EP0238903B1 - Referenzstromquelle - Google Patents

Referenzstromquelle Download PDF

Info

Publication number
EP0238903B1
EP0238903B1 EP87103064A EP87103064A EP0238903B1 EP 0238903 B1 EP0238903 B1 EP 0238903B1 EP 87103064 A EP87103064 A EP 87103064A EP 87103064 A EP87103064 A EP 87103064A EP 0238903 B1 EP0238903 B1 EP 0238903B1
Authority
EP
European Patent Office
Prior art keywords
transistor
current source
base
resistor
collector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
EP87103064A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP0238903A1 (de
Inventor
Rolf Dr. Boehme
Jürgen Sieber
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Electronic GmbH
Original Assignee
Telefunken Electronic GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Electronic GmbH filed Critical Telefunken Electronic GmbH
Publication of EP0238903A1 publication Critical patent/EP0238903A1/de
Application granted granted Critical
Publication of EP0238903B1 publication Critical patent/EP0238903B1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only

Definitions

  • the invention relates to a reference current source according to the preamble of claim 1.
  • the band gap stabilization attributable to RJ Widlar (IEEE Journal of Solid-State Circuits, Vol. SC-6, No. 1, 1971) relates to voltage stabilization. It achieves parameters similar to those of the Zener diode stabilization that was previously used, manages with smaller supply voltages and can advantageously be implemented within a bipolar semiconductor circuit.
  • the core of the circuit consists of two transistors, the current densities of which are kept in a certain ratio by a circuit-technical trick.
  • the resulting voltage difference between the base emitter diodes is proportional to the absolute temperature. He becomes a resistance supplied, which is arranged at the emitter of the transistor with the lower current density and this results in that the current consumption of the two transistors is proportional to the absolute temperature.
  • the invention is based on the object of specifying a circuit for one or more stable output currents which is suitable for bipolar integration, the current or currents being dependent neither on the temperature nor on the supply voltage, the supply voltage passing through a large range can and should also allow small values of the supply voltage.
  • Fig. 1 shows the known band gap voltage stabilization in principle.
  • Fig. 1a shows the first form of stabilization, which is based on the aforementioned publication by Widlar.
  • the second form comes from Ahmed's US PS, also mentioned, it is more independent of component fluctuations and has a higher internal reinforcement.
  • the current through R1 also becomes proportional to the absolute temperature. Furthermore, the current through R1 is almost the same as current I2 in the circuit of FIG. 1a, and current I1 in the circuit of FIG. 1b. So the voltage drop across the resistors R2, R3 also becomes proportional to the absolute temperature.
  • the compensation effect with regard to the generated voltage Vr is that the voltage drop across R2 which increases with temperature is added to the voltage drop across the emitter base diode of the first transistor Q1 which decreases with temperature.
  • the first resistor R1 can also be inserted between the emitter of the second transistor Q2 and the reference point M, the base and the collector of the first transistor Q1 being connected to one another.
  • the circuit shown in FIG. 1 with differential amplifier OA and resistors R2, R3 relates to the generation of temperature-stable voltages.
  • the design of the amplifier circuit is not important. It is only essential that the ratio of the two currents I1, I2 is maintained regardless of their size and that the voltage difference between the base of transistor Q1 and the collector of transistor Q2 goes to zero.
  • This model concept is called "controlled double current source".
  • FIG. 3 A preferred embodiment of the controlled dual current source is shown in FIG. 3. It consists of a differential amplifier OA1, the input of which is connected to node A, B and two transistors Q3, Q4 with conductivity that is complementary to that of transistors Q1, Q2.
  • the bases of the transistors Q3, Q4 are connected to the output of the differential amplifier OA1.
  • the emitters of the transistors Q3, Q4 are optionally connected to a supply voltage Vs via resistors R6, R7.
  • the collector of transistor Q3 is at node A and the collector of transistor Q4 is at Node B connected. If one can neglect the input currents of the differential amplifier OA1, the collector currents of the transistors Q3, Q4 are identical to the currents I1, I2 shown in FIG. 2.
  • the ratio of the currents I1, I2 is determined by the design of the transistors Q3, Q4.
  • the effect of tolerances and the noise contribution of the transistors Q3, Q4 can be reduced by additionally inserted emitter resistors R6, R7.
  • 3 shows a further transistor Qp, the base of which is also connected to the output of the differential amplifier OA1 and the emitter of which is also connected to the supply voltage Vs, possibly via an emitter resistor Rp. It adds a third output to the controlled double current source, which carries the same or proportional output current Ir and is used in a consumer symbolically represented as load resistor R1.
  • FIG. 4 shows a first embodiment of the differential amplifier OA1 introduced in FIG. 3. It consists of the differential amplifier with transistors Q5, Q6, whose bases are connected to nodes A, B, and whose emitters are connected to the reference point, and a resistor can also be inserted between the emitters and the reference point in order to supply the operating currents influence or reduce a common mode influence.
