DE69737705D1 - Aktive Bildelementsensormatrix - Google Patents

Aktive Bildelementsensormatrix

Info

Publication number
DE69737705D1
DE69737705D1 DE69737705T DE69737705T DE69737705D1 DE 69737705 D1 DE69737705 D1 DE 69737705D1 DE 69737705 T DE69737705 T DE 69737705T DE 69737705 T DE69737705 T DE 69737705T DE 69737705 D1 DE69737705 D1 DE 69737705D1
Authority
DE
Germany
Prior art keywords
picture element
sensor matrix
element sensor
active picture
active
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69737705T
Other languages
English (en)
Other versions
DE69737705T2 (de
Inventor
Eric R Fossum
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
California Institute of Technology CalTech
Original Assignee
California Institute of Technology CalTech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Institute of Technology CalTech filed Critical California Institute of Technology CalTech
Publication of DE69737705D1 publication Critical patent/DE69737705D1/de
Application granted granted Critical
Publication of DE69737705T2 publication Critical patent/DE69737705T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14609Pixel-elements with integrated switching, control, storage or amplification elements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50Control of the SSIS exposure
    • H04N25/53Control of the integration time
    • H04N25/533Control of the integration time by using differing integration times for different sensor regions
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70SSIS architectures; Circuits associated therewith
    • H04N25/76Addressed sensors, e.g. MOS or CMOS sensors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/10Cameras or camera modules comprising electronic image sensors; Control thereof for generating image signals from different wavelengths

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69737705T 1996-01-22 1997-01-22 Aktive Bildelementsensormatrix Expired - Lifetime DE69737705T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US1030596P 1996-01-22 1996-01-22
US10305P 1996-01-22
US1370096P 1996-03-20 1996-03-20
US13700P 1996-03-20

Publications (2)

Publication Number Publication Date
DE69737705D1 true DE69737705D1 (de) 2007-06-14
DE69737705T2 DE69737705T2 (de) 2008-01-10

Family

ID=26681015

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69733248T Expired - Lifetime DE69733248T2 (de) 1996-01-22 1997-01-22 Aktive bildelementsensormatrix mit elektronischer überblendung
DE69729648T Expired - Lifetime DE69729648T2 (de) 1996-01-22 1997-01-22 Aktivpixelsensormatrix mit mehrfachauflösungsausgabe
DE69737705T Expired - Lifetime DE69737705T2 (de) 1996-01-22 1997-01-22 Aktive Bildelementsensormatrix

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69733248T Expired - Lifetime DE69733248T2 (de) 1996-01-22 1997-01-22 Aktive bildelementsensormatrix mit elektronischer überblendung
DE69729648T Expired - Lifetime DE69729648T2 (de) 1996-01-22 1997-01-22 Aktivpixelsensormatrix mit mehrfachauflösungsausgabe

Country Status (5)

Country Link
EP (2) EP0940029B1 (de)
JP (2) JP3887420B2 (de)
AU (2) AU1835397A (de)
DE (3) DE69733248T2 (de)
WO (2) WO1997028641A1 (de)

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EP4216103A1 (de) * 2005-03-11 2023-07-26 Hand Held Products, Inc. Strichcodelesegerät mit globaler elektronischer verschlusssteuerung
US7770799B2 (en) 2005-06-03 2010-08-10 Hand Held Products, Inc. Optical reader having reduced specular reflection read failures
JP2007175294A (ja) * 2005-12-28 2007-07-12 Ge Medical Systems Global Technology Co Llc イメージセンサ及びその制御方法並びにx線検出器及びx線ct装置
JP5311834B2 (ja) 2008-01-24 2013-10-09 キヤノン株式会社 撮像装置、撮像システム、信号処理方法及びプログラム
JP5585903B2 (ja) 2008-07-30 2014-09-10 国立大学法人静岡大学 距離画像センサ、及び撮像信号を飛行時間法により生成する方法
US10023745B2 (en) 2009-09-28 2018-07-17 San-Ei Gen F.F.I., Inc. Turmeric pigment composition and method for preparing same
DE102010030108B4 (de) 2010-06-15 2014-12-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Farbbildsensor
CN107911633B (zh) 2011-12-27 2021-05-14 株式会社尼康 固体成像元件及摄像装置
JP6579741B2 (ja) * 2014-10-09 2019-09-25 キヤノン株式会社 撮像装置及び放射線撮像システム
US10245028B2 (en) 2015-02-27 2019-04-02 Ethicon Llc Power adapter for a surgical instrument
US10091441B1 (en) 2015-09-28 2018-10-02 Apple Inc. Image capture at multiple resolutions
DE102016113010A1 (de) 2015-12-15 2017-06-22 Basler Ag Bestimmung von Helligkeitswerten virtueller Pixel
DE102016112968B4 (de) * 2016-07-14 2018-06-14 Basler Ag Bestimmung von Farbwerten für Pixel an Zwischenpositionen
JP7083608B2 (ja) * 2016-09-29 2022-06-13 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
JP6859553B2 (ja) * 2017-01-12 2021-04-14 ブリルニクス インク 固体撮像装置、固体撮像装置の駆動方法、および電子機器
CN111247801B (zh) * 2017-09-28 2022-06-14 苹果公司 用于事件相机数据处理的系统和方法
CN111712921A (zh) * 2017-12-12 2020-09-25 拉芳德利责任有限公司 用于可见光和紫外光检测的半导体光学传感器及其对应的制造过程
CN115356545B (zh) * 2022-08-10 2023-04-11 中国科学院近代物理研究所 一种用于带电粒子探测的新型像素单元结构及其使用方法

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Also Published As

Publication number Publication date
JP2000504516A (ja) 2000-04-11
JP2000504489A (ja) 2000-04-11
WO1997028558A3 (en) 1997-10-02
WO1997028558A2 (en) 1997-08-07
DE69729648T2 (de) 2005-06-09
DE69733248D1 (de) 2005-06-16
EP0940029A1 (de) 1999-09-08
EP0940029B1 (de) 2004-06-23
JP3887420B2 (ja) 2007-02-28
WO1997028641A1 (en) 1997-08-07
AU1833597A (en) 1997-08-22
EP0940029A4 (de) 2001-01-17
DE69729648D1 (de) 2004-07-29
EP0878007B1 (de) 2005-05-11
AU1835397A (en) 1997-08-22
EP0878007A4 (de) 2001-05-16
DE69737705T2 (de) 2008-01-10
DE69733248T2 (de) 2006-01-19
EP0878007A2 (de) 1998-11-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition