EP1230414B1 - Method and device for plasma coating surfaces - Google Patents
Method and device for plasma coating surfaces Download PDFInfo
- Publication number
- EP1230414B1 EP1230414B1 EP00926739A EP00926739A EP1230414B1 EP 1230414 B1 EP1230414 B1 EP 1230414B1 EP 00926739 A EP00926739 A EP 00926739A EP 00926739 A EP00926739 A EP 00926739A EP 1230414 B1 EP1230414 B1 EP 1230414B1
- Authority
- EP
- European Patent Office
- Prior art keywords
- plasma jet
- nozzle
- precursor material
- plasma
- precursor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/42—Plasma torches using an arc with provisions for introducing materials into the plasma, e.g. powder, liquid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/12—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the method of spraying
- C23C4/134—Plasma spraying
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/06—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases
- C23C8/36—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using gases using ionised gases, e.g. ionitriding
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/32—Plasma torches using an arc
- H05H1/34—Details, e.g. electrodes, nozzles
Abstract
Description
Die Erfindung betrifft ein Verfahren zur Beschichtung von Oberflächen mit den Merkmalen des Oberbegriffs des Anspruches 1. Die Erfindung betrifft auch eine Vorrichtung zur Beschichtung von Oberflächen mit den Merkmalen des Anspruches 7.The invention relates to a method for coating Surfaces with the characteristics of the generic term of Claim 1. The invention also relates to a device for coating surfaces with the characteristics of Claim 7.
Bei herkömmlichen Plasmabeschichtungs- und Plasmapolymerisationsverfahren erfolgt die Abscheidung des Materials auf dem zu beschichtenden Werkstück unter Vakuum oder zumindest bei einem gegenüber dem Atmosphärendruck starkverminderten Druck. Diese Verfahren erfordern deshalb einen hohen apparativen Aufwand und sind daher für viele praktische Anwendungen nicht wirtschaftlich, zumal sich die zu beschichtenden Werkstücke in der Regel nicht kontinuierlich, sondern nur chargenweise in die Vakuumkammer einbringen lassen.With conventional plasma coating and The plasma polymerization process is used to separate the Material on the workpiece to be coated under vacuum or at least one against atmospheric pressure greatly reduced pressure. Therefore, these procedures require a lot of equipment and are therefore for many practical applications not economical, especially since the As a rule, workpieces to be coated are not continuously, but only in batches Have the vacuum chamber inserted.
Im Hinblick auf eine kostengünstige Beschichtung von Massenprodukten wäre deshalb ein Verfahren wünschenswert, das die bekannten Vorteile von Plasmabeschichtungs- oder Polymerisationsverfahren aufweist, also insbesondere eine gezielte Aufbringung sehr dünner Schichten mit genauer Zusammensetzung und definiertem Eigenschaftsprofil ermöglicht, dabei jedoch unter Atmosphärendruck durchgeführt werden kann.With regard to an inexpensive coating of Bulk products would therefore want a process that the known advantages of plasma coating or Has polymerization process, in particular one targeted application of very thin layers with more precise Composition and defined property profile allows, but under atmospheric pressure can be carried out.
In einer Veröffentlichung von R. Thyen:
Die DE 198 07 086 A offenbart ein Verfahren und eine Vorrichtung zur Plasmabeschichtung von Oberflächen, wobei in der Anregungszone zwischen zwei Elektroden, von denen mindestens eine mit einem Dielektrikum versehen ist, eine Coronaentladung gezündet wird. Diese Art der Entladung ist auch als Funkenbüschel bekannt. Die Coronaentladung vermeidet eine ungewollte Heißentladung oder Bogenentladung zwischen den Elektroden, um eine Zerstörung der Elektroden bzw. des zu beschichtenden Substrates oder der abgeschiedenen Schicht zu verhindern.DE 198 07 086 A discloses one method and one Device for plasma coating of surfaces, wherein in the excitation zone between two electrodes, one of which at least one is provided with a dielectric, one Corona discharge is ignited. This type of discharge is also known as a tuft of sparks. The corona discharge avoids unwanted hot discharge or arc discharge between the electrodes to destroy the electrodes or the substrate to be coated or the to prevent deposited layer.
Die W099/20809 offenbart ebenfalls ein Verfahren und eine Vorrichtung zur Beschichtung von Oberflächen, bei der mit Hilfe einer Radiofrequenzentladung, die bewusst einen Entladungsbogen vermeidet, das Arbeitsgas angeregt wird, in das strömungsabwärts das Precursormaterial eingespeist wird.W099 / 20809 also discloses a method and a Device for coating surfaces in which Help of a radio frequency discharge that deliberately a Discharge arc avoids the working gas being excited in which feeds the precursor material downstream becomes.
Der vorliegenden Erfindung liegt das technische Problem zugrunde, ein Verfahren der eingangs genannten Art zu schaffen, das bei einfacher Prozessführung eine effiziente und gut steuerbare Beschichtung ermöglicht, und eine zweckmäßige Vorrichtung zur Durchführung dieses Verfahrens anzugeben.The present invention has the technical problem based on a procedure of the type mentioned at the beginning create that with simple process control an efficient and easily controllable coating, and a expedient device for performing this method specify.
Diese Aufgabe wird mit den in den unabhängigen Patentansprüchen angegebenen Merkmalen gelöst.This task is carried out with the independent Features specified claims solved.
Bei dem erfindungsgemäßen Verfahren wird durch Hindurchleiten eines Arbeitsgases durch eine Anregungszone ein Plasmastrahl erzeugt, und das Precursormaterial wird getrennt vom Arbeitsgas in den Plasmastrahl eingespeist.In the method according to the invention Passing a working gas through an excitation zone a plasma jet is generated and the precursor material is fed into the plasma jet separately from the working gas.
Dadurch, dass erfindungsgemäß das atmosphärische Plasma in der Form eines Strahls erzeugt wird, der eine wesentlich größere Reichweite hat als die Entladungszone einer Koronaentladung, lässt sich der Beschichtungsprozess einfach ausführen, indem die zu beschichtende Oberfläche des Substrats mit dem Plasmastrahl überstrichen wird. Da hierzu keine Gegenelektrode auf der Rückseite des Substrats erforderlich ist, kann es sich bei den Substraten auch um dickere und/oder komplexgeformte Werkstücke handeln. Da das Precursormaterial getrennt vom Arbeitsgas zugeführt und in den Plasmastrahl eingespeist wird, der erst in der Anregungszone entsteht, braucht das Precursormaterial selbst nicht die gesamte Anregungszone zu durchqueren. Dies hat den wichtigen Vorteil, dass das zumeist aus monomeren Verbindungen bestehende Precursormaterial nicht schon in der Anregungszone zersetzt oder in sonstiger Weise chemisch verändert wird. Für die erwünschte Reaktion, die zur Abscheidung einerpolymerähnlichen Schicht auf der Oberfläche des Substrats führt, steht deshalb eine wesentlich größere Anzahl an Reaktionspartnern zur Verfügung als bei dem herkömmlichen Verfahren. Aufgrund dieses Effektes lassen sich überraschend hohe Beschichtungsraten erzielen, die die bisher mit atmosphärischem Plasma erreichbaren Beschichtungsraten um mehr als einen Faktor 10 übersteigen können. Die Wahl des Einspeisungsortes relativ zur Anregungszone und zur Substratoberfläche stellt dabei einen Prozessparameter dar, mit dem sich der Beschichtungsprozess feinfühlig steuern lässt. Bei empfindlichen Precursormaterialien kann die Einspeisung in den verhältnismäßig kühlen Plasmastrahl stromabwärts der Anregungszone erfolgen. Die niedrige Temperatur dieses Plasmastrahls ermöglicht eine effiziente Beschichtung mit Precursormaterialien, die nur bei Temperaturen bis zu 200°C oder weniger stabil sind. Die nötigen Anregungsenergien für die gewünschte Reaktion der Monomere wird in erster Linie durch freie Elektronen, Ionen oder Radikale bereitgestellt, die noch in großer Zahl in dem kühlen Plasmastrahl enthalten sind. Je weiter der Einspeisungsort stromaufwärts in Richtung auf die Anregungszone verlegt wird, desto höher ist die Konzentration der reaktionsfördernden Ionen, Radikale etc.. Wenn der Einspeisungsort in den stromabwärtigen Bereich der Anregungszone hineinverlegt wird, ist in gewissem Ausmaß auch eine direkte Anregung der Monomere möglich. Auf diese Weise lassen sich die Anregungsbedingungen im Hinblick auf das jeweils verwendete Precursormaterial optimieren. Generell besteht ein Vorteil des erfindungsgemäßen Verfahrens darin, daß die Prozesse der Plasmaerzeugung einerseits und der Plasmaanregung des Precursormaterials andererseits in verschiedenen, einander räumlich nur teilweise oder gar nicht überlappenden Zonen stattfinden, so daß wechselseitige schädliche Einflüsse vermieden werden können.The fact that according to the invention the atmospheric plasma in the shape of a beam is generated, which is essential has a greater range than the discharge zone of one Corona discharge, the coating process simply run by the surface to be coated the substrate is covered with the plasma jet. There no counter electrode on the back of the substrate is required, the substrates can also be act thicker and / or complex shaped workpieces. Since that Precursor material supplied separately from the working gas and in the plasma jet is fed, which only in the Excitation zone arises, needs the precursor material not to cross the entire excitation zone itself. This has the important advantage that it mostly consists of monomers Connections existing precursor material is not already in decomposes in the excitation zone or chemically in some other way is changed. For the desired response, which leads to Deposition of a polymer-like layer on the Surface of the substrate is therefore a much larger number of reactants Available than with the conventional method. by virtue of this effect can be surprisingly high Achieve coating rates that the previously with coating rates achievable in atmospheric plasma can exceed a factor of 10. The choice of Feed location relative to the excitation zone and The substrate surface represents a process parameter with which the coating process can be precisely controlled leaves. In the case of sensitive precursor materials, the Feed into the relatively cool plasma jet downstream of the excitation zone respectively. The low temperature of this plasma jet enables an efficient coating with precursor materials that can only be used at temperatures are stable up to 200 ° C or less. The necessary excitation energies for the desired one Reaction of the monomers is primarily through free electrons, Ions or radicals are still provided in large numbers in the cool plasma jet are included. The farther upstream the infeed direction is transferred to the excitation zone, the higher the concentration of reaction-promoting ions, radicals etc. If the feed point in the downstream area of the excitation zone is in some way Direct excitation of the monomers is also possible. In this way can the excitation conditions with regard to the particular one used Optimize precursor material. Generally there is an advantage of the invention Process in that the processes of plasma generation on the one hand and Plasma excitation of the precursor material on the other hand in different, one another only partially or not at all overlapping zones take place, so that mutual harmful influences can be avoided.
Vorteilhafte Ausgestaltungen der Erfindung ergeben sich aus den Unteransprüchen.Advantageous embodiments of the invention result from the subclaims.
