EP0794270B1 - Procédé de production d'un film mince d'oxyde de zinc et procédé de production d'un substrat d'un dispositif semi-conducteur pour la production d'un dispositif de conversion photo-électrique en utilisant ce film - Google Patents

Procédé de production d'un film mince d'oxyde de zinc et procédé de production d'un substrat d'un dispositif semi-conducteur pour la production d'un dispositif de conversion photo-électrique en utilisant ce film Download PDF

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EP0794270B1
EP0794270B1 EP97301408A EP97301408A EP0794270B1 EP 0794270 B1 EP0794270 B1 EP 0794270B1 EP 97301408 A EP97301408 A EP 97301408A EP 97301408 A EP97301408 A EP 97301408A EP 0794270 B1 EP0794270 B1 EP 0794270B1
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Prior art keywords
zinc oxide
thin film
substrate
zinc
oxide thin
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German (de)
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EP0794270A1 (fr
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Kozo Arao
Katsumi Nakagawa
Takaharu Kondo
Yukiko Iwasaki
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Canon Inc
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Canon Inc
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    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00—Electrolytic coating other than with metals
    • C25D9/04—Electrolytic coating other than with metals with inorganic materials
    • C25D9/08—Electrolytic coating other than with metals with inorganic materials by cathodic processes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
    • C25D5/611—Smooth layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/627—Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to a process for the production of a zinc oxide thin film by an electrolytic or electrochemical growth process, and a photoelectric conversion device using said film.
  • a technique of providing a reflection layer on the back surface of a semiconductor layer for improving an efficiency of collecting rays of light in a long-wavelength region there is known a technique of providing a reflection layer on the back surface of a semiconductor layer for improving an efficiency of collecting rays of light in a long-wavelength region. Further, it is known that provision of a transparent conductive layer having texture between a metal layer and a semiconductor layer exhibits an effect of confining rays of light therein by extending an optical path length of the rays of light reflected from the metal layer and also an effect of suppressing an overcurrent from flowing at the time of shunt. Such a transparent conductive layer has been generally formed of a ZnO film by sputtering.
  • the light confining layer described above is generally formed by resistance heating vacuum deposition, electron beam vacuum deposition, sputtering, ion plating, or CVD, and consequently, there arise problems that the cost required for preparing a target material is high, a complicated vacuum process is unavoidably required for formation of the layer, the depreciation cost for a vacuum apparatus is high, and the material utilization efficiency is not high. This makes significantly higher the cost of photoelectric conversion devices including the light confining layers prepared by such a technique, leading to a large barrier to the industrial applications of solar cells.
  • the zinc oxide thin film formed by electrolysis using an aqueous solution containing zinc ions and nitrate ions is low in cost; however, the process for the formation of such a film has the following problems:
  • An object of the present invention is to provide a process for stably producing a zinc oxide thin film excellent in adhesion property to a substrate by electrolysis.
  • a process for the production of a zinc oxide thin film comprising the step of applying a current between a conductive substrate immersed in an aqueous solution containing at least nitrate ions, zinc ions, and a carbohydrate, and an electrode immersed in the solution, whereby forming a zinc oxide thin film on said conductive substrate.
  • the concentration of each of the nitrate ions and zinc ions is preferably in a range from 0.001 mol/l to 1.0 mol/l, more preferably, in a range from 0.01 mol/l to 0.5 mol/l, most preferably, in a range from 0.1 mol/l to 0.25 mol/l.
  • the content of the carbohydrate in the aqueous solution is preferably in a range from 0.001 g/l to 300 g/l, more preferably, in a range from 0.005 g/l to 100 g/l, most preferably, in a range from 0.01 g/l to 60 g/l.
  • the heating means for heating the conductive substrate there can be used a lamp heater or a hot water tank provided separately from the film formation tank.
  • the uniformity enhancing effect can be particularly given to the zinc oxide thin film in the case of using a monosaccharide such as glucose (grape sugar) or fructose (fruit sugar) as the carbohydrate;
  • the abnormal growth preventive effect can be particularly given to the zinc oxide thin film in the case of using a disaccharide such as maltose (malt sugar) or sucrose (cane sugar) as the carbohydrate;
  • the adhesion property enhancing effect can be particularly given to the zinc oxide thin film in the case of using a polysaccharide such as dextrin or starch as the carbohydrate.
  • two or more of these effects can be given to the zinc oxide thin film in the case of using the above carbohydrates in combination.
  • a zinc electrode as the electrode immersed in the aqueous solution as it is effective to keep constant the composition of the aqueous solution such as the concentration of zinc ions and the pH. This makes it possible to produce a thin film substantially in the same condition for a long period of time without any work for additionally supplying zinc ions in order to keep constant the composition of the electrolytic solution, and hence to form a zinc oxide thin film excellent in uniformity.
  • the aqueous solution is kept at a temperature more than 50°C, and/or in the case where the density of the current applied to the electrode is in a range of from 10 mA/dm 2 to 10 A/dm 2 , it is possible to efficiently produce a zinc oxide thin film excellent in purity.
  • the deposition reaction of ZnO on the surface of the substrate may be considered to be related to intermediate substances such as nitrate ions NO 3- , nitrite ions NO 2- , ammonium ions NH 4+ , hydroxide ions OH - and hydrated ions of zinc.
  • intermediate substances such as nitrate ions NO 3- , nitrite ions NO 2- , ammonium ions NH 4+ , hydroxide ions OH - and hydrated ions of zinc.
  • the reaction related to these intermediate substances possibly does not sufficiently proceed, and consequently, substances other than zinc oxide, for example, zinc would be precipitated, whereby making it difficult to produce a zinc oxide thin film having a high purity.
  • the current density is smaller than 10 mA/dm 2 , there arises another problem that it is difficult to obtain a sufficient reaction rate.
  • the substrate can be formed of a support provided with a metal layer made of a metal having a high reflectance. This makes it possible to enhance the reflectance of the substrate, and hence to produce a photoelectric conversion device having a higher photoelectric conversion efficiency.
  • the size and the orientation of crystal grains of a zinc oxide thin film can be varied by changing the temperature and the concentration of the aqueous solution, and the current density. Consequently, it is possible to produce a zinc oxide thin film having a higher adhesion property as well as a suitable textured surface by forming the zinc oxide thin films of a plurality of layers.
  • the concentration of ions and the current density are parameters closely related to the crystal growth of a zinc oxide thin film.
  • the concentration of metal ions is small as compared with the concentration of metal ions, the degree of nucleation is reduced and thereby the crystal grains become larger.
  • the concentration polarization is generated by precipitation, with a result that crystal grains become fine because the concentration polarization accelerates the nucleation and obstructs the growth of crystal grains.
