EP1230414B1 - Verfahren und vorrichtung zur plasmabeschichtung von oberflächen - Google Patents
Verfahren und vorrichtung zur plasmabeschichtung von oberflächen Download PDFInfo
- Publication number
- EP1230414B1 EP1230414B1 EP00926739A EP00926739A EP1230414B1 EP 1230414 B1 EP1230414 B1 EP 1230414B1 EP 00926739 A EP00926739 A EP 00926739A EP 00926739 A EP00926739 A EP 00926739A EP 1230414 B1 EP1230414 B1 EP 1230414B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- plasma jet
- nozzle
- precursor material
- plasma
- precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
Definitions
- the invention relates to a method for coating Surfaces with the characteristics of the generic term of Claim 1.
- the invention also relates to a device for coating surfaces with the characteristics of Claim 7.
- DE 198 07 086 A discloses one method and one Device for plasma coating of surfaces, wherein in the excitation zone between two electrodes, one of which at least one is provided with a dielectric, one Corona discharge is ignited. This type of discharge is also known as a tuft of sparks. The corona discharge avoids unwanted hot discharge or arc discharge between the electrodes to destroy the electrodes or the substrate to be coated or the to prevent deposited layer.
- W099 / 20809 also discloses a method and a Device for coating surfaces in which Help of a radio frequency discharge that deliberately a Discharge arc avoids the working gas being excited in which feeds the precursor material downstream becomes.
- the present invention has the technical problem based on a procedure of the type mentioned at the beginning create that with simple process control an efficient and easily controllable coating, and a expedient device for performing this method specify.
- the atmospheric plasma in the shape of a beam is generated, which is essential has a greater range than the discharge zone of one Corona discharge, the coating process simply run by the surface to be coated the substrate is covered with the plasma jet. There no counter electrode on the back of the substrate is required, the substrates can also be act thicker and / or complex shaped workpieces. Since that Precursor material supplied separately from the working gas and in the plasma jet is fed, which only in the Excitation zone arises, needs the precursor material not to cross the entire excitation zone itself. This has the important advantage that it mostly consists of monomers Connections existing precursor material is not already in decomposes in the excitation zone or chemically in some other way is changed.
- the necessary excitation energies for the desired one Reaction of the monomers is primarily through free electrons, Ions or radicals are still provided in large numbers in the cool plasma jet are included.
- the precursor material does not necessarily need to be in the gaseous state to be fed in, but can also, for example, in liquid or solid, powdery state can be fed so that it is only in the reaction zone evaporates or sublimates. It is also possible to use the precursor material add solid particles such as color pigments or the like, which then in the embedded polymer-like layer on the substrate surface become. In this way, the color, the roughness or the electrical Adjust the conductivity of the coating as required.
- the Venturi effect can be exploited to get the precursor material into the plasma jet to suck.
- the precursor material is actively supplied, can by choosing the angle at which the precursor material is relative to The beam direction of the plasma jet is fed in, the extent of the mixing of the precursor material in the plasma.
- the feed of the precursor material can take place in the same direction or opposite to the direction of swirl.
- this temperature can be achieved, for example, by heating the working gas and / or precisely by heating the mouth of the plasma nozzle.
- a plasma nozzle can be used to generate the plasma jet are, as described - for other purposes - in DE 195 32 412 C2 becomes.
- a plasma nozzle can be used to generate the plasma jet are, as described - for other purposes - in DE 195 32 412 C2 becomes.
- a plasma nozzle can be used to generate the plasma jet are, as described - for other purposes - in DE 195 32 412 C2 becomes.
- a plasma nozzle can be used to generate the plasma jet are, as described - for other purposes - in DE 195 32 412 C2 becomes.
- EP-A 986 993 eccentrically on a rotary head
- the plasma nozzle shown in FIG. 1 has a tubular housing 10, the one elongated nozzle channel 12, which tapers conically at the lower end forms.
- An electrically insulating ceramic tube 14 is inserted in the nozzle channel 12.
- a working gas, such as air, is from the top in the drawing End her fed into the nozzle channel 12 and with the help of one in the ceramic tube 14 used swirl device 16 so that it is vortex-shaped flows through the nozzle channel 12, as in the drawing by a helical Arrow is symbolized.
- a vortex core is thus created in the nozzle channel 12, which runs along the axis of the housing.
- a pin-shaped electrode 18 is mounted on the swirl device 16 protrudes coaxially into the nozzle channel 12 and to the with the help of a high voltage generator 20 a high-frequency AC voltage is applied.
- the voltage generated by the high-frequency generator 20 is of the order of magnitude of a few kilovolts and has a frequency of the order of magnitude, for example from 20 kilo heart.
- the metal housing 10 is grounded and serves as a counter electrode, so that an electrical discharge between the electrode 18 and the housing 10 can be caused.
- This corona discharge an arc discharge from the electrode 18 to the housing 10 is ignited.
- the Arc 22 of this discharge is swirled by the working gas flowing in taken and channeled in the core of the vortex-shaped gas flow, see above that the arc is then almost rectilinear from the tip of the electrode 18th runs along the housing axis and is only in the area of the mouth of the housing 10 branches radially onto the housing wall.
- the housing 10 at the tapered end of the nozzle channel 12 a radially inward projecting shoulder 24, which forms the actual counter electrode and the radially branching branches of the arc 22.
- the branches rotate thereby in the swirl direction of the gas flow, so that a non-uniform erosion on the shoulder 24 is avoided.
- a cylindrical mouthpiece 26 made of ceramic used In the mouth of the housing 10 is a cylindrical mouthpiece 26 made of ceramic used, the axially inner end of which is flush with the shoulder 24 and is directly surrounded by this shoulder and its length is significantly greater is than the inside diameter.
- the plasma generated by the arc 22 flows in a swirling manner through the mouthpiece 26 and becomes thermal due to Expansion when flowing through the mouthpiece 26 accelerated and radial expanded so that you get a very strongly fan-shaped expanded plasma jet 28 receives, which is still a few centimeters above the open end 30 of the Mouthpiece 26 extends and rotates in the direction of swirl.
- This plasma nozzle is used for plasma coating or plasma polymerization of a Substrate 34 used. To do this, the precursor material is removed using a Lance 32 is fed into the concentrated plasma jet inside the mouthpiece 26.
- a mouthpiece 26 ' is inserted here, which is a Venturi nozzle 36 forms for the self-priming feed of the precursor material.
- the precursor material is first of all in a ring chamber via a nozzle 38 40 fed to the outer circumference of the mouthpiece 26 'and arrives from there radially through one or more holes in Venturi 36.
- the feed location is therefore located at the downstream end of the excitation zone, in which is generated by the plasma beam 28 'and by the arc 22 penetrated nozzle channel 12 is formed.
- the Venturi nozzle 36 opens into a transverse channel 42, which at both ends in another, on the circumference of the mouthpiece 26 'formed ring channel 44 and opens over a narrow, in the direction of a Diameter of the mouthpiece extending groove 46 to the end face of the mouthpiece is open. That emerging from the venturi 36 with the precursor gas mixed plasma is distributed in the transverse channel 42 and then passes far fanned out through the groove 46. In this way, a uniform coating can be achieved on a strip-shaped surface of the substrate, not shown here achieve.