  • the differential stage works on a current mirror from the transistors Q7 and Q8 which are complementary to the transistors Q5 and Q6 and whose emitters are connected to the supply voltage.
  • the collector of transistor Q6 is connected to the collector and base of transistor Q8 and the base of transistor Q7, and the connection of the collectors of transistors Q5 and Q7 forms the output of differential amplifier OA1.
  • the circuit Fig. 4 also shows the mentioned starting problem when there is no special starting circuit with the transistors Qs1 and Qs2 and the resistors Rs1, Rs2, Rs3. Since the nodes A and B are connected to the reference point via the resistors R4, R5, the base of the transistors Q1, Q2 remains at zero potential even after the supply voltage is switched on and the circuit is de-energized. However, if the resistor R4 is removed, an initial potential can build up at the node A due to residual currents, which leads to a first current in the transistor Q5.
  • This current returns to the node A through the current amplification of the transistor Q3 with multiple values and leads to an avalanche-like increase in the total current until, due to the increasing voltage drop across the resistor R1, the current of the transistor Q2 is throttled, the potential at node B increases, the transistor Q6 is live and prevents the further increase in current via the current mirror Q8, Q7, whereby the circuit has entered the desired operating point. It is therefore crucial for this type of start that the temperature compensation can be carried out on one side with the resistor R5.
  • FIG. 5 A significantly different embodiment of the differential amplifier OA1 is shown in FIG. 5.
  • the potential of nodes A, B is not fed directly to a differential input.
  • the mode of operation here is based on the fact that the same operating point is impressed on the transistor Q6 connected to the node B as the transistor Q1, so that the potentials of the nodes A and B must also be identical to one another.
  • the current source is provided with transistor Q10, the base of which is connected to the base of the other current source transistors Q3, Q4 and the emitter of the same as with the current source transistors connected to the supply voltage Vs.
  • the transistor Q10 determines the current in the transistor Q6 via the connection of the collectors of the transistors Q6, Q10.
  • the downstream amplification transistor Q9 forms the output of the amplifier and controls the interconnected bases of the current source transistors.
  • This configuration requires three transistors for the OA1 amplifier.
  • the transistors Q9 and Q10 form an effective starting circuit of this circuit, so that both compensation resistors R4, R5 may be connected.
  • Fig. 6 shows a configuration in which the current source transistors Qn1 ... Qni are of the same conductivity type as the transistors Q1, Q2 of the inner bandgap cell. It is similar to the circuit of FIG. 5 except for a transistor Q11 connected as a diode, which is connected in parallel with the base-emitter path of the other transistor current sources with a corresponding emitter resistor R10. As a result, the diode transistor draws a current that is the same as or proportionally equal to the other current sources. This current must be supplied from transistor Q9 together with the base currents of the current source transistors. Thus the stabilization effect now extends to the current through transistor Q9. Further transistors Qn1 ... Qni, which are arranged analogously to transistor Q9, serve as stabilized output current sources. For the reasons already mentioned, emitter resistors R9, Rn1 ... Rni inserted in the normal case are expedient.
  • a starting aid which supplies a starting current which is only slightly dependent on the supply voltage Vs is shown in FIG. 4. It consists of two transistors Qs1, Qs2 and three resistors Rs1, Rs2, Rs3.
  • the first transistor Qs1 forms a simple voltage stabilization with the resistors Rs1 and Rs2, in that the first resistor Rs1 is connected between the supply voltage and the base and the second resistor Rs2 is connected between the base and the collector of the transistor Qs1.
  • the resistor Rs2 is relatively small compared to Rs1 and is designed so that the collector voltage of the transistor Qs1 changes as little as possible in the intended range of the supply voltage.
  • the second transistor Qs2 receives this stabilized collector voltage between the base and the emitter, it being possible for a further shear resistor Rs3 to be connected upstream of the emitter.
  • the current developed by transistor Qs2 flows into the bases of current source transistors Q3, Q4.
  • the circuit enters the operating state when the current supplied by transistor Qs2 is so large that the amplified current flowing in transistor Q3 generates a sufficient voltage drop across resistor R4 to make transistor Q5 conductive.
  • FIG. 5 Another method of starting assistance is shown in FIG. 5.
  • a starting transistor Qs is provided, the base of which is connected to the supply voltage Vs via a capacitor Cs, the emitter of which is connected to the reference point and the collector of which is connected to the bases of the current source transistors Q3, Q4.
  • the mode of operation is based on the fact that the charging current surge amplifies the transistor Qs when the supply voltage is switched on is passed to the bases of the current source transistors, which thus open the current flow of the circuit. After the capacitor Cs has been charged, Qs is de-energized.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)
EP87103064A 1986-03-26 1987-03-04 Referenzstromquelle Expired - Lifetime EP0238903B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3610158 1986-03-26
DE19863610158 DE3610158A1 (de) 1986-03-26 1986-03-26 Referenzstromquelle