  • the crystallized state of a zinc oxide thin film can be changed on the basis of these parameters of the aqueous solution.
  • the zinc oxide thin film is desired to be of a stacked structure having a first zinc oxide layer made of fine crystal grains, having a smooth surface, and being excellent in adhesion to the underlying layer; and a second zinc oxide layer made of large crystal grains, having a textured surface, and being excellent in light confining effect.
  • a zinc oxide thin film can exhibit an excellent adhesion property to the substrate in combination with an excellent light confining effect.
  • the size of the first zinc oxide layer is preferably set at a value being one-tenth or less of that of the second zinc oxide layer.
  • the crystal grains of the first zinc oxide layer are preferably grown with the C-axes thereof oriented perpendicularly to the substrate, and the crystal grains of the second zinc oxide layer are preferably grown with the ⁇ 101> directions thereof oriented perpendicularly to the substrate.
  • the orientation of crystal grains can be controlled by the concentration of zinc nitrate.
  • concentration of zinc nitrate is set at 0.1 mol/l
  • the crystal grains are grown with the c-axes thereof oriented obliquely to the substrate, that is, with the hexagonal planes thereof inclined to the substrate.
  • concentration of zinc nitrate is set at 0.025 mol/l or less
  • the crystal grains are grown with the c-axes oriented perpendicularly to the substrate.
  • FIG. 1 shows one example of an apparatus for the formation of a zinc oxide film according to the present invention.
  • Reference numeral 101 indicates an anticorrosion vessel filled with an aqueous solution 102 containing nitrate ions, zinc ions, and a carbohydrate.
  • each of the concentration of nitrate ions and zinc ions is preferably in a range from 0.001 mol/l to 1.0 mol/l, more preferably, in a range from 0.01 mol/l to 0.5 mol/l, most preferably, in a range from 0.1 mol/l to 0.25 mol/l.
  • the supply sources for nitrate ions and zinc ions are not particularly limited.
  • zinc nitrate which is a supply source capable of commonly supplying nitrate ions and zinc ions, and a mixture of a water-soluble nitrate such as ammonium nitrate as a supply source for nitrate ions and a zinc salt such as zinc sulfate as a supply source for zinc ions.
  • the kinds of the carbohydrate are not particularly limited.
  • a monosaccharide such as glucose (grape sugar) or fructose (fruit sugar)
  • a disaccharide such as maltose (malt sugar) or sucrose (cane sugar)
  • a polysaccharide such as dextrin or starch, and the mixture thereof.
  • the content of the carbohydrate in the aqueous solution is preferably in a range from 0.001 g/l to 300 gl, more preferably, in a range from 0.005 g/l to 100 gl, most preferably, in a range from 0.01 g/l to 60 gl.
  • Reference numeral 103 indicates a conductive substrate which is taken as a cathode
  • 104 is a counter electrode which is made of a metal such as platinum, or carbon, other than zinc used for deposition on the substrate in an aqueous phase.
  • the counter electrode 104 is taken as a positive electrode.
  • the substrate 103 as the cathode and the counter electrode 104 as the positive electrode are connected to a power supply 105 via a load resistance 106, and a substantially specified current is carried therebetween from the power supply 105.
  • the current density is preferably in a range from 10 mA/dm 2 to 10 A/dm 2 .
  • a solution circulating system including a suction bar 108 having a plurality of solution sucking ports, an injection bar having a plurality of solution injecting ports, a solution circulating pump 111, a sucked solution flowing pipe 109 connecting the suction bar 108 to the solution circulating pump 111, and an injecting solution flowing pipe 110 connecting the solution injecting bar 107 to the solution circulating pump 111.
  • a solution circulating system may be replaced with a magnetic stirrer.
  • the temperature of the aqueous solution is controlled while being monitored by a heater 112 and a thermocouple 113.
  • the temperature of the aqueous solution is preferably 50°C or more.
  • a second zinc oxide film may be subsequently deposited under a different condition.
  • the substrate 103 may be immersed in a hot water tank 114.
  • the hot water tank 114 is filled with hot water adjusted in temperature by a heater 115 and a thermocouple 116 for heating the substrate 103.
  • FIG. 2 shows an apparatus capable of continuously forming a zinc oxide layer on the surface of a web of a conductive substrate 201 having a flexibility by electrolysis using an aqueous solution.
  • the back surface of the conductive substrate 201 is stuck with an insulating tape (not shown) for preventing the deposition of a zinc oxide film thereon.
  • Reference numeral 201 indicates a feed roller around which the substrate web 201 is wound, and 203 is a take-up roller around which the substrate web 201 is wound after being processed via a plurality of carrier rollers 204. The diameter of each roller is required to be determined on the basis of the material of the substrate web 201 for preventing plastic deformation of the substrate web 201.
  • Reference numeral 205 indicates a hot water tank for heating the substrate web 201.
  • the hot water tank 205 is connected to a circulation system 206 containing a filter for removing contaminants, and its contains a heater 207.
  • Reference numeral 208 indicates an electrolytic phase deposition tank for forming a zinc oxide layer, which is connected to a circulation system 209 containing a filter for removing contaminants.
  • the tank 208 also contains a zinc electrode 210 and a heater 211, and is connected to an external power supply 212.
  • the circulation system 209 has a system for monitoring the concentration of the solution, and adding a new one if necessary.
  • Reference numeral 213 indicates a cleaning tank connected to a circulation system 214 containing a filter for removing contaminants, and 215 is a drying chamber for drying the substrate web 201 by a hot air.
  • a zinc oxide film can be formed at a reduced cost using such an apparatus.
  • the substrate used for the present invention is mainly composed of a support made of a magnetic or non-magnetic metal.
  • a support made of a magnetic or non-magnetic metal there may be suitably used a stainless steel sheet, steel sheet, copper sheet, brass sheet, or an aluminum sheet in terms of the low material cost.
  • Such a metal sheet may be used in the form being cut into a specified shape, or in the form of a web depending on the thickness.
  • the web of a metal sheet can be wound in a coil, and thereby it is suitable for continuous production, and also it makes easy the storage and transformation thereof.
  • a crystalline substrate such as silicon, or a glass or ceramic sheet can be used.
  • the surface of the support may be ground, but in the case of a stainless steel sheet subjected to bright-annealing, it can be used as it is.
  • FIG. 3 is a schematic sectional view of a photoelectric conversion device using a zinc oxide thin film formed in accordance with the process of the present invention.
  • reference numeral 301-1 indicates a support
  • 301-2 indicates a metal layer
  • 301-2 is a transparent conductive layer
  • 302 is a zinc oxide layer formed in the process of the present invention
  • 303 is a semiconductor layer
  • 304 is a transparent conductive layer
  • 305 is a collecting electrode.