- FIG. 4 shows the mouth region of a plasma nozzle, with which a rotationally symmetrical, relatively sharply focused plasma beam 28 "generated becomes.
- the mouthpiece 26 "forms a proportionate small circular nozzle opening 48.
- the feed of the precursor material takes place again via a lance 32, but here only downstream of the nozzle opening 48 opens into the plasma jet 28 ".
- This type of feed is below other advantageous in cases where the precursor material is carbon or contains other substances that lead to the formation of electrically conductive precipitates tend.
- FIG. 4 also illustrates a method variant in which the plasma jet 28 "with the aid of a gassing nozzle concentrically surrounding the nozzle opening 48 50 is gassed with a protective gas 52.
- FIG. 5 illustrates a method variant in which the feed of the precursor material with the help of an insulating tube 54 coaxially through the interior of the housing 10 and the electrode 18.
- This arrangement has due to their perfect symmetry the advantage that a uniform Distribution of the precursor material in the plasma jet 28 "is achieved.
- the feed location of the precursor material depending on the material and process conditions vary by advancing or retracting tube 54 becomes.
- the tube 54 can also be withdrawn as far as that the feed is within the downstream third of the nozzle channel 12 takes place.
- the plasma jet 28 "by touching the working gas with the Arc 22 is generated, which here is helical around the tube 54 winds, can also in the downstream region of the nozzle channel 12 of a plasma jet can be spoken, so that in this case the feed still done in the plasma jet.
- the process the precursor material due to the constriction of the Plasma in the mouth area of the nozzle generally somewhat higher temperatures get abandoned. Under certain circumstances, a - small - proportion of the precursor material can also be destroyed by direct contact with the arc 22. However, this can also have a positive effect, as it does for certain Components of the precursor material high excitation energies are available.
- a comparable effect can thereby be achieved with the plasma nozzle shown in FIG achieve that the throughput and / or swirl of the working gas is increased.
- the branches of the arc 22 that are on the walls of the housing 10 and the mouthpiece 26 'branch deeper into the Venturi 36 penetrate and optionally loop-shaped from the nozzle opening "blown out" so that a more or less large part of the supplied precursor gas comes into contact with the arc.
- the precursor material is fed together with the substrate into the plasma jet, for example by the precursor material z.
- the precursor material is fed together with the substrate into the plasma jet, for example by the precursor material z.
- B. by means of aerosol or ultrasound, by vapor deposition, by spraying, rolling or knife coating or electrostatically on the surface of the substrate is applied before this surface with the plasma jet is treated.
Description
- Fig.1
- einen axialen Schnitt durch eine Plasmadüse zur Ausführung des erfindungsgemäßen Verfahrens gemäß einer ersten Ausführungsform;
- Fig.2
- einen Schnitt durch eine Plasmadüse gemäß einer zweiten Ausführungs form;
- Fig. 3
- einen Teilschnitt durch den Düsenkopf der Plasmadüse gemäß Figur 2 in einer zu Figur 2 rechtwinkligen Schnittebene;
- Fig. 4
- einen Schnitt durch den Kopf einer Plasmadüse gemäß einer dritten Ausführungsform;
- Fig. 5
- einen Schnitt durch eine Plasmadüse gemäß einer vierten Ausführungs form.
Claims (13)
- Verfahren zur Beschichtung von Oberflächen,bei dem durch Hindurchleiten eines Arbeitsgases durch eine Anregungszone (12) ein Plasmastrahl (28;28',28") erzeugt wird,bei dem ein Precursormaterial getrennt vom Arbeitsgas in den Plasmastrahl eingespeist wird,bei dem mit Hilfe des Plasmastrahls das Precursormaterial zur Reaktion gebracht undbei dem das Reaktionsprodukt auf der Oberfläche (34) abgeschieden wird,wobei sowohl die Reaktion als auch das Abscheiden unter Atmospnärendruck erfolgen,dass durch Anlegen einer hochfrequenten Wechselspannung an innerhalb der Anregungszone angeordneten Elektroden (10, 18) eine Bogenentladung erzeugt wird.
- Verfahren nach Anspruch 1,
dadurch gekennzeichnet, dass das Precursormaterial in dem Zustand in dem es in den Plasmastrahl eingespeist wird, flüssige und/oder feste Bestandteile enthält. - Verfahren nach Anspruchl oder 2,
dadurch gekennzeichnet, dass das Precursormaterial in eine Auslassöffnung (36;48) injiziert wird, durch welche der Plasmastrahl die Anregungszone (12) verlässt. - Verfahren nach Anspruch 3,
dadurch gekennzeichnet, dass das Precursorgas unter Ausnutzung des Venturi-Effektes in die als Venturidüse (36) ausgebildete Auslassöffnung zugeführt wird. - Verfahren nach Anspruch 1 oder 2,
dadurch gekennzeichnet, dass das Precursormaterial stroma bwärts einer Auslassöffnung (48), durch welche der Plasmastrahl (28') die Anregungszone (12) verlässt, in den Plasmastrahl injiziert wird. - Verfahren nach Anspruch 1 oder 2,
dadurch gekennzeichnet, dass das Precursormaterial im stromabwärtigen Bereich der Anregungszone (12) in den dort entstehenden Plasmastrahl injiziert wird. - Vorrichtung zur Beschichtung von Oberflächen (34),mit einem rohrförmigen, elektrisch leitfähigen, einen Düsenkanal (12) bildenden Gehäuse (10),mit einer koaxial im Düsenkanal (12) angeordneten Elektrode (18), undmit einer Zufuhreinrichtung (32;36,38,40) zur Zufuhr eines Precursormaterials in den Plasmastrahl,dass ein Hochfrequenzgenerator zum Anlegen einer Wechselspannung zwischen der Elektrode (18) und dem Gehäuse (10) zum Erzeugen einer Bogenentladung vorgesehen ist.
