EG25410A - Method for the preparation of group I-III-VI quaternary or higher alloy semiconductor films - Google Patents

Method for the preparation of group I-III-VI quaternary or higher alloy semiconductor films

Info

Publication number
EG25410A
EG25410A EGNA2006000140A EG25410A EG 25410 A EG25410 A EG 25410A EG NA2006000140 A EGNA2006000140 A EG NA2006000140A EG 25410 A EG25410 A EG 25410A
Authority
EG
Egypt
Prior art keywords
quaternary
iii
preparation
group
semiconductor films
Prior art date
Application number
Other languages
English (en)
Inventor
Vivian Alberts
Original Assignee
Univ Johannesburg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=34198392&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=EG25410(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Univ Johannesburg filed Critical Univ Johannesburg
Application granted granted Critical
Publication of EG25410A publication Critical patent/EG25410A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
  • Particle Accelerators (AREA)
EGNA2006000140 2003-08-14 2006-02-11 Method for the preparation of group I-III-VI quaternary or higher alloy semiconductor films EG25410A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA200306316 2003-08-14
ZA200402497 2004-03-30
PCT/IB2004/051458 WO2005017978A2 (en) 2003-08-14 2004-08-13 Method for the preparation of group ib-iiia-via quaternary or higher alloy semiconductor films

Publications (1)

Publication Number Publication Date
EG25410A true EG25410A (en) 2012-01-02

Family

ID=34198392

Family Applications (1)

Application Number Title Priority Date Filing Date
EGNA2006000140 EG25410A (en) 2003-08-14 2006-02-11 Method for the preparation of group I-III-VI quaternary or higher alloy semiconductor films

Country Status (20)

Country Link
US (3) US7682939B2 (ko)
EP (3) EP1654751A2 (ko)
JP (2) JP4994032B2 (ko)
KR (2) KR101027318B1 (ko)
AP (2) AP2180A (ko)
AT (1) ATE510304T2 (ko)
AU (2) AU2004301076B2 (ko)
BR (2) BRPI0413572A (ko)
CA (2) CA2539556C (ko)
CY (1) CY1111940T1 (ko)
DE (1) DE202004021800U1 (ko)
DK (1) DK1654769T4 (ko)
EA (2) EA009012B1 (ko)
EG (1) EG25410A (ko)
ES (1) ES2366888T5 (ko)
HK (1) HK1097105A1 (ko)
IL (2) IL173694A0 (ko)
MX (2) MXPA06001723A (ko)
OA (2) OA13236A (ko)
WO (2) WO2005017978A2 (ko)

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US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
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US8859880B2 (en) * 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
TWI411121B (zh) * 2010-03-11 2013-10-01 Ind Tech Res Inst 光吸收層之製造方法及應用其之太陽能電池結構
KR20130016281A (ko) 2010-03-17 2013-02-14 다우 글로벌 테크놀로지스 엘엘씨 타이 층을 포함하는 광전자 활성 칼코겐계 박막 구조물
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
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JP5867392B2 (ja) 2010-08-17 2016-02-24 凸版印刷株式会社 化合物半導体薄膜作製用インクおよび太陽電池の製造方法
JP2012079997A (ja) * 2010-10-05 2012-04-19 Kobe Steel Ltd 化合物半導体薄膜太陽電池用光吸収層の製造方法、およびＩｎ−Ｃｕ合金スパッタリングターゲット
WO2012070481A1 (ja) * 2010-11-22 2012-05-31 京セラ株式会社 光電変換装置
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Also Published As

Publication number Publication date
KR20060058717A (ko) 2006-05-30
MXPA06001723A (es) 2007-04-25
WO2005017978A3 (en) 2005-10-13
EA009012B1 (ru) 2007-10-26
CA2539556A1 (en) 2005-02-24
EP1654751A2 (en) 2006-05-10
US20060222558A1 (en) 2006-10-05
IL173694A0 (en) 2006-07-05
EA200600407A1 (ru) 2006-08-25
US7744705B2 (en) 2010-06-29
HK1097105A1 (en) 2007-06-15
KR101004452B1 (ko) 2010-12-28
OA13236A (en) 2006-12-13
US20070004078A1 (en) 2007-01-04
JP4994032B2 (ja) 2012-08-08
DK1654769T3 (da) 2011-09-12
AU2004301075B2 (en) 2009-10-08
ATE510304T2 (de) 2011-06-15
AP2006003508A0 (en) 2006-02-28
AU2004301076B2 (en) 2009-11-05
BRPI0413567A (pt) 2006-10-17
JP2007502247A (ja) 2007-02-08
JP2007503708A (ja) 2007-02-22
AP2149A (en) 2010-09-01
EP1654769B2 (en) 2018-02-07
KR101027318B1 (ko) 2011-04-06
CA2535703C (en) 2011-04-19
CA2535703A1 (en) 2005-02-24
AU2004301076A1 (en) 2005-02-24
US8735214B2 (en) 2014-05-27
EP2284905A2 (en) 2011-02-16
IL173693A (en) 2014-01-30
WO2005017979A3 (en) 2006-06-01
ES2366888T5 (es) 2018-05-17
MXPA06001726A (es) 2007-05-04
EP1654769B1 (en) 2011-05-18
CA2539556C (en) 2010-10-26
OA13237A (en) 2006-12-13
WO2005017978A2 (en) 2005-02-24
EA010171B1 (ru) 2008-06-30
EP1654769A2 (en) 2006-05-10
AU2004301075A1 (en) 2005-02-24
EA200600406A1 (ru) 2006-08-25
IL173693A0 (en) 2006-07-05
US20100190292A1 (en) 2010-07-29
CY1111940T1 (el) 2015-11-04
US7682939B2 (en) 2010-03-23
KR20060082075A (ko) 2006-07-14
ES2366888T3 (es) 2011-10-26
AP2006003507A0 (en) 2006-02-28
WO2005017979A2 (en) 2005-02-24
DK1654769T4 (en) 2018-05-22
AP2180A (en) 2010-11-29
BRPI0413572A (pt) 2006-10-17
DE202004021800U1 (de) 2011-04-21
JP4864705B2 (ja) 2012-02-01

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