EP2070088A2 - Nicht flüchtige resistive speicher, sperrschaltungen und betriebsschaltungen mit skalierbaren nanoröhrchenschaltern mit zwei klemmen - Google Patents
Nicht flüchtige resistive speicher, sperrschaltungen und betriebsschaltungen mit skalierbaren nanoröhrchenschaltern mit zwei klemmenInfo
- Publication number
- EP2070088A2 EP2070088A2 EP07840800A EP07840800A EP2070088A2 EP 2070088 A2 EP2070088 A2 EP 2070088A2 EP 07840800 A EP07840800 A EP 07840800A EP 07840800 A EP07840800 A EP 07840800A EP 2070088 A2 EP2070088 A2 EP 2070088A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- state
- nanotube
- resistance
- volatile
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/20—Organic diodes
- H10K10/29—Diodes comprising organic-inorganic heterojunctions
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- G—PHYSICS
- G11—INFORMATION STORAGE
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- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
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- G11C13/0069—Writing or programming circuits or methods
- G11C2013/0076—Write operation performed depending on read result
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- G—PHYSICS
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- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
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- G11C2213/19—Memory cell comprising at least a nanowire and only two terminals
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- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
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- G11C2213/72—Array wherein the access device being a diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
- H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09159271A EP2104108A1 (de) | 2006-08-08 | 2007-08-08 | Nichtflüchtige resistive Speicher, Sperrschaltungen und Betriebsschaltungen mit skalierbaren Nanoröhrchenschaltern mit zwei Klemmen |
EP09159276A EP2104109A1 (de) | 2006-08-08 | 2007-08-08 | Nichtflüchtige resistive Speicher, Sperrschaltungen und Betriebsschaltungen mit skalierbaren Nanoröhrchenschaltern mit zwei Klemmen |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83634306P | 2006-08-08 | 2006-08-08 | |
US83643706P | 2006-08-08 | 2006-08-08 | |
US84058606P | 2006-08-28 | 2006-08-28 | |
US85510906P | 2006-10-27 | 2006-10-27 | |
US91838807P | 2007-03-16 | 2007-03-16 | |
PCT/US2007/075521 WO2008021912A2 (en) | 2006-08-08 | 2007-08-08 | Nonvolatile resistive memories, latch circuits, and operation circuits having scalable two-terminal nanotube switches |
Related Child Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP09159271A Division EP2104108A1 (de) | 2006-08-08 | 2007-08-08 | Nichtflüchtige resistive Speicher, Sperrschaltungen und Betriebsschaltungen mit skalierbaren Nanoröhrchenschaltern mit zwei Klemmen |
EP09159276A Division EP2104109A1 (de) | 2006-08-08 | 2007-08-08 | Nichtflüchtige resistive Speicher, Sperrschaltungen und Betriebsschaltungen mit skalierbaren Nanoröhrchenschaltern mit zwei Klemmen |
EP09159276.6 Division-Into | 2009-05-01 | ||
EP09159271.7 Division-Into | 2009-05-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2070088A2 true EP2070088A2 (de) | 2009-06-17 |
EP2070088A4 EP2070088A4 (de) | 2009-07-29 |
Family
ID=39082936
Family Applications (5)
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EP07840799A Withdrawn EP2057683A4 (de) | 2006-08-08 | 2007-08-08 | Speicherelemente und schnittpunktschalter sowie arrays davon mit nicht flüchtigen nanoröhrchenblöcken |
EP09159276A Withdrawn EP2104109A1 (de) | 2006-08-08 | 2007-08-08 | Nichtflüchtige resistive Speicher, Sperrschaltungen und Betriebsschaltungen mit skalierbaren Nanoröhrchenschaltern mit zwei Klemmen |
EP07840788A Active EP2057633B1 (de) | 2006-08-08 | 2007-08-08 | Nicht flüchtige nanoröhrchendioden und nicht flüchtige nanoröhrchenblöcke sowie systeme damit und herstellungsverfahren dafür |
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HK (2) | HK1137163A1 (de) |
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