EP0076104B1 - Umhüllung für Halbleiteranordnung und Verfahren zu deren Herstellung - Google Patents

Umhüllung für Halbleiteranordnung und Verfahren zu deren Herstellung Download PDF

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Publication number
EP0076104B1
EP0076104B1 EP82305022A EP82305022A EP0076104B1 EP 0076104 B1 EP0076104 B1 EP 0076104B1 EP 82305022 A EP82305022 A EP 82305022A EP 82305022 A EP82305022 A EP 82305022A EP 0076104 B1 EP0076104 B1 EP 0076104B1
Authority
EP
European Patent Office
Prior art keywords
sealing
sealing frame
frame
projecting portion
sealing cap
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP82305022A
Other languages
English (en)
French (fr)
Other versions
EP0076104A3 (en
EP0076104A2 (de
Inventor
Hisashi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of EP0076104A2 publication Critical patent/EP0076104A2/de
Publication of EP0076104A3 publication Critical patent/EP0076104A3/en
Application granted granted Critical
Publication of EP0076104B1 publication Critical patent/EP0076104B1/de
Expired legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49171Fan-out arrangements

Definitions

  • the present invention relates to a method of manufacturing a package for a semiconductor device.
  • a package made of, for example, alumina ceramic is provided.
  • the package comprises a package substrate; a sealing frame mounted to the package substrate; a semiconductor element mounted on the package substrate; and a sealing cap seam welded to the sealing frame the semiconductor element being sealed by the sealing frame and the sealing cap.
  • a good airtight seal is not achieved due to difficulties in seam welding and sealing cap to the sealing frame.
  • US-A-3190952 illustrates the construction of a hermetically sealed container for a transistor or other device in which a cap is welded to the projecting portion of a sealing frame mounted on a package substrate. After welding, extraneous parts of the flanged sealing frame are removed by swinging the flanges about a weakened line adjacent the weld. This can damage the weld region.
  • a method of manufacturing a package for a semiconductor device comprises providing a sealing frame on a package substrate; mounting a semiconductor element on the substrate; and seam welding a sealing cap to the sealing frame to seal the semiconductor element, wherein the sealing frame is provided with a projecting portion on one side and a droop portion on the other side during formation of the frame by blanking or presswork prior to the seam welding step and characterised in that the projecting portion is welded to said sealing cap, which said side of the sealing frame with the droop portion contacts the package substrate.
  • the contact resistance welding can be carried out and so unnecessary heating of portions other than the required welding portion can be avoided.
  • the projecting portion provided on the sealing frame prevents slippage of the sealing cap when the sealing cap is seam welded to the sealing frame.
  • the or each projecting portion comprises a flash or burr produced during manufacture of the one or the sealing cap and the sealing frame of which it forms part.
  • the or each projecting portion forms a line contact with the one of the sealing frame and the sealing cap of which it forms part.
  • the or each projecting portion projects from a surface of the one of the sealing cap and the sealing frame of which it forms part by a distance within the range of 20 to 30 pm.
  • a sealing frame 3 is provided on a surface of a package substrate 1 made of ceramic.
  • a semiconductor element 4 is fixed to the surface of the package substrate 1, and the semiconductor element is electrically connected to an outer lead 2 through lead wire 5 and inner conductive patterns 2'.
  • the sealing frame 3 which is made of, for example, KOVAR, and which is preliminarily fixed to the package substrate 2 by silver soldering, etc is sealed with a sealing cap 7 ( Figure 2) made of, for example, KOVAR, by welding.
  • the process of welding the sealing cap 7 to the sealing frame 3 is a parallel seam welding wherein, as shown in Figure 2, conical electrodes 8, 8' are rolled while contacting both edges of the sealing cap 7. Seam welding is carried out by using heat which is produced by flowing a current between electrodes 8 and 8' at the contact portion of the sealing cap 7 and the sealing frame 3.
  • the sealing frame 3, which is welded with the sealing cap 7, is usually obtained by blanking or presswork.
  • the sealing frame 3 produced by blanking or presswork has droops 11 and flashes 12, the shape of the flash 12 being a characteristic one produced by blanking or presswork.
  • the seam welding is carried out so that the side of the frame 3 having the droop portion 11 is welded to the sealing cap 7.
  • the side to be soldered in the sealing frame 3 might have a gap between the surface of the sealing frame 3 and the package substrate 1 due to the flash 12 produced by blanking or presswork.
  • a problem in the sealing effect between the sealing frame 3 and the package substrate 1 can occur.
  • the sealing frame 3 is provided on the package substrate 1, the sealing frame 3 is provided.
  • the sealing frame 3 is provided by blanking or presswork. Therefore, the sealing frame 3 has flashes projecting for example, 25 11m from the substantially horizontal surface thereof on one side of it and has droop portions 11 on the other side of it, being a usual frame produced by blanking or presswork.
  • the side having droop portions 11 contacts the package substrate while the side having flashes 12 contacts the sealing cap 7.
  • Teh seam welding is carried out by means of the electrodes 8 so that the edge portion of the sealing cap 7 is welded to the flash portion having a curved surface which is produced substantially at the edge of the sealing frame 3, with the result that the contact of the curved surface of the flash portion of the sealing frame 3 with the edge portion of the sealing cap 7 is changed to a line contact from a surface contact in the prior art.
  • the heat value per unit area is increased and it is easy to increase the temperature up to the required temperature for the seam welding.
  • the flash portion 12 is seam welded as shown in Figure 4, the gap produced by the droop portions 11 shown in Figure 3 is not formed in the structure shown in Figure 4. Additionally, since a gap 13, illustrated in Figure 3, cannot be formed between the package substrate 1 and the sealing frame 3 in Figure 4, airtightness between the package substrate 1 and the sealing frame 3 can be improved.
  • the package substrate 1 is made of, for example, alumina ceramic.
  • the projecting portion of the sealing cap 7 may be a flash or a burr produced by presswork.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Claims (6)

