T
Other languages
English (en)
Inventor
Martin Bloch
Christl Lauterbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of ES2163135T3 publication Critical patent/ES2163135T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H02M3/075—Charge pumps of the Schenkel-type including a plurality of stages and two sets of clock signals, one set for the odd and one set for the even numbered stages
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type
    • H02M3/078—Charge pumps of the Schenkel-type with means for reducing the back bias effect, i.e. the effect which causes the threshold voltage of transistors to increase as more stages are added to the converters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
  • Generation Of Surge Voltage And Current (AREA)
  • Details Of Television Scanning (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Power Sources (AREA)

Abstract

LA INVENCION SE REFIERE A UN CIRCUITO PARA GENERAR TENSIONES NEGATIVAS, QUE COMPRENDE UN PRIMER TRANSISTOR (TX2), CUYO PRIMER TERMINAL ESTA CONECTADO A UN TERMINAL DE ENTRADA (E), Y CUYO SEGUNDO TERMINAL VA CONECTADO A UN TERMINAL DE SALIDA (A) DEL CIRCUITO, Y CUYO TERMINAL DE PUERTA VA CONECTADO A UN PRIMER TERMINAL DE IMPULSO DE RELOJ, A TRAVES DE UN PRIMER CONDENSADOR (CB2). EL CIRCUITO COMPRENDE ADEMAS UN SEGUNDO TRANSISTOR (TY2), CUYO PRIMER TERMINAL VA CONECTADO AL TERMINAL DE PUERTA DEL PRIMER TRANSISTOR (TX2), CUYO SEGUNDO TERMINAL SE ENCUENTRA CONECTADO AL SEGUNDO TERMINAL DEL PRIMER TRANSISTOR (TX2), Y CUYO TERMINAL DE PUERTA ESTA CONECTADO AL PRIMER TERMINAL DEL PRIMER TRANSISTOR (TX2). ADEMAS, EL CIRCUITO COMPRENDE UN SEGUNDO CONDENSADOR (CP2), CUYO PRIMER TERMINAL VA CONECTADO AL SEGUNDO TERMINAL DEL PRIMER TRANSISTOR (TX2), Y CUYO SEGUNDO TERMINAL VA CONECTADO A UN SEGUNDO TERMINAL DE IMPULSO DE RELOJ. LOS TRANSISTORES (TX2, TY2) SON TRANSISTORES MOS CONFIGURADOS EN UNA ESTRUCTURA DE TRIPLE CAVIDAD. EL PRIMER TERMINAL DE UN TERCER TRANSISTOR (TZ2) SE CONECTA AL SEGUNDO TERMINAL DEL PRIMER TRANSISTOR (TX2), EL SEGUNDO TERMINAL DE DICHO TERCER TRANSISTOR (TZ2) ESTA CONECTADO AL ESPACIO O ESPACIOS HUECOS (KW) QUE ALOJAN LOS TRANSISTORES (TX2, TY2, TZ2), Y EL TERMINAL DE PUERTA DEL TERCER TRANSISTOR (TZ2) SE ENCUENTRA CONECTADO AL PRIMER TERMINAL DEL PRIMER TRANSISTOR (TX2).
ES97909176T 1997-01-24 1997-09-23 Disposicion de circuito para generar tensiones negativas. Expired - Lifetime ES2163135T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702535 1997-01-24

Publications (1)

Publication Number Publication Date
ES2163135T3 true ES2163135T3 (es) 2002-01-16

Family

ID=7818267

Family Applications (1)

Application Number Title Priority Date Filing Date
ES97909176T Expired - Lifetime ES2163135T3 (es) 1997-01-24 1997-09-23 Disposicion de circuito para generar tensiones negativas.