  • the support 301-1, metal layer 301-2, and transparent conductive layer 301-3 constitutes a conductive substrate 301 of the present invention.
  • the zinc oxide layer 302 may be of a stack structure of a plurality layers different in size and orientation of crystal grains of zinc oxide.
  • Ray of the sunlight are impinged through the transparent conductive layer 304 to the photoelectric conversion device. Rays of light having short-wavelengths less than 500 nm are mostly absorbed in the next semiconductor layer 303.
  • part of the rays are transmitted through the semiconductor layer 303, passing through the zinc oxide film 302 as the transmission layer, and are reflected from the metal layer 301-2 or support 301-1. The rays of light thus reflected again pass through the zinc oxide film 302 as the transmission layer, and are partially or mostly absorbed in the semiconductor layer 303.
  • the support 301-1 and/or metal layer 301-2 and/or zinc oxide layer 302 as the transparent layer and/or semiconductor layer 303 are formed with textured surfaces having larger sizes sufficient to tilt the optical path, so that it can be expected that the light absorption becomes larger.
  • the increase in light absorption is extremely small for a layer which is substantially transparent to rays of light; however, for a region capable of absorbing rays of light to some extent, that is, for a region made of a material having an optical absorption edge close to the wavelength of rays of light, the light absorption in the region is exponentially increased.
  • the zinc oxide layer 302 as the transparent layer is transparent to rays of light in a range from visible light to near infrared radiation, rays of light in a wavelength range from 600 nm to 1200 nm are absorbed in the semiconductor layer 303.
  • the metal layer 301-2 is not necessarily used; however, for a material having a low reflectance such as a stainless steel or steel, or a material having a low conductivity such as glass or ceramic, the metal layer 301-2 made of a material having a high reflectance such as gold or aluminum is preferably provided on the support made of the above material having a low reflectance or a low conductivity. Additionally, in the case of using the metal layer 301-2 made of aluminum, an extremely thin transparent conductive layer 301-3 is formed on the metal layer 301-2 in order to prevent aluminum from being dissolved in the aqueous solution.
  • the semiconductor layer may be of a structure of a pn-junction, pin-junction, Schottky-junction, or hetero-junction, and as the semiconductor material, there may be used a hydrogenated amorphous silicon, hydrogenated amorphous silicon-germanium, hydrogenated amorphous silicon- carbide, micro-crystal silicon, or polycrystalline silicon.
  • a material such as Si, C, Ge, or an alloy thereof in the amorphous or micro-crystal form is suitably used to be continuously formed on a web of a substrate.
  • the material contains hydrogen and/or halogen atoms preferably in a range from 0.1 to 40 atomic%.
  • the material may contain an impurity such as oxygen or nitrogen in a concentration of from 5 ⁇ 10 19 cm -3 .
  • the material is doped with a group III element for forming a p-type semiconductor, and is doped with a group V element for forming an n-type semiconductor.
  • an i-type semiconductor layer of a pin junction disposed near the light incident side has a wide band gap
  • an i-type layer of a pin junction disposed more apart from the light incident side has a narrower bad gap.
  • the minimum value of the band gap is located at a position shifted to the p-layer from the center of the film thickness.
  • the doped layer on the light incident side may be formed of a crystalline semiconductor less in light absorption or a semiconductor wide in band gap.
  • the above semiconductor layer may be formed by a microwave (MW) plasma CVD process or a radio frequency (RF) plasma CVD process.
  • the semiconductor layer is formed in the following procedure (if necessary, see the drawings of the known film formation apparatus associated with the procedure described below).
  • the conditions can be, for example, set as follows: namely, the substrate temperature in the deposition chamber is preferably in a range 100 to 450°C; the inner pressure of the deposition chamber is preferably in a range from 0.5 to 30 mTorr; the microwave power is preferably in a range from 0.01 to 1 W/cm 3 ; the frequency of the microwave is preferably in a range from 0.1 to 10 GHz; and the deposition rate is preferably in a range from 0.05 to 20 nm/sec.
  • the conditions can be, for example, set as follows: namely, the frequency of the RF power is preferably in a range from 0.1 to 100 MHz; the substrate temperature in the deposition chamber is preferably in a range from 100 to 350°C; the inner pressure of the deposition chamber is preferably in a range from 0.1 to 10 Torr; the RF power is preferably in a range from 0.001 to 0.5 W/cm 3 ; and the deposition rate is preferably in a range from 0.01 to 3 nm/sec.
  • the source gases usable for deposition of a group IV element amorphous semiconductor layer and a group IV compound based amorphous semiconductor layer suitable for a photoelectric conversion device of the present invention may include a gaseous compound containing silicon atoms, such as SiH 4 or Si 2 H 6 , and a gaseous compound containing germanium atoms, such as GeH 4 .
  • the above source gas may be used in combination with a gaseous compound containing carbon, nitrogen or oxygen.
  • a gas such as B 2 H 6 or BF 3 is used as a dopant gas for forming a p-type layer, and a gas such as PH 3 or PF 3 is used as a dopant gas for forming an n-type layer.
  • a micro-crystal semiconductor layer a polycrystalline semiconductor layer, or a layer less in light absorption or wide in band gap such as SiC
  • the dilution ratio of the source gas by hydrogen gas is increased and the increased microwave power or RF power is introduced.
  • the transparent electrode 107 can serves as a reflection preventive film by suitably setting the film thickness thereof.
  • the transparent electrode 107 is formed of a compound such as ITO, ZnO or In 2 O 3 by deposition, CVD, spraying, spin-on coating, or immersion coating.
  • a compound such as ITO, ZnO or In 2 O 3 by deposition, CVD, spraying, spin-on coating, or immersion coating.
  • Such a compound may contain a material capable of changing conductivity.
  • a collecting electrode 108 is provided for improving a collecting efficiency. It is formed by a manner of forming a metal in accordance with an electrode pattern by sputtering; printing a conductive paste or solder paste; or fixing a metal wire with a conductive paste.
  • protective layers may be formed on both sides of the photoelectric conversion device 100 as needed.
  • a reinforcing member such as a steel sheet may be used in combination.
  • Zinc oxide films were prepared using the same apparatus as that shown in FIG. 1, except that the solution circulating system was omitted.
  • the cathode 103 there was used a substrate formed of a 0.12 mm thick stainless steel sheet 430BA deposited with a 2,000 ⁇ thick copper film.
  • the back surface of the substrate was covered with a tape.
  • the anode 104 there was used a 1 mm thick zinc sheet (4-N).
  • the electrolytic solution there was used an aqueous solution of zinc nitrate, which was added with sucrose in an amount of 2 g per 100 ml.