- Vorrichtung nach Anspruch 7,
dadurch gekennzeichnet, dass das Gehäuse (10) eine Dralleinrichtung (16) zum Verdrallen des Arbeitsgases in dem Düsenkanal (12) enthält. - Vorrichtung nach Anspruch 7 oder 8,
dadurch gekennzeichnet, dass die Zufuhreinrichtung für das Precursorgas eine Lanze (32) ist, die stromabwärts des Auslasses des Düsenkanals (12) in den Plasmastrahl mündet. - Vorrichtung nach Anspruch 9,
dadurch gekennzeichnet, dass in den Auslass des Düsenkanals (12) einrohrförmiges Mundstück (26) aus elektrisch isolierendem Material eingesetzt ist und dass die Lanze (32) in dem Mundstück (26) mündet. - Vorrichtung nach Anspruch 7 oder 8,
dadurch gekennzeichnet, dass die Zufuhreinrichtung für das Precursormaterial eine im Auslass des Düsenkanals (12) ausgebildete Venturidüse (36) ist. - Vorrichtung nach Anspruch 7 oder 8,
dadurch gekennzeichnet, dass die Zufuhreinrichtung für das Precursorgas ein koaxial durch die Plasmadüse verlaufendes elektrisch isolierendes Röhrchen (54) ist, dessen Mündung wahlweise innerhalb oder außerhalb des Düsenkanals (12) liegen kann. - Vorrichtung nach einem der Ansprüche 7 bis 12,
dadurch gekennzeichnet, dass eine den Auslass der Plasmadüse (10) umgebende Schutzgasdüse (50) zum Begasen des austretenden Plasmastrahls mit einem Schutzgas (52) vorgesehen ist.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE29919142U | 1999-10-30 | ||
DE29919142U DE29919142U1 (de) | 1999-10-30 | 1999-10-30 | Plasmadüse |
PCT/EP2000/002401 WO2001032949A1 (de) | 1999-10-30 | 2000-03-17 | Verfahren und vorrichtung zur plasmabeschichtung von oberflächen |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1230414A1 EP1230414A1 (de) | 2002-08-14 |
EP1230414B1 true EP1230414B1 (de) | 2004-10-06 |
Family
ID=8081000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP00926739A Expired - Lifetime EP1230414B1 (de) | 1999-10-30 | 2000-03-17 | Verfahren und vorrichtung zur plasmabeschichtung von oberflächen |
Country Status (7)
Country | Link |
---|---|
US (1) | US6800336B1 (de) |
EP (1) | EP1230414B1 (de) |
JP (1) | JP4082905B2 (de) |
AT (1) | ATE278817T1 (de) |
DE (2) | DE29919142U1 (de) |
ES (1) | ES2230098T3 (de) |
WO (1) | WO2001032949A1 (de) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008029681A1 (de) | 2008-06-23 | 2009-12-24 | Plasma Treat Gmbh | Verfahren und Vorrichtung zum Aufbringen einer Schicht, insbesondere einer selbstreinigend und/oder antimikrobiell wirkenden photokatalytischen Schicht, auf eine Oberfläche |
DE102008058783A1 (de) | 2008-11-24 | 2010-05-27 | Plasmatreat Gmbh | Verfahren zur atmosphärischen Beschichtung von Nanooberflächen |
DE102009048397A1 (de) * | 2009-10-06 | 2011-04-07 | Plasmatreat Gmbh | Atmosphärendruckplasmaverfahren zur Herstellung oberflächenmodifizierter Partikel und von Beschichtungen |
WO2012123530A1 (de) | 2011-03-16 | 2012-09-20 | Reinhausen Plasma Gmbh | Beschichtung sowie verfahren und vorrichtung zum beschichten |
WO2013014212A2 (de) | 2011-07-25 | 2013-01-31 | Eckart Gmbh | Verfahren zum aufbringen einer beschichtung auf einem substrat, beschichtung und verwendung von partikeln |
TWI384085B (zh) * | 2009-05-07 | 2013-02-01 | Univ Kao Yuan | 往復式雙段噴射常壓電漿鍍膜系統 |
EP2644739A1 (de) | 2012-03-29 | 2013-10-02 | BSH Bosch und Siemens Hausgeräte GmbH | Verfahren zum Passivieren einer Metalloberfläche und Haushaltsgerät, insbesondere Haushaltsgeschirrspülmaschine mit einem Wandungsteil |
DE102012102721A1 (de) | 2012-03-29 | 2013-10-02 | BSH Bosch und Siemens Hausgeräte GmbH | Verfahren zum Passivieren einer Metalloberfläche |
WO2015055486A1 (de) | 2013-10-14 | 2015-04-23 | Plasma Innovations GmbH | Herstellungsverfahren für einen plasmabeschichteten formkörper und bauteil |
DE102014219979A1 (de) | 2014-10-01 | 2016-04-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verbund aus Substrat, plasmapolymerer Schicht, Mischschicht und Deckschicht |
DE102015121253A1 (de) | 2015-12-07 | 2017-06-08 | Plasmatreat Gmbh | Vorrichtung zum Erzeugen eines atmosphärischen Plasmastrahls zur Behandlung der Oberfläche eines Werkstücks |
DE102016101456A1 (de) | 2016-01-27 | 2017-07-27 | Plasmatreat Gmbh | Spritzgussbauteil mit Einlegeteil, Verfahren zu dessen Herstellung und Verwendungen dafür |
WO2017129582A1 (de) | 2016-01-27 | 2017-08-03 | Plasmatreat Gmbh | Spritzgussbauteil mit einlegeteil, verfahren zu dessen herstellung und verwendungen dafür |
DE102016104130A1 (de) | 2016-03-07 | 2017-09-07 | Plasmatreat Gmbh | Verfahren zum Beschichten einer Bauteiloberfläche sowie Verfahren zur Herstellung eines Beschichtungsmaterials |
DE102016104128A1 (de) | 2016-03-07 | 2017-09-07 | Plasmatreat Gmbh | Verfahren zum Beschichten einer Bauteiloberfläche, beschichtetes Bauteil und Verwendung eines Precursormaterials |
DE102017122059A1 (de) * | 2017-09-22 | 2019-03-28 | Plasma Innovations GmbH | Verfahren zur Herstellung einer Endoberfläche und Leiterplatte |
WO2021023605A1 (de) | 2019-08-08 | 2021-02-11 | Plasmatreat Gmbh | Verfahren zum ausrüsten eines elektronischen displays mit einer displayschutzscheibe |
WO2024068623A1 (de) | 2022-09-29 | 2024-04-04 | Plasmatreat Gmbh | Plasmabehandlung mit flüssigkeitskühlung |
DE102023106618A1 (de) | 2022-09-29 | 2024-04-04 | Plasmatreat Gmbh | Plasmabehandlung mit Flüssigkeitskühlung |
Families Citing this family (240)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1170066A1 (de) | 2000-07-05 | 2002-01-09 | Förnsel, Peter | Verfahren und Vorrichtung zum Reinigen von Walzen oder Bänder |
BR0114200B1 (pt) * | 2000-10-04 | 2011-05-03 | "método e aparelho para a formação de um revestimento em um substrato". | |
DE10061828B4 (de) * | 2000-12-12 | 2011-03-31 | Plasmatreat Gmbh | Verfahren zum Einbringen von Material in einen Plasmastrahl und Plasmadüse zur Durchführung des Verfahrens |
JP4678973B2 (ja) * | 2001-03-29 | 2011-04-27 | 西日本プラント工業株式会社 | 溶射トーチのプラズマアークの発生装置及び発生方法 |
DE10145131B4 (de) * | 2001-09-07 | 2004-07-08 | Pva Tepla Ag | Vorrichtung zum Erzeugen eines Aktivgasstrahls |
JP4923364B2 (ja) * | 2001-09-10 | 2012-04-25 | 株式会社安川電機 | 反応性ガス発生装置 |
US6841201B2 (en) * | 2001-12-21 | 2005-01-11 | The Procter & Gamble Company | Apparatus and method for treating a workpiece using plasma generated from microwave radiation |
TW200409669A (en) * | 2002-04-10 | 2004-06-16 | Dow Corning Ireland Ltd | Protective coating composition |
GB0208261D0 (en) * | 2002-04-10 | 2002-05-22 | Dow Corning | An atmospheric pressure plasma assembly |
TW200308187A (en) * | 2002-04-10 | 2003-12-16 | Dow Corning Ireland Ltd | An atmospheric pressure plasma assembly |
NL1020923C2 (nl) * | 2002-06-21 | 2003-12-23 | Otb Group Bv | Werkwijze alsmede inrichting voor het vervaardigen van een katalysator. |
DE60308640T2 (de) * | 2002-08-14 | 2007-08-09 | Limited Company "Proton-21" | Verfahren und vorrichtung zum schlag-verdichten eines stoffes und plasmakathode dazu |
US20040175498A1 (en) * | 2003-03-06 | 2004-09-09 | Lotfi Hedhli | Method for preparing membrane electrode assemblies |
US8586149B2 (en) * | 2003-06-18 | 2013-11-19 | Ford Global Technologies, Llc | Environmentally friendly reactive fixture to allow localized surface engineering for improved adhesion to coated and non-coated substrates |
JP3871055B2 (ja) * | 2003-08-01 | 2007-01-24 | 株式会社ハイデン研究所 | プラズマ発生方法及びプラズマ発生装置 |
CH696811A5 (de) * | 2003-09-26 | 2007-12-14 | Michael Dvorak Dr Ing Dipl Phy | Verfahren zur Beschichtung einer Substratoberfläche unter Verwendung eines Plasmastrahles. |
GB0323295D0 (en) * | 2003-10-04 | 2003-11-05 | Dow Corning | Deposition of thin films |
EP1714279A2 (de) * | 2004-02-13 | 2006-10-25 | PlasmaTreat GmbH | Verfahren zum beschichten eines optischen datenträgers sowie ein beschichteter optischer datenträger |
US20050230350A1 (en) * | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
US20080280065A1 (en) * | 2004-04-09 | 2008-11-13 | Peter Fornsel | Method and Device for Generating a Low-Pressure Plasma and Applications of the Low-Pressure Plasma |
US7122949B2 (en) * | 2004-06-21 | 2006-10-17 | Neocera, Inc. | Cylindrical electron beam generating/triggering device and method for generation of electrons |
JP2006114450A (ja) * | 2004-10-18 | 2006-04-27 | Yutaka Electronics Industry Co Ltd | プラズマ生成装置 |
EP1807548A2 (de) * | 2004-10-29 | 2007-07-18 | Dow Gloval Technologies Inc. | Abriebfeste beschichtungen durch plasmaverstärkte chemiedampfabscheidung |
GB0424532D0 (en) * | 2004-11-05 | 2004-12-08 | Dow Corning Ireland Ltd | Plasma system |
WO2006048649A1 (en) * | 2004-11-05 | 2006-05-11 | Dow Corning Ireland Limited | Plasma system |
JP4494942B2 (ja) * | 2004-11-19 | 2010-06-30 | 積水化学工業株式会社 | プラズマ処理装置 |
DE102005004280A1 (de) | 2005-01-28 | 2006-08-03 | Degussa Ag | Verfahren zur Herstellung eines Verbundes |
US20060172081A1 (en) * | 2005-02-02 | 2006-08-03 | Patrick Flinn | Apparatus and method for plasma treating and dispensing an adhesive/sealant onto a part |
JP4817407B2 (ja) * | 2005-03-07 | 2011-11-16 | 学校法人東海大学 | プラズマ発生装置及びプラズマ発生方法 |
EP1871921B1 (de) * | 2005-03-22 | 2021-04-28 | Erbslöh Aluminium GmbH | Verfahren zur partiellen oder vollständigen beschichtung der oberflächen von bauteilen aus aluminiummaterial |
DE102005013729A1 (de) * | 2005-03-22 | 2006-10-12 | Erbslöh Aluminium Gmbh | Bauteil aus Aluminiummaterial mit einer partiellen oder vollständigen Beschichtung der Oberflächen für die Hartverlötung und Verfahren zur Herstellung der Beschichtung |
DE102005018926B4 (de) | 2005-04-22 | 2007-08-16 | Plasma Treat Gmbh | Verfahren und Plasmadüse zum Erzeugen eines mittels hochfrequenter Hochspannung erzeugten atmosphärischen Plasmastrahls umfassend eine Vorrichtung jeweils zur Charakterisierung einer Oberfläche eines Werkstückes |
GB0509648D0 (en) * | 2005-05-12 | 2005-06-15 | Dow Corning Ireland Ltd | Plasma system to deposit adhesion primer layers |
US7517561B2 (en) * | 2005-09-21 | 2009-04-14 | Ford Global Technologies, Llc | Method of coating a substrate for adhesive bonding |
CN100372616C (zh) * | 2005-10-12 | 2008-03-05 | 吴德明 | 涂料表面制造工艺 |
US8945684B2 (en) * | 2005-11-04 | 2015-02-03 | Essilor International (Compagnie Generale D'optique) | Process for coating an article with an anti-fouling surface coating by vacuum evaporation |
DE102005059706B4 (de) * | 2005-12-12 | 2011-08-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 | Verfahren zum Herstellen einer Trennschicht sowie Substratoberfläche mit Trennschicht |
TW200740306A (en) * | 2006-04-03 | 2007-10-16 | Yueh-Yun Kuo | Low temperature normal pressure non-equilibrium plasma jet electrode component |
DE102006024050B4 (de) * | 2006-05-23 | 2009-08-20 | Daimler Ag | Vorrichtung zum Aufbringen einer Beschichtung auf eine Oberfläche eines Werkstückes |
JP4890946B2 (ja) * | 2006-05-31 | 2012-03-07 | 積水化学工業株式会社 | プラズマ処理装置 |
US7547861B2 (en) * | 2006-06-09 | 2009-06-16 | Morten Jorgensen | Vortex generator for plasma treatment |
US20070284342A1 (en) * | 2006-06-09 | 2007-12-13 | Morten Jorgensen | Plasma treatment method and apparatus |
US7744984B2 (en) * | 2006-06-28 | 2010-06-29 | Ford Global Technologies, Llc | Method of treating substrates for bonding |
DE102006038780A1 (de) * | 2006-08-18 | 2008-02-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zum Herstellen einer Beschichtung |
ES2534215T3 (es) * | 2006-08-30 | 2015-04-20 | Oerlikon Metco Ag, Wohlen | Dispositivo de pulverización de plasma y un método para la introducción de un precursor líquido en un sistema de gas de plasma |
EP1895818B1 (de) | 2006-08-30 | 2015-03-11 | Sulzer Metco AG | Plasmazerstäubungsvorrichtung und Verfahren zur Einführung eines Flüssigkeitsvorläufers in ein Plasmagassystem |
TW200814170A (en) * | 2006-09-13 | 2008-03-16 | Ind Tech Res Inst | Method of adjusting surface characteristic of a substrate |
EP2092590A4 (de) * | 2006-11-10 | 2011-01-12 | Univ California | Atmosphärendruckplasmainduzierte pfropfpolymerisation |
DE202007018327U1 (de) | 2006-11-23 | 2008-08-07 | Plasmatreat Gmbh | Vorrichtung zum Erzeugen eines Plasmas |
US20080138532A1 (en) * | 2006-12-12 | 2008-06-12 | Ford Global Technologies, Llc | Method for decorating a plastic component with a coating |
US7981219B2 (en) * | 2006-12-12 | 2011-07-19 | Ford Global Technologies, Llc | System for plasma treating a plastic component |
DE102007011235A1 (de) | 2007-03-06 | 2008-09-11 | Plasma Treat Gmbh | Verfahren und Vorrichtung zur Behandlung einer Oberfläche eines Werkstückes |
DE102007032496B3 (de) * | 2007-07-12 | 2009-01-29 | Maschinenfabrik Reinhausen Gmbh | Vorrichtung zur Erzeugung eines Plasma-Jets |
DE102007041329B4 (de) * | 2007-08-31 | 2016-06-30 | Thermico Gmbh & Co. Kg | Plasmabrenner mit axialer Pulvereindüsung |
