DE69316118D1 - Siliciumnitrid-Sinterkörper mit hoher Wärmeleitfähigkeit und Verfahren zu seiner Herstellung - Google Patents

Siliciumnitrid-Sinterkörper mit hoher Wärmeleitfähigkeit und Verfahren zu seiner Herstellung

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Publication number
DE69316118D1
DE69316118D1 DE69316118T DE69316118T DE69316118D1 DE 69316118 D1 DE69316118 D1 DE 69316118D1 DE 69316118 T DE69316118 T DE 69316118T DE 69316118 T DE69316118 T DE 69316118T DE 69316118 D1 DE69316118 D1 DE 69316118D1
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Germany
Prior art keywords
production
silicon nitride
thermal conductivity
sintered body
high thermal
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Expired - Lifetime
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DE69316118T
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English (en)
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DE69316118T2 (de
Inventor
Michiyasu Komatsu
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Toshiba Corp
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Toshiba Corp
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Publication of DE69316118D1 publication Critical patent/DE69316118D1/de
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Publication of DE69316118T2 publication Critical patent/DE69316118T2/de
Anticipated expiration legal-status Critical
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DE69316118T 1992-09-08 1993-09-07 Siliciumnitrid-Sinterkörper mit hoher Wärmeleitfähigkeit und Verfahren zu seiner Herstellung Expired - Lifetime DE69316118T2 (de)

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JP2725761B2 (ja) * 1993-12-27 1998-03-11 本田技研工業株式会社 窒化珪素セラミックス材料及びその製造方法
KR0143870B1 (ko) * 1993-12-27 1998-07-01 사토 후미오 고열전도성 질화규소 구조부재 및 반도체 패키지, 히터, 서멀헤드
US5928768A (en) * 1995-03-20 1999-07-27 Kabushiki Kaisha Toshiba Silicon nitride circuit board
EP0766307B1 (de) * 1995-03-20 2007-08-08 Kabushiki Kaisha Toshiba Schaltungssubstrat aus siliziumnitrid
CN1082938C (zh) * 1995-06-23 2002-04-17 株式会社东芝 高导热性氮化硅烧结体和使用它的压接结构体
DE69708353T2 (de) * 1996-02-28 2002-05-16 Honda Motor Co Ltd Sinterkörper aus Siliziumnitrid
SE513938C2 (sv) * 1996-07-19 2000-11-27 Sandvik Ab Skärverktygsmaterial av kiselnitrid
EP0874399A1 (de) 1996-08-20 1998-10-28 Kabushiki Kaisha Toshiba Siliziumnitrid-leiterplatte und halbleiter-modul
JPH1067586A (ja) * 1996-08-27 1998-03-10 Dowa Mining Co Ltd パワーモジュール用回路基板およびその製造方法
DE19746008A1 (de) * 1997-10-20 1999-04-22 Bayer Ag Sinteradditive und Si02-enthaltende Siliciumnitridwerkstoffe, ein Verfahren zu deren Herstellung und deren Verwendung
US6294244B1 (en) * 1997-12-22 2001-09-25 Kyocera Corporation Wiring board having excellent heat-radiating property
US6617272B2 (en) 1998-03-05 2003-09-09 Sumitomo Electric Industries, Ltd. Si3N4 sintered body with high thermal conductivity and method for producing the same
JPH11322438A (ja) * 1998-03-12 1999-11-24 Sumitomo Electric Ind Ltd 高熱伝導性窒化ケイ素質焼結体及びその製造方法
US5908796A (en) * 1998-05-01 1999-06-01 Saint-Gobain Industrial Ceramics, Inc. Dense silicon nitride ceramic having fine grained titanium carbide
JP4346151B2 (ja) * 1998-05-12 2009-10-21 株式会社東芝 高熱伝導性窒化けい素焼結体およびそれを用いた回路基板並びに集積回路
JP2000128654A (ja) * 1998-10-28 2000-05-09 Sumitomo Electric Ind Ltd 窒化ケイ素複合基板
US6316116B1 (en) * 1999-04-30 2001-11-13 Kabushiki Kaisha Toshiba Ceramic circuit board and method of manufacturing the same
KR100321939B1 (ko) * 1999-07-03 2002-02-04 최동환 질화규소를 소결조제로 첨가한 붕화티타늄 소결체 및 그 제조방법
JP4744704B2 (ja) * 2000-03-16 2011-08-10 株式会社東芝 耐摩耗性部材の製造方法
US6642165B2 (en) * 2000-08-21 2003-11-04 Kabushiki Kaisha Toshiba Wear resistant member for electronic equipment, and bearing and spindle motor therewith
JP4795588B2 (ja) * 2001-01-12 2011-10-19 株式会社東芝 窒化けい素製耐摩耗性部材
US7521388B2 (en) * 2003-09-25 2009-04-21 Kabushiki Kaisha Toshiba Wear resistant member comprised of silicon nitride and process for producing the same
JP4869070B2 (ja) * 2004-05-20 2012-02-01 株式会社東芝 高熱伝導性窒化ケイ素焼結体及び窒化ケイ素構造部材
US20060014624A1 (en) * 2004-07-15 2006-01-19 Biljana Mikijelj High dielectric strength monolithic Si3N4
US8579513B2 (en) * 2006-09-13 2013-11-12 Kabushiki Kaisha Toshiba Slide member and bearing utilizing the same
DE102012207803A1 (de) 2012-05-10 2013-11-28 Schaeffler Technologies AG & Co. KG Siliziumnitridkeramik und Verfahren zu deren Herstellung
DE102012207802A1 (de) 2012-05-10 2013-11-28 Schaeffler Technologies AG & Co. KG Siliziumnitridkeramik sowie Verfahren zu deren Herstellung
KR101511376B1 (ko) * 2013-10-11 2015-04-13 국립대학법인 울산과학기술대학교 산학협력단 산화하프늄-탄소 계열 나노 입자 소결체의 제조 방법
CN113735594B (zh) * 2021-08-25 2022-11-18 北京科技大学 一种热压烧结制备高导热氮化硅陶瓷的方法
CN115849917A (zh) * 2022-11-25 2023-03-28 宁波银瓷新材料有限公司 一种高热导率氮化硅基板材料及其加工工艺

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JP2876776B2 (ja) * 1990-11-07 1999-03-31 住友電気工業株式会社 窒化ケイ素焼結体

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EP0587119A2 (de) 1994-03-16
US5439856A (en) 1995-08-08
DE69316118T2 (de) 1998-04-23
KR940007204A (ko) 1994-04-26
EP0587119B1 (de) 1998-01-07
KR960006250B1 (ko) 1996-05-11
EP0587119A3 (de) 1994-11-30

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