DE69918899T2 - Spalteverstärkerarchitektur in einem aktiven Pixelsensor - Google Patents

Spalteverstärkerarchitektur in einem aktiven Pixelsensor Download PDF

Info

Publication number
DE69918899T2
DE69918899T2 DE69918899T DE69918899T DE69918899T2 DE 69918899 T2 DE69918899 T2 DE 69918899T2 DE 69918899 T DE69918899 T DE 69918899T DE 69918899 T DE69918899 T DE 69918899T DE 69918899 T2 DE69918899 T2 DE 69918899T2
Authority
DE
Germany
Prior art keywords
circuit
input
column
output
signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69918899T
Other languages
German (de)
English (en)
Other versions
DE69918899D1 (de
Inventor
Matthew M. Borg
Charles E. Moore
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aptina Imaging Corp
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Application granted granted Critical
Publication of DE69918899D1 publication Critical patent/DE69918899D1/de
Publication of DE69918899T2 publication Critical patent/DE69918899T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/78—Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69918899T 1998-05-11 1999-05-07 Spalteverstärkerarchitektur in einem aktiven Pixelsensor Expired - Lifetime DE69918899T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US76014 1998-05-11
US09/076,014 US6476864B1 (en) 1998-05-11 1998-05-11 Pixel sensor column amplifier architecture

Publications (2)

Publication Number Publication Date
DE69918899D1 DE69918899D1 (de) 2004-09-02
DE69918899T2 true DE69918899T2 (de) 2005-07-28

Family

ID=22129388

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69918899T Expired - Lifetime DE69918899T2 (de) 1998-05-11 1999-05-07 Spalteverstärkerarchitektur in einem aktiven Pixelsensor

Country Status (7)

Country Link
US (1) US6476864B1 (https=)
EP (1) EP0957630B1 (https=)
JP (1) JP4277356B2 (https=)
CN (1) CN1126114C (https=)
DE (1) DE69918899T2 (https=)
SG (1) SG74113A1 (https=)
TW (1) TW407424B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009019034A1 (de) * 2009-04-27 2010-10-28 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor

Families Citing this family (78)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6207842B1 (en) * 1997-10-09 2001-03-27 Mars Incorporated Process for preparing procyanidin(4-6 or 4-8) oligomers and their derivatives
EP0928101A3 (en) * 1997-12-31 2001-05-02 Texas Instruments Incorporated CMOS area array sensors
WO2000045592A1 (en) * 1999-01-29 2000-08-03 Hamamatsu Photonics K.K. Photodetector device
US6147366A (en) * 1999-02-08 2000-11-14 Intel Corporation On chip CMOS optical element
JP2000287130A (ja) * 1999-03-31 2000-10-13 Sharp Corp 増幅型固体撮像装置
JP3601053B2 (ja) * 1999-04-22 2004-12-15 日本電気株式会社 固体撮像装置
JP3410042B2 (ja) * 1999-04-26 2003-05-26 日本電気株式会社 固体撮像装置およびその駆動方法
US6777663B2 (en) * 1999-05-07 2004-08-17 Intel Corporation Enhanced Photocell with sample and hold amplifier
US6747638B2 (en) * 2000-01-31 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Adhesion type area sensor and display device having adhesion type area sensor
US7068312B2 (en) * 2000-02-10 2006-06-27 Minolta Co., Ltd. Solid-state image-sensing device
US6717564B2 (en) * 2000-03-29 2004-04-06 Koninklijke Philips Electronics N.V. RLCD transconductance sample and hold column buffer
US6873364B1 (en) * 2000-06-08 2005-03-29 Micron Technology, Inc. Low-power signal chain for image sensors
US7030551B2 (en) * 2000-08-10 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
US7012644B1 (en) * 2000-09-06 2006-03-14 Hewlett-Packard Development Company, L.P. Multiple output node charge coupled device
US6747290B2 (en) * 2000-12-12 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Information device
JP3607866B2 (ja) * 2000-12-12 2005-01-05 オリンパス株式会社 撮像装置
DE10108430A1 (de) * 2001-02-22 2002-09-05 Philips Corp Intellectual Pty Strahlungssensor und Strahlungsdetektor für einen Computertomographen
JP3624845B2 (ja) * 2001-03-19 2005-03-02 ソニー株式会社 固体撮像素子
AU2002305780A1 (en) * 2001-05-29 2002-12-09 Transchip, Inc. Patent application cmos imager for cellular applications and methods of using such
US7738013B2 (en) * 2001-05-29 2010-06-15 Samsung Electronics Co., Ltd. Systems and methods for power conservation in a CMOS imager
US6787752B2 (en) 2001-07-19 2004-09-07 Micron Technology, Inc. Pseudorandom assignment between elements of the image processor and the A/D converter cells
US7084912B2 (en) * 2001-09-20 2006-08-01 Yuen-Shung Chieh Method for reducing coherent row-wise and column-wise fixed pattern noise in CMOS image sensors
US7233350B2 (en) 2002-01-05 2007-06-19 Candela Microsystems, Inc. Image sensor with interleaved image output
US6795117B2 (en) * 2001-11-06 2004-09-21 Candela Microsystems, Inc. CMOS image sensor with noise cancellation
US8054357B2 (en) * 2001-11-06 2011-11-08 Candela Microsystems, Inc. Image sensor with time overlapping image output
JP2004015657A (ja) * 2002-06-10 2004-01-15 Fujitsu Ltd 画像データの補正処理装置
US7471324B2 (en) * 2002-08-28 2008-12-30 Aptina Imaging Corporation Amplifier shared between two columns in CMOS sensor
US7375748B2 (en) * 2002-08-29 2008-05-20 Micron Technology, Inc. Differential readout from pixels in CMOS sensor
US6919551B2 (en) * 2002-08-29 2005-07-19 Micron Technology Inc. Differential column readout scheme for CMOS APS pixels
US20040169736A1 (en) * 2003-02-28 2004-09-02 Eastman Kodak Company Imaging method and system for associating images and metadata
EP1475957B1 (en) * 2003-05-08 2010-11-03 STMicroelectronics (Research & Development) Limited Method and apparatus for removing column fixed pattern noise in solid state image sensors
US7456879B2 (en) * 2003-08-29 2008-11-25 Aptina Imaging Corporation Digital correlated double sampling using dual analog path
US20050062866A1 (en) * 2003-09-23 2005-03-24 Ang Lin Ping Multiplexed pixel column architecture for imagers
US20050200730A1 (en) * 2004-03-11 2005-09-15 Beck Jeffery S. Active pixel sensor array sampling system and method
US7388608B2 (en) * 2004-03-11 2008-06-17 Micron Technology, Inc. Sample and hold circuit and active pixel sensor array sampling system utilizing same
KR100994993B1 (ko) * 2004-03-16 2010-11-18 삼성전자주식회사 서브 샘플링된 아날로그 신호를 평균화하여 디지털 변환한영상신호를 출력하는 고체 촬상 소자 및 그 구동 방법
CN100403771C (zh) * 2004-05-11 2008-07-16 凌阳科技股份有限公司 影像传感器及其可偏移补偿的参考电压产生电路
JP2006014316A (ja) * 2004-06-22 2006-01-12 Samsung Electronics Co Ltd サブサンプリングされたアナログ信号を平均化する改善された固体撮像素子及びその駆動方法
US7342256B2 (en) * 2004-07-16 2008-03-11 Semiconductor Energy Laboratory Co., Ltd. Display device mounted with read function and electric appliance
TWI278232B (en) 2004-08-31 2007-04-01 Magnachip Semiconductor Ltd CMOS image sensor
JP2006101479A (ja) * 2004-09-02 2006-04-13 Canon Inc 固体撮像装置及びそれを用いたカメラ
JP4363308B2 (ja) * 2004-11-02 2009-11-11 ソニー株式会社 固体撮像素子の信号処理装置及び方法並びに撮像装置
JP4341528B2 (ja) * 2004-11-02 2009-10-07 ソニー株式会社 固体撮像素子の信号処理装置及び方法並びに撮像装置
JP4854972B2 (ja) * 2005-03-08 2012-01-18 富士フイルム株式会社 信号検出装置
US7282685B2 (en) * 2005-04-14 2007-10-16 Micron Technology, Inc. Multi-point correlated sampling for image sensors
KR100746197B1 (ko) * 2005-12-08 2007-08-06 삼성전자주식회사 공급 전원 및 스위칭 노이즈를 제거할 수 있는 이미지센서의 기준 전압 발생기, 칼럼 아날로그-디지털 변환장치, 이미지 센서, 및 칼럼 아날로그-디지털 변환방법
CN100579451C (zh) * 2006-04-21 2010-01-13 佳能株式会社 成像装置、放射线成像装置和放射线成像系统
US7649559B2 (en) * 2006-08-30 2010-01-19 Aptina Imaging Corporation Amplifier offset cancellation devices, systems, and methods
US20080117317A1 (en) * 2006-11-17 2008-05-22 Ray Alan Mentzer Dim row suppression system and method for active pixel sensor arrays
US7893977B2 (en) * 2007-10-23 2011-02-22 Xerox Corporation Multiplexing and offset correction system for an image sensor array
US7619197B2 (en) * 2008-02-04 2009-11-17 Carestream Health, Inc. Digital radiographic imaging apparatus
JP5142749B2 (ja) * 2008-02-14 2013-02-13 キヤノン株式会社 撮像装置、撮像装置の制御方法及び撮像システム
JP5161676B2 (ja) * 2008-07-07 2013-03-13 キヤノン株式会社 撮像装置及び撮像システム
US8203779B2 (en) * 2009-02-05 2012-06-19 Himax Imaging, Inc. Readout circuit for an image sensor
TWI386050B (zh) * 2009-02-17 2013-02-11 Himax Imaging Inc 影像感測器的讀出電路
JP5257134B2 (ja) * 2009-02-25 2013-08-07 コニカミノルタビジネステクノロジーズ株式会社 固体撮像素子およびそれを備えた撮像装置
EP2254330A1 (en) 2009-05-18 2010-11-24 Thomson Licensing Method and system for operating an image data collection device
TWI496042B (zh) * 2009-07-02 2015-08-11 Semiconductor Energy Lab 觸控面板及其驅動方法
KR20110021426A (ko) * 2009-08-26 2011-03-04 삼성전자주식회사 아날로그-디지털 컨버터, 및 이를 포함하는 이미지 처리 장치
US8462240B2 (en) 2010-09-15 2013-06-11 Aptina Imaging Corporation Imaging systems with column randomizing circuits
US8836835B2 (en) * 2010-10-04 2014-09-16 International Business Machines Corporation Pixel sensor cell with hold node for leakage cancellation and methods of manufacture and design structure
US9052497B2 (en) 2011-03-10 2015-06-09 King Abdulaziz City For Science And Technology Computing imaging data using intensity correlation interferometry
US9099214B2 (en) 2011-04-19 2015-08-04 King Abdulaziz City For Science And Technology Controlling microparticles through a light field having controllable intensity and periodicity of maxima thereof
KR101976228B1 (ko) * 2011-09-22 2019-05-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광 검출 장치 및 광 검출 장치의 구동 방법
US8754799B2 (en) * 2012-01-27 2014-06-17 Analog Devices, Inc. Correlated double-sample differencing within an ADC
JP6183802B2 (ja) 2013-06-04 2017-08-23 ユニバーリンク株式会社 可視光受信方法及びその装置
KR102074944B1 (ko) 2013-06-18 2020-02-07 삼성전자 주식회사 프로그래머블 이득 증폭기와 이를 포함하는 장치들
JP2015100042A (ja) * 2013-11-19 2015-05-28 株式会社東芝 ノイズ除去装置、および撮像装置
CN103873785B (zh) * 2014-03-26 2017-08-11 中国科学院光电技术研究所 一种低噪声电荷耦合器件前端模拟视频信号预处理装置
CN104796640A (zh) * 2015-04-20 2015-07-22 中国航天科技集团公司第九研究院第七七一研究所 超大面阵cmos图像传感器的多功能列时序控制电路
CN104796636B (zh) * 2015-04-20 2017-12-12 中国航天科技集团公司第九研究院第七七一研究所 用于超大面阵拼接cmos图像传感器的复用型像元控制电路
CN109470283B (zh) 2018-11-07 2020-06-05 京东方科技集团股份有限公司 探测电路及其驱动方法、基板、探测器
TWI795803B (zh) * 2021-06-11 2023-03-11 瑞鼎科技股份有限公司 影像感測器
WO2023053904A1 (ja) 2021-10-01 2023-04-06 パナソニックＩｐマネジメント株式会社 撮像装置
US12294802B2 (en) * 2022-07-27 2025-05-06 Omnivision Technologies, Inc. Low power event driven pixels with active difference detection circuitry, and reset control circuits for the same
US11729534B1 (en) * 2022-07-27 2023-08-15 Omnivision Technologies, Inc. Low power event driven pixels with passive difference detection circuitry, and reset control circuits for the same
US11991465B2 (en) 2022-07-27 2024-05-21 Omnivision Technologies, Inc. Low power event driven pixels with passive, differential difference detection circuitry, and reset control circuits for the same
CN117912194B (zh) * 2024-03-20 2024-06-07 吉林大学 基于无线通信网络的有限空间内高危气体监测系统和方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5822900B2 (ja) 1978-09-25 1983-05-12 株式会社日立製作所 固体撮像装置
FR2597648B1 (fr) 1986-04-22 1992-09-11 Thomson Csf Circuit d'echantillonnage et maintien de signal a faible residu d'echantillonnage et utilisation de ce circuit au double echantillonnage correle de signaux
EP0688132B1 (en) * 1989-10-18 2001-06-13 Sony Corporation Video signal processing apparatus
JPH04147498A (ja) 1990-10-09 1992-05-20 Nec Corp サンプルホールド回路
US5248971A (en) 1992-05-19 1993-09-28 Mandl William J Method and apparatus for multiplexed oversampled analog to digital modulation
JP3287056B2 (ja) 1993-03-24 2002-05-27 ソニー株式会社 固体撮像装置
DE4496504T1 (de) * 1993-09-02 1995-10-19 Sony Corp Festkörper-Bildaufnahmevorrichtung
US6166768A (en) * 1994-01-28 2000-12-26 California Institute Of Technology Active pixel sensor array with simple floating gate pixels
US5471515A (en) 1994-01-28 1995-11-28 California Institute Of Technology Active pixel sensor with intra-pixel charge transfer
US5572155A (en) 1994-06-20 1996-11-05 Fuji Photo Film Co., Ltd. CCD signal read-out circuit free from ailiasing of high-frequency noises
US5631704A (en) 1994-10-14 1997-05-20 Lucent Technologies, Inc. Active pixel sensor and imaging system having differential mode
US6018364A (en) * 1996-02-06 2000-01-25 Analog Devices Inc Correlated double sampling method and apparatus
US5721425A (en) 1996-03-01 1998-02-24 National Semiconductor Corporation Active pixel sensor cell that reduces the effect of 1/f noise, increases the voltage range of the cell, and reduces the size of the cell
US5892540A (en) * 1996-06-13 1999-04-06 Rockwell International Corporation Low noise amplifier for passive pixel CMOS imager
US5969758A (en) * 1997-06-02 1999-10-19 Sarnoff Corporation DC offset and gain correction for CMOS image sensor
US5965871A (en) * 1997-11-05 1999-10-12 Pixart Technology, Inc. Column readout multiplexer for CMOS image sensors with multiple readout and fixed pattern noise cancellation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009019034A1 (de) * 2009-04-27 2010-10-28 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Bildsensor
US8344307B2 (en) 2009-04-27 2013-01-01 Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg Image sensor

Also Published As

Publication number Publication date
EP0957630A3 (en) 2001-04-18
SG74113A1 (en) 2000-12-19
EP0957630B1 (en) 2004-07-28
CN1126114C (zh) 2003-10-29
CN1239308A (zh) 1999-12-22
TW407424B (en) 2000-10-01
DE69918899D1 (de) 2004-09-02
JP4277356B2 (ja) 2009-06-10
US6476864B1 (en) 2002-11-05
JPH11355670A (ja) 1999-12-24
EP0957630A2 (en) 1999-11-17

Similar Documents

Publication Publication Date Title
DE69918899T2 (de) Spalteverstärkerarchitektur in einem aktiven Pixelsensor
DE69606147T2 (de) Schaltung, Bildelement, Vorrichtung und Verfahren zur Verminderung des Rauschens örtlich unveränderlicher Muster in Festkörperbildaufnahmevorrichtungen
DE60105393T2 (de) X-Y-Adressen-Festkörperbildaufnehmer
DE69831071T2 (de) Cmos bildsensor mit verbessertem füllfaktor
DE69911932T2 (de) Aktiver linearer sensor
DE69631356T2 (de) Halbleiter-Bildaufnehmer mit gemeinsamer Ausgangsleistung
DE69831072T2 (de) Gleichspannungsoffset- und verstärkungskorrektur für cmos-bildsensoren
DE19857838B4 (de) Aktives CMOS-Pixel mit Speicher für Bilderzeugungssensoren
DE60110672T2 (de) Verstärker-Festkörperbildaufnehmer und schnelles Ausleseverfahren
EP2040458B1 (de) Bildsensor
DE69926098T2 (de) Bidirektionales Schieberegister ohne zwischenstufige Signalabschwächung, geeignet als Steuerschaltung für eine Anzeigevorrichtung und zugehöriges Bildaufnahmegerät
DE10231082A1 (de) Verfahren zum Einstellen eines Signalpegels eines aktiven Bildelements und entsprechendes aktives Bildelement
DE69922730T2 (de) Festkörperbildaufnahmevorrichtung
DE3650666T2 (de) Photoelektrische Wandlervorrichtung
DE112022002176T5 (de) Pixelanordnung, Bildsensor und Verfahren zum Betrieb einer Pixelanordnung
DE602005001415T2 (de) Hybrider, ladungsgekoppelter CMOS-Bildsensor
DE69827034T2 (de) Hochgeschwindigkeitsauslesearchitektur für analogspeicherarrays
DE69728636T2 (de) Photoelektrisches Umwandlungsgerät
DE102019113278A1 (de) Bildsensoren mit ladungsüberlauffähigkeiten
DE60120099T2 (de) Aktiver pixelbildsensor mit verbesserter linearität
DE3501407A1 (de) Servoeinrichtung zur regelung des dunkelstroms in festkoerperbauelementen
DE112023000541T5 (de) Bildsensor, optoelektronische vorrichtung und verfahren zum betreiben einer bildgebenden vorrichtung
DE60127154T2 (de) Verstärkter cmos-wandler für das einzelphotonenauslesen von fotodetektoren
DE102019007238A1 (de) Systeme und verfahren zur spannungsabregelung
DE68925946T2 (de) Festkörperbildmatrix, Vorrichtung und Bildherstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVAGO TECHNOLOGIES GENERAL IP ( SINGAPORE) PTE. LT

8327 Change in the person/name/address of the patent owner

Owner name: MICRON TECHNOLOGY, INC. (N.D.GES.D. STAATES DE, US

8328 Change in the person/name/address of the agent

Representative=s name: PATENT- UND RECHTSANWAELTE BARDEHLE, PAGENBERG, DO

8327 Change in the person/name/address of the patent owner

Owner name: APTINA IMAGING CORP., GRAND CAYMAN, CAYMAN ISL, KY