EP2232142A2 (de) * | 2008-01-18 | 2010-09-29 | Innovent e.V. Technologieentwicklung | Vorrichtung und verfahren zum aufrechterhalten und betrieb einer flamme |
KR100999583B1 (ko) * | 2008-02-22 | 2010-12-08 | 주식회사 유진테크 | 기판처리장치 및 기판처리방법 |
DE102008018939A1 (de) | 2008-04-15 | 2009-10-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Herstellen einer elektrisch leitenden Struktur auf einem temperaturempfindlichen Foliensubstrat |
TWI641292B (zh) | 2008-08-04 | 2018-11-11 | Agc北美平面玻璃公司 | 電漿源 |
DE102008052102B4 (de) * | 2008-10-20 | 2012-03-22 | INPRO Innovationsgesellschaft für fortgeschrittene Produktionssysteme in der Fahrzeugindustrie mbH | Vorrichtung zum Vor- und/oder Nachbehandeln einer Bauteiloberfläche mittels eines Plasmastrahls |
US20100151236A1 (en) * | 2008-12-11 | 2010-06-17 | Ford Global Technologies, Llc | Surface treatment for polymeric part adhesion |
TWI407842B (zh) * | 2008-12-31 | 2013-09-01 | Ind Tech Res Inst | 大氣電漿大幅寬處理裝置 |
DE102009004968B4 (de) * | 2009-01-14 | 2012-09-06 | Reinhausen Plasma Gmbh | Strahlgenerator zur Erzeugung eines gebündelten Plasmastrahls |
CA3198302A1 (en) | 2009-02-08 | 2010-08-12 | Ap Solutions, Inc. | Plasma source and method for removing materials from substrates utilizing pressure waves |
DE102010016926A1 (de) | 2009-05-16 | 2010-12-30 | Eichler Gmbh & Co.Kg | Verfahren und Beschichtungsanlage zur elektrostatischen Lackierung (Pulverbeschichtung) von elektrisch nicht leitenden Teilen |
US10049859B2 (en) * | 2009-07-08 | 2018-08-14 | Aixtron Se | Plasma generating units for processing a substrate |
EP2279801B1 (de) | 2009-07-27 | 2015-01-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Beschichtungsverfahren mit Plasmastrahl und Plasmabeschichtungsvorrichtung |
JP2011060688A (ja) * | 2009-09-14 | 2011-03-24 | Kasuga Electric Works Ltd | プラズマ表面処理装置 |
TW201117677A (en) * | 2009-11-02 | 2011-05-16 | Ind Tech Res Inst | Plasma system including inject device |
US20110132543A1 (en) * | 2009-12-09 | 2011-06-09 | Electronics And Telecommunications Research Institute | Brush type plasma surface treatment apparatus |
DE102010055532A1 (de) | 2010-03-02 | 2011-12-15 | Plasma Treat Gmbh | Verfahren zur Herstellung eines mehrschichtigen Verpackungsmaterials und Verfahren zum Auftragen eines Klebers sowie Vorrichtung dazu |
DE102010011643A1 (de) | 2010-03-16 | 2011-09-22 | Christian Buske | Vorrichtung und Verfahren zur Plasmabehandlung von lebendem Gewebe |
DE102010014552A1 (de) | 2010-03-22 | 2011-09-22 | Timo Brummer | Verfahren zur Plasmabeschichtung einer Substratoberfläche mit Beschichtungsflüssigkeit |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
JP2011252085A (ja) | 2010-06-02 | 2011-12-15 | Honda Motor Co Ltd | プラズマ成膜方法 |
JP5191524B2 (ja) * | 2010-11-09 | 2013-05-08 | 株式会社新川 | プラズマ装置およびその製造方法 |
DE102010044114A1 (de) | 2010-11-18 | 2012-05-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zum Verbinden von Substraten und damit erhältliche Verbundstruktur |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
JP2014527575A (ja) | 2011-07-25 | 2014-10-16 | エッカルト ゲゼルシャフト ミット ベシュレンクテル ハフツングEckart GmbH | 基材コーティングのための方法、およびそのような方法における添加剤含有粉末化コーティング物質の使用 |
DE102011052120A1 (de) | 2011-07-25 | 2013-01-31 | Eckart Gmbh | Verwendung speziell belegter, pulverförmiger Beschichtungsmaterialien und Beschichtungsverfahren unter Einsatz derartiger Beschichtungsmaterialien |
DE102011052121A1 (de) | 2011-07-25 | 2013-01-31 | Eckart Gmbh | Beschichtungsverfahren nutzend spezielle pulverförmige Beschichtungsmaterialien und Verwendung derartiger Beschichtungsmaterialien |
DE102011052119A1 (de) | 2011-07-25 | 2013-01-31 | Eckart Gmbh | Verfahren zur Substratbeschichtung und Verwendung additivversehener, pulverförmiger Beschichtungsmaterialien in derartigen Verfahren |
DE102011052306A1 (de) | 2011-07-29 | 2013-01-31 | Jokey Plastik Sohland Gmbh | Verfahren zur Erzeugung einer permeationshemmenden Beschichtung von Kunststoffbehältern und Beschichtungsanlage |
TWI461113B (zh) * | 2011-08-24 | 2014-11-11 | Nat Univ Tsing Hua | 常壓電漿噴射裝置 |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
KR20130108536A (ko) * | 2012-01-17 | 2013-10-04 | 시너스 테크놀리지, 인코포레이티드 | 라디칼 반응기를 이용한 그래핀 또는 공액 탄소 증착 |
DE102012003563B4 (de) * | 2012-02-23 | 2017-07-06 | Drägerwerk AG & Co. KGaA | Einrichtung zur desinfizierenden Wundbehandlung |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
KR101996433B1 (ko) * | 2012-11-13 | 2019-07-05 | 삼성디스플레이 주식회사 | 박막 형성 장치 및 그것을 이용한 박막 형성 방법 |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
CN103074569A (zh) * | 2013-01-29 | 2013-05-01 | 电子科技大学 | 大气辉光放电低温等离子体镀膜装置 |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
JP6123796B2 (ja) * | 2013-03-15 | 2017-05-10 | 東レ株式会社 | プラズマcvd装置およびプラズマcvd方法 |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
DE102013017109A1 (de) | 2013-10-15 | 2015-04-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren und Vorrichtung zur Herstellung von Partikeln in einem Atmosphärendruckplasma |
WO2015061306A1 (en) * | 2013-10-25 | 2015-04-30 | United Technologies Corporation | Plasma spraying system with adjustable coating medium nozzle |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US11432393B2 (en) | 2013-11-13 | 2022-08-30 | Hypertherm, Inc. | Cost effective cartridge for a plasma arc torch |
US11278983B2 (en) | 2013-11-13 | 2022-03-22 | Hypertherm, Inc. | Consumable cartridge for a plasma arc cutting system |
US11684995B2 (en) | 2013-11-13 | 2023-06-27 | Hypertherm, Inc. | Cost effective cartridge for a plasma arc torch |
US9981335B2 (en) | 2013-11-13 | 2018-05-29 | Hypertherm, Inc. | Consumable cartridge for a plasma arc cutting system |
US10456855B2 (en) | 2013-11-13 | 2019-10-29 | Hypertherm, Inc. | Consumable cartridge for a plasma arc cutting system |
ITPD20130310A1 (it) | 2013-11-14 | 2015-05-15 | Nadir S R L | Metodo per la generazione di un getto o jet di plasma atmosferico e dispositivo minitorcia al plasma atmosferico |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
WO2015088069A1 (ko) * | 2013-12-11 | 2015-06-18 | 주식회사 에이피아이 | 플라즈마 발생장치 |
DE102014100385A1 (de) * | 2014-01-15 | 2015-07-16 | Plasma Innovations GmbH | Plasmabeschichtungsverfahren zum Abscheiden einer Funktionsschicht und Abscheidevorrichtung |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