Das Precursormaterial braucht nicht notwendigerweise im gasförmigen Zustand eingespeist zu werden, sondern kann beispielsweise auch im flüssigen oder festen, pulverförmigen Zustand eingespeist werden, so daß es erst in der Reaktionszone verdampft oder sublimiert. Ebenso ist es möglich, dem Precursormaterial feste Partikel wie Farbpigmente oder dergleichen zuzusetzen, die dann in die auf der Substratoberfläche abgeschiedene polymerähnliche Schicht eingebettet werden. Auf diese Weise läßt sich die Farbe, die Rauhigkeit oder die elektrische Leitfähigkeit der Beschichtung nach Bedarf einstellen.The precursor material does not necessarily need to be in the gaseous state to be fed in, but can also, for example, in liquid or solid, powdery state can be fed so that it is only in the reaction zone evaporates or sublimates. It is also possible to use the precursor material add solid particles such as color pigments or the like, which then in the embedded polymer-like layer on the substrate surface become. In this way, the color, the roughness or the electrical Adjust the conductivity of the coating as required.
Bei der Einspeisung des Precursormaterials in den Plasmastrahl kann auch der Venturieffekt ausgenutzt werden, um das Precursormaterial in den Plasmastrahl anzusaugen. Wenn andererseits das Precursormaterial aktiv zugeführt wird, läßt sich durch Wahl des Winkels, unter dem das Precursormaterial relativ zur Strahlrichtung des Plasmastrahls eingespeist wird, das Ausmaß der Vermischung des Precursormaterials im Plasma gezielt beeinflussen.When the precursor material is fed into the plasma jet, the Venturi effect can be exploited to get the precursor material into the plasma jet to suck. On the other hand, if the precursor material is actively supplied, can by choosing the angle at which the precursor material is relative to The beam direction of the plasma jet is fed in, the extent of the mixing of the precursor material in the plasma.
Entsprechend kann bei einem verdrallten Plasmastrahl die Einspeisung des Precursormaterials gleichsinnig oder entgegengesetzt zur Drallrichtung erfolgen.Correspondingly, in the case of a swirled plasma jet, the feed of the precursor material can take place in the same direction or opposite to the direction of swirl.
Falls die gewünschte Reaktion des Precursormaterials in reduzierenden oder inertem Atmosphären erfolgen muß, ist es möglich, den Plasmastrahl von außen mit einem geeigneten Schutzgas zu begasen, so daß die Reaktionszone durch einen schützenden Gasmantel von der Umgebungsluft getrennt wird.If the desired reaction of the precursor material in reducing or inert atmosphere must take place, it is possible to view the plasma jet from the outside with a suitable protective gas, so that the reaction zone through a protective gas jacket is separated from the ambient air.
Sofern für die gewünschte Reaktion eine bestimmte Temperatur erforderlich ist, läßt sich diese Temperatur beispielsweise durch Beheizen des Arbeitsgases und/oder durch Beheizen der Mündung der Plasmadüse präzise einstellen.If a certain temperature is required for the desired reaction, this temperature can be achieved, for example, by heating the working gas and / or precisely by heating the mouth of the plasma nozzle.
Für die Erzeugung des Plasmastrahls kann beispielsweise eine Plasmadüse eingesetzt werden, wie sie - zu anderen Zwecken - in DE 195 32 412 C2 beschrieben wird. Für die Beschichtung größerer Oberflächen ist es möglich, eine oder mehrere solcher Düsen exzentrisch an einem Rotationskopf anzuordnen (EP-A 986 993). Ebenso ist es möglich, eine rotierende Düse zu verwenden, bei der der Plasmastrahl schräg zur Rotationsachse abgegeben wird (DE-U-299 11974).For example, a plasma nozzle can be used to generate the plasma jet are, as described - for other purposes - in DE 195 32 412 C2 becomes. For the coating of larger surfaces it is possible to use one or to arrange several such nozzles eccentrically on a rotary head (EP-A 986 993). It is also possible to use a rotating nozzle in which the Plasma jet is emitted obliquely to the axis of rotation (DE-U-299 11974).
Bei der Plasmaerzeugung mit einer solchen Plasmadüse lassen sich grob drei Bereiche unterscheiden: (a) der Bereich der Bogenentladung, in dem eine direkte Plasmaanregung stattfindet, so daß es zu einer starken Anregung aber auch zur Zerstörung von Monomeren kommt, (b) der Bereich der indirekten Plasmaanregung, in dem nahezu keine Zerstörung der Monomere erfolgt aber dennoch eine effiziente und materialschonende Anregung der Monomere stattfindet, und (c) ein Mischbreich, der durch wenig Zerstörung und starke Anregung der Monomere gekennzeichnet ist.When generating such a plasma nozzle, roughly three can be created Differentiate areas: (a) the area of arc discharge in which a direct Plasma excitation takes place, so that there is a strong excitation but also Destruction of monomers occurs, (b) the area of indirect plasma excitation, in which there is almost no destruction of the monomers efficient and gentle stimulation of the monomers takes place, and (c) a mixed range that is characterized by little destruction and strong excitation of the monomers is marked.
Im folgenden werden Ausführungsbeispiele der Erfindung anhand der Zeichnung näher erläutert.The following are exemplary embodiments of the invention with reference to the drawing explained in more detail.
Es zeigen:
- Fig.1
- einen axialen Schnitt durch eine Plasmadüse zur Ausführung des erfindungsgemäßen Verfahrens gemäß einer ersten Ausführungsform;
- Fig.2
- einen Schnitt durch eine Plasmadüse gemäß einer zweiten Ausführungs form;
- Fig. 3
- einen Teilschnitt durch den Düsenkopf der Plasmadüse gemäß Figur 2 in einer zu Figur 2 rechtwinkligen Schnittebene;
- Fig. 4
- einen Schnitt durch den Kopf einer Plasmadüse gemäß einer dritten Ausführungsform;
- Fig. 5
- einen Schnitt durch eine Plasmadüse gemäß einer vierten Ausführungs form.
- Fig.1
- an axial section through a plasma nozzle for performing the method according to the invention according to a first embodiment;
- Fig.2
- a section through a plasma nozzle according to a second embodiment;
- Fig. 3
- a partial section through the nozzle head of the plasma nozzle according to Figure 2 in a sectional plane perpendicular to Figure 2;
- Fig. 4
- a section through the head of a plasma nozzle according to a third embodiment;
- Fig. 5
- a section through a plasma nozzle according to a fourth embodiment.
Die in Fig. 1 dargestellte Plasmadüse weist ein rohrförmiges Gehäuse 10 auf,
das einen langgestreckten, am unteren Ende konisch verjüngten Düsenkanal 12
bildet. In dem Düsenkanal 12 ist ein elektrisch isolierendes Keramikrohr 14 eingesetzt.
Ein Arbeitsgas, beispielsweise Luft, wird vom in der Zeichnung oberen
Ende her in den Düsenkanal 12 zugeführt und mit Hilfe einer in das Keramikrohr
14 eingesetzten Dralleinrichtung 16 so verdrallt, daß es wirbelförmig
durch den Düsenkanal 12 strömt, wie in der Zeichnung durch einen schraubenförmigen
Pfeil symbolisiert wird. In dem Düsenkanal 12 entsteht so ein Wirbelkern,
der längs der Achse des Gehäuses verläuft.The plasma nozzle shown in FIG. 1 has a
An der Dralleinrichtung 16 ist eine stiftförmige Elektrode 18 montiert, die
koaxial in den Düsenkanal 12 ragt und an die mit Hilfe eines Hochspannungsgenerators
20 eine hochfrequente Wechselspannung angelegt wird. Die mit Hilfe
des Hochfrequenzgenerators 20 erzeugte Spannung liegt in der Größenordnung
von einigen Kilovolt und hat beispielsweise eine Frequenz in der Größenordnung
von 20 Kiloherz.A pin-shaped
Das aus Metall bestehende Gehäuse 10 ist geerdet und dient als Gegenelektrode,
so daß eine elektrische Entladung zwischen der Elektrode 18 und dem Gehäuse
10 hervorgerufen werden kann. Beim Einschalten der Spannung kommt
es aufgrund der hohen Frequenz der Wechselspannung und aufgrund der Dielektrizität
des Keramikrohrs 14 zunächst zu einer Koronaentladung an der
Dralleinrichtung 16 und der Elektrode 18. Durch diese Koronaentladung wird
eine Bogenentladung von der Elektrode 18 zum Gehäuse 10 gezündet. Der
Lichtbogen 22 dieser Entladung wird durch das verdrallt einströmende Arbeitsgas
mitgenommen und im Kern der wirbelförmigen Gasströmung kanalisiert, so
daß der Lichtbogen dann nahezu geradlinig von der Spitze der Elektrode 18
längs der Gehäuseachse verläuft und sich erst im Bereich der Mündung des Gehäuses
10 radial auf die Gehäusewand verzweigt. Im gezeigten Beispiel bildet
das Gehäuse 10 am verjüngten Ende des Düsenkanals 12 eine radial nach innen
verspringende Schulter 24, die die eigentliche Gegenelektrode bildet und die
sich radial verzweigenden Äste des Lichtbogens 22 aufnimmt. Die Äste rotieren
dabei in Drallrichtung der Gasströmung, so daß ein ungleichförmiger Abbrand
an der Schulter 24 vermieden wird.The
In die Mündung des Gehäuses 10 ist ein zylindrisches Mundstück 26 aus Keramik
eingesetzt, dessen axial inneres Ende mit der Schulter 24 bündig ist und
unmittelbar von dieser Schulter umgeben ist und dessen Länge deutlich größer
ist als der Innendurchmesser. Das von dem Lichtbogen 22 erzeugte Plasma
strömt drallförmig durch das Mundstück 26 und wird aufgrund thermischer
Ausdehnung beim Durchströmen des Mundstücks 26 beschleunigt und radial
aufgeweitet, so daß man einen sehr stark fächerförmig aufgeweiteten Plasmastrahl
28 erhält, der noch um einige Zentimeter über das offene Ende 30 des
Mundstücks 26 hinausreicht und dabei in Drallrichtung rotiert.In the mouth of the
Diese Plasmadüse wird zur Plasmabeschichtung oder Plasmapolymerisation eines
Substrats 34 eingesetzt. Dazu wird das Precursormaterial mit Hilfe einer
Lanze 32 in den konzentrierten Plasmastrahl im Inneren des Mundstücks 26 zugeführt.This plasma nozzle is used for plasma coating or plasma polymerization of a
Während die in Figur 1 gezeigte Plasmadüse einen rotationssymmetrischen Plasmastrahl
28 erzeugt, läßt sich mit der in Figuren 2 und 3 gezeigten Plasmadüse
ein flacher, fächerförmig aufgeweiteter Plasmastrahl 28' erzeugen. In die Mündung
des Gehäuses 10 ist hier ein Mundstück 26' eingesetzt, das eine Venturidüse
36 für die selbstansaugende Einspeisung des Precursormaterials bildet.