  • the concentration of zinc nitrate was varied in a range from 0.1 M/l to 0.0025 M/l.
  • the temperature of the aqueous solution was varied in a range from room temperature to 85°C, and the applied current was varied in a range from 0.3 to 100 mA/cm 2 (0.03 to 10 A/dm 2 ).
  • the aqueous solution was constantly stirred by a magnetic stirrer.
  • the film formation was conducted in the condition in which the applied current density was set at a constant value, about 1 mA/cm 2 ; the concentration of zinc nitrate in the solution was changed at four stages of 0.1 M/l, 0.025 M/l, 0.01 M/l, and 0.0025 M/l; and the solution temperature was changed in a range from room temperature to 85°C.
  • the liquid temperature was 60°C or more
  • each of the deposited film was identified as hexagonal zinc oxide by an X-ray diffractometer, and was observed in particle size of crystal grains by SEM. The results of the observation by SEM are shown in FIG. 4.
  • the film formation was conducted in the condition in which the solution temperature was set at a constant value, 65°C; the concentration of zinc nitrate of the solution was changed at three stages of 0.1 M/l, 0.025 M/l, and 0.01 M/l; and the applied current density was varied in a range from about 0.5 mA/cm 2 to about 100 mA/cm 2 .
  • the applied current density dependence on the deposition rate is shown in FIG. 5. At any concentration of zinc nitrate, the deposition rate increases substantially linearly when the applied current density is less than about 5 mA/cm 2 . When the applied current density exceeds 5 mA/cm 2 , the deposition rate becomes sub-linear, and abnormal growth is observed by SEM.
  • the crystal grains are so grown that the c-axes are oblique to the substrate; and for the film prepared at the concentration of zinc nitrate of 0.025 M/l or 0.01 M/l, the crystal grains are grown in a manner that the c-axes are perpendicular to the substrate.
  • FIG. 6 shows the X-ray diffraction pattern of the sample which is prepared at the concentration of zinc nitrate of 0.1 M/l and has crystal grains so grown that the c-axes are oblique to the substrate
  • FIG. 7 shows the X-ray diffraction of the sample which is prepared at the concentration of zinc nitrate of 0.025 M/l and has crystal grains so grown that the c-axes are perpendicular to the substrate.
  • the influence of the substrate is corrected.
  • SEM there is a clear difference between the above two samples. That is, in the sample having the X-ray diffraction pattern shown in FIG.
  • a deposition rate is estimated based on the density of zinc oxide by calculation.
  • the calculated results are shown by the broken lines in FIG. 3.
  • monovalent ions are sufficiently related to the deposition reaction, that is, dominate the deposition reaction in an erroneous range. Accordingly, it is estimated that the important factor for the growth of zinc oxide from the solution is Zn(NO 3 ) + .
  • the deposition of zinc oxide preferably proceeds at a temperature higher than about 50°C; the size of crystal grains of zinc oxide is dependent on the concentration and the temperature of the solution; the deposition rate is dependent on the current density of the applied current; the orientation of crystal grains is dependent on the concentration of the solution; and the factor dominant for the orientation may be Zn(NO 3 ) + .
  • a zinc oxide film having specified crystal grains can be formed in a specified orientation (with the c-axes oriented perpendicularly or obliquely to the substrate) by suitably selecting the concentration and the temperature of the solution containing zinc nitrate and sucrose.
  • a 3,000 ⁇ thick zinc oxide film was deposited from an electrolytic solution on a substrate formed of a 5 cm ⁇ 5 cm sized stainless steel sheet (430BA). That is, the film formation was conducted by preparing an aqueous solution containing zinc nitrate in the concentration of 0.1 M/l and 20 g/l of sucrose; immersing a zinc plate (purity: 99.99%) as a positive electrode and the stainless steel substrate as a cathode, spaced at a distance of 3. 5 cm, in the solution kept at 70°C; and applying a current of 20 mA using a galvanostat between both the electrodes while stirring the solution.
  • Example 2-1 The procedures of Example 2-1 were repeated, except that the aqueous solution in Example 2-1 was diluted 40 times with pure water and the solution temperature was kept at 85°C, to thereby obtain a 3,000 ⁇ thick zinc oxide film exhibiting a transparent interference color. In addition, the pH of the solution was 6.4. The film thus obtained is taken as a film "b".
  • a zinc oxide film was deposited on the same stainless steel substrate as in Example 2-1 by DC magnetron sputtering. That is, a target of zinc oxide was sputtered for 5 min at a pressure of 10 mTorr and at a DC power of 100 W while allowing Ar gas to flow at a flow rate of 2 sccm, to thereby obtain a 3,000 ⁇ thick zinc oxide transparent film exhibiting an interference color similar to that in Example 2-2. Such a film is taken as a film "c".
  • Example 2-2 An about 1,000 ⁇ thick zinc oxide transparent layer exhibiting an interference color was deposited in same procedure as in Example 2-2, except that the deposition time was set at 3 min. After that, an about 2,000 ⁇ thick zinc oxide layer was stacked on the previous zinc oxide layer by electrolysis in the same procedure as that in Example 2-1, except that the stainless steel substrate deposited with the about 1,000 ⁇ thick zinc oxide layer was used as an electrode and the deposition time was set at 7 min. Such a double-layered film is taken as a film "e".
  • the film "a” exhibited an extremely excellent scattering characteristic in which the interference pattern becomes very broad in a near infrared region despite of the thin thickness of the film.
  • each of the films “a” and “e” has a structure of petal-like polycrystals each having a diameter of about 1.2 ⁇ m; the film “b” has a structure of tile-like polycrystals each having a diameter of about 0.1 ⁇ m, and each of the films “c” and “d” has a shape being so smaller as not to be observed by SEM because of insufficient resolution therefor and thereby not to be evaluated in orientation but is recognized to be of an aggregate structure of granular grains each having a particle size of several hundred ⁇ .
  • the films “a” to “c” were evaluated by X-ray diffraction.
  • the film “a” is found to be of hexagonal crystal structure whose c-axes are oblique to the substrate.
  • the intensity of X-ray diffraction of ⁇ 002> was about 30% of the intensity of ⁇ 101>.
  • the diffraction peak of ⁇ 002> was dominant.
  • the diffraction pattern of the film "b” is found to be of crystal structure having the c-axes oriented perpendicularly to the substrate.
  • the Jsc was 10.2 mA for the film "a”; 9.5 mA for the film “b”; 8.6 mA for the film “c”; 9.3 for the film “d”; and 10.0 mA for the film "e”.
  • the films “a” to “e” were examined in terms of peeling characteristic, wherein each film was bent together with the substrate.
  • the film “a” was started to be peeled at the bending position, and was almost peeled off when being bent back.