RU2558713C1 (ru) * | 2014-03-11 | 2015-08-10 | Рузиль Рашитович Саубанов | Устройство импульсного генератора плазмы на переменном токе |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US20150349307A1 (en) * | 2014-05-27 | 2015-12-03 | GM Global Technology Operations LLC | Method for preparing a coated lithium battery component |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
EP2959992A1 (de) | 2014-06-26 | 2015-12-30 | Eckart GmbH | Verfahren zur Herstellung eines partikelhaltigen Aerosols |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
EP3180151B1 (de) | 2014-08-12 | 2021-11-03 | Hypertherm, Inc. | Kostengünstige kartusche für einen plasmalichtbogenbrenner |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
CN104445059A (zh) * | 2014-10-27 | 2015-03-25 | 安徽大学 | 一种交流等离子体炬制取合成气装置 |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
JP6508746B2 (ja) | 2014-12-05 | 2019-05-08 | エージーシー フラット グラス ノース アメリカ,インコーポレイテッドAgc Flat Glass North America,Inc. | マクロ粒子低減コーティングを利用したプラズマ源ならびにマクロ粒子低減コーティングを用いたプラズマ源を薄膜コーティングおよび表面改質に使用する方法 |
MX2017007356A (es) | 2014-12-05 | 2018-04-11 | Agc Flat Glass Europe S A | Fuente de plasma del catodo hueco. |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
KR101636872B1 (ko) * | 2015-05-14 | 2016-07-07 | 인하대학교 산학협력단 | 합성 가스 생산을 위한 아크 플라즈마 장치. |
EP3307030B1 (de) * | 2015-06-02 | 2020-04-29 | FUJI Corporation | Plasmaerzeugungsvorrichtung |
JP7073251B2 (ja) | 2015-08-04 | 2022-05-23 | ハイパーサーム インコーポレイテッド | 液冷プラズマアークトーチ用カートリッジフレーム |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
AT517694B1 (de) * | 2015-11-12 | 2017-04-15 | Inocon Tech Ges M B H | Vorrichtung und Verfahren zum Aufbringen einer Beschichtung |
US9721764B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Method of producing plasma by multiple-phase alternating or pulsed electrical current |
US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
US10995406B2 (en) * | 2016-04-01 | 2021-05-04 | Universities Space Research Association | In situ tailoring of material properties in 3D printed electronics |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
WO2018020434A1 (en) | 2016-07-26 | 2018-02-01 | BORISSOVA, Anastasiia Olegovna | Tissue tolerable plasma generator and method for the creation of protective film from the wound substrate |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
DE102016124209A1 (de) | 2016-12-13 | 2018-06-14 | Jokey Plastik Wipperfürth GmbH | Beschichtungsvorrichtung und Beschichtungsverfahren für Kunststoffbehälter |
CN110178449B (zh) * | 2016-12-23 | 2021-07-23 | 等离子体处理有限公司 | 喷嘴组件和用于制造大气等离子体射流的装置 |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
DE102017201559A1 (de) | 2017-01-31 | 2018-08-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Atmosphärendruckplasmaverfahren zur Herstellung von plasmapolymeren Beschichtungen |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
JP6341494B2 (ja) * | 2017-06-05 | 2018-06-13 | 春日電機株式会社 | イオン生成装置 |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
SG11202002725UA (en) | 2017-10-01 | 2020-04-29 | Space Foundry Inc | Modular print head assembly for plasma jet printing |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
DE102017130353A1 (de) | 2017-12-18 | 2019-06-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Sol-Gel-basierte Haftvermittlungsschicht für PTFE-basierte Beschichtungen und Verfahren zur Herstellung derselben |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
TWI766433B (zh) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | 形成氣隙的系統及方法 |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
DE102018108881A1 (de) | 2018-04-13 | 2019-10-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Oberflächenmodifiziertes Silikon, dessen Verwendung in Antihaftbeschichtungen sowie dieses enthaltendes Verbundmaterial |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
DE102019102831A1 (de) | 2019-02-05 | 2020-08-06 | Plasmatreat Gmbh | Verfahren und Vorrichtung zur Plasmabehandlung einer Materialbahn sowie Verfahren und Vorrichtung zur Herstellung eines Hohlextrudats mit plasmabehandelter Innenfläche |
DE102019118173A1 (de) | 2019-07-04 | 2021-01-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Oberflächenmodifiziertes Silikon, dessen Verwendung in Antihaftbeschichtungen sowie dieses enthaltendes Verbundmaterial |
CN110315177A (zh) * | 2019-08-06 | 2019-10-11 | 河北瓦尔丁科技有限公司 | 等离子电源割炬头加速气路装置 |
CN113546920B (zh) * | 2021-07-20 | 2023-04-07 | 浙江洁美电子科技股份有限公司 | 电弧烧除系统及使用该系统所制得的纸带 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61119664A (ja) | 1984-11-16 | 1986-06-06 | Mitsubishi Heavy Ind Ltd | プラズマ溶射方法 |
FR2600229B1 (fr) | 1986-06-17 | 1994-09-09 | Metallisation Ind Ste Nle | Torche de rechargement a plasma |
US4916273A (en) | 1987-03-11 | 1990-04-10 | Browning James A | High-velocity controlled-temperature plasma spray method |
US5109150A (en) | 1987-03-24 | 1992-04-28 | The United States Of America As Represented By The Secretary Of The Navy | Open-arc plasma wire spray method and apparatus |
FR2622894B1 (fr) * | 1987-11-10 | 1990-03-23 | Electricite De France | Procede et installation d'hydropyrolyse d'hydrocarbures lourds par jet de plasma,notamment de plasma d'h2/ch4 |
JPH0226895A (ja) | 1988-07-14 | 1990-01-29 | Fujitsu Ltd | ダイヤモンド気相合成方法及びその装置 |
WO1990012123A1 (en) | 1989-03-31 | 1990-10-18 | Leningradsky Politekhnichesky Institut Imeni M.I.Kalinina | Method of treatment with plasma and plasmatron |
SU1835865A1 (ru) | 1989-12-01 | 1996-04-10 | Ленинградский Политехнический Институт Им.М.И.Калинина | Способ воздушно-плазменного напыления металлических покрытий |
FR2713667B1 (fr) * | 1993-12-15 | 1996-01-12 | Air Liquide | Procédé et dispositif de dépôt à basse température d'un film contenant du silicium sur un substrat non métallique. |
JP3700177B2 (ja) * | 1993-12-24 | 2005-09-28 | セイコーエプソン株式会社 | 大気圧プラズマ表面処理装置 |
US5662266A (en) * | 1995-01-04 | 1997-09-02 | Zurecki; Zbigniew | Process and apparatus for shrouding a turbulent gas jet |
DE19532412C2 (de) | 1995-09-01 | 1999-09-30 | Agrodyn Hochspannungstechnik G | Vorrichtung zur Oberflächen-Vorbehandlung von Werkstücken |
US6001426A (en) * | 1996-07-25 | 1999-12-14 | Utron Inc. | High velocity pulsed wire-arc spray |
US6194036B1 (en) * | 1997-10-20 | 2001-02-27 | The Regents Of The University Of California | Deposition of coatings using an atmospheric pressure plasma jet |