Das Precursormaterial wird über einen Stutzen 38 zunächst in eine Ringkammer
40 am äußeren Umfang des Mundstücks 26' zugeführt und gelangt von dort
radial über eine oder mehrere Bohrungen in die Venturidüse 36. Der Einspeisungsort
befindet sich somit am stromabwärtigen Ende der Anregungszone, in
der der Plasmastrahl 28' erzeugt wird und die durch den von dem Lichtbogen 22
durchsetzten Düsenkanal 12 gebildet wird. While the plasma nozzle shown in Figure 1 is a rotationally
Die Venturidüse 36 mündet bei diesem Ausführungsbeispiel in einen Querkanal
42, der sich an beiden Enden in einen weiteren, am Umfang des Mundstücks
26' gebildeten Ringkanal 44 öffnet und der über eine schmale, in Richtung eines
Durchmessers des Mundstücks verlaufende Nut 46 zur Stirnfläche des Mundstücks
hin offen ist. Das aus der Venturidüse 36 austretende, mit dem Precursorgas
vermischte Plasma verteilt sich in dem Querkanal 42 und tritt dann weit
gefächert durch die Nut 46 aus. Auf diese Weise läßt sich eine gleichmäßige Beschichtung
auf einer streifenförmigen Oberfläche des hier nicht gezeigten Substrats
erzielen.In this exemplary embodiment, the
Fig. 4 zeigt den Mündungsbereich einer Plasmadüse, mit der wieder ein rotationssymmetrischer,
verhältnismäßig scharf gebündelter Plasmastrahl 28" erzeugt
wird. Zu diesem Zweck bildet das Mundstück 26" eine verhältnismäßig
kleine kreisförmige Düsenöffnung 48. Die Einspeisung des Precursormaterials
erfolgt wieder über eine Lanze 32, die hier jedoch erst stromabwärts der Düsenöffnung
48 in den Plasmastrahl 28" mündet. Diese Art der Einspeisung ist unter
anderem in den Fällen vorteilhaft, in denen das Precursormaterial Kohlenstoff
oder andere Substanzen enthält, die zur Bildung elektrisch leitfähiger Niederschläge
neigen. Wenn die Eispeisung eines solchen Precursorgases in der Mündung
oder gar stromaufwärts der Mündung der Plasmadüse erfolgt, so kann es
aufgrund von Rückströmungen innerhalb des Düsenkanals 12 der Plasmadüse
zur Bildung einer leitfähigen Schicht auf der Oberfläche des Keramikrohres 14
und damit zu einem Kurzschluß zwischen der Elektrode 18 und dem Gehäuse
10 kommen. Diese Gefahr wird mit der in Figur 4 gezeigten Anordnung vermieden.4 shows the mouth region of a plasma nozzle, with which a rotationally symmetrical,
relatively sharply
Weiterhin illustriert Figur 4 eine Verfahrensvariante, bei der der Plasmastrahl
28" mit Hilfe einer die Düsenöffnung 48 konzentrisch umgebenden Begasungsdüse
50 mit einem Schutzgas 52 begast wird. So läßt sich beispielsweise durchFIG. 4 also illustrates a method variant in which the
Verwendung von Stickstoff als Schutzgas und auch als Arbeitsgas eine Oxidation der Reaktanden des Precursormaterials und/oder des Reaktionsprodukts verhindern.Use of nitrogen as a protective gas and also as an oxidizing gas the reactants of the precursor material and / or the reaction product prevent.
Fig. 5 illustriert eine Verfahrensvariante, bei der die Einspeisung des Precursormaterials
mit Hilfe eines isolierenden Röhrchens 54 koaxial durch das Innere
des Gehäuses 10 und der Elektrode 18 hindurch erfolgt. Diese Anordnung hat
aufgrund ihrer vollkommenen Symmetrie den Vorteil, daß eine gleichmäßige
Verteilung des Precursormaterials im Plasmastrahl 28" erreicht wird. Weiterhin
besteht bei dieser Ausführungsform die vorteilhafte Möglichkeit, den Einspeisungsort
des Precursormaterials je nach Material und Prozeßbedingungen zu
variieren, indem das Röhrchen 54 weiter vorgeschoben oder zurückgezogen
wird. Insbesondere kann das Röhrchen 54 auch so weit zurückgezogen werden,
daß die Einspeisung innerhalb des stromabwärtigen Drittels des Düsenkanals
12 erfolgt. Da der Plasmastrahl 28" durch Berührung des Arbeitsgases mit dem
Lichtbogen 22 erzeugt wird, der sich hier schraubenförmig um das Röhrchen 54
windet, kann auch schon im stromabwärtigen Bereich des Düsenkanals 12 von
einem Plasmastrahl gesprochen werden, so daß auch in diesem Fall die Einspeisung
noch in den Plasmastrahl erfolgt. Allerdings wird bei dieser Ausführungsform
des Verfahrens das Precursormaterial aufgrund der Einschnürung des
Plasmas im Mündungsbereich der Düse generell etwas höheren Temperaturen
ausgesetzt werden. Unter Umständen kann ein - geringer - Anteil des Precursormaterials
auch durch direkte Berührung mit dem Lichtbogen 22 zerstört werden.
Dies kann jedoch auch einen positiven Effekt haben, da so für bestimmte
Bestandteile des Precursormaterials hohe Anregungsenergien zur Verfügung stehen.5 illustrates a method variant in which the feed of the precursor material
with the help of an insulating
Mit der in Figur 2 gezeigten Plasmadüse läßt sich ein vergleichbarer Effekt dadurch
erzielen, daß der Durchsatz und/oder die Verdrallung des Arbeitsgases
erhöht wird. Dies hat zur Folge, daß die Äste des Lichtbogens 22, die sich auf
die Wände des Gehäuses 10 bzw. des Mundstücks 26' verzweigen, tiefer in die
Venturidüse 36 eindringen und gegebenenfalls schleifenförmig aus der Düsenöffnung
"herausgeblasen" werden, so daß ein mehr oder minder großer Teil des
zugeführten Precursorgases mit dem Lichtbogen in Berührung kommt.A comparable effect can thereby be achieved with the plasma nozzle shown in FIG
achieve that the throughput and / or swirl of the working gas
is increased. As a result, the branches of the
In der vorstehenden Beschreibung wurde anhand von vier Ausführungsbeispielen
eine Vielzahl von Gestaltungsmöglichkeiten der Plasmadüse und des Einspeisungssystems
illustriert, die sich auf auch andere Weise miteinander kombinieren
lassen. So können beispielsweise auch die kreisförmigen Düsenöffnungen
gemäß Figur 1, 4 oder 5 als Venturidüsen analog zu der Venturidüse 36 in Figur
2 gestaltet und für die Ansaugung des Precursorgases genutzt werden. Umgekehrt
kann auch bei der Breitschlitzdüse gemäß Figur 2 die Einspeisung des
Precursormaterials stromabwärts des Mundstücks 26' in den Plasmastrahl 28'
oder in den Düsenkanal 12 hinein erfolgen. Eine Außenbegasung des Plasmastrahls
mit dem Schutzgas 52, wie sie in Figur 4 gezeigt, läßt sich auch bei den
übrigen Ausführungsbeispielen realisieren.The above description was based on four exemplary embodiments
a variety of design options for the plasma nozzle and the feed system
illustrated that combine in other ways
to let. For example, the circular nozzle openings
1, 4 or 5 as Venturi nozzles analogous to
In Laborversuchen, bei denen Hexemethyldisiloxan, Tetraethoxysilan oder Propan als Precursorgas eingesetzt wurde, konnten mit dem erfindungsgemäßen Verfahren Beschichtungsraten von 300 - 400 nm/serreicht werden. Die Beschichtungen wiesen eine gute Haftung zum Untergrund auf und waren stabil gegen alkoholische Lösungsmittel.In laboratory tests in which hexemethyldisiloxane, tetraethoxysilane or propane was used as a precursor gas could with the invention Process coating rates of 300 - 400 nm / ser can be achieved. The coatings showed good adhesion to the substrate and were stable against alcoholic solvents.
Schließlich ist auch eine Verfahrensvariante denkbar, bei der das Precursormaterial zusammen mit dem Substrat in den Plasmastrahl zugeführt wird, etwa indem das Precursormaterial z. B. mittels Aerosol oder Ultraschall, durch Bedampfen, durch Spritzen, Rollen oder Rakeln oder elektrostatisch auf die Oberfläche des Substrats aufgebracht wird, bevor diese Oberfläche mit dem Plasmastrahl behandelt wird.Finally, a method variant is also conceivable in which the precursor material is fed together with the substrate into the plasma jet, for example by the precursor material z. B. by means of aerosol or ultrasound, by vapor deposition, by spraying, rolling or knife coating or electrostatically on the surface of the substrate is applied before this surface with the plasma jet is treated.
Claims (13)
- A method for coating surfaces,wherein a plasma jet (28; 28', 28'') is produced by conveying a working gas through an excitation zone (12),wherein a precursor material is introduced into the plasma jet separately of the working gas,wherein a reaction of the precursor material is triggered with the aid of the plasma jet,wherein the reaction product is deposited on the surface (34), andwherein the reaction as well as the deposition take place under atmospheric pressure,that an arc discharge is produced by applying a high-frequency A.C. voltage to electrodes (10, 18) arranged within the excitation zone.
- The method according to claim 1,
characterized in that the precursor material contains liquid and/or solid components in the state, in which it is introduced into the plasma jet. - The method according to claim 1 or 2,
characterized in that the precursor material is introduced into an outlet opening (36; 48), through which the plasma jet emerges from the excitation zone (12). - The method according to claim 3,
characterized in that the precursor gas is introduced into the outlet opening that is realized in the form of a Venturi nozzle (36) by utilizing the Venturi effect. - The method according to claim 1 or 2,
characterized in that the precursor material is introduced into the plasma jet downstream of an outlet opening (48), through which the plasma jet (28') emerges from the excitation zone (12). - The method according to claim 1 or 2,
characterized in that the precursor material is introduced into the plasma jet being produced in the downstream region of the excitation zone (12). - A device for coating surfaces (34),with a tubular, electrically conductive housing (10) that forms a nozzle channel (12),with an electrode (18) that is coaxially arranged in the nozzle channel (12), andwith a supply device (32; 36, 38, 40) for introducing a precursor material into the plasma jet,that a high-frequency generator is provided for applying an A.C. voltage between the electrode (18) and the housing (10) in order to produce an arc discharge.
- The device according to claim 7,
characterized in that the housing (10) contains a swirling device (16) for swirling the working gas in the nozzle channel (12). - The device according to claim 7 or 8,
characterized in that the supply device for the precursor gas consists of a lancet (32) that opens into the plasma jet downstream of the outlet of the nozzle channel (12). - The device according to claim 9,
characterized in that a tubular mouth piece (26) of electrically insulating material is inserted into the outlet of the nozzle channel (12), and in that the lancet (32) opens into the mouth piece (26). - The device according to claim 7 or 8,
characterized in that the supply device for the precursor material consists of a Venturi nozzle (36) that is situated in the outlet of the nozzle channel (12). - The device according to claim 7 or 8,
characterized in that the supply device for the precursor gas consists of a small electrically insulating tube (54) that coaxially extends through the plasma nozzle and the outlet of which may be selectively situated inside or outside the nozzle channel (12). - The device according to one of claims 7-12,
characterized in that an inert gas nozzle (50) surrounds the outlet of the plasma nozzle (10) and serves for gassing the emerging plasma jet with an inert gas (52).
