DE69911309D1 - Siliciumnitridsinterkörper hoher Wärmeleitfähigkeit und Verfahren zum Herstellen desselben - Google Patents

Siliciumnitridsinterkörper hoher Wärmeleitfähigkeit und Verfahren zum Herstellen desselben

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Publication number
DE69911309D1
DE69911309D1 DE69911309T DE69911309T DE69911309D1 DE 69911309 D1 DE69911309 D1 DE 69911309D1 DE 69911309 T DE69911309 T DE 69911309T DE 69911309 T DE69911309 T DE 69911309T DE 69911309 D1 DE69911309 D1 DE 69911309D1
Authority
DE
Germany
Prior art keywords
manufacturing
silicon nitride
same
thermal conductivity
sintered body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69911309T
Other languages
English (en)
Other versions
DE69911309T2 (de
Inventor
Michiyasu Komatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69911309D1 publication Critical patent/DE69911309D1/de
Application granted granted Critical
Publication of DE69911309T2 publication Critical patent/DE69911309T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C04B35/593—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering
    • C04B35/5935—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering obtained by gas pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C04B35/587—Fine ceramics

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
DE69911309T 1998-05-12 1999-05-12 Siliciumnitridsinterkörper hoher Wärmeleitfähigkeit und Verfahren zum Herstellen desselben Expired - Lifetime DE69911309T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP12915498 1998-05-12
JP12915498 1998-05-12
JP11689999 1999-04-23
JP11689999A JP4346151B2 (ja) 1998-05-12 1999-04-23 高熱伝導性窒化けい素焼結体およびそれを用いた回路基板並びに集積回路

Publications (2)

Publication Number Publication Date
DE69911309D1 true DE69911309D1 (de) 2003-10-23
DE69911309T2 DE69911309T2 (de) 2004-07-08

Family

ID=26455130

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69911309T Expired - Lifetime DE69911309T2 (de) 1998-05-12 1999-05-12 Siliciumnitridsinterkörper hoher Wärmeleitfähigkeit und Verfahren zum Herstellen desselben

Country Status (5)

Country Link
US (1) US6242374B1 (de)
EP (1) EP0963966B1 (de)
JP (1) JP4346151B2 (de)
KR (1) KR100341696B1 (de)
DE (1) DE69911309T2 (de)