  • each of the films “b”, “c", “d” and “e” was not observed in peeling even when bent at an angle of 180°, which gave the result that the film was excellent in adhesion property.
  • a solar cell having a structure of a support (SUS430, 15 ⁇ 15 cm 2 in size, 0.2 mm in thickness)/a metal layer (Ag)/transparent conductive layer (ZnO)/a semiconductor layer/a transparent conductive layer (ITO)/a collecting electrode (Cr), wherein the semiconductor layer was of a structure of three pin junctions.
  • a metal layer (Ag) was first formed on a support by sputtering, to prepare a conductive substrate.
  • a conductive substrate On the conductive substrate previously heated by immersion in a hot water tank (see FIG. 1) filled with hot water kept at 85°C, there was formed a 2.0 ⁇ m thick transparent conductive layer (ZnO) using an aqueous solution containing nitrate ions, zinc ions, and glucose in respective amounts shown in Table 1.
  • ITO transparent conductive layer
  • ITO transparent conductor layer
  • Example 3 and Comparative Example 1 were measured in solar cell characteristic under a solar cell simulator (AM 1.5, 100 mW/cm 2 , surface temperature 25°C). At the same time, these solar cells were measured in shunt resistance (Rsh) for examining the degree of leak current.
  • Rsh shunt resistance
  • a solar cell having a quality over a criterion set in terms of practical usability was regarded as acceptable, and the degree of abnormal growth of a zinc oxide thin film was evaluated from the acceptable ratio.
  • the sub cells regarded as acceptable were examined in solar cell characteristics (photoelectric conversion efficiency), and the zinc oxide thin film was evaluated in uniformity by examining the variations, that is, the standard deviation in the photoelectric conversion efficiency of the sub cells.
  • the solar cell after being subjected to a HH test was evaluated in adhesion property using a cross-cut adhesion test.
  • the HH test was conducted by a manner of putting each solar cell in an environmental test box, and holding it therein for 100 hr at a temperature of 85°C and at a humidity of 85%.
  • the cross-cut adhesion test was conducted by a manner of forming cutting lines having a depth reaching the support in a lattice patten (interval: 1 mm) in the solar cell taken off from the environmental test box using a cutter knife; sticking an adhesive tape on the cutting lines formed in the lattice pattern, following by removal of the tape, and visually observing the sticking state of the tape.
  • Example 3 As a result, it was found that the solar cell in Example 3 was superior to that in Comparative Example 1 in terms of acceptable ratio, standard deviation of photoelectric conversion efficiency in acceptable sub cells, and adhesion property by the cross-cut adhesion test.
  • the standard deviation in photoelectric conversion efficiency for acceptable sub cells in Example 3 was as small as being one-fifth of that in Comparative Example 1.
  • a solar cell was prepared by repeating the procedures of Example 3, except that glucose used in Example 3 was replaced with sucrose.
  • the film formation conditions were shown in Table 3.
  • Example 4 As a result, it was found that the solar cell in Example 4 was superior to that in Comparative Example 1 in terms of acceptable ratio, standard deviation in photoelectric conversion efficiency of acceptable sub cells, and adhesion property performed by the cross-cut adhesion test. In particular, the acceptable ratio was found to reach 100%.
  • a solar cell was prepared by repeating the procedures of Example 3, except that glucose used in Example 3 was replaced with dextrin.
  • the film formation conditions are shown in Table 4.
  • the solar cell in Example 5 was superior to that in Comparative Example 1 in terms of acceptable ratio, standard deviation in photoelectric conversion efficiency of acceptable sub cells, and adhesion property performed by the cross-cut adhesion test.
  • the solar cell in this example was excellent in adhesion property by the cross-cut adhesion test.
  • a solar cell was prepared by repeating the procedures of Example 3, except that glucose used in Example 3 was replaced with a mixture of glucose, sucrose and dextrin.
  • the film formation conditions are shown in Table 5.
  • Example 6 As a result, it was found that the solar cell in Example 6 was superior to that in Comparative Example 1 in terms of acceptable ratio, standard deviation in photoelectric conversion efficiency of acceptable sub cells, and adhesion property performed by the cross-cut adhesion test.
  • a solar cell was prepared by repeating the procedure of Example 6, except that the concentration of nitrate ions was set at a value being twice that in Example 6.
  • the film formation conditions are shown in Table 6.
  • Example 7 As a result, it was found that the solar cell in Example 7 was superior to that in Comparative Example 1 in terms of acceptable ratio, standard deviation in photoelectric conversion efficiency of acceptable sub cells, and adhesion property performed by the cross-cut adhesion test.
  • photoelectric conversion devices were prepared in the same procedures as those in Example 3.
  • Example 8 The solar cells in Example 8 were measured in solar cell performance under a solar cell simulator (AM 1.5, 100 mW/cm 2 , surface temperature 25°C ). As a result, it was found that the five samples prepared at the solution temperatures 50°C or more exhibited photoelectric conversion efficiencies nearly equal to each other; however, the sample prepared at the solution temperature of 40°C exhibited a photoelectric conversion efficiency being lower 10% than that of the samples prepared at the solution temperatures 50°C or more.
  • a high quality photoelectric conversion device can be produced by setting the temperature of the solution containing nitrate ions, zinc ions, and a carbohydrate in a range of 50°C or more.
  • photoelectric conversion devices were prepared in the same procedure as those in Example 3.
  • Example 9 The solar cells in Example 9 were measured in solar cell performance under a solar cell simulator (AM 1.5, 100 mW/cm 2 , surface temperature 25°C). As a result, it was found that the four samples prepared at the current densities in a range from 10 mA/dm 2 to 10A/dm 2 exhibited photoelectric conversion efficiencies nearly equal to each other; however, the samples prepared at the current densities of 5 mA/dm 2 and 20 A/dm 2 exhibited photoelectric conversion efficiencies being 5% lower than those of the samples prepared at the current densities in a range from 10 mA/dm 2 to 10A/dm 2 .
  • a high quality photoelectric conversion device can be prepared by setting the applied current densities in a range of from 10 mA/dm 2 to 10 A/dm 2 .
  • a first zinc oxide layer was prepared in the same manner as in Example 6, except that the concentration of zinc ions in Example 6 was decreased to be half and the applied current density in Example 6 was increased to be twice (see Table 9); and then a second zinc oxide layer was prepared in the same manner as in Example 6, except that the concentration of zinc ions in Example 6 was decreased to be half and the applied current density in Example 6 was increased to be one-tenth (see Table 10).
  • a photoelectric conversion device was prepared by repeating the procedures of Example 3.
  • Example 10 As a result, it was found that the solar cell in Example 10 was superior to that in Comparative Example 1 in terms of acceptable ratio, standard deviation in photoelectric conversion efficiency of acceptable sub cells, and adhesion property performed by the cross-cut adhesion test.