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE29919142U | 1999-10-30 | ||
DE29919142U DE29919142U1 (en) | 1999-10-30 | 1999-10-30 | Plasma nozzle |
PCT/EP2000/002401 WO2001032949A1 (en) | 1999-10-30 | 2000-03-17 | Method and device for plasma coating surfaces |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1230414A1 EP1230414A1 (en) | 2002-08-14 |
EP1230414B1 true EP1230414B1 (en) | 2004-10-06 |
Family
ID=8081000
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP00926739A Expired - Lifetime EP1230414B1 (en) | 1999-10-30 | 2000-03-17 | Method and device for plasma coating surfaces |
Country Status (7)
Country | Link |
---|---|
US (1) | US6800336B1 (en) |
EP (1) | EP1230414B1 (en) |
JP (1) | JP4082905B2 (en) |
AT (1) | ATE278817T1 (en) |
DE (2) | DE29919142U1 (en) |
ES (1) | ES2230098T3 (en) |
WO (1) | WO2001032949A1 (en) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008029681A1 (en) | 2008-06-23 | 2009-12-24 | Plasma Treat Gmbh | Method and device for applying a layer, in particular a self-cleaning and / or antimicrobial photocatalytic layer, to a surface |
DE102008058783A1 (en) | 2008-11-24 | 2010-05-27 | Plasmatreat Gmbh | Process for the atmospheric coating of nano-surfaces |
DE102009048397A1 (en) * | 2009-10-06 | 2011-04-07 | Plasmatreat Gmbh | Atmospheric pressure plasma process for producing surface modified particles and coatings |
WO2012123530A1 (en) | 2011-03-16 | 2012-09-20 | Reinhausen Plasma Gmbh | Coating, and method and device for coating |
WO2013014212A2 (en) | 2011-07-25 | 2013-01-31 | Eckart Gmbh | Method for applying a coating to a substrate, coating, and use of particles |
TWI384085B (en) * | 2009-05-07 | 2013-02-01 | Univ Kao Yuan | Reciprocating two-section atmospheric pressure plasma coating system |
EP2644739A1 (en) | 2012-03-29 | 2013-10-02 | BSH Bosch und Siemens Hausgeräte GmbH | Method for passivating a metal surface and domestic appliance, in particular domestic dishwasher with a wall portion |
DE102012102721A1 (en) | 2012-03-29 | 2013-10-02 | BSH Bosch und Siemens Hausgeräte GmbH | Method for passivating a metal surface |
WO2015055486A1 (en) | 2013-10-14 | 2015-04-23 | Plasma Innovations GmbH | Production method for a plasma-coated molded body and component |
DE102014219979A1 (en) | 2014-10-01 | 2016-04-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Composite of substrate, plasma polymer layer, mixed layer and cover layer |
DE102015121253A1 (en) | 2015-12-07 | 2017-06-08 | Plasmatreat Gmbh | Apparatus for generating an atmospheric plasma jet for treating the surface of a workpiece |
DE102016101456A1 (en) | 2016-01-27 | 2017-07-27 | Plasmatreat Gmbh | Injection molded component with insert, process for its manufacture and uses therefor |
WO2017129582A1 (en) | 2016-01-27 | 2017-08-03 | Plasmatreat Gmbh | Injection-molded component with insert part, method for producing same, and uses thereof |
DE102016104130A1 (en) | 2016-03-07 | 2017-09-07 | Plasmatreat Gmbh | Method for coating a component surface and method for producing a coating material |
DE102016104128A1 (en) | 2016-03-07 | 2017-09-07 | Plasmatreat Gmbh | Method for coating a component surface, coated component and use of a precursor material |
DE102017122059A1 (en) * | 2017-09-22 | 2019-03-28 | Plasma Innovations GmbH | Method for producing an end surface and printed circuit board |
WO2021023605A1 (en) | 2019-08-08 | 2021-02-11 | Plasmatreat Gmbh | Method for equipping an electronic display with a display screen protector |
WO2024068623A1 (en) | 2022-09-29 | 2024-04-04 | Plasmatreat Gmbh | Plasma treatment with liquid cooling |
DE102023106618A1 (en) | 2022-09-29 | 2024-04-04 | Plasmatreat Gmbh | Plasma treatment with liquid cooling |
Families Citing this family (240)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1170066A1 (en) | 2000-07-05 | 2002-01-09 | Förnsel, Peter | Process and apparatus for cleaning rollers and bands |
BR0114200B1 (en) * | 2000-10-04 | 2011-05-03 | "Method and apparatus for forming a coating on a substrate". | |
DE10061828B4 (en) * | 2000-12-12 | 2011-03-31 | Plasmatreat Gmbh | Method for introducing material into a plasma jet and plasma nozzle for carrying out the method |
JP4678973B2 (en) * | 2001-03-29 | 2011-04-27 | 西日本プラント工業株式会社 | Apparatus and method for generating plasma arc of thermal spray torch |
DE10145131B4 (en) * | 2001-09-07 | 2004-07-08 | Pva Tepla Ag | Device for generating an active gas jet |
JP4923364B2 (en) * | 2001-09-10 | 2012-04-25 | 株式会社安川電機 | Reactive gas generator |
US6841201B2 (en) * | 2001-12-21 | 2005-01-11 | The Procter & Gamble Company | Apparatus and method for treating a workpiece using plasma generated from microwave radiation |
TW200409669A (en) * | 2002-04-10 | 2004-06-16 | Dow Corning Ireland Ltd | Protective coating composition |
GB0208261D0 (en) * | 2002-04-10 | 2002-05-22 | Dow Corning | An atmospheric pressure plasma assembly |
TW200308187A (en) * | 2002-04-10 | 2003-12-16 | Dow Corning Ireland Ltd | An atmospheric pressure plasma assembly |
NL1020923C2 (en) * | 2002-06-21 | 2003-12-23 | Otb Group Bv | Method and device for manufacturing a catalyst. |
DE60308640T2 (en) * | 2002-08-14 | 2007-08-09 | Limited Company "Proton-21" | METHOD AND DEVICE FOR THE IMPACT COMPRESSION OF A FABRIC AND PLASMA CATHODE THEREFOR |
US20040175498A1 (en) * | 2003-03-06 | 2004-09-09 | Lotfi Hedhli | Method for preparing membrane electrode assemblies |
US8586149B2 (en) * | 2003-06-18 | 2013-11-19 | Ford Global Technologies, Llc | Environmentally friendly reactive fixture to allow localized surface engineering for improved adhesion to coated and non-coated substrates |
JP3871055B2 (en) * | 2003-08-01 | 2007-01-24 | 株式会社ハイデン研究所 | Plasma generation method and plasma generation apparatus |
CH696811A5 (en) * | 2003-09-26 | 2007-12-14 | Michael Dvorak Dr Ing Dipl Phy | Process for coating a substrate surface using a plasma jet. |
GB0323295D0 (en) * | 2003-10-04 | 2003-11-05 | Dow Corning | Deposition of thin films |
EP1714279A2 (en) * | 2004-02-13 | 2006-10-25 | PlasmaTreat GmbH | Method for coating an optical data carrier and corresponding coated optical data carrier |
US20050230350A1 (en) * | 2004-02-26 | 2005-10-20 | Applied Materials, Inc. | In-situ dry clean chamber for front end of line fabrication |
US20080280065A1 (en) * | 2004-04-09 | 2008-11-13 | Peter Fornsel | Method and Device for Generating a Low-Pressure Plasma and Applications of the Low-Pressure Plasma |
US7122949B2 (en) * | 2004-06-21 | 2006-10-17 | Neocera, Inc. | Cylindrical electron beam generating/triggering device and method for generation of electrons |
JP2006114450A (en) * | 2004-10-18 | 2006-04-27 | Yutaka Electronics Industry Co Ltd | Plasma generating device |
EP1807548A2 (en) * | 2004-10-29 | 2007-07-18 | Dow Gloval Technologies Inc. | Abrasion resistant coatings by plasma enhanced chemical vapor deposition |
GB0424532D0 (en) * | 2004-11-05 | 2004-12-08 | Dow Corning Ireland Ltd | Plasma system |
WO2006048649A1 (en) * | 2004-11-05 | 2006-05-11 | Dow Corning Ireland Limited | Plasma system |
JP4494942B2 (en) * | 2004-11-19 | 2010-06-30 | 積水化学工業株式会社 | Plasma processing equipment |
DE102005004280A1 (en) | 2005-01-28 | 2006-08-03 | Degussa Ag | Process for producing a composite |
US20060172081A1 (en) * | 2005-02-02 | 2006-08-03 | Patrick Flinn | Apparatus and method for plasma treating and dispensing an adhesive/sealant onto a part |
JP4817407B2 (en) * | 2005-03-07 | 2011-11-16 | 学校法人東海大学 | Plasma generating apparatus and plasma generating method |
EP1871921B1 (en) * | 2005-03-22 | 2021-04-28 | Erbslöh Aluminium GmbH | Method for partial or complete coating of the surfaces of an aluminium material component |
DE102005013729A1 (en) * | 2005-03-22 | 2006-10-12 | Erbslöh Aluminium Gmbh | Component used for connecting points of pipelines and connecting elements is made from aluminum with a partial or complete coating partly made from fused soldering particles having a specified degree of melting |
DE102005018926B4 (en) | 2005-04-22 | 2007-08-16 | Plasma Treat Gmbh | Method and plasma nozzle for generating an atmospheric plasma jet generated by means of high-frequency high voltage comprising a device in each case for characterizing a surface of a workpiece |
GB0509648D0 (en) * | 2005-05-12 | 2005-06-15 | Dow Corning Ireland Ltd | Plasma system to deposit adhesion primer layers |
US7517561B2 (en) * | 2005-09-21 | 2009-04-14 | Ford Global Technologies, Llc | Method of coating a substrate for adhesive bonding |
CN100372616C (en) * | 2005-10-12 | 2008-03-05 | 吴德明 | Coating surface manufacturing process |
US8945684B2 (en) * | 2005-11-04 | 2015-02-03 | Essilor International (Compagnie Generale D'optique) | Process for coating an article with an anti-fouling surface coating by vacuum evaporation |
DE102005059706B4 (en) * | 2005-12-12 | 2011-08-18 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 | Process for producing a release layer and substrate surface with release layer |
TW200740306A (en) * | 2006-04-03 | 2007-10-16 | Yueh-Yun Kuo | Low temperature normal pressure non-equilibrium plasma jet electrode component |
DE102006024050B4 (en) * | 2006-05-23 | 2009-08-20 | Daimler Ag | Device for applying a coating to a surface of a workpiece |
JP4890946B2 (en) * | 2006-05-31 | 2012-03-07 | 積水化学工業株式会社 | Plasma processing equipment |
US7547861B2 (en) * | 2006-06-09 | 2009-06-16 | Morten Jorgensen | Vortex generator for plasma treatment |
US20070284342A1 (en) * | 2006-06-09 | 2007-12-13 | Morten Jorgensen | Plasma treatment method and apparatus |
US7744984B2 (en) * | 2006-06-28 | 2010-06-29 | Ford Global Technologies, Llc | Method of treating substrates for bonding |
DE102006038780A1 (en) * | 2006-08-18 | 2008-02-21 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method and device for producing a coating |
ES2534215T3 (en) * | 2006-08-30 | 2015-04-20 | Oerlikon Metco Ag, Wohlen | Plasma spray device and a method for introducing a liquid precursor into a plasma gas system |