JP4446597B2 (ja) | 1997-10-20 | 2010-04-07 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 常圧プラズマジェットを使用したコーティングのデポジット |
DE19807086A1 (de) * | 1998-02-20 | 1999-08-26 | Fraunhofer Ges Forschung | Verfahren zum Beschichten von Oberflächen eines Substrates, Vorrichtung zur Durchführung des Verfahrens, Schichtsystem sowie beschichtetes Substrat |
DE29805999U1 (de) | 1998-04-03 | 1998-06-25 | Agrodyn Hochspannungstechnik G | Vorrichtung zur Plasmabehandlung von Oberflächen |
DE29911974U1 (de) | 1999-07-09 | 2000-11-23 | Agrodyn Hochspannungstechnik G | Plasmadüse |
-
1999
- 1999-10-30 DE DE29919142U patent/DE29919142U1/de not_active Expired - Lifetime
-
2000
- 2000-03-17 DE DE50008155T patent/DE50008155D1/de not_active Expired - Lifetime
- 2000-03-17 ES ES00926739T patent/ES2230098T3/es not_active Expired - Lifetime
- 2000-03-17 AT AT00926739T patent/ATE278817T1/de active
- 2000-03-17 JP JP2001535626A patent/JP4082905B2/ja not_active Expired - Fee Related
- 2000-03-17 WO PCT/EP2000/002401 patent/WO2001032949A1/de active IP Right Grant
- 2000-03-17 EP EP00926739A patent/EP1230414B1/de not_active Expired - Lifetime
- 2000-03-17 US US10/111,864 patent/US6800336B1/en not_active Expired - Lifetime
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008029681A1 (de) | 2008-06-23 | 2009-12-24 | Plasma Treat Gmbh | Verfahren und Vorrichtung zum Aufbringen einer Schicht, insbesondere einer selbstreinigend und/oder antimikrobiell wirkenden photokatalytischen Schicht, auf eine Oberfläche |
DE102008058783A1 (de) | 2008-11-24 | 2010-05-27 | Plasmatreat Gmbh | Verfahren zur atmosphärischen Beschichtung von Nanooberflächen |
TWI384085B (zh) * | 2009-05-07 | 2013-02-01 | Univ Kao Yuan | 往復式雙段噴射常壓電漿鍍膜系統 |
DE102009048397A1 (de) * | 2009-10-06 | 2011-04-07 | Plasmatreat Gmbh | Atmosphärendruckplasmaverfahren zur Herstellung oberflächenmodifizierter Partikel und von Beschichtungen |
WO2012123530A1 (de) | 2011-03-16 | 2012-09-20 | Reinhausen Plasma Gmbh | Beschichtung sowie verfahren und vorrichtung zum beschichten |
WO2013014212A2 (de) | 2011-07-25 | 2013-01-31 | Eckart Gmbh | Verfahren zum aufbringen einer beschichtung auf einem substrat, beschichtung und verwendung von partikeln |
DE102011052118A1 (de) | 2011-07-25 | 2013-01-31 | Eckart Gmbh | Verfahren zum Aufbringen einer Beschichtung auf einem Substrat, Beschichtung und Verwendung von Partikeln |
US9771652B2 (en) | 2012-03-29 | 2017-09-26 | Plasmatreat Gmbh | Method for passivating a metal surface |
EP2644739A1 (de) | 2012-03-29 | 2013-10-02 | BSH Bosch und Siemens Hausgeräte GmbH | Verfahren zum Passivieren einer Metalloberfläche und Haushaltsgerät, insbesondere Haushaltsgeschirrspülmaschine mit einem Wandungsteil |
DE102012102721A1 (de) | 2012-03-29 | 2013-10-02 | BSH Bosch und Siemens Hausgeräte GmbH | Verfahren zum Passivieren einer Metalloberfläche |
WO2015055486A1 (de) | 2013-10-14 | 2015-04-23 | Plasma Innovations GmbH | Herstellungsverfahren für einen plasmabeschichteten formkörper und bauteil |
DE102013111306A1 (de) | 2013-10-14 | 2015-04-30 | Ensinger Gmbh | Herstellungsverfahren für einen plasmabeschichteten Formkörper und Bauteil |
DE102014219979A1 (de) | 2014-10-01 | 2016-04-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verbund aus Substrat, plasmapolymerer Schicht, Mischschicht und Deckschicht |
WO2016050937A1 (de) | 2014-10-01 | 2016-04-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verbund aus substrat, plasmapolymerer schicht, mischschicht und deckschicht |
DE102015121253A1 (de) | 2015-12-07 | 2017-06-08 | Plasmatreat Gmbh | Vorrichtung zum Erzeugen eines atmosphärischen Plasmastrahls zur Behandlung der Oberfläche eines Werkstücks |
DE102016101456A1 (de) | 2016-01-27 | 2017-07-27 | Plasmatreat Gmbh | Spritzgussbauteil mit Einlegeteil, Verfahren zu dessen Herstellung und Verwendungen dafür |
WO2017129582A1 (de) | 2016-01-27 | 2017-08-03 | Plasmatreat Gmbh | Spritzgussbauteil mit einlegeteil, verfahren zu dessen herstellung und verwendungen dafür |
DE102016104130A1 (de) | 2016-03-07 | 2017-09-07 | Plasmatreat Gmbh | Verfahren zum Beschichten einer Bauteiloberfläche sowie Verfahren zur Herstellung eines Beschichtungsmaterials |
DE102016104128A1 (de) | 2016-03-07 | 2017-09-07 | Plasmatreat Gmbh | Verfahren zum Beschichten einer Bauteiloberfläche, beschichtetes Bauteil und Verwendung eines Precursormaterials |
DE102017122059A1 (de) * | 2017-09-22 | 2019-03-28 | Plasma Innovations GmbH | Verfahren zur Herstellung einer Endoberfläche und Leiterplatte |
WO2019057450A1 (de) | 2017-09-22 | 2019-03-28 | Plasma Innovations GmbH | Verfahren zur herstellung einer endoberfläche und leiterplatte |
WO2021023605A1 (de) | 2019-08-08 | 2021-02-11 | Plasmatreat Gmbh | Verfahren zum ausrüsten eines elektronischen displays mit einer displayschutzscheibe |
WO2024068623A1 (de) | 2022-09-29 | 2024-04-04 | Plasmatreat Gmbh | Plasmabehandlung mit flüssigkeitskühlung |
DE102023106618A1 (de) | 2022-09-29 | 2024-04-04 | Plasmatreat Gmbh | Plasmabehandlung mit Flüssigkeitskühlung |
Also Published As
Publication number | Publication date |
---|---|
EP1230414A1 (de) | 2002-08-14 |
DE50008155D1 (de) | 2004-11-11 |
US6800336B1 (en) | 2004-10-05 |
ATE278817T1 (de) | 2004-10-15 |
DE29919142U1 (de) | 2001-03-08 |
WO2001032949A1 (de) | 2001-05-10 |
JP2003514114A (ja) | 2003-04-15 |
JP4082905B2 (ja) | 2008-04-30 |
ES2230098T3 (es) | 2005-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1230414B1 (de) | Verfahren und vorrichtung zur plasmabeschichtung von oberflächen | |
DE102006019664B4 (de) | Kaltplasma-Handgerät zur Plasma-Behandlung von Oberflächen | |
DE4021182C2 (de) | ||
DE19856307C1 (de) | Vorrichtung zur Erzeugung eines freien kalten Plasmastrahles | |
EP1292176B1 (de) | Vorrichtung zum Erzeugen eines Aktivgasstrahls | |
WO1999042637A1 (de) | Verfahren und vorrichtung zum beschichten eines substrates, sowie beschichtetes substrat | |
WO2005125286A2 (de) | Vorrichtung zur bearbeitung eines substrates mittels mindestens eines plasma-jets | |
WO2001043512A1 (de) | Plasmadüse | |
EP0986939A1 (de) | Vorrichtung zur plasmabehandlung von oberflächen | |
WO2003015122A1 (de) | Vorrichtung zum beschichten von gegenständen | |
EP2130414B1 (de) | Vorrichtung und verfahren zur erzeugung eines plasmastrahls | |