  • solar cells each having the configuration of FIG. 3 were prepared on a long belt-shaped support (web).
  • a semiconductor layer there was used a type having three pin junctions like Example 3.
  • the film formation was conducted using a Roll-to-Roll process with a high productivity.
  • each solar cell similar to that in Example 3 was prepared by a Roll-to Roll apparatus.
  • each of the solar cells in Example 9 was superior to that in Comparative Example 1 in terms of acceptable ratio, standard deviation in photoelectric conversion efficiency of acceptable sub cells, and adhesion property performed by the cross-cut adhesion test.
  • the solar cell in this example was excellent in adhesion property performed by the cross-cut adhesion test
  • the first zinc oxide layer was found to be composed of crystal grains each having a diameter of about 0.05 ⁇ m and being oriented with the c-axes perpendicularly to the substrate; and the second zinc oxide layer was found to be composed of crystal grains each having a diameter of about 0.3 ⁇ m and being oriented with the ⁇ 101> directions perpendicularly to the substrate.
  • a-Si n-type semiconductor layer
  • a-Si 2,000 ⁇ i-type semiconductor layer
  • ⁇ c-Si 140 ⁇ thick p-type semiconductor layer
  • the device As a result of measuring the short-circuit current density (Jsc) of the device under a solar simulator, the device was found to exhibit the Jsc of 11.0 mA.
  • Example 12-1 The procedures of Example 12-1 were repeated, except that the first and second zinc oxide layers were formed in the conditions shown in Table 14 and 15.
  • the first and second zinc oxide layers were subjected to SEM observation and X-ray diffraction.
  • the first zinc oxide layer was found to be composed of crystal grains each having a diameter of about 0.05 ⁇ m and being oriented with the c-axes perpendicularly to the substrate; and the second zinc oxide layer was found to be composed of crystal grains each having a diameter of about 1.3 ⁇ m and being oriented with the c-axes obliquely to the substrate.
  • the device As a result of measuring the short-circuit current density (Jsc) of the device under a solar simulator, the device was found to exhibit the Jsc of 11.5 mA.
  • a photoelectric conversion device was prepared in the same manner as in Example 12-1, except that the zinc oxide layer was not formed. As a result of measuring the Jsc of the device in false sunlight, the device was found to exhibit the Jsc of 7.3 mA. Accordingly, it becomes apparent that the devices prepared in Examples 12-1, 12-2 have excellent characteristics as compared with the device prepared in Comparative Example 2.
  • Jsc short-circuit current density
  • Example 14 The procedures of Example 14 were repeated, except that the zinc oxide layer was not formed. As a result of measuring the short-circuit current density (Jsc) of the device in false sunlight, the device was found to exhibit the Jsc of 8.3 mA.
  • Example 13 has excellent characteristics as compared with the device prepared in Comparative Example 3.
  • a rolled support web 803 coated with oil for rust prevention was immersed in a degreasing tank 806 for degreasing the oil.
  • the degreasing tank 806 was filled with an aqueous solution containing 60 of sulfuric acid and 70 ml of hydrochloric acid (containing 37% of hydrogen chloride; this is to be repeated in the following) in 1 l of water.
  • the solution temperature was set at room temperature.
  • the rolled support web 803 was carried in a rinse tank 810 via a carrier roller 807.
  • the rolled support web 803 was sufficiently rinsed by means of rinsing shower nozzles 808 and 811.
  • the water amount is preferably 2 l/min or more.
  • the rolled support web 803 was carried in an acid etching bath 815 via a carrier roll 812.
  • the rolled support web 803 was etched by fluoric acid and nitric acid.
  • An acid etching solution 814 ia a mixture of 5 parts by weight of nitric acid, 3 parts by weight of fluoric acid (containing 46% of hydrogen fluoride; this is to be repeated in the following) and 1 part by weight of acetic acid.
  • the solution temperature was set at room temperature.
  • the etching is effective to increase the adhesion property of a metal layer (which will be formed later) to the support.
  • the texture formed by the etching plays an effective role in the texture formation of a zinc oxide thin film (which will be formed later), thereby contributing to the formation of a photoelectric conversion device having an effective light confining effect.
  • the rolled support web 803 was carried into a rinse tank 819 similar to that provided after the degreasing tank.
  • a rinse tank 819 similar to that provided after the degreasing tank.
  • an alkali solution may be showered in consideration of the subsequent step of forming a metal layer in an alkali solution.
  • the rolled support web 803 was carried into a metal layer forming tank 826 via carrier rollers 821 and 822, and a metal layer was formed on the rolled support web 803 in the metal layer forming tank 826.
  • a metal layer forming solution 825 was a solution containing in 1 l of water, 80 g of copper pyrophosphate, 300 g of potassium pyrophosphate, 6 ml of ammonia (specific gravity: 0.88), and 10 g of potassium nitrate.
  • the solution temperature was controlled in a range from 50 to 60°C.
  • the pH was set in a range from 8.2 to 8.8.
  • a copper plate was used as an anode 824.
  • the current flow in the anode is used for controlling the formation of the layer.
  • the current density was set at 3 A/dm 2 .
  • the layer forming rate was set at 60 ⁇ /s, and the thickness of the metal layer 802 formed in the metal layer forming solution was 4,000 ⁇ .
  • a first zinc oxide layer forming solution 839 is a solution containing in 1 l of water, 1 g of a hydrated zinc nitrate [(ZnNO 3 ) 2 ⁇ 6H 2 O] and 20 g of sucrose.
  • the solution temperature was kept at 85°C, and the pH was kept in a range from 5.9 to 6.4.
  • a zinc plate having a surface polished by a buff was used as a counter electrode 838.
  • a current density of a current flow in the zinc counter electrode 838 was set at 2 A/dm 2 .
  • the layer formation rate was set at 100 ⁇ /s, and the thickness of the first zinc oxide layer 103 was 1 ⁇ m.
  • a second zinc oxide layer forming solution 853 is a solution containing in 1 l of water, 30 g of a hydrated zinc nitrate [(ZnNO 3 ) 2 ⁇ 6H 2 O] and 20 g of sucrose.
  • the solution temperature was kept at 75°C, and the pH was kept in a range from 5.2 to 5.8.
  • a zinc plate having a surface polished by a buff was used as a counter electrode 852.
  • a current density of a current flow in the zinc counter electrode 852 was set at 2 A/dm 2 .
  • the layer formation rate was set at 100 ⁇ /s, and the thickness of the second zinc oxide layer 104 was 1 ⁇ m.
  • the rolled support web 803 was carried into a rinse tank 861, to be rinsed.