EP1895818B1 (en) | 2006-08-30 | 2015-03-11 | Sulzer Metco AG | Plasma spraying device and a method for introducing a liquid precursor into a plasma gas system |
TW200814170A (en) * | 2006-09-13 | 2008-03-16 | Ind Tech Res Inst | Method of adjusting surface characteristic of a substrate |
EP2092590A4 (en) * | 2006-11-10 | 2011-01-12 | Univ California | Atmospheric pressure plasma-induced graft polymerization |
DE202007018327U1 (en) | 2006-11-23 | 2008-08-07 | Plasmatreat Gmbh | Apparatus for generating a plasma |
US20080138532A1 (en) * | 2006-12-12 | 2008-06-12 | Ford Global Technologies, Llc | Method for decorating a plastic component with a coating |
US7981219B2 (en) * | 2006-12-12 | 2011-07-19 | Ford Global Technologies, Llc | System for plasma treating a plastic component |
DE102007011235A1 (en) | 2007-03-06 | 2008-09-11 | Plasma Treat Gmbh | Method and device for treating a surface of a workpiece |
DE102007032496B3 (en) * | 2007-07-12 | 2009-01-29 | Maschinenfabrik Reinhausen Gmbh | Apparatus for generating a plasma jet |
DE102007041329B4 (en) * | 2007-08-31 | 2016-06-30 | Thermico Gmbh & Co. Kg | Plasma torch with axial powder injection |
EP2232142A2 (en) * | 2008-01-18 | 2010-09-29 | Innovent e.V. Technologieentwicklung | Device and method for maintaining and operating a flame |
KR100999583B1 (en) * | 2008-02-22 | 2010-12-08 | 주식회사 유진테크 | Apparatus and method for processing substrate |
DE102008018939A1 (en) | 2008-04-15 | 2009-10-22 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Structured electrically conductive metal layers producing method for use during production of electronic circuit utilized for e.g. smart label, involves removing solvent from connection and transferring connection into layer |
TWI641292B (en) | 2008-08-04 | 2018-11-11 | Agc北美平面玻璃公司 | Plasma source |
DE102008052102B4 (en) * | 2008-10-20 | 2012-03-22 | INPRO Innovationsgesellschaft für fortgeschrittene Produktionssysteme in der Fahrzeugindustrie mbH | Device for pre- and / or after-treatment of a component surface by means of a plasma jet |
US20100151236A1 (en) * | 2008-12-11 | 2010-06-17 | Ford Global Technologies, Llc | Surface treatment for polymeric part adhesion |
TWI407842B (en) * | 2008-12-31 | 2013-09-01 | Ind Tech Res Inst | Wide area atmospheric pressure plasma jet apparatus |
DE102009004968B4 (en) * | 2009-01-14 | 2012-09-06 | Reinhausen Plasma Gmbh | Beam generator for generating a collimated plasma jet |
CA3198302A1 (en) | 2009-02-08 | 2010-08-12 | Ap Solutions, Inc. | Plasma source and method for removing materials from substrates utilizing pressure waves |
DE102010016926A1 (en) | 2009-05-16 | 2010-12-30 | Eichler Gmbh & Co.Kg | Electrostatic lacquering of electrically non-conductive parts e.g. plastic-, glass- or ceramic parts by surface conductivity-producing layers, comprises dryly coating non-conductive parts with metal conducting and semi-conducting layers |
US10049859B2 (en) * | 2009-07-08 | 2018-08-14 | Aixtron Se | Plasma generating units for processing a substrate |
EP2279801B1 (en) | 2009-07-27 | 2015-01-28 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Coating methods using plasma jet and plasma coating apparatus |
JP2011060688A (en) * | 2009-09-14 | 2011-03-24 | Kasuga Electric Works Ltd | Plasma surface treatment device |
TW201117677A (en) * | 2009-11-02 | 2011-05-16 | Ind Tech Res Inst | Plasma system including inject device |
US20110132543A1 (en) * | 2009-12-09 | 2011-06-09 | Electronics And Telecommunications Research Institute | Brush type plasma surface treatment apparatus |
DE102010055532A1 (en) | 2010-03-02 | 2011-12-15 | Plasma Treat Gmbh | A method for producing a multilayer packaging material and method for applying an adhesive, and apparatus therefor |
DE102010011643A1 (en) | 2010-03-16 | 2011-09-22 | Christian Buske | Apparatus and method for the plasma treatment of living tissue |
DE102010014552A1 (en) | 2010-03-22 | 2011-09-22 | Timo Brummer | Coating a substrate surface using a plasma beam or plasma beams, comprises directing a beam of an atmospheric low-temperature plasma to the substrate surface according to respective plasma coating nozzle in opposition to thermal injection |
US9324576B2 (en) | 2010-05-27 | 2016-04-26 | Applied Materials, Inc. | Selective etch for silicon films |
JP2011252085A (en) | 2010-06-02 | 2011-12-15 | Honda Motor Co Ltd | Plasma film deposition method |
JP5191524B2 (en) * | 2010-11-09 | 2013-05-08 | 株式会社新川 | Plasma device and manufacturing method thereof |
DE102010044114A1 (en) | 2010-11-18 | 2012-05-24 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Process for joining substrates and composite structure obtainable therewith |
US10283321B2 (en) | 2011-01-18 | 2019-05-07 | Applied Materials, Inc. | Semiconductor processing system and methods using capacitively coupled plasma |
US8999856B2 (en) | 2011-03-14 | 2015-04-07 | Applied Materials, Inc. | Methods for etch of sin films |
US9064815B2 (en) | 2011-03-14 | 2015-06-23 | Applied Materials, Inc. | Methods for etch of metal and metal-oxide films |
JP2014527575A (en) | 2011-07-25 | 2014-10-16 | エッカルト ゲゼルシャフト ミット ベシュレンクテル ハフツングEckart GmbH | Methods for substrate coating and use of additive-containing powdered coating materials in such methods |
DE102011052120A1 (en) | 2011-07-25 | 2013-01-31 | Eckart Gmbh | Use of specially coated, powdery coating materials and coating methods using such coating materials |
DE102011052121A1 (en) | 2011-07-25 | 2013-01-31 | Eckart Gmbh | Coating process using special powder coating materials and use of such coating materials |
DE102011052119A1 (en) | 2011-07-25 | 2013-01-31 | Eckart Gmbh | Coating method of particle-containing powdery coating material used for automobile component, involves performing flame spraying, high-speed flame spraying, thermal plasma spraying and/or non-thermal plasma spraying method |
DE102011052306A1 (en) | 2011-07-29 | 2013-01-31 | Jokey Plastik Sohland Gmbh | Process for producing a permeation-inhibiting coating of plastic containers and coating plant |
TWI461113B (en) * | 2011-08-24 | 2014-11-11 | Nat Univ Tsing Hua | Atmospheric pressure plasma jet device |
US8808563B2 (en) | 2011-10-07 | 2014-08-19 | Applied Materials, Inc. | Selective etch of silicon by way of metastable hydrogen termination |
KR20130108536A (en) * | 2012-01-17 | 2013-10-04 | 시너스 테크놀리지, 인코포레이티드 | Deposition of graphene or conjugated carbons using radical reactor |
DE102012003563B4 (en) * | 2012-02-23 | 2017-07-06 | Drägerwerk AG & Co. KGaA | Device for disinfecting wound treatment |
US9267739B2 (en) | 2012-07-18 | 2016-02-23 | Applied Materials, Inc. | Pedestal with multi-zone temperature control and multiple purge capabilities |
US9373517B2 (en) | 2012-08-02 | 2016-06-21 | Applied Materials, Inc. | Semiconductor processing with DC assisted RF power for improved control |
US9023734B2 (en) | 2012-09-18 | 2015-05-05 | Applied Materials, Inc. | Radical-component oxide etch |
US9390937B2 (en) | 2012-09-20 | 2016-07-12 | Applied Materials, Inc. | Silicon-carbon-nitride selective etch |
US9132436B2 (en) | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
KR101996433B1 (en) * | 2012-11-13 | 2019-07-05 | 삼성디스플레이 주식회사 | Thin film forming apparatus and the thin film forming method using the same |
US8969212B2 (en) | 2012-11-20 | 2015-03-03 | Applied Materials, Inc. | Dry-etch selectivity |
US8980763B2 (en) | 2012-11-30 | 2015-03-17 | Applied Materials, Inc. | Dry-etch for selective tungsten removal |
US8921234B2 (en) | 2012-12-21 | 2014-12-30 | Applied Materials, Inc. | Selective titanium nitride etching |
CN103074569A (en) * | 2013-01-29 | 2013-05-01 | 电子科技大学 | Atmosphere glow discharge low-temperature plasma coating device |
US10256079B2 (en) | 2013-02-08 | 2019-04-09 | Applied Materials, Inc. | Semiconductor processing systems having multiple plasma configurations |
US9362130B2 (en) | 2013-03-01 | 2016-06-07 | Applied Materials, Inc. | Enhanced etching processes using remote plasma sources |
US9040422B2 (en) | 2013-03-05 | 2015-05-26 | Applied Materials, Inc. | Selective titanium nitride removal |
US20140271097A1 (en) | 2013-03-15 | 2014-09-18 | Applied Materials, Inc. | Processing systems and methods for halide scavenging |
JP6123796B2 (en) * | 2013-03-15 | 2017-05-10 | 東レ株式会社 | Plasma CVD apparatus and plasma CVD method |
US9493879B2 (en) | 2013-07-12 | 2016-11-15 | Applied Materials, Inc. | Selective sputtering for pattern transfer |
US9773648B2 (en) | 2013-08-30 | 2017-09-26 | Applied Materials, Inc. | Dual discharge modes operation for remote plasma |
DE102013017109A1 (en) | 2013-10-15 | 2015-04-16 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method and device for producing particles in an atmospheric pressure plasma |
WO2015061306A1 (en) * | 2013-10-25 | 2015-04-30 | United Technologies Corporation | Plasma spraying system with adjustable coating medium nozzle |
US9576809B2 (en) | 2013-11-04 | 2017-02-21 | Applied Materials, Inc. | Etch suppression with germanium |
US9520303B2 (en) | 2013-11-12 | 2016-12-13 | Applied Materials, Inc. | Aluminum selective etch |
US11432393B2 (en) | 2013-11-13 | 2022-08-30 | Hypertherm, Inc. | Cost effective cartridge for a plasma arc torch |
US11278983B2 (en) | 2013-11-13 | 2022-03-22 | Hypertherm, Inc. | Consumable cartridge for a plasma arc cutting system |
US11684995B2 (en) | 2013-11-13 | 2023-06-27 | Hypertherm, Inc. | Cost effective cartridge for a plasma arc torch |
US9981335B2 (en) | 2013-11-13 | 2018-05-29 | Hypertherm, Inc. | Consumable cartridge for a plasma arc cutting system |
US10456855B2 (en) | 2013-11-13 | 2019-10-29 | Hypertherm, Inc. | Consumable cartridge for a plasma arc cutting system |
ITPD20130310A1 (en) | 2013-11-14 | 2015-05-15 | Nadir S R L | METHOD FOR THE GENERATION OF AN ATMOSPHERIC PLASMA JET OR JET AND ATMOSPHERIC PLASMA MINITORCIA DEVICE |
US9245762B2 (en) | 2013-12-02 | 2016-01-26 | Applied Materials, Inc. | Procedure for etch rate consistency |
WO2015088069A1 (en) * | 2013-12-11 | 2015-06-18 | 주식회사 에이피아이 | Plasma generating device |