Publications (2)

Publication Number Publication Date
EP0238903A1 EP0238903A1 (de) 1987-09-30
EP0238903B1 true EP0238903B1 (de) 1991-05-08

Family

ID=6297301

Family Applications (1)

Application Number Title Priority Date Filing Date
EP87103064A Expired - Lifetime EP0238903B1 (de) 1986-03-26 1987-03-04 Referenzstromquelle

Country Status (3)

Country Link
US (1) US4785231A (enrdf_load_stackoverflow)
EP (1) EP0238903B1 (enrdf_load_stackoverflow)
DE (1) DE3610158A1 (enrdf_load_stackoverflow)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1246598B (it) * 1991-04-12 1994-11-24 Sgs Thomson Microelectronics Circuito di riferimento di tensione a band-gap campionato
IT1252324B (it) * 1991-07-18 1995-06-08 Sgs Thomson Microelectronics Circuito integrato regolatore di tensione ad elevata stabilita' e basso consumo di corrente.
GB2262675A (en) * 1991-12-20 1993-06-23 Codex Corp Comparator start-up arrangement
DE4344447B4 (de) * 1993-12-24 2009-04-02 Atmel Germany Gmbh Konstantstromquelle
DE19530737A1 (de) * 1995-08-22 1997-02-27 Philips Patentverwaltung Schaltungsanordnung zum Liefern eines konstanten Stromes
DE19609831A1 (de) * 1996-03-13 1997-09-18 Philips Patentverwaltung Schaltungsanordnung zum Liefern eines Gleichstromes
DE10033933B4 (de) * 2000-07-05 2005-12-01 Samsung SDI Co., Ltd., Suwon Konstantstromquelle zur Bereitstellung kleiner Ströme und Mehrkanalstromquelle
US6433621B1 (en) * 2001-04-09 2002-08-13 National Semiconductor Corporation Bias current source with high power supply rejection
DE10231175B4 (de) * 2002-07-10 2004-08-12 Infineon Technologies Ag Temperaturstabile Stromquellenanordnung
US11714444B2 (en) * 2021-10-18 2023-08-01 Texas Instruments Incorporated Bandgap current reference

