DE69525939T2 - Gesintertes siliciumnitrid und verfahren zu seiner herstellung - Google Patents

Gesintertes siliciumnitrid und verfahren zu seiner herstellung

Info

Publication number
DE69525939T2
DE69525939T2 DE69525939T DE69525939T DE69525939T2 DE 69525939 T2 DE69525939 T2 DE 69525939T2 DE 69525939 T DE69525939 T DE 69525939T DE 69525939 T DE69525939 T DE 69525939T DE 69525939 T2 DE69525939 T2 DE 69525939T2
Authority
DE
Germany
Prior art keywords
manufacture
silicon nitride
sintered silicon
sintered
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69525939T
Other languages
English (en)
Other versions
DE69525939D1 (de
Inventor
Seiji Nakahata
Hisao Takeuchi
Akira Yamakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69525939D1 publication Critical patent/DE69525939D1/de
Application granted granted Critical
Publication of DE69525939T2 publication Critical patent/DE69525939T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C04B35/591Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by reaction sintering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Products (AREA)
DE69525939T 1994-12-28 1995-12-26 Gesintertes siliciumnitrid und verfahren zu seiner herstellung Expired - Fee Related DE69525939T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP32755394 1994-12-28
PCT/JP1995/002679 WO1996020144A1 (fr) 1994-12-28 1995-12-26 Nitrure de silicium fritte et son procede de production

Publications (2)

Publication Number Publication Date
DE69525939D1 DE69525939D1 (de) 2002-04-25
DE69525939T2 true DE69525939T2 (de) 2002-09-26

Family

ID=18200357

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69525939T Expired - Fee Related DE69525939T2 (de) 1994-12-28 1995-12-26 Gesintertes siliciumnitrid und verfahren zu seiner herstellung

Country Status (6)

Country Link
US (1) US5756411A (de)
EP (1) EP0749945B1 (de)
KR (1) KR100193605B1 (de)
CN (1) CN1059652C (de)
DE (1) DE69525939T2 (de)
WO (1) WO1996020144A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5928601A (en) * 1994-02-28 1999-07-27 Honda Giken Kogyo Kabushiki Kaisha Method for producing silicon nitride reaction sintered body
US5995127A (en) * 1994-09-13 1999-11-30 Kabushiki Kaisha Toshiba Thermal print head and manufacturing method thereof
JP2686248B2 (ja) * 1995-11-16 1997-12-08 住友電気工業株式会社 Si3N4セラミックスとその製造用Si基組成物及びこれらの製造方法
JPH1179848A (ja) * 1997-08-29 1999-03-23 Kyocera Corp 窒化珪素質焼結体
EP0963965A4 (de) * 1997-09-03 2001-03-21 Sumitomo Electric Industries Gesintertes siliziumnitrid mit hoher wärmeleitfähigkeit und verfahren zur herstellung
JP3149827B2 (ja) * 1997-09-09 2001-03-26 住友電気工業株式会社 窒化珪素系焼結体およびその製造方法
US6617272B2 (en) 1998-03-05 2003-09-09 Sumitomo Electric Industries, Ltd. Si3N4 sintered body with high thermal conductivity and method for producing the same
WO2001047833A1 (fr) * 1999-12-24 2001-07-05 Asahi Glass Company, Limited Filtre au nitrure de silicium et procede de fabrication correspondant
CN100343198C (zh) * 2003-07-29 2007-10-17 旭硝子株式会社 氮化硅质蜂窝式过滤器及其制造方法
WO2009012455A1 (en) 2007-07-18 2009-01-22 Oxane Materials, Inc. Proppants with carbide and/or nitride phases
US10669210B2 (en) * 2016-03-28 2020-06-02 Hitachi Metals, Ltd. Silicon nitride sintered substrate, silicon nitride sintered substrate sheet, circuit substrate, and production method for silicon nitride sintered substrate
WO2020203697A1 (ja) * 2019-03-29 2020-10-08 デンカ株式会社 窒化ケイ素粉末及びその製造方法、並びに窒化ケイ素焼結体の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5888168A (ja) * 1981-11-20 1983-05-26 住友電気工業株式会社 非酸化物セラミツクスの製造方法
DE3514284A1 (de) * 1985-04-19 1986-10-23 Elektroschmelzwerk Kempten GmbH, 8000 München Verfahren zur herstellung von formkoerpern aus reaktionsgebundenem siliciumnitrid durch nitridierung unter hohem stickstoffgasdruck
US4716133A (en) * 1986-03-31 1987-12-29 Kyocera Corporation Method for production of silicon nitride sintered body
US5187129A (en) * 1987-12-21 1993-02-16 Eaton Corporation Process for making silicon nitride and powders and articles made therefrom
US5126294A (en) * 1988-08-09 1992-06-30 Nissan Motor Co., Ltd. Sintered silicon nitride and production method thereof
US5114888A (en) * 1989-11-21 1992-05-19 Ngk Spark Plug Co., Ltd. Silicon nitride sintered body and method for producing same
US5160719A (en) * 1990-07-24 1992-11-03 Eaton Corporation Process for nitriding silicon containing materials
JP2784280B2 (ja) * 1991-06-27 1998-08-06 京セラ株式会社 セラミック複合焼結体及びその製法、並びに摺動部材
TW209854B (de) * 1991-08-28 1993-07-21 Hoechst Ceram Tec Ag