DE102014100385A1 (en) * | 2014-01-15 | 2015-07-16 | Plasma Innovations GmbH | Plasma coating method for depositing a functional layer and separator |
US9396989B2 (en) | 2014-01-27 | 2016-07-19 | Applied Materials, Inc. | Air gaps between copper lines |
US9385028B2 (en) | 2014-02-03 | 2016-07-05 | Applied Materials, Inc. | Air gap process |
US9499898B2 (en) | 2014-03-03 | 2016-11-22 | Applied Materials, Inc. | Layered thin film heater and method of fabrication |
RU2558713C1 (en) * | 2014-03-11 | 2015-08-10 | Рузиль Рашитович Саубанов | Arrangement of alternating current pulse plasma source |
US9299537B2 (en) | 2014-03-20 | 2016-03-29 | Applied Materials, Inc. | Radial waveguide systems and methods for post-match control of microwaves |
US9903020B2 (en) | 2014-03-31 | 2018-02-27 | Applied Materials, Inc. | Generation of compact alumina passivation layers on aluminum plasma equipment components |
US20150349307A1 (en) * | 2014-05-27 | 2015-12-03 | GM Global Technology Operations LLC | Method for preparing a coated lithium battery component |
US9309598B2 (en) | 2014-05-28 | 2016-04-12 | Applied Materials, Inc. | Oxide and metal removal |
US9406523B2 (en) | 2014-06-19 | 2016-08-02 | Applied Materials, Inc. | Highly selective doped oxide removal method |
US9378969B2 (en) | 2014-06-19 | 2016-06-28 | Applied Materials, Inc. | Low temperature gas-phase carbon removal |
EP2959992A1 (en) | 2014-06-26 | 2015-12-30 | Eckart GmbH | Method for producing a particulate-containing aerosol |
US9425058B2 (en) | 2014-07-24 | 2016-08-23 | Applied Materials, Inc. | Simplified litho-etch-litho-etch process |
US9378978B2 (en) | 2014-07-31 | 2016-06-28 | Applied Materials, Inc. | Integrated oxide recess and floating gate fin trimming |
US9496167B2 (en) | 2014-07-31 | 2016-11-15 | Applied Materials, Inc. | Integrated bit-line airgap formation and gate stack post clean |
US9659753B2 (en) | 2014-08-07 | 2017-05-23 | Applied Materials, Inc. | Grooved insulator to reduce leakage current |
EP3180151B1 (en) | 2014-08-12 | 2021-11-03 | Hypertherm, Inc. | Cost effective cartridge for a plasma arc torch |
US9553102B2 (en) | 2014-08-19 | 2017-01-24 | Applied Materials, Inc. | Tungsten separation |
US9368364B2 (en) | 2014-09-24 | 2016-06-14 | Applied Materials, Inc. | Silicon etch process with tunable selectivity to SiO2 and other materials |
US9478434B2 (en) | 2014-09-24 | 2016-10-25 | Applied Materials, Inc. | Chlorine-based hardmask removal |
US9613822B2 (en) | 2014-09-25 | 2017-04-04 | Applied Materials, Inc. | Oxide etch selectivity enhancement |
US9355922B2 (en) | 2014-10-14 | 2016-05-31 | Applied Materials, Inc. | Systems and methods for internal surface conditioning in plasma processing equipment |
US9966240B2 (en) | 2014-10-14 | 2018-05-08 | Applied Materials, Inc. | Systems and methods for internal surface conditioning assessment in plasma processing equipment |
CN104445059A (en) * | 2014-10-27 | 2015-03-25 | 安徽大学 | Alternating-current plasma torch synthetic gas production device |
US11637002B2 (en) | 2014-11-26 | 2023-04-25 | Applied Materials, Inc. | Methods and systems to enhance process uniformity |
JP6508746B2 (en) | 2014-12-05 | 2019-05-08 | エージーシー フラット グラス ノース アメリカ,インコーポレイテッドAgc Flat Glass North America,Inc. | Plasma source using macro particle reduction coating and method of using plasma source with macro particle reduction coating for thin film coating and surface modification |
MX2017007356A (en) | 2014-12-05 | 2018-04-11 | Agc Flat Glass Europe S A | Hollow cathode plasma source. |
US10224210B2 (en) | 2014-12-09 | 2019-03-05 | Applied Materials, Inc. | Plasma processing system with direct outlet toroidal plasma source |
US10573496B2 (en) | 2014-12-09 | 2020-02-25 | Applied Materials, Inc. | Direct outlet toroidal plasma source |
US9502258B2 (en) | 2014-12-23 | 2016-11-22 | Applied Materials, Inc. | Anisotropic gap etch |
US11257693B2 (en) | 2015-01-09 | 2022-02-22 | Applied Materials, Inc. | Methods and systems to improve pedestal temperature control |
US9373522B1 (en) | 2015-01-22 | 2016-06-21 | Applied Mateials, Inc. | Titanium nitride removal |
US9449846B2 (en) | 2015-01-28 | 2016-09-20 | Applied Materials, Inc. | Vertical gate separation |
US9728437B2 (en) | 2015-02-03 | 2017-08-08 | Applied Materials, Inc. | High temperature chuck for plasma processing systems |
US20160225652A1 (en) | 2015-02-03 | 2016-08-04 | Applied Materials, Inc. | Low temperature chuck for plasma processing systems |
US9881805B2 (en) | 2015-03-02 | 2018-01-30 | Applied Materials, Inc. | Silicon selective removal |
KR101636872B1 (en) * | 2015-05-14 | 2016-07-07 | 인하대학교 산학협력단 | Plasma arc apparatus for synthesis gas production |
EP3307030B1 (en) * | 2015-06-02 | 2020-04-29 | FUJI Corporation | Plasma generating device |
JP7073251B2 (en) | 2015-08-04 | 2022-05-23 | ハイパーサーム インコーポレイテッド | Cartridge frame for liquid-cooled plasma arc torch |
US9691645B2 (en) | 2015-08-06 | 2017-06-27 | Applied Materials, Inc. | Bolted wafer chuck thermal management systems and methods for wafer processing systems |
US9741593B2 (en) | 2015-08-06 | 2017-08-22 | Applied Materials, Inc. | Thermal management systems and methods for wafer processing systems |
US9349605B1 (en) | 2015-08-07 | 2016-05-24 | Applied Materials, Inc. | Oxide etch selectivity systems and methods |
US10504700B2 (en) | 2015-08-27 | 2019-12-10 | Applied Materials, Inc. | Plasma etching systems and methods with secondary plasma injection |
AT517694B1 (en) * | 2015-11-12 | 2017-04-15 | Inocon Tech Ges M B H | Apparatus and method for applying a coating |
US9721764B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Method of producing plasma by multiple-phase alternating or pulsed electrical current |
US9721765B2 (en) | 2015-11-16 | 2017-08-01 | Agc Flat Glass North America, Inc. | Plasma device driven by multiple-phase alternating or pulsed electrical current |
US10573499B2 (en) | 2015-12-18 | 2020-02-25 | Agc Flat Glass North America, Inc. | Method of extracting and accelerating ions |
US10242846B2 (en) | 2015-12-18 | 2019-03-26 | Agc Flat Glass North America, Inc. | Hollow cathode ion source |
US10995406B2 (en) * | 2016-04-01 | 2021-05-04 | Universities Space Research Association | In situ tailoring of material properties in 3D printed electronics |
US10504754B2 (en) | 2016-05-19 | 2019-12-10 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US10522371B2 (en) | 2016-05-19 | 2019-12-31 | Applied Materials, Inc. | Systems and methods for improved semiconductor etching and component protection |
US9865484B1 (en) | 2016-06-29 | 2018-01-09 | Applied Materials, Inc. | Selective etch using material modification and RF pulsing |
WO2018020434A1 (en) | 2016-07-26 | 2018-02-01 | BORISSOVA, Anastasiia Olegovna | Tissue tolerable plasma generator and method for the creation of protective film from the wound substrate |
US10629473B2 (en) | 2016-09-09 | 2020-04-21 | Applied Materials, Inc. | Footing removal for nitride spacer |
US10062575B2 (en) | 2016-09-09 | 2018-08-28 | Applied Materials, Inc. | Poly directional etch by oxidation |
US9934942B1 (en) | 2016-10-04 | 2018-04-03 | Applied Materials, Inc. | Chamber with flow-through source |
US9721789B1 (en) | 2016-10-04 | 2017-08-01 | Applied Materials, Inc. | Saving ion-damaged spacers |
US10546729B2 (en) | 2016-10-04 | 2020-01-28 | Applied Materials, Inc. | Dual-channel showerhead with improved profile |
US10062585B2 (en) | 2016-10-04 | 2018-08-28 | Applied Materials, Inc. | Oxygen compatible plasma source |
US10062579B2 (en) | 2016-10-07 | 2018-08-28 | Applied Materials, Inc. | Selective SiN lateral recess |
US9947549B1 (en) | 2016-10-10 | 2018-04-17 | Applied Materials, Inc. | Cobalt-containing material removal |
US9768034B1 (en) | 2016-11-11 | 2017-09-19 | Applied Materials, Inc. | Removal methods for high aspect ratio structures |
US10163696B2 (en) | 2016-11-11 | 2018-12-25 | Applied Materials, Inc. | Selective cobalt removal for bottom up gapfill |
US10242908B2 (en) | 2016-11-14 | 2019-03-26 | Applied Materials, Inc. | Airgap formation with damage-free copper |
US10026621B2 (en) | 2016-11-14 | 2018-07-17 | Applied Materials, Inc. | SiN spacer profile patterning |
DE102016124209A1 (en) | 2016-12-13 | 2018-06-14 | Jokey Plastik Wipperfürth GmbH | Coating device and coating method for plastic containers |
CN110178449B (en) * | 2016-12-23 | 2021-07-23 | 等离子体处理有限公司 | Nozzle assembly and apparatus for producing an atmospheric plasma jet |
US10566206B2 (en) | 2016-12-27 | 2020-02-18 | Applied Materials, Inc. | Systems and methods for anisotropic material breakthrough |
DE102017201559A1 (en) | 2017-01-31 | 2018-08-02 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Atmospheric pressure plasma process for the production of plasma polymer coatings |
US10403507B2 (en) | 2017-02-03 | 2019-09-03 | Applied Materials, Inc. | Shaped etch profile with oxidation |
US10431429B2 (en) | 2017-02-03 | 2019-10-01 | Applied Materials, Inc. | Systems and methods for radial and azimuthal control of plasma uniformity |
US10043684B1 (en) | 2017-02-06 | 2018-08-07 | Applied Materials, Inc. | Self-limiting atomic thermal etching systems and methods |
US10319739B2 (en) | 2017-02-08 | 2019-06-11 | Applied Materials, Inc. | Accommodating imperfectly aligned memory holes |
US10943834B2 (en) | 2017-03-13 | 2021-03-09 | Applied Materials, Inc. | Replacement contact process |
US10319649B2 (en) | 2017-04-11 | 2019-06-11 | Applied Materials, Inc. | Optical emission spectroscopy (OES) for remote plasma monitoring |
US11276590B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Multi-zone semiconductor substrate supports |
US11276559B2 (en) | 2017-05-17 | 2022-03-15 | Applied Materials, Inc. | Semiconductor processing chamber for multiple precursor flow |
US10497579B2 (en) | 2017-05-31 | 2019-12-03 | Applied Materials, Inc. | Water-free etching methods |
US10049891B1 (en) | 2017-05-31 | 2018-08-14 | Applied Materials, Inc. | Selective in situ cobalt residue removal |