  • the rolled support web 803 was carried into a drying furnace 864 via a carrier roller 863.
  • the drying furnace 864 includes hot air nozzles 865 and infrared radiation heaters 866.
  • the hot air also has a water repellent effect.
  • the hot air from the hot air nozzles 865 was controlled at 150°C, and the infrared heaters 866 were controlled at 200°C.
  • the rolled support web 803 was finally wound around a take-up roller 802.
  • the process speed of the rolled support web was set at 20 cm/min.
  • a tension applied to the rolled support web was set at 10 kg.
  • the tension was controlled by a tension adjusting clutch (not shown) incorporated in the take-up roller 802.
  • the metal layer forming tank 826 solution was bubbled by compressed air, and each of the first zinc oxide layer forming tank 840 and the second zinc oxide layer forming tank 854 solution was mechanically stirred.
  • the pH of the solution was usually monitored by means of a pH meter containing a temperature calibration mechanism using a glass electrode, and was controlled by addition of ammonia for the metal layer forming tank 826 and by addition of zinc nitrate for each of the first and second zinc oxide layer forming tanks 840 and 854.
  • the content of copper pyrophosphate may be changed in a range from 60 to 110 g; the content of potassium pyrophosphate may be changed in a range from 10 to 500 g; the content of aqueous ammonia may be changed in a range from 1 to 10 ml; and the content of potassium nitrate may be changed in a range from 5 to 20 g.
  • potassium pyrophosphate contributes to texture of the formed copper film, and if the content is excessively larger, the texture is suppressed and also the current density is reduced because of generation of orthophosphate.
  • the contents of potassium phosphate and aqueous ammonia are smaller, the texture tends to be enlarged.
  • the aqueous solution containing in 1 l of water, 1 g of hydrated zinc nitrate [(ZnNO 3 ) 2 ⁇ 6H 2 O], and 20 g of sucrose was selected as the first zinc oxide layer forming solution
  • the content of hydrated zinc nitrate may be changed in a range from 0.1 to 80 g and the content of sucrose may be changed in a range from 3 to 100 g.
  • the above solution may be added with 50 ml or less of nitrate, and further added with 3-20 ml of acetic acid for enhancing the management of the pH.
  • the aqueous containing in 1 l of water, 30 g of hydrated zinc nitrate [(ZnNO 3 ) 2 ⁇ 6H 2 O], and 20 g of sucrose was selected as the second zinc oxide layer forming solutio 853
  • the content of hydrated zinc nitrate may be changed in a range from 1 to 80 g and the content of sucrose may be changed in a range of from 3 to 100 g.
  • the above solution may be added with 50 ml or less of nitrate, and further added with 3-20 ml of acetic acid for enhancing the management of the pH.
  • Example 14 The procedures of Example 14 were repeated, except that the copper layer and the zinc oxide layer were deposited on the stainless steel substrate by sputtering, to thereby prepare photoelectric conversion devices.
  • the device in Example 14 exhibited a photoelectric conversion efficiency being 1.4 times as high as that of the device in Comparative Example 4.
  • the excellent photoelectric conversion efficiency of the device according to the present invention is mainly dependent on the improvement in short-circuit current, more concretely, dependent on the fact that the orientation of crystals of the zinc oxide polycrystalline film in which crystals are grown with c-axes oriented obliquely to the substrate exerts an extremely desirable effect on the light confining function of the photoelectric conversion device.
  • each device was subjected to the endurance test by putting the device in an environmental test box in the condition of 85°C-85 RH while applying a reverse bias of 1 V, and monitoring the change in performance with time.
  • the device in Comparative Example 4 was close to the unusable shunt level after 10 min. after an elapse and eventually reached a unusable state 1 hour after the elapse; however, the device in Example 14 remained in the usable region for 16 hr. This shows that the device of the present invention exhibits an excellent characteristic.
  • the rinsing temperatures and the solution temperatures throughout the production steps conducted by the apparatus shown in FIG. 8 were kept at about 75°C.
  • a mixture of nitric acid, fluoric acid and acetic acid in the mixing ratio of 3:2:3 was used as the etching solution; the same solution as that in Example 14 was used as the metal layer forming solution; a solution containing in 1 l of water, 3 g of hydrated zinc nitrate [(ZnNO 3 ) 2 ⁇ 6H 2 O], 2 ml of nitric acid, 1 ml of acetic acid, and 90 g of sucrose was used as the first zinc oxide layer forming solution 839; and a solution containing in 1 l of water, 30 g of hydrated zinc nitrate [(ZnNO 3 ) 2 ⁇ 6H 2 O], 2 ml of nitric acid, 1 ml of acetic acid, and 90 g of sucrose was used as the second zinc oxide layer forming solution 853.
  • the layer forming rate was 30 ⁇ /s and the layer thickness was 2,000 ⁇ for the metal layer 202; the layer forming rate was 10 ⁇ /s and the layer thickness was 2,000 ⁇ for the first zinc oxide forming layer 103; and the layer forming rate was 10 ⁇ /s and the layer thickness was 12,000 ⁇ for the second zinc oxide forming layer 104.
  • each photoelectric conversion device was prepared in the same procedures as in Example 14.
  • Example 15 The procedures of Example 15 were repeated, except that the copper layer and the zinc oxide film were deposited on the stainless steel substrate by sputtering, to thereby prepare photoelectric conversion devices.
  • the device in Example 15 exhibited a photoelectric conversion efficiency being 1.17 times that of the device in Comparative Example 5.
  • the device prepared in this example was subjected to the endurance test by putting the device in an environment testing box in the condition of 85°C-85 RH while applying a reverse bias of 1 V, and monitoring the change in performance with time. As a result that, it was found that the device stably remained in the usable region for 17 hr. This shows that the device of the present invention exhibits an excellent characteristic.

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Claims (31)

  1. Procédé pour la production d'un film mince d'oxyde de zinc, comprenant l'étape consistant à appliquer un courant entre un substrat conducteur immergé dans une solution aqueuse contenant au moins des ions nitrate, des ions zinc et un glucide, et une électrode immergée dans ladite solution, de manière à former un film d'oxyde de zinc sur ledit substrat conducteur.
  2. Procédé suivant la revendication 1, dans lequel le glucide comprend un monosaccharide, un disaccharide ou un polysaccharide.
  3. Procédé suivant la revendication 1 ou 2, dans lequel la solution aqueuse comprend un mélange de deux ou plus de deux glucides.
  4. Procédé suivant la revendication 1, 2 ou 3, dans lequel la concentration du glucide dans la solution aqueuse est comprise dans l'intervalle de 0,001 mole/l à 1,0 mole/l.
