EP2057683A4 - Speicherelemente und schnittpunktschalter sowie arrays davon mit nicht flüchtigen nanoröhrchenblöcken - Google Patents

Speicherelemente und schnittpunktschalter sowie arrays davon mit nicht flüchtigen nanoröhrchenblöcken

Info

Publication number
EP2057683A4
EP2057683A4 EP07840799A EP07840799A EP2057683A4 EP 2057683 A4 EP2057683 A4 EP 2057683A4 EP 07840799 A EP07840799 A EP 07840799A EP 07840799 A EP07840799 A EP 07840799A EP 2057683 A4 EP2057683 A4 EP 2057683A4
Authority
EP
European Patent Office
Prior art keywords
arrays
same
memory elements
cross point
nonvolatile nanotube
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07840799A
Other languages
English (en)
French (fr)
Other versions
EP2057683A2 (de
Inventor
Claude L Bertin
X M Henry Huang
Thomas Rueckes
Ramesh Sivarajan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nantero Inc
Original Assignee
Nantero Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc filed Critical Nantero Inc
Publication of EP2057683A2 publication Critical patent/EP2057683A2/de
Publication of EP2057683A4 publication Critical patent/EP2057683A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/86—Masking faults in memories by using spares or by reconfiguring in serial access memories, e.g. shift registers, CCDs, bubble memories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
    • H01L29/0669—Nanowires or nanotubes
    • H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/29—Diodes comprising organic-inorganic heterojunctions
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0076—Write operation performed depending on read result
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/19—Memory cell comprising at least a nanowire and only two terminals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/72—Array wherein the access device being a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
EP07840799A 2006-08-08 2007-08-08 Speicherelemente und schnittpunktschalter sowie arrays davon mit nicht flüchtigen nanoröhrchenblöcken Withdrawn EP2057683A4 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US83643706P 2006-08-08 2006-08-08
US83634306P 2006-08-08 2006-08-08
US84058606P 2006-08-28 2006-08-28
US85510906P 2006-10-27 2006-10-27
US91838807P 2007-03-16 2007-03-16
PCT/US2007/075520 WO2008021911A2 (en) 2006-08-08 2007-08-08 Memory elements and cross point switches and arrays of same using nonvolatile nanotube blocks

Publications (2)

Publication Number Publication Date
EP2057683A2 EP2057683A2 (de) 2009-05-13
EP2057683A4 true EP2057683A4 (de) 2010-03-10

Family

ID=39082936

Family Applications (5)

Application Number Title Priority Date Filing Date
EP07840800A Withdrawn EP2070088A4 (de) 2006-08-08 2007-08-08 Nicht flüchtige resistive speicher, sperrschaltungen und betriebsschaltungen mit skalierbaren nanoröhrchenschaltern mit zwei klemmen
EP07840788A Active EP2057633B1 (de) 2006-08-08 2007-08-08 Nicht flüchtige nanoröhrchendioden und nicht flüchtige nanoröhrchenblöcke sowie systeme damit und herstellungsverfahren dafür
EP07840799A Withdrawn EP2057683A4 (de) 2006-08-08 2007-08-08 Speicherelemente und schnittpunktschalter sowie arrays davon mit nicht flüchtigen nanoröhrchenblöcken
EP09159276A Withdrawn EP2104109A1 (de) 2006-08-08 2007-08-08 Nichtflüchtige resistive Speicher, Sperrschaltungen und Betriebsschaltungen mit skalierbaren Nanoröhrchenschaltern mit zwei Klemmen
EP09159271A Withdrawn EP2104108A1 (de) 2006-08-08 2007-08-08 Nichtflüchtige resistive Speicher, Sperrschaltungen und Betriebsschaltungen mit skalierbaren Nanoröhrchenschaltern mit zwei Klemmen

Family Applications Before (2)

Application Number Title Priority Date Filing Date
EP07840800A Withdrawn EP2070088A4 (de) 2006-08-08 2007-08-08 Nicht flüchtige resistive speicher, sperrschaltungen und betriebsschaltungen mit skalierbaren nanoröhrchenschaltern mit zwei klemmen
EP07840788A Active EP2057633B1 (de) 2006-08-08 2007-08-08 Nicht flüchtige nanoröhrchendioden und nicht flüchtige nanoröhrchenblöcke sowie systeme damit und herstellungsverfahren dafür