1. Verfahren zur Herstellung einer Packung für eine Halbleitervorrichtung, bei weichem Verfahren ein Dichtungsrahmen (3) auf einem Packungssubstrat (1) vorgesehen wird; ein Halbleiterelement (4) auf dem Substrat (1) montiert wird; und ein Verschlußdeckel (7) an den Dichtrahmen (3) angeschweißt wird, um das Halbleiterelement (4) zu versiegeln, wobei der Dichtrahmen (3), während der Bildung des Rahmens durch Schneiden oder Pressen vor dem Nahtschwießungsschritt mit einem vorstehenden Abschnitt (12) auf einer Seite und einen abfallenden Abschnitt (11) auf der anderen Seite versehen wird, dadurch gekennzeichnet, daß der genannte vorstehende Abschnitt (12) an den Verschlußdeckel (7) angeschweißt wird, während die genannte Seite des Dichtrahmens mit dem abfallenden Abschnitt das Packungssubstrat (1) kontaktiert.
2. Verfahren nach Anspruch 1, bei dem der Verschlußdeckel (7) einen vorstehenden Abschnitt hat, der den Dichtrahmen (3) kontaktiert.
3. Verfahren nach Anspruch 1 oder 2, bei dem der oder jeder vorstehende Abschnitt (12) von einer Oberfläche von einem von dem Verschlußdeckel (7) oder dem Dichtrahmen (3), von welchem er einen Teil bildet, um einen Abstand in einem Bereich von 20 bis 30 pm vorsteht.
4. Verfahren nach einem der vorhergehenden Ansprüche, bei dem der oder jeder vorstehende Abschnitt (12) einen Linienkontakt mit einen von dem Dichtrahmen (3) und dem Verschlußdeckel (7) bildet, von welchem er einen Teil bildet.
5. Verfahren nach einem der vorhergehenden Ansprüche, bei dem der oder jeder vorstehende Abschnitt (12) einen Kragen oder Grat hat, der während der Herstellung von einen von dem Verschlußdeckel (7) und dem Dichtrahmen (3), von welchem er einen Teil bildet, erzeugt wurde.
6. Verfahren nach einem der vorhergehenden Ansprüche, bei dem der oder jeder vorstehende Abschnitt (12) sich an einem Randabschnitt von einem vom dem Verschlußdeckel (7) und dem Dichtrahmens (3), and welchem er vorgesehen ist, befindet.
EP82305022A 1981-09-30 1982-09-23 Umhüllung für Halbleiteranordnung und Verfahren zu deren Herstellung Expired EP0076104B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP153892/81 1981-09-30
JP56153892A JPS5856357A (ja) 1981-09-30 1981-09-30 半導体装置用パツケ−ジ