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US6391812B1 (en) * 1999-06-23 2002-05-21 Ngk Insulators, Ltd. Silicon nitride sintered body and method of producing the same
JP2001080967A (ja) * 1999-09-06 2001-03-27 Sumitomo Electric Ind Ltd Ｓｉ３Ｎ４セラミックスとその製造用Ｓｉ基組成物及びこれらの製造方法
JP3889536B2 (ja) * 1999-10-29 2007-03-07 日本特殊陶業株式会社 セラミックヒータ及びその製造方法、並びに該セラミックヒータを備えるグロープラグ
US6799628B1 (en) * 2000-07-20 2004-10-05 Honeywell International Inc. Heat exchanger having silicon nitride substrate for mounting high power electronic components
US6642165B2 (en) * 2000-08-21 2003-11-04 Kabushiki Kaisha Toshiba Wear resistant member for electronic equipment, and bearing and spindle motor therewith
DE10146227B4 (de) * 2000-09-20 2015-01-29 Hitachi Metals, Ltd. Siliciumnitrid-Sinterkörper, Leiterplatte und thermoelektrisches Modul
JP5038565B2 (ja) * 2000-09-22 2012-10-03 株式会社東芝 セラミックス回路基板およびその製造方法
US6613443B2 (en) 2000-10-27 2003-09-02 Kabushiki Kaisha Toshiba Silicon nitride ceramic substrate, silicon nitride ceramic circuit board using the substrate, and method of manufacturing the substrate
JP4795588B2 (ja) * 2001-01-12 2011-10-19 株式会社東芝 窒化けい素製耐摩耗性部材
JP4454191B2 (ja) * 2001-07-30 2010-04-21 日本特殊陶業株式会社 セラミックヒータの製造方法
JP4820506B2 (ja) * 2001-08-27 2011-11-24 株式会社東芝 電子機器用耐摩耗性部材とそれを用いた電子機器用ベアリング
US20040009866A1 (en) * 2002-06-13 2004-01-15 Ngk Spark Plug Co. Ltd. Sintered silicon nitride, cutting tip, wear-resistant member, cutting tool, and method for producing sintered silicon nitride
US7638200B2 (en) * 2002-09-13 2009-12-29 Tosoh Smd, Inc. Process for making dense mixed metal Si3N4 targets
JP5002155B2 (ja) * 2003-09-25 2012-08-15 株式会社東芝 窒化けい素製耐摩耗性部材およびその製造方法
EP1666434B1 (de) * 2004-05-20 2012-04-11 Kabushiki Kaisha Toshiba Sehr wärmeleitfähiger siliciumnitrid-sinterkörper und siliciumnitrid-bauelement
US20090090452A1 (en) * 2005-06-29 2009-04-09 Kabushiki Kaisha Toshiba Process for producing nonflat ceramic substrate
EP1914213B1 (de) 2005-08-11 2016-04-13 Denka Company Limited Siliciumnitrid- gedruckte schaltung
WO2008032427A1 (fr) 2006-09-13 2008-03-20 Kabushiki Kaisha Toshiba Élément coulissant et palier utilisant celui-ci
KR101582704B1 (ko) 2008-07-03 2016-01-05 히타치 긴조쿠 가부시키가이샤 질화 규소 기판 및 그 제조 방법과 그것을 사용한 질화 규소 회로 기판 및 반도체 모듈
US8771585B2 (en) * 2008-08-29 2014-07-08 Ab Skf Method for manufacturing ceramic components
JP5839992B2 (ja) * 2009-07-06 2016-01-06 株式会社東芝 Ｌｅｄランプ及びヘッドライト
US8652981B2 (en) * 2010-01-21 2014-02-18 Ceradyne, Inc. Dense silicon nitride body having high strength, high Weibull modulus and high fracture toughness
JP5732037B2 (ja) * 2010-02-16 2015-06-10 株式会社東芝 耐摩耗性部材およびその製造方法
EP2546216B1 (de) 2010-03-09 2016-08-03 Kyocera Corporation Gesinterter keramikpressling, leiterplatte damit, elektronische vorrichtung und thermoelektrisches umwandlungsmodul
JP5743830B2 (ja) * 2010-09-29 2015-07-01 京セラ株式会社 窒化珪素質焼結体およびこれを用いた回路基板ならびに電子装置
CN104011852B (zh) 2011-12-20 2016-12-21 株式会社东芝 陶瓷铜电路基板和使用了陶瓷铜电路基板的半导体装置
CN108727035A (zh) 2017-04-24 2018-11-02 京瓷株式会社 陶瓷板以及电子装置
CN109305816B (zh) * 2017-07-27 2022-04-05 浙江多面体新材料有限公司 一种常压烧结制备高热导率氮化硅陶瓷的方法
JP2019052071A (ja) * 2017-09-19 2019-04-04 株式会社東芝 絶縁性熱伝導体
KR101901172B1 (ko) * 2018-05-23 2018-09-27 (주)존인피니티 전기절연성이 우수한 고열전도성 질화규소 세라믹스 기판
DE102019114328B4 (de) * 2018-05-31 2022-03-03 Rohm Co. Ltd Halbleitersubstratstruktur und leistungshalbleitervorrichtung
KR102641152B1 (ko) 2021-12-28 2024-02-27 (주) 존인피니티 질화규소 분말 및 질화규소 소결체의 제조방법
CN115073186B (zh) * 2022-07-22 2023-05-23 中国科学院兰州化学物理研究所 一种氮化硅陶瓷烧结体及其制备方法