Family Applications After (2)

Application Number Title Priority Date Filing Date
EP09159276A Withdrawn EP2104109A1 (de) 2006-08-08 2007-08-08 Nichtflüchtige resistive Speicher, Sperrschaltungen und Betriebsschaltungen mit skalierbaren Nanoröhrchenschaltern mit zwei Klemmen
EP09159271A Withdrawn EP2104108A1 (de) 2006-08-08 2007-08-08 Nichtflüchtige resistive Speicher, Sperrschaltungen und Betriebsschaltungen mit skalierbaren Nanoröhrchenschaltern mit zwei Klemmen

Country Status (6)

Country Link
EP (5) EP2070088A4 (de)
JP (4) JP5394923B2 (de)
KR (3) KR101169499B1 (de)
HK (2) HK1137163A1 (de)
TW (3) TWI463673B (de)
WO (3) WO2008021912A2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9911743B2 (en) 2005-05-09 2018-03-06 Nantero, Inc. Nonvolatile nanotube diodes and nonvolatile nanotube blocks and systems using same and methods of making same
US8008745B2 (en) 2005-05-09 2011-08-30 Nantero, Inc. Latch circuits and operation circuits having scalable nonvolatile nanotube switches as electronic fuse replacement elements
US8102018B2 (en) 2005-05-09 2012-01-24 Nantero Inc. Nonvolatile resistive memories having scalable two-terminal nanotube switches
US7667999B2 (en) 2007-03-27 2010-02-23 Sandisk 3D Llc Method to program a memory cell comprising a carbon nanotube fabric and a steering element
US7982209B2 (en) 2007-03-27 2011-07-19 Sandisk 3D Llc Memory cell comprising a carbon nanotube fabric element and a steering element
WO2008118486A1 (en) * 2007-03-27 2008-10-02 Sandisk 3D, Llc Memory cell comprising a carbon nanotube fabric element and a steering element and methods of forming the same
JP5274799B2 (ja) * 2007-08-22 2013-08-28 ルネサスエレクトロニクス株式会社 半導体記憶装置
US8878235B2 (en) 2007-12-31 2014-11-04 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
US8558220B2 (en) 2007-12-31 2013-10-15 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US20090166610A1 (en) * 2007-12-31 2009-07-02 April Schricker Memory cell with planarized carbon nanotube layer and methods of forming the same
US8236623B2 (en) 2007-12-31 2012-08-07 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element and methods of forming the same
CN102067292B (zh) * 2008-04-11 2013-08-14 桑迪士克3D有限责任公司 用于蚀刻在非易失性存储器中使用的碳纳米管膜的方法
US8530318B2 (en) 2008-04-11 2013-09-10 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element formed over a bottom conductor and methods of forming the same
US8304284B2 (en) 2008-04-11 2012-11-06 Sandisk 3D Llc Memory cell that employs a selectively fabricated carbon nano-tube reversible resistance-switching element, and methods of forming the same
US8110476B2 (en) * 2008-04-11 2012-02-07 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods of forming the same
TW201001629A (en) * 2008-04-11 2010-01-01 Sandisk 3D Llc Memory cell that includes a carbon nano-tube reversible resistance-switching element and methods of forming the same
US8467224B2 (en) 2008-04-11 2013-06-18 Sandisk 3D Llc Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
US8569730B2 (en) 2008-07-08 2013-10-29 Sandisk 3D Llc Carbon-based interface layer for a memory device and methods of forming the same
US8309407B2 (en) 2008-07-15 2012-11-13 Sandisk 3D Llc Electronic devices including carbon-based films having sidewall liners, and methods of forming such devices
WO2010009364A1 (en) * 2008-07-18 2010-01-21 Sandisk 3D, Llc Carbon-based resistivity-switching materials and methods of forming the same
US8466044B2 (en) 2008-08-07 2013-06-18 Sandisk 3D Llc Memory cell that includes a carbon-based memory element and methods forming the same
US8835892B2 (en) 2008-10-30 2014-09-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having boron nitride-based liners, and methods of forming the same
US8421050B2 (en) 2008-10-30 2013-04-16 Sandisk 3D Llc Electronic devices including carbon nano-tube films having carbon-based liners, and methods of forming the same
KR20100052597A (ko) * 2008-11-11 2010-05-20 삼성전자주식회사 수직형 반도체 장치
US8183121B2 (en) * 2009-03-31 2012-05-22 Sandisk 3D Llc Carbon-based films, and methods of forming the same, having dielectric filler material and exhibiting reduced thermal resistance
TWI478358B (zh) * 2011-08-04 2015-03-21 Univ Nat Central A method of integrated AC - type light - emitting diode module
US9129894B2 (en) * 2012-09-17 2015-09-08 Intermolecular, Inc. Embedded nonvolatile memory elements having resistive switching characteristics
US9111611B2 (en) 2013-09-05 2015-08-18 Kabushiki Kaisha Toshiba Memory system
US9875332B2 (en) * 2015-09-11 2018-01-23 Arm Limited Contact resistance mitigation
JP2018186260A (ja) * 2017-04-25 2018-11-22 国立大学法人横浜国立大学 熱電発電デバイスおよび熱輸送デバイス
CN112151098A (zh) * 2019-06-27 2020-12-29 台湾积体电路制造股份有限公司 多熔丝记忆体单元电路
US11594269B2 (en) * 2020-06-19 2023-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. One time programmable (OTP) magnetoresistive random-access memory (MRAM)
KR20220168884A (ko) * 2021-06-17 2022-12-26 삼성전자주식회사 반도체 메모리 소자
US11881274B2 (en) * 2021-11-15 2024-01-23 Ememory Technology Inc. Program control circuit for antifuse-type one time programming memory cell array
US12063039B2 (en) * 2021-12-01 2024-08-13 Mediatek Inc. Register with data retention