Publications (3)

Publication Number Publication Date
EP0076104A2 EP0076104A2 (de) 1983-04-06
EP0076104A3 EP0076104A3 (en) 1985-04-17
EP0076104B1 true EP0076104B1 (de) 1989-06-28

Family

ID=15572388

Family Applications (1)

Application Number Title Priority Date Filing Date
EP82305022A Expired EP0076104B1 (de) 1981-09-30 1982-09-23 Umhüllung für Halbleiteranordnung und Verfahren zu deren Herstellung

Country Status (5)

Country Link
US (1) US4551745A (de)
EP (1) EP0076104B1 (de)
JP (1) JPS5856357A (de)
DE (1) DE3279791D1 (de)
IE (1) IE54664B1 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133741A (ja) * 1983-12-21 1985-07-16 Fujitsu Ltd 半導体装置及びその製造方法
FR2648275A1 (fr) * 1989-06-09 1990-12-14 Thomson Csf Procede et dispositif d'encapsulation de modules hyperfrequence
JP2763446B2 (ja) * 1992-05-27 1998-06-11 京セラ株式会社 半導体素子収納用パッケージ
JP2734364B2 (ja) * 1993-12-30 1998-03-30 日本電気株式会社 半導体装置
US5866867A (en) * 1997-05-29 1999-02-02 Sawtek Inc. Surface mount package seam welder apparatus and method
CN103056500B (zh) * 2012-11-30 2015-09-02 北京时代民芯科技有限公司 半导体陶瓷外壳封帽的焊接方法
CN103956344B (zh) * 2014-04-01 2017-03-08 中国电子科技集团公司第五十五研究所 一种适合平行封焊工艺的陶瓷管帽及其制造方法
CN114260533A (zh) * 2021-11-30 2022-04-01 中国电子科技集团公司第五十五研究所 一种用于腔体式管帽毫米波模块气密封盖的方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1249532A (en) * 1916-04-14 1917-12-11 William Hall Walker Electric welding.
US3190952A (en) * 1963-02-21 1965-06-22 Bitko Sheldon Welded hermetic seal
JPS5839046B2 (ja) * 1975-05-16 1983-08-27 株式会社クボタ プラスチツクカンセツゾクヨウウケグチノ ケイホウホウ
JPS5326573A (en) * 1976-08-25 1978-03-11 Hitachi Ltd Semiconductor uni t
JPS54155768A (en) * 1978-05-29 1979-12-08 Nec Corp Manufacture of semiconductor device
JPS5748250A (en) * 1980-09-05 1982-03-19 Nec Corp Metal cap for semiconductor device
JPS56128680A (en) * 1980-12-08 1981-10-08 Hitachi Ltd Seam welding device
JPS5839046U (ja) * 1981-09-07 1983-03-14 富士通株式会社 半導体パツケ−ジ
US4461943A (en) * 1982-06-14 1984-07-24 Rwc Inc. Process for forming welded prepainted metal appliance cabinet walls

Also Published As

Publication number Publication date
IE54664B1 (en) 1990-01-03
JPS5856357A (ja) 1983-04-04
EP0076104A3 (en) 1985-04-17
DE3279791D1 (en) 1989-08-03
IE822374L (en) 1983-03-30
EP0076104A2 (de) 1983-04-06
JPH0252425B2 (de) 1990-11-13
US4551745A (en) 1985-11-05

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