DE3850970T2 - Doppelstufiger bipolarer Abtastverstärker für BICMOS SRAMS mit einem "common base"-Verstärker in der Endstufe. - Google Patents
Doppelstufiger bipolarer Abtastverstärker für BICMOS SRAMS mit einem "common base"-Verstärker in der Endstufe.Info
- Publication number
- DE3850970T2 DE3850970T2 DE3850970T DE3850970T DE3850970T2 DE 3850970 T2 DE3850970 T2 DE 3850970T2 DE 3850970 T DE3850970 T DE 3850970T DE 3850970 T DE3850970 T DE 3850970T DE 3850970 T2 DE3850970 T2 DE 3850970T2
- Authority
- DE
- Germany
- Prior art keywords
- amplifier
- stage
- srams
- bicmos
- double
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/414—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the bipolar type
- G11C11/416—Read-write [R-W] circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP88480066A EP0365730B1 (de) | 1988-10-28 | 1988-10-28 | Doppelstufiger bipolarer Abtastverstärker für BICMOS SRAMS mit einem "common base"-Verstärker in der Endstufe |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3850970D1 DE3850970D1 (de) | 1994-09-08 |
DE3850970T2 true DE3850970T2 (de) | 1995-03-16 |
Family
ID=8200502
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3850970T Expired - Fee Related DE3850970T2 (de) | 1988-10-28 | 1988-10-28 | Doppelstufiger bipolarer Abtastverstärker für BICMOS SRAMS mit einem "common base"-Verstärker in der Endstufe. |
Country Status (4)
Country | Link |
---|---|
US (1) | US5172340A (de) |
EP (1) | EP0365730B1 (de) |
JP (1) | JPH02158998A (de) |
DE (1) | DE3850970T2 (de) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0469894A (ja) * | 1990-07-09 | 1992-03-05 | Fujitsu Ltd | 半導体記憶装置 |
JP2616198B2 (ja) * | 1990-10-01 | 1997-06-04 | 日本電気株式会社 | 半導体メモリ回路 |
JP2715004B2 (ja) * | 1991-01-07 | 1998-02-16 | 三菱電機株式会社 | 半導体メモリ装置 |
JP2939027B2 (ja) * | 1991-10-31 | 1999-08-25 | 三菱電機株式会社 | 半導体記憶装置 |
US5878269A (en) * | 1992-03-27 | 1999-03-02 | National Semiconductor Corporation | High speed processor for operation at reduced operating voltage |
US5341333A (en) * | 1992-08-11 | 1994-08-23 | Integrated Device Technology, Inc. | Circuits and methods for amplification of electrical signals |
US6492211B1 (en) | 2000-09-07 | 2002-12-10 | International Business Machines Corporation | Method for novel SOI DRAM BICMOS NPN |
KR100666181B1 (ko) * | 2005-12-27 | 2007-01-09 | 삼성전자주식회사 | 센스앰프 및 워드라인 드라이버 영역을 위한 면적을최소화하는 레이아웃을 가지는 반도체 메모리 장치 |
US7986189B1 (en) | 2010-04-29 | 2011-07-26 | Freescale Semiconductor, Inc. | Amplifier with feedback |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2460146C3 (de) * | 1974-12-19 | 1981-11-05 | Ibm Deutschland Gmbh, 7000 Stuttgart | Bipolare Leseschaltung für integrierte Speichermatrix |
DE2926514A1 (de) * | 1979-06-30 | 1981-01-15 | Ibm Deutschland | Elektrische speicheranordnung und verfahren zu ihrem betrieb |
JPS59914B2 (ja) * | 1979-08-23 | 1984-01-09 | 富士通株式会社 | 半導体記憶装置 |
JPS6028076B2 (ja) * | 1980-12-25 | 1985-07-02 | 富士通株式会社 | 半導体メモリの書込み回路 |
US4553053A (en) * | 1983-10-03 | 1985-11-12 | Honeywell Information Systems Inc. | Sense amplifier |
JPS628394A (ja) * | 1985-07-03 | 1987-01-16 | Hitachi Ltd | センス回路 |
JPS62117190A (ja) * | 1985-11-15 | 1987-05-28 | Hitachi Ltd | 半導体記憶装置 |
KR0141494B1 (ko) * | 1988-01-28 | 1998-07-15 | 미다 가쓰시게 | 레벨시프트회로를 사용한 고속센스 방식의 반도체장치 |
DE3863072D1 (de) * | 1988-02-26 | 1991-07-04 | Ibm | Zweistufiger leserverstaerker fuer ram-speicher. |
US4984196A (en) * | 1988-05-25 | 1991-01-08 | Texas Instruments, Incorporated | High performance bipolar differential sense amplifier in a BiCMOS SRAM |
-
1988
- 1988-10-28 DE DE3850970T patent/DE3850970T2/de not_active Expired - Fee Related
- 1988-10-28 EP EP88480066A patent/EP0365730B1/de not_active Expired - Lifetime
-
1989
- 1989-10-19 JP JP1270500A patent/JPH02158998A/ja active Granted
-
1991
- 1991-06-10 US US07/714,319 patent/US5172340A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0365730A1 (de) | 1990-05-02 |
DE3850970D1 (de) | 1994-09-08 |
US5172340A (en) | 1992-12-15 |
JPH0529994B2 (de) | 1993-05-06 |
JPH02158998A (ja) | 1990-06-19 |
EP0365730B1 (de) | 1994-08-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |