ES2022698B3 - Amplificador de sentido de doble fase para memorias de acceso aleatorias. - Google Patents

Amplificador de sentido de doble fase para memorias de acceso aleatorias.

Info

Publication number
ES2022698B3
ES2022698B3 ES88480005T ES88480005T ES2022698B3 ES 2022698 B3 ES2022698 B3 ES 2022698B3 ES 88480005 T ES88480005 T ES 88480005T ES 88480005 T ES88480005 T ES 88480005T ES 2022698 B3 ES2022698 B3 ES 2022698B3
Authority
ES
Spain
Prior art keywords
random access
access memories
phase direction
double phase
direction amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES88480005T
Other languages
English (en)
Inventor
Chekib Akrout
Pierre Coppens
Bernard Denis
Pierre-Yves Urena
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of ES2022698B3 publication Critical patent/ES2022698B3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/16—Multiple access memory array, e.g. addressing one storage element via at least two independent addressing line groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/065—Differential amplifiers of latching type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
ES88480005T 1988-02-26 1988-02-26 Amplificador de sentido de doble fase para memorias de acceso aleatorias. Expired - Lifetime ES2022698B3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP88480005A EP0329910B1 (en) 1988-02-26 1988-02-26 Double stage sense amplifier for random access memories

Publications (1)

Publication Number Publication Date
ES2022698B3 true ES2022698B3 (es) 1991-12-01

Family

ID=8200487

Family Applications (1)

Application Number Title Priority Date Filing Date
ES88480005T Expired - Lifetime ES2022698B3 (es) 1988-02-26 1988-02-26 Amplificador de sentido de doble fase para memorias de acceso aleatorias.

Country Status (7)

Country Link
US (1) US5023841A (es)
EP (1) EP0329910B1 (es)
JP (1) JPH0210593A (es)
BR (1) BR8900877A (es)
CA (1) CA1309148C (es)
DE (1) DE3863072D1 (es)
ES (1) ES2022698B3 (es)

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US5903169A (en) * 1996-07-24 1999-05-11 Lg Semicon Co., Ltd. Charge recycling differential logic (CRDL) circuit and storage elements and devices using the same
US5812474A (en) * 1996-10-18 1998-09-22 Mosel Vitelic Corporation I/O bias circuit insensitive to inadvertent power supply variations for MOS memory
US5821799A (en) * 1996-10-25 1998-10-13 Cypress Semiconductor Corporation Low voltage level shifting circuit and low voltage sense amplifier
US5737274A (en) * 1996-11-12 1998-04-07 Cypress Semiconductor Corporation Sense amplifier design
US5798972A (en) * 1996-12-19 1998-08-25 Mitsubishi Semiconductor America, Inc. High-speed main amplifier with reduced access and output disable time periods
US5751648A (en) * 1997-01-31 1998-05-12 International Business Machines Corporation Two stage sensing for large static memory arrays
US5768202A (en) * 1997-02-18 1998-06-16 Micron Technology, Inc. Fast sense amplifier for small voltage differences
US5982203A (en) * 1998-01-09 1999-11-09 International Business Machines Corporation Two stage SRCMOS sense amplifier
US5949722A (en) * 1998-04-16 1999-09-07 Mosel Vitelic I/O bias circuit insensitive to inadvertent power supply variations for MOS memory
US7124221B1 (en) 1999-10-19 2006-10-17 Rambus Inc. Low latency multi-level communication interface
US7161513B2 (en) * 1999-10-19 2007-01-09 Rambus Inc. Apparatus and method for improving resolution of a current mode driver
US7269212B1 (en) 2000-09-05 2007-09-11 Rambus Inc. Low-latency equalization in multi-level, multi-line communication systems
US6396329B1 (en) * 1999-10-19 2002-05-28 Rambus, Inc Method and apparatus for receiving high speed signals with low latency
KR100557935B1 (ko) * 1999-11-30 2006-03-10 주식회사 하이닉스반도체 고감도 데이터 신호 증폭 회로
US6434069B1 (en) * 2000-02-28 2002-08-13 United Memories, Inc. Two-phase charge-sharing data latch for memory circuit
US6473349B1 (en) 2001-11-29 2002-10-29 Motorola, Inc. Cascode sense AMP and column select circuit and method of operation
US8861667B1 (en) 2002-07-12 2014-10-14 Rambus Inc. Clock data recovery circuit with equalizer clock calibration
US7362800B1 (en) 2002-07-12 2008-04-22 Rambus Inc. Auto-configured equalizer
US7292629B2 (en) * 2002-07-12 2007-11-06 Rambus Inc. Selectable-tap equalizer
US7061793B2 (en) * 2004-03-19 2006-06-13 International Business Machines Corporation Apparatus and method for small signal sensing in an SRAM cell utilizing PFET access devices
US7888962B1 (en) 2004-07-07 2011-02-15 Cypress Semiconductor Corporation Impedance matching circuit
JP2006186445A (ja) * 2004-12-27 2006-07-13 Sanyo Electric Co Ltd フリップフロップ回路
EP1727147B1 (fr) 2005-05-23 2011-07-13 STMicroelectronics (Crolles 2) SAS Amplificateur de lecture pour mémoire dynamique
US8036846B1 (en) 2005-10-20 2011-10-11 Cypress Semiconductor Corporation Variable impedance sense architecture and method
JP4965883B2 (ja) * 2006-04-07 2012-07-04 株式会社東芝 半導体集積回路装置および半導体集積回路装置のトリミング方法
US7636264B2 (en) * 2007-02-09 2009-12-22 Atmel Corporation Single-ended sense amplifier for very low voltage applications
US7642815B2 (en) * 2007-09-14 2010-01-05 Atmel Corporation Sense amplifier
JP2010015614A (ja) * 2008-07-01 2010-01-21 Renesas Technology Corp 半導体装置
US7813201B2 (en) * 2008-07-08 2010-10-12 Atmel Corporation Differential sense amplifier
KR20100049192A (ko) * 2008-11-03 2010-05-12 삼성전자주식회사 비트라인 디스터브 방지부를 갖는 반도체 메모리 장치
JP4987896B2 (ja) 2009-03-18 2012-07-25 株式会社東芝 半導体記憶装置
CN102598140A (zh) * 2009-12-04 2012-07-18 拉姆伯斯公司 支持低存储器单元电容的dram读出放大器
US20120063211A1 (en) * 2010-09-13 2012-03-15 Imec Method for improving writability of sram memory
US8693264B2 (en) 2012-02-21 2014-04-08 Lsi Corporation Memory device having sensing circuitry with automatic latching of sense amplifier output node
US10074407B2 (en) * 2014-06-05 2018-09-11 Micron Technology, Inc. Apparatuses and methods for performing invert operations using sensing circuitry

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JPS5968889A (ja) * 1982-10-08 1984-04-18 Toshiba Corp 半導体記憶装置
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US4555777A (en) * 1984-08-14 1985-11-26 Texas Instruments Incorporated Sense amplifier circuit for dynamic read/write memory
JPS6171483A (ja) * 1984-09-12 1986-04-12 Sony Corp デイスクカ−トリツジ
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Also Published As

Publication number Publication date
EP0329910B1 (en) 1991-05-29
JPH0210593A (ja) 1990-01-16
EP0329910A1 (en) 1989-08-30
DE3863072D1 (de) 1991-07-04
BR8900877A (pt) 1989-10-17
CA1309148C (en) 1992-10-20
US5023841A (en) 1991-06-11

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