JP6341494B2 (en) * | 2017-06-05 | 2018-06-13 | 春日電機株式会社 | Ion generator |
US10920320B2 (en) | 2017-06-16 | 2021-02-16 | Applied Materials, Inc. | Plasma health determination in semiconductor substrate processing reactors |
US10541246B2 (en) | 2017-06-26 | 2020-01-21 | Applied Materials, Inc. | 3D flash memory cells which discourage cross-cell electrical tunneling |
US10727080B2 (en) | 2017-07-07 | 2020-07-28 | Applied Materials, Inc. | Tantalum-containing material removal |
US10541184B2 (en) | 2017-07-11 | 2020-01-21 | Applied Materials, Inc. | Optical emission spectroscopic techniques for monitoring etching |
US10354889B2 (en) | 2017-07-17 | 2019-07-16 | Applied Materials, Inc. | Non-halogen etching of silicon-containing materials |
US10170336B1 (en) | 2017-08-04 | 2019-01-01 | Applied Materials, Inc. | Methods for anisotropic control of selective silicon removal |
US10043674B1 (en) | 2017-08-04 | 2018-08-07 | Applied Materials, Inc. | Germanium etching systems and methods |
US10297458B2 (en) | 2017-08-07 | 2019-05-21 | Applied Materials, Inc. | Process window widening using coated parts in plasma etch processes |
SG11202002725UA (en) | 2017-10-01 | 2020-04-29 | Space Foundry Inc | Modular print head assembly for plasma jet printing |
US10128086B1 (en) | 2017-10-24 | 2018-11-13 | Applied Materials, Inc. | Silicon pretreatment for nitride removal |
US10283324B1 (en) | 2017-10-24 | 2019-05-07 | Applied Materials, Inc. | Oxygen treatment for nitride etching |
US10256112B1 (en) | 2017-12-08 | 2019-04-09 | Applied Materials, Inc. | Selective tungsten removal |
DE102017130353A1 (en) | 2017-12-18 | 2019-06-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Sol-gel based primer layer for PTFE-based coatings and methods of making same |
US10903054B2 (en) | 2017-12-19 | 2021-01-26 | Applied Materials, Inc. | Multi-zone gas distribution systems and methods |
US11328909B2 (en) | 2017-12-22 | 2022-05-10 | Applied Materials, Inc. | Chamber conditioning and removal processes |
US10854426B2 (en) | 2018-01-08 | 2020-12-01 | Applied Materials, Inc. | Metal recess for semiconductor structures |
US10679870B2 (en) | 2018-02-15 | 2020-06-09 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus |
US10964512B2 (en) | 2018-02-15 | 2021-03-30 | Applied Materials, Inc. | Semiconductor processing chamber multistage mixing apparatus and methods |
TWI766433B (en) | 2018-02-28 | 2022-06-01 | 美商應用材料股份有限公司 | Systems and methods to form airgaps |
US10593560B2 (en) | 2018-03-01 | 2020-03-17 | Applied Materials, Inc. | Magnetic induction plasma source for semiconductor processes and equipment |
US10319600B1 (en) | 2018-03-12 | 2019-06-11 | Applied Materials, Inc. | Thermal silicon etch |
US10497573B2 (en) | 2018-03-13 | 2019-12-03 | Applied Materials, Inc. | Selective atomic layer etching of semiconductor materials |
US10573527B2 (en) | 2018-04-06 | 2020-02-25 | Applied Materials, Inc. | Gas-phase selective etching systems and methods |
US10490406B2 (en) | 2018-04-10 | 2019-11-26 | Appled Materials, Inc. | Systems and methods for material breakthrough |
DE102018108881A1 (en) | 2018-04-13 | 2019-10-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Surface-modified silicone, its use in non-stick coatings and composite material containing the same |
US10699879B2 (en) | 2018-04-17 | 2020-06-30 | Applied Materials, Inc. | Two piece electrode assembly with gap for plasma control |
US10886137B2 (en) | 2018-04-30 | 2021-01-05 | Applied Materials, Inc. | Selective nitride removal |
US10755941B2 (en) | 2018-07-06 | 2020-08-25 | Applied Materials, Inc. | Self-limiting selective etching systems and methods |
US10872778B2 (en) | 2018-07-06 | 2020-12-22 | Applied Materials, Inc. | Systems and methods utilizing solid-phase etchants |
US10672642B2 (en) | 2018-07-24 | 2020-06-02 | Applied Materials, Inc. | Systems and methods for pedestal configuration |
US11049755B2 (en) | 2018-09-14 | 2021-06-29 | Applied Materials, Inc. | Semiconductor substrate supports with embedded RF shield |
US10892198B2 (en) | 2018-09-14 | 2021-01-12 | Applied Materials, Inc. | Systems and methods for improved performance in semiconductor processing |
US11062887B2 (en) | 2018-09-17 | 2021-07-13 | Applied Materials, Inc. | High temperature RF heater pedestals |
US11417534B2 (en) | 2018-09-21 | 2022-08-16 | Applied Materials, Inc. | Selective material removal |
US11682560B2 (en) | 2018-10-11 | 2023-06-20 | Applied Materials, Inc. | Systems and methods for hafnium-containing film removal |
US11121002B2 (en) | 2018-10-24 | 2021-09-14 | Applied Materials, Inc. | Systems and methods for etching metals and metal derivatives |
US11437242B2 (en) | 2018-11-27 | 2022-09-06 | Applied Materials, Inc. | Selective removal of silicon-containing materials |
US11721527B2 (en) | 2019-01-07 | 2023-08-08 | Applied Materials, Inc. | Processing chamber mixing systems |
US10920319B2 (en) | 2019-01-11 | 2021-02-16 | Applied Materials, Inc. | Ceramic showerheads with conductive electrodes |
DE102019102831A1 (en) | 2019-02-05 | 2020-08-06 | Plasmatreat Gmbh | Method and device for the plasma treatment of a material web and method and device for producing a hollow extrudate with a plasma-treated inner surface |
DE102019118173A1 (en) | 2019-07-04 | 2021-01-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein | Surface-modified silicone, its use in non-stick coatings and composite material containing it |
CN110315177A (en) * | 2019-08-06 | 2019-10-11 | 河北瓦尔丁科技有限公司 | Plasma power supply torch head accelerates gas path device |
CN113546920B (en) * | 2021-07-20 | 2023-04-07 | 浙江洁美电子科技股份有限公司 | Electric arc burning-off system and paper tape manufactured by using same |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61119664A (en) | 1984-11-16 | 1986-06-06 | Mitsubishi Heavy Ind Ltd | Plasma spraying method |
FR2600229B1 (en) | 1986-06-17 | 1994-09-09 | Metallisation Ind Ste Nle | PLASMA RECHARGING TORCH |
US4916273A (en) | 1987-03-11 | 1990-04-10 | Browning James A | High-velocity controlled-temperature plasma spray method |
US5109150A (en) | 1987-03-24 | 1992-04-28 | The United States Of America As Represented By The Secretary Of The Navy | Open-arc plasma wire spray method and apparatus |
FR2622894B1 (en) * | 1987-11-10 | 1990-03-23 | Electricite De France | PROCESS AND PLANT FOR HYDROPYROLYSIS OF HEAVY HYDROCARBONS BY PLASMA JET, PARTICULARLY H2 / CH4 PLASMA |
JPH0226895A (en) | 1988-07-14 | 1990-01-29 | Fujitsu Ltd | Method and device for synthesizing diamond in vapor phase |
WO1990012123A1 (en) | 1989-03-31 | 1990-10-18 | Leningradsky Politekhnichesky Institut Imeni M.I.Kalinina | Method of treatment with plasma and plasmatron |
SU1835865A1 (en) | 1989-12-01 | 1996-04-10 | Ленинградский Политехнический Институт Им.М.И.Калинина | Method of metal coatings air-plasma spraying |
FR2713667B1 (en) * | 1993-12-15 | 1996-01-12 | Air Liquide | Method and device for deposition at low temperature of a film containing silicon on a non-metallic substrate. |
JP3700177B2 (en) * | 1993-12-24 | 2005-09-28 | セイコーエプソン株式会社 | Atmospheric pressure plasma surface treatment equipment |
US5662266A (en) * | 1995-01-04 | 1997-09-02 | Zurecki; Zbigniew | Process and apparatus for shrouding a turbulent gas jet |
DE19532412C2 (en) | 1995-09-01 | 1999-09-30 | Agrodyn Hochspannungstechnik G | Device for surface pretreatment of workpieces |
US6001426A (en) * | 1996-07-25 | 1999-12-14 | Utron Inc. | High velocity pulsed wire-arc spray |
US6194036B1 (en) * | 1997-10-20 | 2001-02-27 | The Regents Of The University Of California | Deposition of coatings using an atmospheric pressure plasma jet |
JP4446597B2 (en) | 1997-10-20 | 2010-04-07 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | Coating deposit using atmospheric pressure plasma jet |
DE19807086A1 (en) * | 1998-02-20 | 1999-08-26 | Fraunhofer Ges Forschung | Atmospheric pressure plasma deposition for adhesion promoting, corrosion protective, surface energy modification or mechanical, electrical or optical layers |
DE29805999U1 (en) | 1998-04-03 | 1998-06-25 | Agrodyn Hochspannungstechnik G | Device for the plasma treatment of surfaces |
DE29911974U1 (en) | 1999-07-09 | 2000-11-23 | Agrodyn Hochspannungstechnik G | Plasma nozzle |
-
1999
- 1999-10-30 DE DE29919142U patent/DE29919142U1/en not_active Expired - Lifetime
-
2000
- 2000-03-17 DE DE50008155T patent/DE50008155D1/en not_active Expired - Lifetime
- 2000-03-17 ES ES00926739T patent/ES2230098T3/en not_active Expired - Lifetime
- 2000-03-17 AT AT00926739T patent/ATE278817T1/en active
- 2000-03-17 JP JP2001535626A patent/JP4082905B2/en not_active Expired - Fee Related
- 2000-03-17 WO PCT/EP2000/002401 patent/WO2001032949A1/en active IP Right Grant
- 2000-03-17 EP EP00926739A patent/EP1230414B1/en not_active Expired - Lifetime
- 2000-03-17 US US10/111,864 patent/US6800336B1/en not_active Expired - Lifetime
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008029681A1 (en) | 2008-06-23 | 2009-12-24 | Plasma Treat Gmbh | Method and device for applying a layer, in particular a self-cleaning and / or antimicrobial photocatalytic layer, to a surface |
DE102008058783A1 (en) | 2008-11-24 | 2010-05-27 | Plasmatreat Gmbh | Process for the atmospheric coating of nano-surfaces |
TWI384085B (en) * | 2009-05-07 | 2013-02-01 | Univ Kao Yuan | Reciprocating two-section atmospheric pressure plasma coating system |
DE102009048397A1 (en) * | 2009-10-06 | 2011-04-07 | Plasmatreat Gmbh | Atmospheric pressure plasma process for producing surface modified particles and coatings |
WO2012123530A1 (en) | 2011-03-16 | 2012-09-20 | Reinhausen Plasma Gmbh | Coating, and method and device for coating |
WO2013014212A2 (en) | 2011-07-25 | 2013-01-31 | Eckart Gmbh | Method for applying a coating to a substrate, coating, and use of particles |
DE102011052118A1 (en) | 2011-07-25 | 2013-01-31 | Eckart Gmbh | Method for applying a coating to a substrate, coating and use of particles |
US9771652B2 (en) | 2012-03-29 | 2017-09-26 | Plasmatreat Gmbh | Method for passivating a metal surface |