Also Published As

Publication number Publication date
KR100193605B1 (ko) 1999-06-15
KR970701159A (ko) 1997-03-17
EP0749945A4 (de) 1998-10-21
WO1996020144A1 (fr) 1996-07-04
CN1059652C (zh) 2000-12-20
EP0749945A1 (de) 1996-12-27
DE69525939D1 (de) 2002-04-25
CN1142218A (zh) 1997-02-05
US5756411A (en) 1998-05-26
EP0749945B1 (de) 2002-03-20

Similar Documents

Publication Publication Date Title
DE69736155D1 (de) Nitrid-Einkristall und Verfahren zu seiner Herstellung
DE69627078D1 (de) Poröser Siliziumnitridkörper und Verfahren zu seiner Herstellung
DE69536084D1 (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
DE69307444D1 (de) Siliciumnitrid-Sinterkörper und Verfahren zu seiner Herstellung
DE69617849T2 (de) Halbleiter-Kondensator und Verfahren zu seiner Herstellung
DE60101069D1 (de) Siliziumkarbid und Verfahren zu seiner Herstellung
DE69937315D1 (de) Sicher zu öffnendes Dosenende und Verfahren zu seiner Herstellung
DE3766016D1 (de) Gesintertes siliziumnitrid und verfahren zu seiner herstellung.
DE69518595T2 (de) Bornitrid enthaltendes Material und Verfahren zu seiner Herstellung
DE69719284D1 (de) Gegossener Artikel und Verfahren zu seiner Herstellung
DE60105218D1 (de) Siliciumkarbid und Verfahren zu seiner Herstellung
DE69510300D1 (de) Epitaktisches Plättchen und Verfahren zu seiner Herstellung
DE69810786T2 (de) Keramischer heissgasfilter und verfahren zu seiner herstellung
DE60019691D1 (de) Siliziumkarbid und Verfahren zu seiner Herstellung
DE69507929D1 (de) Poröser Keramikkörper und Verfahren zu seiner Herstellung
DE69525939D1 (de) Gesintertes siliciumnitrid und verfahren zu seiner herstellung
DE59600453D1 (de) Zinnbadbodenstein, und Verfahren zu seiner Herstellung
DE69201910D1 (de) Siliciumnitrid-Sinterkörper und Verfahren zu seiner Herstellung.
DE69516805T2 (de) Poröser keramischer Film und Verfahren zu seiner Herstellung
DE69301982D1 (de) Aluminiumnitrid-sinterkörper und Verfahren zu seiner Herstellung
DE69523655D1 (de) Beschleunigungsmessaufnehmer und Verfahren zu seiner Herstellung
DE69010943D1 (de) Gesintertes Siliciumnitrid und Verfahren zu seiner Herstellung.
DE69732460D1 (de) Thermokopf und verfahren zu seiner herstellung
DE69010427D1 (de) Sinterkörper aus Siliziumnitrid und Verfahren zu seiner Herstellung.
DE69928713D1 (de) Silancopolymer und Verfahren zu seiner Herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee