DE69918899D1 - Spalteverstärkerarchitektur in einem aktiven Pixelsensor - Google Patents

Spalteverstärkerarchitektur in einem aktiven Pixelsensor

Info

Publication number
DE69918899D1
DE69918899D1 DE69918899T DE69918899T DE69918899D1 DE 69918899 D1 DE69918899 D1 DE 69918899D1 DE 69918899 T DE69918899 T DE 69918899T DE 69918899 T DE69918899 T DE 69918899T DE 69918899 D1 DE69918899 D1 DE 69918899D1
Authority
DE
Germany
Prior art keywords
pixel sensor
active pixel
column amplifier
amplifier architecture
architecture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69918899T
Other languages
English (en)
Other versions
DE69918899T2 (de
Inventor
Matthew M Borg
Charles E Moore
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aptina Imaging Corp
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Application granted granted Critical
Publication of DE69918899D1 publication Critical patent/DE69918899D1/de
Publication of DE69918899T2 publication Critical patent/DE69918899T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE69918899T 1998-05-11 1999-05-07 Spalteverstärkerarchitektur in einem aktiven Pixelsensor Expired - Lifetime DE69918899T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US76014 1998-05-11
US09/076,014 US6476864B1 (en) 1998-05-11 1998-05-11 Pixel sensor column amplifier architecture

Publications (2)

Publication Number Publication Date
DE69918899D1 true DE69918899D1 (de) 2004-09-02
DE69918899T2 DE69918899T2 (de) 2005-07-28

Family

ID=22129388

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69918899T Expired - Lifetime DE69918899T2 (de) 1998-05-11 1999-05-07 Spalteverstärkerarchitektur in einem aktiven Pixelsensor

Country Status (7)

Country Link
US (1) US6476864B1 (de)
EP (1) EP0957630B1 (de)
JP (1) JP4277356B2 (de)
CN (1) CN1126114C (de)
DE (1) DE69918899T2 (de)
SG (1) SG74113A1 (de)
TW (1) TW407424B (de)

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JP5142749B2 (ja) * 2008-02-14 2013-02-13 キヤノン株式会社 撮像装置、撮像装置の制御方法及び撮像システム
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JP6183802B2 (ja) * 2013-06-04 2017-08-23 ユニバーリンク株式会社 可視光受信方法及びその装置
KR102074944B1 (ko) 2013-06-18 2020-02-07 삼성전자 주식회사 프로그래머블 이득 증폭기와 이를 포함하는 장치들
JP2015100042A (ja) * 2013-11-19 2015-05-28 株式会社東芝 ノイズ除去装置、および撮像装置
CN103873785B (zh) * 2014-03-26 2017-08-11 中国科学院光电技术研究所 一种低噪声电荷耦合器件前端模拟视频信号预处理装置
CN104796640A (zh) * 2015-04-20 2015-07-22 中国航天科技集团公司第九研究院第七七一研究所 超大面阵cmos图像传感器的多功能列时序控制电路
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Also Published As

Publication number Publication date
EP0957630A2 (de) 1999-11-17
DE69918899T2 (de) 2005-07-28
CN1239308A (zh) 1999-12-22
EP0957630A3 (de) 2001-04-18
JPH11355670A (ja) 1999-12-24
JP4277356B2 (ja) 2009-06-10
US6476864B1 (en) 2002-11-05
EP0957630B1 (de) 2004-07-28
CN1126114C (zh) 2003-10-29
TW407424B (en) 2000-10-01
SG74113A1 (en) 2000-12-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVAGO TECHNOLOGIES GENERAL IP ( SINGAPORE) PTE. LT

8327 Change in the person/name/address of the patent owner

Owner name: MICRON TECHNOLOGY, INC. (N.D.GES.D. STAATES DE, US

8328 Change in the person/name/address of the agent

Representative=s name: PATENT- UND RECHTSANWAELTE BARDEHLE, PAGENBERG, DO

8327 Change in the person/name/address of the patent owner

Owner name: APTINA IMAGING CORP., GRAND CAYMAN, CAYMAN ISL, KY