EP2644739A1 (en) | 2012-03-29 | 2013-10-02 | BSH Bosch und Siemens Hausgeräte GmbH | Method for passivating a metal surface and domestic appliance, in particular domestic dishwasher with a wall portion |
DE102012102721A1 (en) | 2012-03-29 | 2013-10-02 | BSH Bosch und Siemens Hausgeräte GmbH | Method for passivating a metal surface |
WO2015055486A1 (en) | 2013-10-14 | 2015-04-23 | Plasma Innovations GmbH | Production method for a plasma-coated molded body and component |
DE102013111306A1 (en) | 2013-10-14 | 2015-04-30 | Ensinger Gmbh | Manufacturing method for a plasma-coated molded body and component |
DE102014219979A1 (en) | 2014-10-01 | 2016-04-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Composite of substrate, plasma polymer layer, mixed layer and cover layer |
WO2016050937A1 (en) | 2014-10-01 | 2016-04-07 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Composite consisting of a substrate, a plasma polymer layer, a mixed layer and a cover layer |
DE102015121253A1 (en) | 2015-12-07 | 2017-06-08 | Plasmatreat Gmbh | Apparatus for generating an atmospheric plasma jet for treating the surface of a workpiece |
DE102016101456A1 (en) | 2016-01-27 | 2017-07-27 | Plasmatreat Gmbh | Injection molded component with insert, process for its manufacture and uses therefor |
WO2017129582A1 (en) | 2016-01-27 | 2017-08-03 | Plasmatreat Gmbh | Injection-molded component with insert part, method for producing same, and uses thereof |
DE102016104130A1 (en) | 2016-03-07 | 2017-09-07 | Plasmatreat Gmbh | Method for coating a component surface and method for producing a coating material |
DE102016104128A1 (en) | 2016-03-07 | 2017-09-07 | Plasmatreat Gmbh | Method for coating a component surface, coated component and use of a precursor material |
DE102017122059A1 (en) * | 2017-09-22 | 2019-03-28 | Plasma Innovations GmbH | Method for producing an end surface and printed circuit board |
WO2019057450A1 (en) | 2017-09-22 | 2019-03-28 | Plasma Innovations GmbH | Method for producing a finishing coating and circuit board |
WO2021023605A1 (en) | 2019-08-08 | 2021-02-11 | Plasmatreat Gmbh | Method for equipping an electronic display with a display screen protector |
WO2024068623A1 (en) | 2022-09-29 | 2024-04-04 | Plasmatreat Gmbh | Plasma treatment with liquid cooling |
DE102023106618A1 (en) | 2022-09-29 | 2024-04-04 | Plasmatreat Gmbh | Plasma treatment with liquid cooling |
Also Published As
Publication number | Publication date |
---|---|
EP1230414A1 (en) | 2002-08-14 |
DE50008155D1 (en) | 2004-11-11 |
US6800336B1 (en) | 2004-10-05 |
ATE278817T1 (en) | 2004-10-15 |
DE29919142U1 (en) | 2001-03-08 |
WO2001032949A1 (en) | 2001-05-10 |
JP2003514114A (en) | 2003-04-15 |
JP4082905B2 (en) | 2008-04-30 |
ES2230098T3 (en) | 2005-05-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1230414B1 (en) | Method and device for plasma coating surfaces | |
DE102006019664B4 (en) | Cold plasma hand-held device for the plasma treatment of surfaces | |
DE4021182C2 (en) | ||
DE19856307C1 (en) | Apparatus for producing a free cold plasma jet | |
EP1292176B1 (en) | Device for the production of an active gas beam | |
WO1999042637A1 (en) | Method and device for coating a substrate, and coated substrate | |
WO2005125286A2 (en) | Device for the treatment of a substrate by means of at least one plasma jet | |
WO2001043512A1 (en) | Plasma nozzle | |
EP0986939A1 (en) | Plasma processing device for surfaces | |
WO2003015122A1 (en) | Device for the coating of objects | |
EP2130414B1 (en) | Device and method for generating a plasma beam | |
EP2054166B1 (en) | Method and device for producing a coating | |
WO2009127540A1 (en) | Device for treating an inner surface of a work piece | |
EP3077122B1 (en) | Compressed air treatment chamber | |
EP1872637B1 (en) | Plasma coating device and method | |
WO2005099320A2 (en) | Method and device for producing low-pressure plasma and the use thereof | |
WO2008061602A1 (en) | Method and device for producing a plasma, and applications of the plasma | |
WO2005117507A2 (en) | Method for removing at least one inorganic layer from a component | |
EP3430864B1 (en) | Plasma nozzle and method of using the plasma nozzle | |
DE10223865B4 (en) | Process for the plasma coating of workpieces | |
WO2011141184A1 (en) | Plasma generator and method for generating and using an ionised gas | |
EP2142679B1 (en) | Method for the plasma-assisted surface treatment of large-volume components | |
DE2229716A1 (en) | METHOD AND EQUIPMENT FOR CHARGING ENERGY OF A REACTIVE MATERIAL BY MEANS OF ARC DISCHARGE | |
DE102013106315B4 (en) | Method and apparatus for generating a physical plasma | |
EP2532214A1 (en) | Hollow funnel-shaped plasma generator |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20020315 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
|
AX | Request for extension of the european patent |
Free format text: AL;LT;LV;MK;RO;SI |
|
17Q | First examination report despatched |
Effective date: 20030901 |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DERANGEWAND Owner name: AGRODYN HOCHSPANNUNGSTECHNIK GMBH |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: FRAUNHOFER-GESELLSCHAFT ZUR FOERDERUNG DERANGEWAND Owner name: PLASMATREAT GMBH |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LI LU MC NL PT SE |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20041006 |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D Free format text: NOT ENGLISH |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D Free format text: GERMAN |
|
REF | Corresponds to: |
Ref document number: 50008155 Country of ref document: DE Date of ref document: 20041111 Kind code of ref document: P |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20050106 |
|
REG | Reference to a national code |
Ref country code: SE Ref legal event code: TRGR |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: NV Representative=s name: TROESCH SCHEIDEGGER WERNER AG |
|
GBT | Gb: translation of ep patent filed (gb section 77(6)(a)/1977) |
Effective date: 20050115 |
|
REG | Reference to a national code |
Ref country code: DK Ref legal event code: T3 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20050317 |
|
LTIE | Lt: invalidation of european patent or patent extension |
Effective date: 20041006 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MC Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20050331 |
|
REG | Reference to a national code |
Ref country code: ES Ref legal event code: FG2A Ref document number: 2230098 Country of ref document: ES Kind code of ref document: T3 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
ET | Fr: translation filed | ||
26N | No opposition filed |
Effective date: 20050707 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20050306 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 17 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: BE Payment date: 20160325 Year of fee payment: 17 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: NL Payment date: 20160324 Year of fee payment: 17 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: ES Payment date: 20160324 Year of fee payment: 17 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20160317 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 18 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20160317 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: IT Payment date: 20160329 Year of fee payment: 17 |
|
PGRI | Patent reinstated in contracting state [announced from national office to epo] |
Ref country code: IT Effective date: 20170710 |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: MM Effective date: 20170401 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NL Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170401 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170317 |
|
PGRI | Patent reinstated in contracting state [announced from national office to epo] |
Ref country code: IT Effective date: 20170710 |
|
REG | Reference to a national code |
Ref country code: BE Ref legal event code: MM Effective date: 20170331 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 19 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170331 |
|
REG | Reference to a national code |
Ref country code: ES Ref legal event code: FD2A Effective date: 20180703 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: ES Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20170318 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: CH Payment date: 20190320 Year of fee payment: 20 Ref country code: GB Payment date: 20190320 Year of fee payment: 20 Ref country code: LU Payment date: 20190320 Year of fee payment: 20 Ref country code: FR Payment date: 20190319 Year of fee payment: 20 Ref country code: DE Payment date: 20190320 Year of fee payment: 20 Ref country code: IE Payment date: 20190319 Year of fee payment: 20 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DK Payment date: 20190322 Year of fee payment: 20 Ref country code: SE Payment date: 20190322 Year of fee payment: 20 Ref country code: AT Payment date: 20190320 Year of fee payment: 20 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R071 Ref document number: 50008155 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: DK Ref legal event code: EUP Expiry date: 20200317 |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: PE20 Expiry date: 20200316 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: MK9A |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: GB Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION Effective date: 20200316 |
|
REG | Reference to a national code |
Ref country code: SE Ref legal event code: EUG |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IE Free format text: LAPSE BECAUSE OF EXPIRATION OF PROTECTION Effective date: 20200317 |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MK07 Ref document number: 278817 Country of ref document: AT Kind code of ref document: T Effective date: 20200317 |