DE69733248D1 - Aktive bildelementsensormatrix mit elektronischer überblendung - Google Patents

Aktive bildelementsensormatrix mit elektronischer überblendung

Info

Publication number
DE69733248D1
DE69733248D1 DE69733248T DE69733248T DE69733248D1 DE 69733248 D1 DE69733248 D1 DE 69733248D1 DE 69733248 T DE69733248 T DE 69733248T DE 69733248 T DE69733248 T DE 69733248T DE 69733248 D1 DE69733248 D1 DE 69733248D1
Authority
DE
Germany
Prior art keywords
picture element
electronic transmission
sensor matrix
element sensor
active picture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69733248T
Other languages
English (en)
Other versions
DE69733248T2 (de
Inventor
R Fossum
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
California Institute of Technology CalTech
Original Assignee
California Institute of Technology CalTech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by California Institute of Technology CalTech filed Critical California Institute of Technology CalTech
Application granted granted Critical
Publication of DE69733248D1 publication Critical patent/DE69733248D1/de
Publication of DE69733248T2 publication Critical patent/DE69733248T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE69733248T 1996-01-22 1997-01-22 Aktive bildelementsensormatrix mit elektronischer überblendung Expired - Lifetime DE69733248T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US1030596P 1996-01-22 1996-01-22
US10305P 1996-01-22
US1370096P 1996-03-20 1996-03-20
US13700P 1996-03-20
PCT/US1997/000927 WO1997028558A2 (en) 1996-01-22 1997-01-22 Active pixel sensor array with electronic shuttering

Publications (2)

Publication Number Publication Date
DE69733248D1 true DE69733248D1 (de) 2005-06-16
DE69733248T2 DE69733248T2 (de) 2006-01-19

Family

ID=26681015

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69729648T Expired - Lifetime DE69729648T2 (de) 1996-01-22 1997-01-22 Aktivpixelsensormatrix mit mehrfachauflösungsausgabe
DE69737705T Expired - Lifetime DE69737705T2 (de) 1996-01-22 1997-01-22 Aktive Bildelementsensormatrix
DE69733248T Expired - Lifetime DE69733248T2 (de) 1996-01-22 1997-01-22 Aktive bildelementsensormatrix mit elektronischer überblendung

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69729648T Expired - Lifetime DE69729648T2 (de) 1996-01-22 1997-01-22 Aktivpixelsensormatrix mit mehrfachauflösungsausgabe
DE69737705T Expired - Lifetime DE69737705T2 (de) 1996-01-22 1997-01-22 Aktive Bildelementsensormatrix

Country Status (5)

Country Link
EP (2) EP0940029B1 (de)
JP (2) JP2000504489A (de)
AU (2) AU1833597A (de)
DE (3) DE69729648T2 (de)
WO (2) WO1997028641A1 (de)

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JP5311834B2 (ja) 2008-01-24 2013-10-09 キヤノン株式会社 撮像装置、撮像システム、信号処理方法及びプログラム
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KR20190006088A (ko) 2009-09-28 2019-01-16 산에이겐 에후.에후. 아이. 가부시키가이샤 심황 색소 조성물 및 그 조제 방법
DE102010030108B4 (de) 2010-06-15 2014-12-04 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Farbbildsensor
JP6011546B2 (ja) 2011-12-27 2016-10-19 株式会社ニコン 撮像素子および撮像装置
JP6579741B2 (ja) * 2014-10-09 2019-09-25 キヤノン株式会社 撮像装置及び放射線撮像システム
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DE102016112968B4 (de) * 2016-07-14 2018-06-14 Basler Ag Bestimmung von Farbwerten für Pixel an Zwischenpositionen
JP7083608B2 (ja) * 2016-09-29 2022-06-13 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
JP6859553B2 (ja) * 2017-01-12 2021-04-14 ブリルニクス インク 固体撮像装置、固体撮像装置の駆動方法、および電子機器
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Also Published As

Publication number Publication date
JP2000504489A (ja) 2000-04-11
AU1835397A (en) 1997-08-22
DE69733248T2 (de) 2006-01-19
WO1997028558A2 (en) 1997-08-07
EP0940029B1 (de) 2004-06-23
WO1997028641A1 (en) 1997-08-07
DE69729648T2 (de) 2005-06-09
DE69737705T2 (de) 2008-01-10
EP0878007A4 (de) 2001-05-16
EP0940029A4 (de) 2001-01-17
EP0940029A1 (de) 1999-09-08
DE69729648D1 (de) 2004-07-29
AU1833597A (en) 1997-08-22
EP0878007B1 (de) 2005-05-11
JP2000504516A (ja) 2000-04-11
JP3887420B2 (ja) 2007-02-28
WO1997028558A3 (en) 1997-10-02
DE69737705D1 (de) 2007-06-14
EP0878007A2 (de) 1998-11-18

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Legal Events

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