  5. Procédé suivant l'une quelconque des revendications précédentes, dans lequel le substrat conducteur est constitué d'acier inoxydable, d'acier, de cuivre, de laiton ou d'aluminium (par exemple d'une plaque de n'importe lequel des métaux précités).
  6. Procédé suivant l'une quelconque des revendications précédentes, dans lequel l'électrode est une électrode en zinc.
  7. Procédé suivant l'une quelconque des revendications précédentes, dans lequel la température de la solution aqueuse est égale ou supérieure à 50°C.
  8. Procédé suivant l'une quelconque des revendications précédentes, dans lequel la densité de courant dudit courant est comprise dans l'intervalle de 10 mA/dm2 à 10 A/dm2.
  9. Procédé suivant l'une quelconque des revendications précédentes, dans lequel le substrat conducteur comprend un support sur lequel est formée une couche métallique.
  10. Procédé suivant l'une quelconque des revendications précédentes, dans lequel la couche métallique est formée par électrodéposition.
  11. Procédé suivant la revendication 9 ou 10, comprenant en outre l'étape d'attaque du support.
  12. Procédé suivant la revendication 9, 10 ou 11, dans lequel le support est constitué de verre, de matières céramiques ou d'une résine.
  13. Procédé suivant l'une quelconque des revendications précédentes, dans lequel le film mince d'oxyde de zinc comprend au moins un premier film mince d'oxyde de zinc et un second film mince d'oxyde de zinc.
  14. Procédé suivant la revendication 13, dans lequel la pluralité de films minces d'oxyde de zinc est formée dans des conditions telle qu'au moins un des paramètres consistant en la concentration de la solution aqueuse, la densité de courant et la température de ladite solution diffère.
  15. Procédé suivant la revendication 13 ou 14, dans lequel le diamètre des grains du premier film mince d'oxyde de zinc est inférieur à celui du second film mince d'oxyde de zinc.
  16. Procédé pour la production d'un film mince d'oxyde de zinc suivant la revendication 13 ou 14, dans lequel le diamètre des grains du premier film mince d'oxyde de zinc est égal ou inférieur à un dizième de celui du second film mince d'oxyde de zinc;
  17. Procédé suivant l'une quelconque des revendications 13 à 16, dans lequel l'orientation du premier film mince d'oxyde de zinc est spécifiée de telle sorte que les axes C des grains cristallins dudit film soient orientés perpendiculairement audit substrat, et l'orientation du second film mince d'oxyde de zinc est spécifiée de telle sorte que les directions (101) des grains cristallins dudit film soient principalement orientées perpendiculairement audit substrat.
  18. Procédé suivant l'une quelconque des revendications 13 à 17, dans lequel le premier film d'oxyde de zinc est formé en appliquant un courant entre le substrat conducteur immergé dans une solution aqueuse contenant du nitrate de zinc à une concentration égale ou inférieure à 0,03 mole/l et un glucide, et l'électrode immergée dans ladite solution.
  19. Procédé suivant l'une quelconque des revendications 13 à 18, dans lequel le second film d'oxyde de zinc est formé en appliquant un courant entre le substrat conducteur formé avec le premier film d'oxyde de zinc, immergé dans une solution contenant du nitrate de zinc à une concentration égale ou supérieure à 0,1 mole/l et un glucide, et ladite électrode immergée dans ladite solution.
  20. Procédé suivant l'une quelconque des revendications 13 à 19, dans lequel la température de la solution pour la formation du premier film mince d'oxyde de zinc est égale à la température de la solution pour la formation du second film mince d'oxyde de zinc.
  21. Procédé suivant l'une quelconque des revendications précédentes, dans lequel le substrat conducteur est chauffé avant la formation du film mince d'oxyde de zinc.
  22. Procédé suivant l'une quelconque des revendications précédentes, dans lequel le substrat conducteur est un substrat en forme de courroie.
  23. Procédé suivant l'une quelconque des revendications précédentes, dans lequel la solution contient en outre un acide.
  24. Procédé suivant l'une quelconque des revendications précédentes qui est utilisé pour la production d'un dispositif de conversion photoélectrique.
  25. Procédé suivant la revendication 24, dans lequel la couche semiconductrice est constituée d'un semiconducteur non monocristallin.
  26. Procédé suivant l'une quelconque des revendications 1 à 23, qui est utilisé pour la préparation d'un substrat de dispositif à semiconducteurs.
  27. Dispositif à semiconducteurs ou dispositif de conversion photoélectrique, comprenant un substrat et un film mince d'oxyde de zinc comprenant une première couche d'oxyde de zinc à grains cristallins de petites dimensions et une seconde couche d'oxyde de zinc à grains cristallins de grandes dimensions.
  28. Dispositif suivant la revendication 27, dans lequel la première couche a une surface lisse et la seconde couche a une surface texturée.
  29. Dispositif suivant la revendication 26 ou 27, dans lequel les grains cristallins de la première couche d'oxyde de zinc ont leurs axes C dirigés perpendiculairement au substrat et les grains cristallins de la seconde couche d'oxyde de zinc ont leurs directions (101) perpendiculaires au substrat.
  30. Dispositif à semiconducteurs ou dispositif de conversion photoélectrique comprenant une couche d'oxyde de zinc formée sur un substrat de telle sorte que les axes C des cristaux soient dirigés obliquement ou perpendiculairement au substrat.
  31. Dispositif suivant l'une quelconque des revendications 27 à 30, comprenant en outre une ou plusieurs couches semiconductrices déposées sur la couche de ZnO.
EP97301408A 1996-03-06 1997-03-04 Procédé de production d'un film mince d'oxyde de zinc et procédé de production d'un substrat d'un dispositif semi-conducteur pour la production d'un dispositif de conversion photo-électrique en utilisant ce film Expired - Lifetime EP0794270B1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP4886896 1996-03-06
JP4886896 1996-03-06
JP48868/96 1996-03-06
JP302576/96 1996-11-14
JP08302576 1996-11-14
JP30257696 1996-11-14

Publications (2)

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EP0794270A1 EP0794270A1 (fr) 1997-09-10
EP0794270B1 true EP0794270B1 (fr) 2000-06-14

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US (1) US5804466A (fr)
EP (1) EP0794270B1 (fr)
KR (1) KR100294098B1 (fr)
CN (1) CN1144901C (fr)
DE (1) DE69702277T2 (fr)

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DE69702277D1 (de) 2000-07-20
KR970067954A (ko) 1997-10-13
DE69702277T2 (de) 2001-03-01
CN1168929A (zh) 1997-12-31
KR100294098B1 (ko) 2001-09-17
US5804466A (en) 1998-09-08
EP0794270A1 (fr) 1997-09-10
CN1144901C (zh) 2004-04-07

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