EP2054166B1 (de) | Verfahren und vorrichtung zum herstellen einer beschichtung | |
WO2009127540A1 (de) | Vorrichtung zum behandeln einer inneren oberfläche eines werkstücks | |
EP3077122B1 (de) | Druckluft-aufbereitungskammer | |
EP1872637B1 (de) | Vorrichtung und verfahren zur plasmabeschichtung | |
WO2005099320A2 (de) | Verfahren und vorrichtung zum erzeugen eines niederdruckplasmas und anwendungen des niederdruckplasmas | |
WO2008061602A1 (de) | Verfahren und vorrichtung zum erzeugen eines plasmas und anwendungen des plasmas | |
WO2005117507A2 (de) | Verfahren zum entfernen mindestens einer anorganischen schicht von einem bauteil | |
EP3430864B1 (de) | Plasmadüse und verfahren zur verwendung der plasmadüse | |
DE10223865B4 (de) | Verfahren zur Plasmabeschichtung von Werkstücken | |
WO2011141184A1 (de) | Plasmagenerator sowie verfahren zur erzeugung und anwendung eines ionisierten gases | |
EP2142679B1 (de) | VERFAHREN ZUR PLASMAGESTÜTZTEN OBERFLÄCHENBEHANDLUNG GROßVOLUMIGER BAUTEILE | |
DE2229716A1 (de) | Verfahren und einrichtung zur energiebeladung eines reaktionsfaehigen werkstoffs mittels einer bogenentladung | |
DE102013106315B4 (de) | Verfahren und Vorrichtung zum Erzeugen eines physikalischen Plasmas | |
EP2532214A1 (de) | Hohltrichterförmiger plasmagenerator |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20020315 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
|
AX | Request for extension of the european patent |
Free format text: AL;LT;LV;MK;RO;SI |
|
17Q | First examination report despatched |
Effective date: 20030901 |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DERANGEWAND Owner name: AGRODYN HOCHSPANNUNGSTECHNIK GMBH |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DERANGEWAND Owner name: PLASMATREAT GMBH |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20041006 |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D Free format text: NOT ENGLISH |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D Free format text: GERMAN |
|
REF | Corresponds to: |
Ref document number: 50008155 Country of ref document: DE Date of ref document: 20041111 Kind code of ref document: P |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20050106 |
|
REG | Reference to a national code |
Ref country code: SE Ref legal event code: TRGR |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: NV Representative=s name: TROESCH SCHEIDEGGER WERNER AG |
|
GBT | Gb: translation of ep patent filed (gb section 77(6)(a)/1977) |
Effective date: 20050115 |
|
REG | Reference to a national code |
Ref country code: DK Ref legal event code: T3 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20050317 |
|
LTIE | Lt: invalidation of european patent or patent extension |
Effective date: 20041006 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MC Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20050331 |
|
REG | Reference to a national code |
Ref country code: ES Ref legal event code: FG2A Ref document number: 2230098 Country of ref document: ES Kind code of ref document: T3 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
ET | Fr: translation filed | ||
26N | No opposition filed |
Effective date: 20050707 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20050306 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 17 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: BE Payment date: 20160325 Year of fee payment: 17 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: NL Payment date: 20160324 Year of fee payment: 17 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: ES Payment date: 20160324 Year of fee payment: 17 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20160317 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 18 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20160317 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: IT Payment date: 20160329 Year of fee payment: 17 |
|
PGRI | Patent reinstated in contracting state [announced from national office to epo] |
Ref country code: IT Effective date: 20170710 |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: MM Effective date: 20170401 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170401 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170317 |
|
PGRI | Patent reinstated in contracting state [announced from national office to epo] |
Ref country code: IT Effective date: 20170710 |
|
REG | Reference to a national code |
Ref country code: BE Ref legal event code: MM Effective date: 20170331 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 19 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170331 |
|
REG | Reference to a national code |
Ref country code: ES Ref legal event code: FD2A Effective date: 20180703 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: ES Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170318 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: CH Payment date: 20190320 Year of fee payment: 20 Ref country code: GB Payment date: 20190320 Year of fee payment: 20 Ref country code: LU Payment date: 20190320 Year of fee payment: 20 Ref country code: FR Payment date: 20190319 Year of fee payment: 20 Ref country code: DE Payment date: 20190320 Year of fee payment: 20 Ref country code: IE Payment date: 20190319 Year of fee payment: 20 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DK Payment date: 20190322 Year of fee payment: 20 Ref country code: SE Payment date: 20190322 Year of fee payment: 20 Ref country code: AT Payment date: 20190320 Year of fee payment: 20 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R071 Ref document number: 50008155 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: DK Ref legal event code: EUP Expiry date: 20200317 |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: PE20 Expiry date: 20200316 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: MK9A |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION Effective date: 20200316 |
|
REG | Reference to a national code |
Ref country code: SE Ref legal event code: EUG |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IE Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION Effective date: 20200317 |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MK07 Ref document number: 278817 Country of ref document: AT Kind code of ref document: T Effective date: 20200317 |