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4059793A (en) * 1976-08-16 1977-11-22 Rca Corporation Semiconductor circuits for generating reference potentials with predictable temperature coefficients
US4091321A (en) * 1976-12-08 1978-05-23 Motorola Inc. Low voltage reference
JPS5659321A (en) * 1979-08-09 1981-05-22 Toshiba Corp Constant-current regulated power circuit
US4350904A (en) * 1980-09-22 1982-09-21 Bell Telephone Laboratories, Incorporated Current source with modified temperature coefficient
NL8103813A (nl) * 1981-08-14 1983-03-01 Philips Nv Stroomstabilisatieschakeling.
JPS5866129A (ja) * 1981-10-15 1983-04-20 Toshiba Corp 定電流源回路
US4399399A (en) * 1981-12-21 1983-08-16 Motorola, Inc. Precision current source
US4490670A (en) * 1982-10-25 1984-12-25 Advanced Micro Devices, Inc. Voltage generator
NL8301138A (nl) * 1983-03-31 1984-10-16 Philips Nv Stroombronschakeling.
DE3321556A1 (de) * 1983-06-15 1984-12-20 Telefunken electronic GmbH, 7100 Heilbronn Bandgap-schaltung
NL8302458A (nl) * 1983-07-11 1985-02-01 Philips Nv Stroomstabilisatieschakeling.

Also Published As

Publication number Publication date
EP0238903A1 (de) 1987-09-30
DE3610158A1 (de) 1987-10-01
US4785231A (en) 1988-11-15
DE3610158C2 (enrdf_load_stackoverflow) 1990-01-25

Similar Documents

Publication Publication Date Title
DE2457753C2 (de) Spannungsregelschaltung
DE3328082C2 (de) Spannungsreferenzschaltung
DE2423478C3 (de) Stromquellenschaltung
DE68926201T2 (de) Operationsverstärkerschaltung
DE2412393C3 (de) Stromstabilisierungsschaltung
DE1813326C3 (de) Integrierte Schaltung zum Vorspannen der Basis-Emitter-Strecke eines Transistors durch eine temperaturabhängige Vorspannung
DE2736915C2 (de) Bezugsspannungsgenerator
DE69202208T2 (de) Integrierte Spannungsreglerschaltung mit hoher Stabilität und geringen Leistungsverbrauch-Merkmalen.
DE69411516T2 (de) Bandgap Referenzstromquelle mit Spreizkompensierung des Sättigungstromes von einem Bipolartransistor
DE69000803T2 (de) Stromquelle mit niedrigem temperaturkoeffizient.
DE2749855A1 (de) Spannungsregler
DE68909966T2 (de) Stabilisierte Strom- und Spannungsquellen.
DE2646366C2 (de) Stromstabilisierungsschaltung
DE2508226C3 (de) Stromstabilisierungsschaltung
DE69426104T2 (de) Krümmungskorrekturschaltung für eine Spannungsreferenz
EP0238903B1 (de) Referenzstromquelle
DE68919764T2 (de) Völlig differentielle Referenzspannungsquelle.
DE3003123C2 (enrdf_load_stackoverflow)
DE3335379A1 (de) Monolithisch integrierbare konstantstromquellenschaltung mit niedriger speisespannung
DE69413489T2 (de) Geregelter Spannungsquellengenerator der Bandgapbauart
DE2533421A1 (de) Monolithischer verstaerker
EP0216265B1 (de) Schaltungsanordnung zur Erzeugung einer Referenzspannung mit vorgebbarer Temperaturdrift
DE3006598C2 (de) Spannungsquelle
DE4427052B4 (de) Referenzspannungsgenerator
DE2850487A1 (de) Transistor-verstaerkerkreis

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): FR GB IT

17P Request for examination filed

Effective date: 19871013

17Q First examination report despatched

Effective date: 19890918

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): FR GB IT

ITF It: translation for a ep patent filed
GBT Gb: translation of ep patent filed (gb section 77(6)(a)/1977)
ET Fr: translation filed
PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed
REG Reference to a national code

Ref country code: GB

Ref legal event code: 732E

REG Reference to a national code

Ref country code: FR

Ref legal event code: TP

REG Reference to a national code

Ref country code: GB

Ref legal event code: IF02

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: GB

Payment date: 20030226

Year of fee payment: 17

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: FR

Payment date: 20030314

Year of fee payment: 17

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20040304

GBPC Gb: european patent ceased through non-payment of renewal fee
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20041130

REG Reference to a national code

Ref country code: FR

Ref legal event code: ST

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES;WARNING: LAPSES OF ITALIAN PATENTS WITH EFFECTIVE DATE BEFORE 2007 MAY HAVE OCCURRED AT ANY TIME BEFORE 2007. THE CORRECT EFFECTIVE DATE MAY BE DIFFERENT FROM THE ONE RECORDED.

Effective date: 20050304