Country Status (11)

Country Link
EP (1) EP0954896B1 (es)
JP (1) JP3386141B2 (es)
KR (1) KR100403825B1 (es)
CN (1) CN1123110C (es)
AT (1) ATE204413T1 (es)
BR (1) BR9714533A (es)
DE (1) DE59704336D1 (es)
ES (1) ES2163135T3 (es)
RU (1) RU2189686C2 (es)
UA (1) UA52716C2 (es)
WO (1) WO1998033264A1 (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3554497B2 (ja) * 1998-12-08 2004-08-18 シャープ株式会社 チャージポンプ回路
DE19953882C2 (de) * 1999-11-09 2001-10-18 Infineon Technologies Ag Ladungspumpe zum Erzeugen von hohen Spannungen für Halbleiterschaltungen
TW486869B (en) * 1999-12-27 2002-05-11 Sanyo Electric Co Voltage producing circuit and a display device provided with such voltage producing circuit
JP2006500900A (ja) * 2002-09-20 2006-01-05 アトメル・コーポレーション バルクバイアスを備える負極性チャージポンプ
CN101867290A (zh) * 2010-06-17 2010-10-20 清华大学 低功耗电荷泵电路
CN103123801B (zh) * 2011-11-18 2016-03-30 智原科技股份有限公司 存储器装置及其负位线信号产生装置
CN104767383B (zh) * 2015-04-21 2017-07-14 苏州芯宽电子科技有限公司 一种低压四相位电荷泵升压电路
CN107306082B (zh) * 2016-04-18 2020-05-22 晶门科技（深圳）有限公司 电荷泵电路
JP6783879B2 (ja) * 2019-01-29 2020-11-11 ウィンボンド エレクトロニクス コーポレーション チャージポンプ回路

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8702734A (nl) * 1987-11-17 1989-06-16 Philips Nv Spanningsvermenigvuldigschakeling en gelijkrichtelement.
IT1221261B (it) * 1988-06-28 1990-06-27 Sgs Thomson Microelectronics Moltiplicatore di tensione omos
JP3307453B2 (ja) * 1993-03-18 2002-07-24 ソニー株式会社 昇圧回路
US5422586A (en) * 1993-09-10 1995-06-06 Intel Corporation Apparatus for a two phase bootstrap charge pump
TW271011B (es) * 1994-04-20 1996-02-21 Nippon Steel Corp

Also Published As

Publication number Publication date
WO1998033264A1 (de) 1998-07-30
UA52716C2 (uk) 2003-01-15
CN1245595A (zh) 2000-02-23
BR9714533A (pt) 2000-05-02
RU2189686C2 (ru) 2002-09-20
ATE204413T1 (de) 2001-09-15
CN1123110C (zh) 2003-10-01
KR100403825B1 (ko) 2003-11-01
EP0954896B1 (de) 2001-08-16
EP0954896A1 (de) 1999-11-10
JP3386141B2 (ja) 2003-03-17
KR20000069202A (ko) 2000-11-25
DE59704336D1 (de) 2001-09-20
JP2000508520A (ja) 2000-07-04

Similar Documents

Publication Publication Date Title
KR970051173A (ko) 승압펄스 발생회로
KR980005030A (ko) 승압된 백게이트 바이어스를 갖는 다단 승압 회로
DE69900372T2 (de) Versorgungsspannungsschalter
KR970013707A (ko) 레벨 시프트 반도체 장치
TW200607235A (en) Electric charge pump circuit
ES2163135T3 (es) Disposicion de circuito para generar tensiones negativas.
KR920020854A (ko) 백바이어스 발생회로
KR970029753A (ko) 승압 전원을 갖는 반도체 메모리 장치
KR970068169A (ko) 파워 손실을 절감할 수 있는 전압 감시 회로
KR910008863A (ko) 반도체 집적회로
KR910019310A (ko) 기준전압 발생회로
KR900011152A (ko) 전원전압 강하검파 및 초기화회로 재설정 회로
KR950028263A (ko) 전압 변환 회로
TW373319B (en) Back bias generator for semiconductor device and generation method therefor
KR940003011A (ko) 출력전압에 있어 전계효과트랜지스터의 한계치전압의 손실이 생기지 않는 전압발생회로
ATE139875T1 (de) Cmos-pufferschaltung
RU99118225A (ru) Схема для генерации отрицательных напряжений
WO1998052112A3 (en) Bias generator for a low current divider
KR880012006A (ko) Rc 시정수를 이용한 가변 클럭 지연회로
KR920010907A (ko) 자유 전하 회로
KR970008566A (ko) 반도체 집적회로
KR920001841A (ko) 파워 온 리셋트 회로
KR980006900A (ko) 고속 전압 변환 회로
KR970024546A (ko) 딜레이(delay) 회로
KR970055184A (ko) 저전압 cmos 트랜스컨덕턴스 장치

Legal Events

Date Code Title Description
FG2A Definitive protection

Ref document number: 954896

Country of ref document: ES