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0036802A1 (de) * 1980-03-24 1981-09-30 COMMISSARIAT A L'ENERGIE ATOMIQUE Etablissement de Caractère Scientifique Technique et Industriel Verfahren zur Herstellung amorpher Halbleiter-Speicheranordnungen
JPS57113296A (en) * 1980-12-29 1982-07-14 Seiko Epson Corp Switching element
WO2006122111A2 (en) * 2005-05-09 2006-11-16 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US20070236325A1 (en) * 2004-09-21 2007-10-11 Nantero, Inc. Resistive elements using carbon nanotubes

Family Cites Families (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4256514A (en) 1978-11-03 1981-03-17 International Business Machines Corporation Method for forming a narrow dimensioned region on a body
US4442507A (en) 1981-02-23 1984-04-10 Burroughs Corporation Electrically programmable read-only memory stacked above a semiconductor substrate
USRE34363E (en) 1984-03-12 1993-08-31 Xilinx, Inc. Configurable electrical circuit having configurable logic elements and configurable interconnects
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US4944836A (en) 1985-10-28 1990-07-31 International Business Machines Corporation Chem-mech polishing method for producing coplanar metal/insulator films on a substrate
US4743569A (en) * 1987-04-20 1988-05-10 Texas Instruments Incorporated Two step rapid thermal anneal of implanted compound semiconductor
US4916087A (en) 1988-08-31 1990-04-10 Sharp Kabushiki Kaisha Method of manufacturing a semiconductor device by filling and planarizing narrow and wide trenches
US5005158A (en) * 1990-01-12 1991-04-02 Sgs-Thomson Microelectronics, Inc. Redundancy for serial memory
US5311039A (en) * 1990-04-24 1994-05-10 Seiko Epson Corporation PROM and ROM memory cells
US5096849A (en) 1991-04-29 1992-03-17 International Business Machines Corporation Process for positioning a mask within a concave semiconductor structure
US5536968A (en) 1992-12-18 1996-07-16 At&T Global Information Solutions Company Polysilicon fuse array structure for integrated circuits
DE4305119C2 (de) * 1993-02-19 1995-04-06 Eurosil Electronic Gmbh MOS-Speichereinrichtung zur seriellen Informationsverarbeitung
US5345110A (en) 1993-04-13 1994-09-06 Micron Semiconductor, Inc. Low-power fuse detect and latch circuit
JPH0729373A (ja) * 1993-07-08 1995-01-31 Mitsubishi Electric Corp 半導体記憶装置
US5818749A (en) * 1993-08-20 1998-10-06 Micron Technology, Inc. Integrated circuit memory device
US5670803A (en) 1995-02-08 1997-09-23 International Business Machines Corporation Three-dimensional SRAM trench structure and fabrication method therefor
US5546349A (en) 1995-03-13 1996-08-13 Kabushiki Kaisha Toshiba Exchangeable hierarchical data line structure
US5768196A (en) * 1996-03-01 1998-06-16 Cypress Semiconductor Corp. Shift-register based row select circuit with redundancy for a FIFO memory
US5831923A (en) 1996-08-01 1998-11-03 Micron Technology, Inc. Antifuse detect circuit
US5912937A (en) * 1997-03-14 1999-06-15 Xilinx, Inc. CMOS flip-flop having non-volatile storage