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JPS6168373A (ja) * 1984-09-07 1986-04-08 日本碍子株式会社 窒化珪素焼結体およびその製造法
JPS61158868A (ja) * 1984-12-29 1986-07-18 株式会社東芝 セラミツクス焼結体の製造方法
US4820665A (en) * 1986-12-16 1989-04-11 Ngk Insulators, Ltd. Ceramic sintered bodies and a process for manufacturing the same
JPH0774103B2 (ja) * 1986-12-27 1995-08-09 日本碍子株式会社 高硬度窒化珪素焼結体
JP2524201B2 (ja) * 1988-08-22 1996-08-14 日本特殊陶業株式会社 窒化珪素質焼結体及びその製造方法
JPH0694390B2 (ja) * 1988-09-09 1994-11-24 日本特殊陶業株式会社 窒化珪素焼結体
US5238884A (en) * 1990-01-23 1993-08-24 Ngk Insulators, Ltd. Silicon nitride bodies and a process for producing the same
US5217931A (en) * 1990-01-30 1993-06-08 Mazda Motor Corporation Ceramic sliding member and method of manufacturing the same
DE4038003C2 (de) * 1990-11-29 1997-01-02 Bayer Ag Verfahren zur Herstellung von Sinterwerkstoffen auf Si¶3¶N¶4¶-Basis
JP2871410B2 (ja) * 1992-09-08 1999-03-17 株式会社東芝 高熱伝導性窒化けい素焼結体およびその製造方法
EP0587119B1 (de) * 1992-09-08 1998-01-07 Kabushiki Kaisha Toshiba Siliciumnitrid-Sinterkörper mit hoher Wärmeleitfähigkeit und Verfahren zu seiner Herstellung
KR0143870B1 (ko) * 1993-12-27 1998-07-01 사토 후미오 고열전도성 질화규소 구조부재 및 반도체 패키지, 히터, 서멀헤드
JP3445342B2 (ja) 1993-12-27 2003-09-08 株式会社東芝 高熱伝導性窒化けい素構造部材および半導体パッケージ
JP3335789B2 (ja) * 1995-02-09 2002-10-21 日本碍子株式会社 熱間圧延用セラミック治具及びその製造方法
JP3450570B2 (ja) 1995-03-20 2003-09-29 株式会社東芝 高熱伝導性窒化けい素回路基板
JP2698780B2 (ja) * 1995-03-20 1998-01-19 株式会社東芝 窒化けい素回路基板
JP3100892B2 (ja) * 1995-12-28 2000-10-23 株式会社東芝 高熱伝導性窒化けい素焼結体およびその製造方法
JPH0987037A (ja) * 1995-07-18 1997-03-31 Ngk Spark Plug Co Ltd 窒化ケイ素質焼結体とその製造方法
JP3501317B2 (ja) * 1995-07-21 2004-03-02 日産自動車株式会社 高熱伝導率窒化ケイ素質焼結体および窒化ケイ素質焼結体製絶縁基板
JP3618422B2 (ja) 1995-09-29 2005-02-09 株式会社東芝 高強度回路基板およびその製造方法
JP3629783B2 (ja) * 1995-12-07 2005-03-16 電気化学工業株式会社 回路基板
JP3537241B2 (ja) 1995-12-07 2004-06-14 電気化学工業株式会社 窒化珪素焼結体の製造方法
JP3042402B2 (ja) * 1996-04-26 2000-05-15 住友電気工業株式会社 窒化珪素系セラミックス摺動材料及びその製造方法
JPH11310164A (ja) * 1998-04-28 1999-11-09 Araco Corp 車両用ルームラック構造

Also Published As

Publication number Publication date
EP0963966A1 (de) 1999-12-15
JP4346151B2 (ja) 2009-10-21
US6242374B1 (en) 2001-06-05
KR19990088209A (ko) 1999-12-27
KR100341696B1 (ko) 2002-06-24
EP0963966B1 (de) 2003-09-17
JP2000034172A (ja) 2000-02-02
DE69911309T2 (de) 2004-07-08

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Legal Events

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8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN

8364 No opposition during term of opposition