US6629190B2 (en) * 1998-03-05 2003-09-30 Intel Corporation Non-redundant nonvolatile memory and method for sequentially accessing the nonvolatile memory using shift registers to selectively bypass individual word lines
US6008523A (en) 1998-08-26 1999-12-28 Siemens Aktiengesellschaft Electrical fuses with tight pitches and method of fabrication in semiconductors
JP4658329B2 (ja) * 1999-02-12 2011-03-23 ボード オブ トラスティーズ，オブ ミシガン ステイト ユニバーシティ 帯電粒子を収容するナノカプセル、その用法及び形成法
EP1760797A1 (de) * 1999-03-25 2007-03-07 OVONYX Inc. Elektrisch programmierbares Speicherelement mit verbesserten Kontakten
JP3520810B2 (ja) * 1999-07-02 2004-04-19 日本電気株式会社 バックアップ機能を有するデータ保持回路
JP2002157880A (ja) 2000-11-15 2002-05-31 Matsushita Electric Ind Co Ltd 半導体記憶装置
US6750802B1 (en) 2001-02-09 2004-06-15 Richard Olen Remote controller with programmable favorite keys
US6570806B2 (en) 2001-06-25 2003-05-27 International Business Machines Corporation System and method for improving DRAM single cell fail fixability and flexibility repair at module level and universal laser fuse/anti-fuse latch therefor
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6924538B2 (en) 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US6706402B2 (en) * 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US6643165B2 (en) 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US7259410B2 (en) 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6574130B2 (en) 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
JP5165828B2 (ja) * 2002-02-09 2013-03-21 三星電子株式会社 炭素ナノチューブを用いるメモリ素子及びその製造方法
KR100450825B1 (ko) * 2002-02-09 2004-10-01 삼성전자주식회사 탄소나노튜브를 이용하는 메모리 소자 및 그 제조방법
US6624499B2 (en) 2002-02-28 2003-09-23 Infineon Technologies Ag System for programming fuse structure by electromigration of silicide enhanced by creating temperature gradient
US6889216B2 (en) * 2002-03-12 2005-05-03 Knowm Tech, Llc Physical neural network design incorporating nanotechnology
JP4660095B2 (ja) * 2002-04-04 2011-03-30 株式会社東芝 相変化メモリ装置
US6768665B2 (en) * 2002-08-05 2004-07-27 Intel Corporation Refreshing memory cells of a phase change material memory device
JP4141767B2 (ja) * 2002-08-27 2008-08-27 富士通株式会社 強誘電体キャパシタを使用した不揮発性データ記憶回路
JP4547852B2 (ja) * 2002-09-04 2010-09-22 富士ゼロックス株式会社 電気部品の製造方法
US6831856B2 (en) * 2002-09-23 2004-12-14 Ovonyx, Inc. Method of data storage using only amorphous phase of electrically programmable phase-change memory element
JP2004133969A (ja) * 2002-10-08 2004-04-30 Renesas Technology Corp 半導体装置
US7606059B2 (en) 2003-03-18 2009-10-20 Kabushiki Kaisha Toshiba Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array
US6944054B2 (en) * 2003-03-28 2005-09-13 Nantero, Inc. NRAM bit selectable two-device nanotube array
US7294877B2 (en) * 2003-03-28 2007-11-13 Nantero, Inc. Nanotube-on-gate FET structures and applications
US7335906B2 (en) * 2003-04-03 2008-02-26 Kabushiki Kaisha Toshiba Phase change memory device
US7095645B2 (en) * 2003-06-02 2006-08-22 Ambient Systems, Inc. Nanoelectromechanical memory cells and data storage devices
US7280394B2 (en) 2003-06-09 2007-10-09 Nantero, Inc. Field effect devices having a drain controlled via a nanotube switching element
JP2007502545A (ja) * 2003-08-13 2007-02-08 ナンテロ，インク． 複数の制御装置を有するナノチューブを基礎とする交換エレメントと上記エレメントから製造される回路
US7115960B2 (en) * 2003-08-13 2006-10-03 Nantero, Inc. Nanotube-based switching elements
US7416993B2 (en) 2003-09-08 2008-08-26 Nantero, Inc. Patterned nanowire articles on a substrate and methods of making the same
WO2005041204A1 (ja) * 2003-10-24 2005-05-06 Kanazawa University Technology Licensing Organization Ltd. 相変化型メモリ
KR100694426B1 (ko) * 2004-02-16 2007-03-12 주식회사 하이닉스반도체 나노 튜브 셀 및 이를 이용한 메모리 장치
EP1723676A4 (de) * 2004-03-10 2009-04-15 Nanosys Inc Speicherbausteine mit nano-fähigkeit und anisotrope ladungsträger-arrays
US6969651B1 (en) * 2004-03-26 2005-11-29 Lsi Logic Corporation Layout design and process to form nanotube cell for nanotube memory applications
US7161403B2 (en) * 2004-06-18 2007-01-09 Nantero, Inc. Storage elements using nanotube switching elements
US6955937B1 (en) * 2004-08-12 2005-10-18 Lsi Logic Corporation Carbon nanotube memory cell for integrated circuit structure with removable side spacers to permit access to memory cell and process for forming such memory cell
US7224598B2 (en) * 2004-09-02 2007-05-29 Hewlett-Packard Development Company, L.P. Programming of programmable resistive memory devices
TW200620473A (en) * 2004-09-08 2006-06-16 Renesas Tech Corp Nonvolatile memory device
EP1807919A4 (de) 2004-11-02 2011-05-04 Nantero Inc Nanoröhrchenvorrichtungen zum schutz vor elektrostatischer entladung und enstprechende nichtflüchtige und flüchtige nanoröhrchenschalter
US7208372B2 (en) * 2005-01-19 2007-04-24 Sharp Laboratories Of America, Inc. Non-volatile memory resistor cell with nanotip electrode
KR100682925B1 (ko) * 2005-01-26 2007-02-15 삼성전자주식회사 멀티비트 비휘발성 메모리 소자 및 그 동작 방법
US7394687B2 (en) * 2005-05-09 2008-07-01 Nantero, Inc. Non-volatile-shadow latch using a nanotube switch
TWI324773B (en) * 2005-05-09 2010-05-11 Nantero Inc Non-volatile shadow latch using a nanotube switch
JP4843760B2 (ja) * 2005-12-26 2011-12-21 株式会社発明屋 カーボンナノチューブを用いた記憶素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0036802A1 (de) * 1980-03-24 1981-09-30 COMMISSARIAT A L'ENERGIE ATOMIQUE Etablissement de Caractère Scientifique Technique et Industriel Verfahren zur Herstellung amorpher Halbleiter-Speicheranordnungen
JPS57113296A (en) * 1980-12-29 1982-07-14 Seiko Epson Corp Switching element
US20070236325A1 (en) * 2004-09-21 2007-10-11 Nantero, Inc. Resistive elements using carbon nanotubes
WO2006122111A2 (en) * 2005-05-09 2006-11-16 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PRADHAN B ET AL: "Electrical bistability and memory phenomenon in carbon nanotube-conjugated polymer matrixes", JOURNAL OF PHYSICAL CHEMISTRY. B, MATERIALS, SURFACES, INTERFACES AND BIOPHYSICAL, WASHINGTON, DC, US, vol. 110, 27 April 2006 (2006-04-27), pages 8274 - 8277, XP007908929, ISSN: 1089-5647 *

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